Patent application number | Description | Published |
20080213556 | MATERIALS HAVING PREDEFINED MORPHOLOGIES AND METHODS OF FORMATION THEREOF - A material and an associated method of formation. A self-assembling block copolymer that includes a first block species and a second block species respectively characterized by a volume fraction of F | 09-04-2008 |
20090075472 | METHODS TO MITIGATE PLASMA DAMAGE IN ORGANOSILICATE DIELECTRICS - Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure. | 03-19-2009 |
20100055307 | Nanoporous Media with Lamellar Structures - A nanoporous material exhibiting a lamellar structure is disclosed. The material comprises three or more substantially parallel sheets of an organosilicate material, separated by highly porous spacer regions. The distance between the centers of the sheets lies between 1 nm and 50 nm. The highly porous spacer regions may be substantially free of condensed material. For the manufacture of such materials, a process is disclosed in which matrix non-amphiphilic polymeric material and templating polymeric material are dispersed in a solvent, where the templating polymeric material includes a polymeric amphiphilic material. The solvent with the polymeric materials is distributed onto a substrate. Organization is induced in the templating polymeric material. The solvent is removed, leaving the polymeric materials in place. The matrix polymeric material is cured, forming a lamellar structure. | 03-04-2010 |
20110183525 | Homogeneous Porous Low Dielectric Constant Materials - In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material. | 07-28-2011 |
20110245418 | Nanoporous Media Templated from Unsymmetrical Amphiphilic Porogens - Substantially or roughly spherical micellar structures useful in the formation of nanoporous materials by templating are disclosed. A roughly spherical micellar structure is formed by organization of one or more spatially unsymmetric organic amphiphilic molecules. Each of those molecules comprises a branched moiety and a second moiety. The branched moiety can form part of either the core or the surface of the spherical micellar structure, depending on the polarity of the environment. The roughly spherical micellar structures form in a thermosetting polymer matrix. They are employed in a templating process whereby the amphiphilic molecules are dispersed in the polymer matrix, the matrix is cured, and the porogens are then removed, leaving nanoscale pores. | 10-06-2011 |
20110245433 | Nanoporous Media Templated from Unsymmetrical Amphiphilic Porogens - Substantially or roughly spherical micellar structures useful in the formation of nanoporous materials by templating are disclosed. A roughly spherical micellar structure is formed by organization of one or more spatially unsymmetric organic amphiphilic molecules. Each of those molecules comprises a branched moiety and a second moiety. The branched moiety can form part of either the core or the surface of the spherical micellar structure, depending on the polarity of the environment. The roughly spherical micellar structures form in a thermosetting polymer matrix. They are employed in a templating process whereby the amphiphilic molecules are dispersed in the polymer matrix, the matrix is cured, and the porogens are then removed, leaving nanoscale pores. | 10-06-2011 |
20120282784 | HOMOGENEOUS POROUS LOW DIELECTRIC CONSTANT MATERIALS - In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one process on the structure; and after performing the at least one process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material. | 11-08-2012 |
20120329269 | METHODS TO MITIGATE PLASMA DAMAGE IN ORGANOSILICATE DIELECTRICS - Methods of minimizing or eliminating plasma damage to low k and ultra low k organosilicate intermetal dielectric layers are provided. The reduction of the plasma damage is effected by interrupting the etch and strip process flow at a suitable point to add an inventive treatment which protects the intermetal dielectric layer from plasma damage during the plasma strip process. Reduction or elimination of a plasma damaged region in this manner also enables reduction of the line bias between a line pattern in a photoresist and a metal line formed therefrom, and changes in the line width of the line trench due to a wet clean after the reactive ion etch employed for formation of the line trench and a via cavity. The reduced line bias has a beneficial effect on electrical yields of a metal interconnect structure. | 12-27-2012 |
20120329273 | HOMOGENEOUS POROUS LOW DIELECTRIC CONSTANT MATERIALS - In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to an exposed surface of the first layer; heating the structure to a first temperature to enable the filling material to homogeneously fill the plurality of pores; after filling the plurality of pores, performing at least one first process on the structure; after performing the at least one first process, removing the filling material from the plurality of pores by heating the structure to a second temperature to decompose the filling material; and after removing the filling material from the plurality of pores, performing at least one second process on the structure, where the at least one second process is performed at a third temperature that is greater than the second temperature. | 12-27-2012 |
20130017682 | Overburden Removal For Pore Fill Integration ApproachAANM Bruce; Robert L.AACI White PlainsAAST NYAACO USAAGP Bruce; Robert L. White Plains NY USAANM Dubois; Geraud Jean-MichelAACI San JoseAAST CAAACO USAAGP Dubois; Geraud Jean-Michel San Jose CA USAANM Frot; Theo J.AACI Los GatosAAST CAAACO USAAGP Frot; Theo J. Los Gatos CA USAANM Volksen; WilliAACI San JoseAAST CAAACO USAAGP Volksen; Willi San Jose CA US - In one exemplary embodiment of the invention, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer; after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores, where heating the structure results in residual filling material being left on the surface of the first layer; and after heating the structure, removing the residual filling material by applying a solvent wash. | 01-17-2013 |
20130017688 | Reduction Of Pore Fill Material DewettingAANM Dubois; Geraud Jean-MichelAACI San JoseAAST CAAACO USAAGP Dubois; Geraud Jean-Michel San Jose CA USAANM Frot; Theo J.AACI Los GatosAAST CAAACO USAAGP Frot; Theo J. Los Gatos CA USAANM Magbitang; Teddie P.AACI San JoseAAST CAAACO USAAGP Magbitang; Teddie P. San Jose CA USAANM Volksen; WilliAACI San JoseAAST CAAACO USAAGP Volksen; Willi San Jose CA US - In one exemplary embodiment, a method includes: providing a structure having a first layer overlying a substrate, where the first layer includes a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material includes a polymer and at least one additive, where the at least one additive includes at least one of a surfactant, a high molecular weight polymer and a solvent; and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer. | 01-17-2013 |
20130045337 | HOMOGENEOUS MODIFICATION OF POROUS FILMS - Porous films are homogeneously and partially (but not completely) filled. A composition (that includes a polymer) is brought into contact with a planar film that has interconnected pores throughout the film. The polymer then partially fills the pores within the film, e.g., in response to being heated. An additional treatment such as heating the polymer and/or applying radiation to the polymer increases the Young's modulus of the film. | 02-21-2013 |
20130045608 | REDUCTION OF PORE FILL MATERIAL DEWETTING - In one embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, includes operations comprising: providing a structure comprising a first layer overlying a substrate, where the first layer comprises a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material comprises a polymer and at least one additive, where the at least one additive comprises at least one of a surfactant, a high molecular weight polymer and a solvent (e.g., a high boiling point solvent); and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer. | 02-21-2013 |
20130056874 | Protection of intermetal dielectric layers in multilevel wiring structures - A semiconductor device is accepted at a stage of its fabrication, at which stage the device includes a diffusion-barrier cap-material (DBCM) layer and an intermetal dielectric layer covering the DBCM layer. The DBCM layer is exposed and it is suitable for removal by an etching procedure in a portion of a pattern contained in the intermetal dielectric layer. A silylation treatment is performed on the semiconductor device prior to the etching procedure for removing the DBCM layer. The intermetal dielectric layer of the completed device has surfaces in contact with metal interconnects and metal vias, and it may have an excess of carbon content near at least a portion of the these surfaces. | 03-07-2013 |
20130309466 | STRUCTURE INCLUDING A MATERIAL HAVING A PREDEFINED MORPHOLOGY - A structure. The structure includes a substrate and a material adhered to said substrate. The material includes a structural layer and an interfacial layer. The structural layer includes at least one crosslinkable polymer and nanostructures having a predefined morphology. The nanostructures are surrounded by the at least one crosslinkable polymer in the structural layer. The interfacial layer essentially lacks nanostructures and includes essentially the at least one crosslinkable polymer. | 11-21-2013 |
20140367356 | IN-SITU HARDMASK GENERATION - In some examples, a process to generate an in-situ hardmask layer on porous dielectric materials using the densifying action of a plasma in conjunction with a sacrificial polymeric filler, the latter which enables control of the hardmask thickness as well as a well-defined interface with the underlying ILD. | 12-18-2014 |