Patent application number | Description | Published |
20090205563 | TEMPERATURE-CONTROLLED PURGE GATE VALVE FOR CHEMICAL VAPOR DEPOSITION CHAMBER - The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl | 08-20-2009 |
20090283029 | ABATEMENT OF REACTION GASES FROM GALLIUM NITRIDE DEPOSITION - Methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment and methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material. | 11-19-2009 |
20120132922 | COMPOSITE SUBSTRATE WITH CRYSTALLINE SEED LAYER AND CARRIER LAYER WITH A COINCIDENT CLEAVAGE PLANE - A structure and a method can provide a crystalline seed layer material, such as GaN, on a crystalline carrier material, such as sapphire, aligned such that a common crystal plane exists between the two materials. The common crystal plane may provide for a fracture surface along a cleavage plane that may be oriented to be perpendicular to the top surface of an optoelectronic device as well as perpendicular to a light emission direction. | 05-31-2012 |
20130104802 | GALLIUM TRICHLORIDE INJECTION SCHEME | 05-02-2013 |
20130199441 | GAS INJECTORS FOR CHEMICAL VAPOUR DEPOSITION (CVD) SYSTEMS AND CVD SYSTEMS WITH THE SAME - The present invention provides improved gas injectors for use with CVD (chemical vapour deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates. | 08-08-2013 |
20130327266 | TEMPERATURE-CONTROLLED PURGE GATE VALVE FOR CHEMICAL VAPOR DEPOSITION CHAMBER - The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl | 12-12-2013 |
20140041584 | ABATEMENT OF REACTION GASES FROM GALLIUM NITRIDE DEPOSITION - Systems for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment is optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material. | 02-13-2014 |
Patent application number | Description | Published |
20090098343 | EPITAXIAL METHODS AND TEMPLATES GROWN BY THE METHODS - This invention provides methods for fabricating substantially continuous layers of a group III nitride semiconductor material having low defect densities and optionally having a selected crystal polarity. The methods include epitaxial growth nucleating and/or seeding on the upper portions of a plurality of pillars/islands of a group III nitride material that are irregularly arranged on a template structure. The upper portions of the islands have low defect densities and optionally have a selected crystal polarity. The invention also includes template structures having a substantially continuous layer of a masking material through which emerge upper portions of the pillars/islands. The invention also includes such template structures. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials. | 04-16-2009 |
20090214785 | THERMALIZATION OF GASEOUS PRECURSORS IN CVD REACTORS - The present invention relates to the field of semiconductor processing and provides apparatus and methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the invention comprises heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention comprises radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases. | 08-27-2009 |
20100180913 | METHODS FOR IN-SITU CHAMBER CLEANING PROCESS FOR HIGH VOLUME MANUFACTURE OF SEMICONDUCTOR MATERIALS - The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and apparatus for in-situ removal of undesired deposits in the interiors of reactor chambers, for example, on chamber walls and elsewhere. The invention provides methods according to which cleaning steps are integrated and incorporated into a high-throughput growth process. Preferably, the times when growth should be suspended and cleaning commenced and when cleaning should be terminated and growth resumed are automatically determined based on sensor inputs. The invention also provides reactor chamber systems for the efficient performance of the integrated cleaning/growth methods of this invention. | 07-22-2010 |
20100242835 | HIGH VOLUME DELIVERY SYSTEM FOR GALLIUM TRICHLORIDE - The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods and equipment are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the precursor is provided at a mass flow of at least 50 g Group III element/hour for a time of at least 48 hours to facilitate high volume manufacture of the semiconductor material. Advantageously, the mass flow of the gaseous Group III precursor is controlled to deliver the desired amount. | 09-30-2010 |
20100258053 | APPARATUS FOR DELIVERING PRECURSOR GASES TO AN EPITAXIAL GROWTH SUBSTRATE - This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that spatially separated from each other up until they impinge of a growth substrate and that have volumes adequate for high volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chamber without hindering the operation of mechanical and robot substrate handling equipment used with such chambers. This invention is useful for the high volume growth of numerous elemental and compound semiconductors, and particularly useful for the high volume growth of Group III-V compounds and GaN. | 10-14-2010 |
20110101373 | METHOD OF FORMING A COMPOSITE LASER SUBSTRATE - A composite substrate for laser devices is disclosed having improved wave guiding properties, improved lattice matching, improved thermal expansion matching, and improved thermal conductivity. The composite substrate has an intermediate layer ( | 05-05-2011 |
20110212546 | UV ABSORPTION BASED MONITOR AND CONTROL OF CHLORIDE GAS STREAM - A semiconductor growth system includes a chamber and a source of electromagnetic radiation. A detector is arranged to detect absorption of radiation from the source by a chloride- based chemical of the reaction chamber. A control system controls the operation of the chamber in response to the absorption of radiation by the chloride-based chemical. The control system controls the operation of the chamber by adjusting a parameter of the reaction chamber. | 09-01-2011 |
20120083101 | SYSTEMS AND METHODS FOR FORMING SEMICONDUCTOR MATERIALS BY ATOMIC LAYER DEPOSITION - Methods of depositing a III-V semiconductor material on a substrate include sequentially introducing a gaseous precursor of a group III element and a gaseous precursor of a group V element to the substrate by altering spatial positioning of the substrate with respect to a plurality of gas columns. For example, the substrate may be moved relative to a plurality of substantially aligned gas columns, each disposing a different precursor. Thermalizing gas injectors for generating the precursors may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. Deposition systems for forming one or more III-V semiconductor materials on a surface of the substrate may include one or more such thermalizing gas injectors configured to direct the precursor to the substrate via the plurality of gas columns. | 04-05-2012 |
20120118233 | SYSTEMS FOR FORMING SEMICONDUCTOR MATERIALS BY ATOMIC LAYER DEPOSITION - Methods of depositing a III-V semiconductor material on a substrate include sequentially introducing a gaseous precursor of a group III element and a gaseous precursor of a group V element to the substrate by altering spatial positioning of the substrate with respect to a plurality of gas columns. For example, the substrate may be moved relative to a plurality of substantially aligned gas columns, each disposing a different precursor. Thermalizing gas injectors for generating the precursors may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. Deposition systems for forming one or more III-V semiconductor materials on a surface of the substrate may include one or more such thermalizing gas injectors configured to direct the precursor to the substrate via the plurality of gas columns. | 05-17-2012 |
20120161289 | STRAIN RELAXATION USING METAL MATERIALS AND RELATED STRUCTURES - Methods of fabricating semiconductor structures include forming a plurality of openings extending through a semiconductor material and at least partially through a metal material and deforming the metal material to relax a remaining portion of the semiconductor material. The metal material may be deformed exposing the metal material to a temperature sufficient it to alter (i.e., increase) its ductility. The metal material may be formed from one or more of hafnium, zirconium, yttrium and a metallic glass. Another semiconductor material may be deposited over the remaining portions of the semiconductor material, and a portion the metal material may be removed from between each of the remaining portions of the semiconductor material. Semiconductor structures may be formed using such methods. | 06-28-2012 |
20120199845 | METALLIC CARRIER FOR LAYER TRANSFER AND METHODS FOR FORMING THE SAME - Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate a semiconductor substrate by forming a weakened zone in a donor structure at a predetermined depth to define a transfer layer between an attachment surface and the weakened zone and a residual donor structure between the weakened zone and a surface opposite the attachment surface. A metallic layer is formed on the attachment surface and provides an ohmic contact between the metallic layer and the transfer layer, a matched Coefficient of Thermal Expansion (CTE) for the metallic layer that closely matches a CTE of the transfer layer, and sufficient stiffness to provide structural support to the transfer layer. The transfer layer is separated from the donor structure at the weakened zone to form a composite substrate comprising the transfer layer the metallic layer. | 08-09-2012 |
20130052806 | DEPOSITION SYSTEMS HAVING ACCESS GATES AT DESIRABLE LOCATIONS, AND RELATED METHODS - Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device. | 02-28-2013 |
20130137247 | THERMALIZATION OF GASEOUS PRECURSORS IN CVD REACTORS - The present invention relates to the field of semiconductor processing and provides methods that improve chemical vapor deposition (CVD) of semiconductor materials by promoting more efficient thermalization of precursor gases prior to their reaction. In preferred embodiments, the method provides heat transfer structures and their arrangement within a CVD reactor so as to promote heat transfer to flowing process gases. In certain preferred embodiments applicable to CVD reactors transparent to radiation from heat lamps, the invention provides radiation-absorbent surfaces placed to intercept radiation from the heat lamps and to transfer it to flowing process gases. | 05-30-2013 |
20130161636 | METHODS OF FABRICATING SEMICONDUCTOR STRUCTURES USING THERMAL SPRAY PROCESSES, AND SEMICONDUCTOR STRUCTURES FABRICATED USING SUCH METHODS - Methods for fabricating a semiconductor substrate include forming a first substrate layer over a surface of a first semiconductor layer, and thermally spraying a second substrate layer on a side of the first substrate layer opposite the first semiconductor layer. At least one additional semiconductor layer is epitaxially grown over the first semiconductor layer on a side thereof opposite the first substrate layer. At least one of the first substrate layer and the second substrate layer may be formulated to exhibit a Coefficient of Thermal Expansion (CTE) closely matching a CTE of at least one of the first semiconductor layer and the at least one additional semiconductor layer. Semiconductor structures are fabricated using such methods. | 06-27-2013 |
20130161637 | SEMICONDUCTOR DEVICES INCLUDING SUBSTRATE LAYERS AND OVERLYING SEMICONDUCTOR LAYERS HAVING CLOSELY MATCHING COEFFICIENTS OF THERMAL EXPANSION, AND RELATED METHODS - Embodiments relate to semiconductor structures and methods of forming semiconductor structures. The semiconductor structures include a substrate layer having a CTE that closely matches a CTE of one or more layers of semiconductor material formed over the substrate layer. In some embodiments, the substrate layers may comprise a composite substrate material including two or more elements. The substrate layers may comprise a metal material and/or a ceramic material in some embodiments. | 06-27-2013 |
20130221496 | METALLIC CARRIER FOR LAYER TRANSFER AND METHODS FOR FORMING THE SAME - Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate a semiconductor substrate by forming a weakened zone in a donor structure at a predetermined depth to define a transfer layer between an attachment surface and the weakened zone and a residual donor structure between the weakened zone and a surface opposite the attachment surface. A metallic layer is formed on the attachment surface and provides an ohmic contact between the metallic layer and the transfer layer, a matched Coefficient of Thermal Expansion (CTE) for the metallic layer that closely matches a CTE of the transfer layer, and sufficient stiffness to provide structural support to the transfer layer. The transfer layer is separated from the donor structure at the weakened zone to form a composite substrate comprising the transfer layer the metallic layer. | 08-29-2013 |
20130234148 | METHODS OF FORMING SEMICONDUCTOR STRUCTURES INCLUDING III-V SEMICONDUCTOR MATERIAL USING SUBSTRATES COMPRISING MOLYBDENUM, AND STRUCTURES FORMED BY SUCH METHODS - Methods of fabricating semiconductor structures include the formation of molybdenum nitride at one or more surfaces of a substrate comprising molybdenum, and providing a layer of III-V semiconductor material such as GaN over the substrate. Semiconductor structures formed by methods described herein may include a substrate comprising molybdenum, molybdenum nitride at one or more surfaces of the substrate, and a layer of GaN bonded to the molybdenum nitride. | 09-12-2013 |
20130295708 | METHODS FOR FORMING SEMICONDUCTOR MATERIALS BY ATOMIC LAYER DEPOSITION USING HALIDE PRECURSORS - Methods of depositing a III-V semiconductor material on a substrate include sequentially introducing a gaseous precursor of a group III element and a gaseous precursor of a group V element to the substrate by altering spatial positioning of the substrate with respect to a plurality of gas columns. For example, the substrate may be moved relative to a plurality of substantially aligned gas columns, each disposing a different precursor. Thermalizing gas injectors for generating the precursors may include an inlet, a thermalizing conduit, a liquid container configured to hold a liquid reagent therein, and an outlet. Deposition systems for forming one or more III-V semiconductor materials on a surface of the substrate may include one or more such thermalizing gas injectors configured to direct the precursor to the substrate via the plurality of gas columns. | 11-07-2013 |
20140138796 | STRAIN RELAXATION USING METAL MATERIALS AND RELATED STRUCTURES - Methods of fabricating semiconductor structures include forming a plurality of openings extending through a semiconductor material and at least partially through a metal material and deforming the metal material to relax a remaining portion of the semiconductor material. The metal material may be deformed by exposing the metal material to a temperature sufficient to alter (i.e., increase) its ductility. The metal material may be formed from one or more of hafnium, zirconium, yttrium, and a metallic glass. Another semiconductor material may be deposited over the remaining portions of the semiconductor material, and a portion of the metal material may be removed from between each of the remaining portions of the semiconductor material. Semiconductor structures may be formed using such methods. | 05-22-2014 |