Wisotzki
Elmar Wisotzki, Darmstadt DE
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20130217185 | POWER DEVICE MANUFACTURE ON THE RECESSED SIDE OF A THINNED WAFER - A recess is formed into a first side of a wafer such that a thinned center portion of the wafer is formed, and such that the central portion is surrounded by a thicker peripheral edge support portion. The second side of the wafer remains substantially entirely planar. After formation of the thinned wafer, vertical power devices are formed into the first side of the central portion of the wafer. Formation of the devices involves forming a plurality of diffusion regions into the first side of the thinned central portion. Metal electrodes are formed on the first and second sides, the peripheral portion is cut from the wafer, and the thin central portion is diced to form separate power devices. In one example, a first commercial entity manufactures the thinned wafers, and a second commercial entity obtains the thinned wafers and performs subsequent processing to form the vertical power devices. | 08-22-2013 |
Fritz Juergen Wisotzki, Darmstadt DE
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20110200841 | SYSTEM FOR THE PRODUCTION OF GRAIN FREE METAL PRODUCTS - A new process and technical arrangement has been established for the production of grain free metal products, which can be extruded directly from the melt, by inserting a seed crystal from a seeding chamber into the opening of the extrusion jet of the melting vessel. The seed crystal will break by contact the surface tension of the liquid metal in the extrusion jet channel, which is slightly undercooled. Upon establishing contact, the temperature at the meeting point of the seed crystal and the liquid metal will be raised by RF-heating to permit the extrusion of the seed crystal backwards, ensuring that metal and seed crystal maintain contact and crystal growth will continue. It has been discovered, that single crystals with the orientation of the seed crystal will continue to grow and to establish high hardness. Speed of extrusion is exceeded to reach only grain free structure in the grown metal. | 08-18-2011 |
Fritz Jürgen Wisotzki, Darmstadt DE
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20110226324 | System for the Production of Single Crystal Semiconductors and Solar Panels Using the Single Crystal Semiconductors - A process and the required technical arrangement has been developed to produce single crystal solar panels or otherwise used semiconductors, which starts with the raw material to produce single crystal copper ribbons, extruded directly from the melt, with unharmed and optical surfaces onto which in the next unit a silicon or germanium film will be deposited. In the next unit the copper ribbon will be removed from the silicon film, whilst a hard plastic support or ceramic support is mounted, leaving copper contours on the silicon film to be used as electrical conductors or contacts. In the next unit a thin film is deposited of II-VI-compounds that enhance the infrared sensitivity of the base film of silicon or germanium up to 56% of the incoming light. This technology guarantees the lowest possible cost in production of the highest possible efficiency of materials for infrared applications and also for electronic applications. | 09-22-2011 |
Juergen Wisotzki, Dramstadt DE
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20110142184 | Process and technical arrangement to study nuclear fission by using single atomic layers of nuclear materials with a single crystal structure grown onto undamaged, miniature single crystal hollow body surfaces, which serve as a seeding platform - A new process and arrangement (as shown in | 06-16-2011 |
Juergen Wisotzki, Darmstadt DE
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20110189325 | Process and technical arrangement to produce in series single crystal penetrator rods of an alloy of 40wt% tungsten-40wt% titanium-20wt% osmium to replace depleted uranium which causes after use hazardous environmental problems - A new process and technical arrangement to produce in series penetrator rods which have a true single crystal structure consisting of an alloy of 40% by weight Tungsten, 40% by weight Titanium, 20% by weight Osmium. Those single crystal penetrator rods do not break up upon impact on a target, the material sleeves back over the surface whilst the core drives forward and penetrates till the given velocity is used up. This phenomena is only achievable with a single crystal structure and leads to a size and weight reduction because there is not any material lost upon impact on the target as it happens with all penetrator rods which have a grain structure and as they are used today. This alloy as named above has the highest density and highest hardness possible, caused by the crystal growth process and it permits the user to stay out of reach of any opponent not using the same material. | 08-04-2011 |