Patent application number | Description | Published |
20090004370 | Metal Inks, Methods of Making the Same, and Methods for Printing and/or Forming Metal Films - Printable metal formulations, methods of making the formulations, and methods of coating or printing thin films from metal ink precursors are disclosed. The metal formulation generally includes one or more Group 4, 5, 6, 7, 8, 9, 10, 11, or 12 metal salts or metal complexes, one or more solvents adapted to facilitate coating and/or printing of the formulation, and one or more optional additives that form (only) gaseous or volatile byproducts upon reduction of the metal salt or metal complex to an elemental metal and/or alloy thereof. The formulation may be made by combining the metal salt(s) or metal complex(es) and the solvent(s), and dissolving the metal salt(s) or metal complex(es) in the solvent(s) to form the formulation. Thin films may be made by coating or printing the metal formulation on a substrate; removing the solvents to form a metal-containing precursor film; and reducing the metal-containing precursor film. | 01-01-2009 |
20100022078 | Aluminum Inks and Methods of Making the Same, Methods for Depositing Aluminum Inks, and Films Formed by Printing and/or Depositing an Aluminum Ink - Aluminum metal ink compositions, methods of forming such compositions, and methods of forming aluminum metal layers and/or patterns are disclosed. The ink composition includes an aluminum metal precursor and an organic solvent. Conductive structures may be made using such ink compositions by printing or coating the aluminum precursor ink on a substrate (decomposing the aluminum metal precursors in the ink) and curing the composition. The present aluminum precursor inks provide aluminum films having high conductivity, and reduce the number of inks and printing steps needed to fabricate printed, integrated circuits. | 01-28-2010 |
20110178321 | Dopant Group-Substituted Semiconductor Precursor Compounds, Compositions Containing the Same, and Methods of Making Such Compounds and Compositions - Dopant-group substituted (cyclo)silane compounds, liquid-phase compositions containing such compounds, and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous or polycrystalline silicon film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a doped “liquid silicon” composition. | 07-21-2011 |
20110197783 | Doped Polysilanes, Compositions Containing the Same, Methods for Making the Same, and Films Formed Therefrom - Doped polysilanes, inks containing the same, and methods for their preparation and use are disclosed. The doped polysilane generally has the formula H-[A | 08-18-2011 |
20130026453 | Methods of Polymerizing Silanes and Cyclosilanes Using N-Heterocyclic Carbenes, Metal Complexes Having N-Heterocyclic Carbene Ligands, and Lanthanide Compounds - Compositions and methods for controlled polymerization and/or oligomerization of silane (and optionally cyclosilane) compounds, including those of the general formulae Si | 01-31-2013 |
20130344301 | PRINT PROCESSING FOR PATTERNED CONDUCTOR, SEMICONDUCTOR AND DIELECTRIC MATERIALS - Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material. | 12-26-2013 |
20140001405 | Highly Luminescent Nanostructures and Methods of Producing Same | 01-02-2014 |
20150232756 | HIGHLY LUMINESCENT NANOSTRUCTURES AND METHODS OF PRODUCING SAME - Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis. | 08-20-2015 |
20150236195 | HIGHLY LUMINESCENT NANOSTRUCTURES AND METHODS OF PRODUCING SAME - Highly luminescent nanostructures, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. The nanostructures can comprise ligands, including C5-C8 carboxylic acid ligands employed during shell formation and/or dicarboxylic or polycarboxylic acid ligands provided after synthesis. Processes for producing such highly luminescent nanostructures are also provided, including methods for enriching nanostructure cores with indium and techniques for shell synthesis. | 08-20-2015 |