Patent application number | Description | Published |
20080217738 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An upper electrode film includes a first conductive oxidation layer made of an oxide expressed by a chemical formula M | 09-11-2008 |
20080224195 | SEMICONDUCTOR DEVICE WITH FERRO-ELECTRIC CAPACITOR - A semiconductor device has a ferro-electric capacitor with small leak current and less process deterioration even upon miniaturization. The semiconductor device includes: a semiconductor element formed in a semiconductor substrate; lamination of an interlayer insulating film and a lower insulating shielding film having a hydrogen/moisture shielding function, the lamination being formed covering the semiconductor element; a conductive adhesion enhancing film formed above the lower insulating shielding film; and a ferro-electric capacitor including a lower electrode formed above the conductive adhesion enhancing film, a ferro-electric film formed on the lower electrode and being disposed within the lower electrode as viewed in plan, and an upper electrode formed on the ferro-electric film and being disposed within the ferro-electric film as viewed in plan, wherein the conductive adhesion enhancing film has a function of improving adhesion of the lower electrode and reducing leak current of the ferro-electric capacitor. | 09-18-2008 |
20080237795 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a semiconductor device which includes a base insulating film formed on a semiconductor substrate, a capacitor formed on the base insulating film, an interlayer insulating film covering the capacitor, a first layer metal wiring formed on the interlayer insulating film, a single-layer first insulating film which covers the interlayer insulating film and the first layer metal wiring and has a first film thickness above the first layer metal wiring, a first capacitor protective insulating film formed on the first insulating film, a first cover insulating film which is formed on the first capacitor protective insulating film and has a second film thickness thicker than the first film thickness, above the first layer metal wiring, a third hole formed in the insulating films on the first layer metal wiring, and a fifth conductive plug formed in the third hole. | 10-02-2008 |
20080237866 | SEMICONDUCTOR DEVICE WITH STRENGTHENED PADS - A semiconductor device is provided having an increased hardness against contact of a probe needle. The semiconductor device includes: a semiconductor substrate; a semiconductor element formed in the semiconductor substrate; an insulating film formed above the semiconductor substrate and covering the semiconductor element; a multilayer wiring structure formed in the insulating film; and a pad electrode structure connected to the multilayer wiring structure and formed on the insulating film, the pad electrode structure including a conductive adhesion film, a conductive pad electrode formed above the conductive adhesion film, and a conductive hydrogen barrier film formed above the conductive pad electrode. | 10-02-2008 |
20080261332 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a ferroelectric film on a first conductive film by a sol-gel method; forming a first conductive metal oxide film on the ferroelectric film; carrying out a first annealing on the first conductive metal oxide film; forming a second conductive metal oxide film on the first conductive metal oxide film, so that the first and second conductive films serve as a second conductive film; and forming a capacitor by patterning the first conductive film, the ferroelectric film and the second conductive film. In the step of forming the first conductive metal oxide film, ferroelectric characteristics are adjusted with a flow rate ratio of oxygen by utilizing the fact that the ferroelectric characteristics of the ferroelectric film improve as the flow rate ratio of oxygen in a sputtering gas increases. | 10-23-2008 |
20080311683 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method of manufacturing a semiconductor device including forming a lower electrode over a substrate, increasing the temperature of the substrate with the lower electrode to a predetermined temperature under mixture gas atmosphere of inert gas and oxygen gas, forming a dielectric film on the lower electrode by using an organic metal raw material after the temperature reaches the predetermined temperature, and forming an upper electrode on the dielectric film. | 12-18-2008 |
20090020797 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An FeRAM is produced by a method including the steps of forming a lower electrode layer ( | 01-22-2009 |
20090026514 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A ferroelectric memory is constituted to comprise a capacitor being formed above a semiconductor substrate ( | 01-29-2009 |
20090029485 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A capacitor in which a ferroelectric film ( | 01-29-2009 |
20090280577 | Manufacturing method of a semiconductor device - There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode. | 11-12-2009 |
20090298204 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to the present invention, a method of fabricating a semiconductor device is provided including forming a first interlayer insulating film | 12-03-2009 |
20090309188 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes a substrate and a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode. The upper electrode includes a first layer formed of an oxide whose stoichiometric composition is expressed as AOx | 12-17-2009 |
20090315144 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - An upper electrode of a ferroelectric capacitor has a first layer formed of a first oxide expressed by a chemical formula AO | 12-24-2009 |
20090321877 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film. | 12-31-2009 |
20100078762 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - In a semiconductor device manufacturing method, an amorphous or microcrystalline metal oxide film is formed over a first metal film which is preferentially oriented along a predetermined crystal plane. After that, a ferroelectric film is formed by a MOCVD method. When the ferroelectric film is formed, the metal oxide film formed over the first metal film is reduced to a second metal film and the ferroelectric film is formed over the second metal film. When the ferroelectric film is formed, the amorphous or microcrystalline metal oxide film is apt to be reduced uniformly. As a result, the second metal film the orientation of which is good is obtained and the ferroelectric film the orientation of which is good is formed over the second metal film. After the ferroelectric film is formed, an upper electrode is formed over the ferroelectric film. | 04-01-2010 |
20100105152 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrO | 04-29-2010 |
20100207178 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film. | 08-19-2010 |
20100224921 | SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR - A semiconductor device includes a ferroelectric capacitor formed above the lower interlevel insulating film covering a MOS transistor formed on a semiconductor substrate, including lamination of a lower electrode, an oxide ferroelectric film, a first upper electrode made of conductive oxide having a stoichiometric composition AO | 09-09-2010 |
20110091998 | SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR - A semiconductor device includes a ferroelectric capacitor formed above the lower interlevel insulating film covering a MOS transistor formed on a semiconductor substrate, including lamination of a lower electrode, an oxide ferroelectric film, a first upper electrode made of conductive oxide having a stoichiometric composition AO | 04-21-2011 |
20110165702 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A ferroelectric capacitor is formed over a semiconductor substrate ( | 07-07-2011 |
20110203916 | MAGNETRON-SPUTTERING FILM-FORMING APPARATUS AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE - A magnetron-sputtering film-forming apparatus includes: a vacuum film-forming chamber ( | 08-25-2011 |
20110204479 | SEMICONDUCTOR DEVICE - The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film. | 08-25-2011 |
20110210424 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Ferroelectric capacitors ( | 09-01-2011 |
20110217792 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - An FeRAM is produced by a method including the steps of forming a lower electrode layer ( | 09-08-2011 |
20120034712 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method for manufacturing a semiconductor device including a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film. | 02-09-2012 |
20120077288 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to the present invention, a method of fabricating a semiconductor device is provided including forming a first interlayer insulating film | 03-29-2012 |
20120094398 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - In a semiconductor device manufacturing method, an amorphous or microcrystalline metal oxide film is formed over a first metal film which is preferentially oriented along a predetermined crystal plane. After that, a ferroelectric film is formed by a MOCVD method. When the ferroelectric film is formed, the metal oxide film formed over the first metal film is reduced to a second metal film and the ferroelectric film is formed over the second metal film. When the ferroelectric film is formed, the amorphous or microcrystalline metal oxide film is apt to be reduced uniformly. As a result, the second metal film the orientation of which is good is obtained and the ferroelectric film the orientation of which is good is formed over the second metal film. After the ferroelectric film is formed, an upper electrode is formed over the ferroelectric film. | 04-19-2012 |
20120107963 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a semiconductor device which is characterized as follows. The semiconductor device includes: an interlayer insulating film formed above a semiconductor substrate and provided with a hole above an impurity diffusion region; a conductive plug formed in the hole and electrically connected to the impurity diffusion region; a conductive oxygen barrier film formed on the conductive plug and the interlayer insulating film around the conductive plug; a conductive anti-diffusion film formed on the conductive oxygen barrier film; and a capacitor that has a lower electrode which is formed on the conductive anti-diffusion film and which exposes platinum or palladium on the upper surface, a capacitor dielectric film made of a ferroelectric material, and an upper electrode. The conductive anti-diffusion film is made of a non-oxide conductive material for preventing the diffusion of the constituent element of the capacitor dielectric film. | 05-03-2012 |
20120171784 | MAGNETRON-SPUTTERING FILM-FORMING APPARATUS AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE - A magnetron-sputtering film-forming apparatus includes: a vacuum film-forming chamber ( | 07-05-2012 |
20120171785 | MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE - There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode. | 07-05-2012 |
20120220057 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Ferroelectric capacitors ( | 08-30-2012 |
20120276659 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An impurity-doped PZT film in an amorphous state doped with La, Ca, Sr, Si, Nb and/or the like is formed on a Pt film composing a bottom electrode film. Next, crystallization annealing for the impurity-doped PZT film is performed. Next, a PZT film is formed on the impurity-doped PZT film by an MOCVD method. Thereafter, an IrO | 11-01-2012 |
20130043561 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a capacitor dielectric film formed on a lower electrode and made of a ferroelectric material, and an upper electrode formed on a capacitor dielectric film, wherein the lower electrode includes a lowest conductive layer and an upper conductive layer, the lowest conductive layer being made of a noble metal other than iridium, and the upper conductive layer being formed on the lowest conductive layer and made of a conductive material, which is different from a material for the lowest conductive layer, and which is other than platinum. | 02-21-2013 |
20130122679 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The semiconductor device has an insulation layer formed over a semiconductor substrate, a conductor plug | 05-16-2013 |
20130140614 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film. | 06-06-2013 |
20130143333 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes a substrate and a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode. The upper electrode includes a first layer formed of an oxide whose stoichiometric composition is expressed as AOx | 06-06-2013 |
20130149796 | SEMICONDUCTOR DEVICE WITH FERRO-ELECTRIC CAPACITOR - A semiconductor device has a ferro-electric capacitor with small leak current and less process deterioration even upon miniaturization. The semiconductor device includes: a semiconductor element formed in a semiconductor substrate; lamination of an interlayer insulating film and a lower insulating shielding film having a hydrogen/moisture shielding function, the lamination being formed covering the semiconductor element; a conductive adhesion enhancing film formed above the lower insulating shielding film; and a ferro-electric capacitor including a lower electrode formed above the conductive adhesion enhancing film, a ferro-electric film formed on the lower electrode and being disposed within the lower electrode as viewed in plan, and an upper electrode formed on the ferro-electric film and being disposed within the ferro-electric film as viewed in plan, wherein the conductive adhesion enhancing film has a function of improving adhesion of the lower electrode and reducing leak current of the ferro-electric capacitor. | 06-13-2013 |
20130177997 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - An upper electrode of a ferroelectric capacitor has a first layer formed of a first oxide expressed by a chemical formula AO | 07-11-2013 |
20140030824 | SEMICONDUCTOR DEVICE HAVING CAPACITOR WITH CAPACITOR FILM HELD BETWEEN LOWER ELECTRODE AND UPPER ELECTRODE - A ferroelectric memory is constituted to comprise a capacitor being formed above a semiconductor substrate ( | 01-30-2014 |