Patent application number | Description | Published |
20080246015 | METHOD TO FORM HIGH EFFICIENCY GST CELL USING A DOUBLE HEATER CUT - Embodiments of the present invention provide a method that includes providing wafer including multiple cells, each cell including at least one emitter. The method further includes performing a lithographic operation in a word line direction of the wafer across the cells to form pre-heater element arrangements, performing a lithographic operation in a bit line direction of the wafer across the pre-heater element arrangements to form a pre-heater element adjacent each emitter, and performing a lithographic operation in the word line direction across a portion of the pre-heater elements to form a heater element adjacent each emitter. Other embodiments are also described. | 10-09-2008 |
20090196117 | SYSTEM AND METHOD FOR MEMORY ARRAY DECODING - A memory system includes Q memory blocks that each include M memory sub-blocks. The memory system also includes Q word line decoders that each are associated with a different one of the Q memory blocks. The memory system also includes a bit line decoder and Q×M switch modules. Each Q×M switch module selectively controls access to up to J of the M memory sub-blocks of the Q memory blocks. The Q word line decoders and the bit line decoder access less than M memory sub-blocks in at least two of the Q memory blocks during one of a read and write operation. M and Q are integers greater than 1, and J is an integer greater than or equal to 1 | 08-06-2009 |
20090307437 | Multiport Memory Architecture, Devices and Systems Including the Same, and Methods of Using the Same - A multiport memory architecture, systems including the same and methods for using the same. The architecture generally includes (a) a memory array; (b) a plurality of ports configured to receive and/or transmit data; and (c) a plurality of port buffers, each of which is configured to transmit the data to and/or receive the data from one or more of the ports, and all of which are configured to (i) transmit the data to the memory array on a first common bus and (ii) receive the data from the memory array on a second common bus. The systems generally include those that embody one or more of the inventive concepts disclosed herein. The methods generally relate to writing blocks of data to, reading blocks of data from, and/or transferring blocks of data across a memory. The present invention advantageously reduces latency in data communications, particularly in network switches, by tightly coupling port buffers to the main memory and advantageously using point-to-point communications over long segments of the memory read and write paths, thereby reducing routing congestion and enabling the elimination of a FIFO. The invention advantageously shrinks chip size and provides increased data transmission rates and throughput, and in preferred embodiments, reduced resistance and/or capacitance in the memory read and write busses. | 12-10-2009 |
20100173452 | METHOD TO FORM HIGH EFFICIENCY GST CELL USING A DOUBLE HEATER CUT - Embodiments of the present invention provide a method that includes providing wafer including multiple cells, each cell including at least one emitter. The method further includes performing a lithographic operation in a word line direction of the wafer across the cells to form pre-heater element arrangements, performing a lithographic operation in a bit line direction of the wafer across the pre-heater element arrangements to form a pre-heater element adjacent each emitter, and performing a lithographic operation in the word line direction across a portion of the pre-heater elements to form a heater element adjacent each emitter. Other embodiments are also described. | 07-08-2010 |
20110058439 | Circuits, Architectures, Apparatuses, Systems, Algorithms, and Methods for Memory with Multiple Power Supplies and/or Multiple Low Power Modes - Circuits, architectures, a system and methods for memories with multiple power supplies and/or multiple low power modes. The circuit generally includes peripheral circuitry operating at a first voltage, a memory array operating at a second voltage, and translation circuitry configured to receive an input from the peripheral circuitry at the first voltage and provide an output to the memory array at the second voltage, the translation circuitry further configured to prevent leakage during a standard operating mode of the memory. The method generally includes operating peripheral circuitry at a first voltage from a first power rail, operating a memory array at the first voltage or a second voltage, the memory array being coupled to a second power rail, coupling the first and second power rails during standard operating mode when the memory array operates at the first voltage, otherwise not coupling the first and second power rails, and reducing leakage in the memory array during a leakage reduction mode by reducing a voltage differential between a ground plane in the memory array and the second power rail. | 03-10-2011 |
20110140773 | Circuits and Methods for Calibrating Offset in an Amplifier - In one embodiment, the present disclosure includes a circuit comprising an amplifier having an input and an output, an offset detection circuit to detect an offset of the amplifier at the output of the amplifier, and an offset generation circuit having an input coupled to the offset detection circuit and an output coupled to the input of the amplifier to generate an offset at the input of the amplifier during an operational phase of the amplifier based on the detected offset. The generated offset cancels a least a portion of the offset of the amplifier. In one implementation, the amplifier is a sense amplifier in a memory. | 06-16-2011 |
20110305095 | System and Method for Memory Array Decoding - A memory system including a memory array, and a read write/module. The memory includes a plurality of bit lines, a plurality of word lines, and a plurality of memory cells, in which each memory cell is formed at a corresponding intersection of a bit line and a word line in the memory array. The read/write module is configured to control activation of at least two memory cells in the memory array during a read operation or a write operation, wherein the at least two memory cells activated by the read/write module are located on a different word line and a different bit line in the memory array, and wherein each memory cell coupled to a same bit line of the plurality of bit lines is configured to be written to or read from based on selection of the bit line. | 12-15-2011 |
20120013379 | Charge-Injection Sense-Amp Logic - A flip-flop circuit includes a charge injection module, a sense amp module, and a latch module. The charge injection module is configured to, in response to a clock signal, selectively provide electrical charge from a power supply to a first node. The sense amp module is configured to adjust a voltage of a second node in response to detecting a voltage of the first node crossing a threshold while the charge injection module is providing the electrical charge to the first node. The latch module is configured to in response to the clock signal, store a value based on a voltage of the second node. The latch module is also configured to provide the value as an output of the flip-flop circuit. | 01-19-2012 |
20120068754 | METHOD AND APPARATUS FOR TIMING CLOSURE - Aspects of the disclosure provide a circuit, such as an integrated circuit. The circuit includes a first circuit and a second circuit. The second circuit includes a delay circuit configured to cause the second circuit to have substantially matched delay characteristics of the first circuit in response to at least one parameter change of manufacturing, environmental and operational parameters, such as process variation, temperature variation, and supply voltage variation. | 03-22-2012 |
20120262994 | SYSTEM AND METHOD FOR MEMORY ARRAY DECODING - A memory system including a memory array, and a read write/module. The memory includes a plurality of bit lines, a plurality of word lines, and a plurality of memory cells, in which each memory cell is formed at a corresponding intersection of a bit line and a word line in the memory array. The read/write module is configured to control activation of at least two memory cells in the memory array during a read operation or a write operation, wherein the at least two memory cells activated by the read/write module are located on a different word line and a different bit line in the memory array, and wherein each memory cell coupled to a same bit line of the plurality of bit lines is configured to be written to or read from based on selection of the bit line. | 10-18-2012 |
20130182491 | SYSTEM AND METHOD FOR MODIFYING ACTIVATION OF A SENSE AMPLIFIER - Systems, methods, and other embodiments associated with controlling a sense amplifier in a memory device are described. According to one embodiment, an apparatus includes a signal generator configured to generate a sense enable signal that activates a sense amplifier of a memory cell in a memory device. The apparatus includes a dummy memory cell connected to a current mirror circuit that is configured to detect a timing variation in the dummy memory cell from a predefined timing and to alter a timing of the sense enable signal based, at least in part, on the timing variation. The apparatus also includes a controller configured to modify the timing of the sense enable signal by selectively enabling one or more of a plurality of semiconductor gates in the current mirror circuit. The plurality of semiconductor gates are connected in parallel. | 07-18-2013 |
20130286749 | System and Method for Memory Array Decoding - A memory array includes a plurality of sense amplifiers and a first switch module. The plurality of sense amplifiers is connected respectively to a plurality of global bit lines. The plurality of sense amplifiers are configured to read data stored in a first block of memory cells of the memory array. The memory cells in the first block are located at intersections of a plurality of local bit lines and a first plurality of word lines. The first switch module is connected to a first group of the plurality of local bit lines and to a first group of the plurality of global bit lines. The first switch module is configured to selectively connect a subset of the first group of the plurality of local bit lines to the first group of the plurality of global bit lines. | 10-31-2013 |
20130294179 | CIRCUITS AND METHODS FOR CALIBRATING OFFSET IN AN AMPLIFIER - In one embodiment, the present disclosure includes a circuit comprising an amplifier having an input and an output, an offset detection circuit to detect an offset of the amplifier at the output of the amplifier, and an offset generation circuit having an input coupled to the offset detection circuit and an output coupled to the input of the amplifier to generate an offset at the input of the amplifier during an operational phase of the amplifier based on the detected offset. The generated offset cancels a least a portion of the offset of the amplifier. In one implementation, the amplifier is a sense amplifier in a memory. | 11-07-2013 |
20140071782 | Circuits, Architectures, Apparatuses, Systems, Algorithms, and Methods for Memory with Multiple Power Supplies and/or Multiple Low Power Modes - Circuits, architectures, a system and methods for memories with multiple power supplies and/or multiple low power modes. The circuit generally includes peripheral circuitry operating at a first voltage, a memory array operating at a second voltage, and translation circuitry configured to receive an input from the peripheral circuitry at the first voltage and provide an output to the memory array at the second voltage, the translation circuitry further configured to prevent leakage during a standard operating mode of the memory. The method generally includes operating peripheral circuitry at a first voltage from a first power rail, operating a memory array at the first voltage or a second voltage, the memory array being coupled to a second power rail, coupling the first and second power rails during standard operating mode when the memory array operates at the first voltage, otherwise not coupling the first and second power rails, and reducing leakage in the memory array during a leakage reduction mode by reducing a voltage differential between a ground plane in the memory array and the second power rail. | 03-13-2014 |
20140104924 | APPARATUS AND METHOD FOR REPAIRING RESISTIVE MEMORIES AND INCREASING OVERALL READ SENSITIVITY OF SENSE AMPLIFIERS - A memory includes a module and a demultiplexer. The module is configured to monitor outputs of sense amplifiers. Each of the outputs of the sense amplifiers is configured to be in a first state or a second state. The module is configured to determine that two or more of the outputs of the sense amplifiers are in a same state. The same state is the first state or the second state. The module is configured to output the state of the two or more outputs of the sense amplifiers. The demultiplexer is configured to provide the state of the two or more outputs of the sense amplifiers to a latch. | 04-17-2014 |
20140104926 | SYSTEMS AND METHODS FOR READING RESISTIVE RANDOM ACCESS MEMORY (RRAM) CELLS - A system including a resistive random access memory cell connected to a word line and a bit line and a pre-charge circuit configured to pre-charge the bit line to a first voltage with the word line being unselected. A driver circuit selects the word line at a first time subsequent to the bit line being charged to the first voltage. A comparator compares a second voltage on the bit line to a third voltage supplied to the comparator and generates an output based on the comparison. A latch latches the output of the comparator and generates a latched output. A pulse generator generates a pulse after a delay subsequent to the first time to clock the latch to latch the output of the comparator and generate the latched output. The latched output indicates a state of the resistive random access memory cell. | 04-17-2014 |
20140104927 | CONFIGURING RESISTIVE RANDOM ACCESS MEMORY (RRAM) ARRAY FOR WRITE OPERATIONS - A system includes a resistive random access memory cell and a driver circuit. The resistive random access memory cell includes a resistive element and a switching element, and has a first terminal connected to a bit line and a second terminal connected to a word line. The driver circuit is configured to apply, in response to selection of the resistive random access memory cell using the word line, a first voltage of a first polarity to the bit line to program the resistive random access memory cell to a first state by causing current to flow through the resistive element in a first direction, and a second voltage of a second polarity to the bit line to program the resistive random access memory cell to a second state by causing current to flow through the resistive element in a second direction. | 04-17-2014 |
20140104928 | METHOD AND APPARATUS FOR FORMING A CONTACT IN A CELL OF A RESISTIVE RANDOM ACCESS MEMORY TO REDUCE A VOLTAGE REQUIRED TO PROGRAM THE CELL - A cell of a resistive random access memory including a resistive element and an access device. The resistive element includes (i) a first electrode and (ii) a second electrode. The access device is configured to select and deselect the cell. The access device includes (i) a first terminal connected to a first contact and (i) a second terminal connected to a second contact. The second contact is connected to the second electrode of the resistive element via a third contact. The third contact includes (i) a first surface in contact with the second contact and (ii) a second surface in contact with the second electrode. The first surface defines a first surface area, and the second surface defines a second surface area. The first surface area is greater than the second surface area. | 04-17-2014 |
20140112057 | APPARATUS AND METHOD FOR REFORMING RESISTIVE MEMORY CELLS - A memory includes an array of memory cells, a first module and a second module. The first module is configured to compare a first state of a memory cell with a reference. The memory cell is in the array of memory cells. The second module is configured to, subsequent to a read cycle or a write cycle of the memory cell and based on the comparison, reform the memory cell to adjust a difference between the first state and a second state of the memory cell. | 04-24-2014 |
20140119103 | SRAM Cells Suitable for Fin Field-Effect Transistor (FinFET) Process - A static random access memory (SRAM) cell includes first and second n-channel transistors, first and second p-channel transistors, first and second enable transistors, and first and second pass gates. The first n-channel transistor, the first p-channel transistor, and the first enable transistor are connected in series between first and second reference potentials. The second n-channel transistor, the second p-channel transistor, and the second enable transistor are connected in series between the first and second reference potentials. The first pass gate is configured to selectively connect a first bitline to a first node. The first node is connected to a gate of the first n-channel transistor and a gate of the first p-channel transistor. The second pass gate is configured to selectively connect a second bitline to a second node. The second node is connected to a gate of the second n-channel transistor and a gate of the second p-channel transistor. | 05-01-2014 |
20140133217 | CONCURRENT USE OF SRAM CELLS WITH BOTH NMOS AND PMOS PASS GATES IN A MEMORY SYSTEM - A memory system includes first memory cells and second memory cells. Each of the first memory cells includes first and second pass gates including NMOS transistors. Each of the second memory cells include first and second pass gates including PMOS transistors. The first memory cells are pre-charged by one polarity of a voltage supply. The second memory cells are pre-charged by an opposite polarity of the voltage supply. | 05-15-2014 |
20140170832 | RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR CONTROLLING MANUFACTURING OF CORRESPONDING SUB-RESOLUTION FEATURES OF CONDUCTIVE AND RESISTIVE ELEMENTS - A method including: forming a stack of resistive layers; prior to or subsequent to forming the stack of resistive layers, forming a conductive layer; applying a mask layer on the stack of resistive layers or the conductive layer; forming a first spacer on the mask layer; and etching away a first portion of the mask layer using the first spacer as a first mask to provide a remainder. The method further includes: forming a second spacer on the stack of the resistive layers or the conductive layer and the remainder of the mask layer; etching away a second portion of the remainder of the mask layer to form an island; and using the island as a second mask, etching the stack of the resistive layers to form a resistive element of a memory, and etching the conductive layer to form a conductive element of the memory. | 06-19-2014 |
20140204682 | METHOD AND APPARATUS FOR SIMULTANEOUSLY ACCESSING A PLURALITY OF MEMORY CELLS IN A MEMORY ARRAY TO PERFORM A READ OPERATION AND/OR A WRITE OPERATION - A memory system includes a memory array and a read/write module. The memory array includes bit lines, word lines, and memory cells. Each of the memory cells is located at an intersection of a respective one of the bit lines and a respective one of the word lines. The memory cells include a first memory cell and a second memory cell. The first memory cell is located at the intersection of a first bit line of the bit lines and a first word line of the word lines. The second memory cell is located at the intersection of a second bit line of the bit lines and a second word line of the word lines. The read/write module is configured to concurrently activate the first memory cell and the second memory cell to simultaneously access both the first memory cell and the second memory cell. | 07-24-2014 |
20140215164 | Multiport Memory Architecture - The present disclosure describes techniques and apparatuses for multiport memory architecture. In some aspects serial data is received from a data port and converted to n-bit-wide words of data. The n-bit-wide words of data are then buffered as a k-word-long block of parallel data into a line of a multiline buffer as a block of k*n bits of data. The block of k*n bits of data is then transmitted to a multiport memory via a write bus effective to write the block of k*n bits of data to the multiport memory. | 07-31-2014 |
20140218093 | METHOD AND APPARATUS FOR TIMING CLOSURE - Aspects of the disclosure provide a circuit, such as an integrated circuit. The circuit includes a first circuit and a second circuit. The second circuit includes a delay circuit configured to cause the second circuit to have substantially matched delay characteristics of the first circuit in response to at least one parameter change of manufacturing, environmental and operational parameters, such as process variation, temperature variation, and supply voltage variation. | 08-07-2014 |
20150063004 | METHOD AND APPARATUS FOR REFORMING A MEMORY CELL OF A MEMORY - A memory including a memory cell and first and second modules. The memory cell has first and second states, where the second state is different than the first state. The first module, subsequent to an initial forming of the memory cell and subsequent to a read cycle or a write cycle of the memory cell, determines a first difference between the first state and a first predetermined threshold or a second difference between the first state and the second state. The second module, subsequent to the first module determining the first difference or the second difference, reforms the memory cell to reset and increase the first difference or the second difference. The second module, during the reforming of the memory cell, applies a first voltage to the memory cell. The first voltage is greater than a voltage applied to the memory cell during the read cycle or the write cycle. | 03-05-2015 |