Patent application number | Description | Published |
20140002188 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS | 01-02-2014 |
20140175629 | APPARATUS AND METHODS FOR REDUCING IMPACT OF HIGH RF LOSS PLATING - To reduce the radio frequency (RF) losses associated with high RF loss plating, such as, for example, Nickel/Palladium/Gold (Ni/Pd/Au) plating, an on-die passive device, such as a capacitor, resistor, or inductor, associated with a radio frequency integrated circuit (RFIC) is placed in an RF upper signal path with respect to the RF signal output of the RFIC. By placing the on-die passive device in the RF upper signal path, the RF current does not directly pass through the high RF loss plating material of the passive device bonding pad. | 06-26-2014 |
20140320205 | AUTOTRANSFORMER-BASED IMPEDANCE MATCHING CIRCUITS AND METHODS FOR RADIO-FREQUENCY APPLICATIONS - Disclosed are devices and methods related to autotransformer-based impedance matching for radio-frequency (RF) applications. In some embodiments, an impedance matching device can include a primary metal trace and a secondary metal trace, each having a respective number of turns. Such metal traces can be interconnected to form an autotransformer with the primary metal trace and the secondary metal trace being in respective planes separated by a selected distance. Such an autotransformer can be utilized to, for example, facilitate impedance matching of an amplified RF signal from a power amplifier (PA). In some embodiments, the impedance matching device can be implemented as an integrated passive device (IPD) mountable on a packaging substrate. Such an IPD can be configured to allow stacking of another component on the IPD to yield a number of desirable features in products such as RF modules. | 10-30-2014 |
20140320252 | LOW LOSS IMPEDANCE TRANSFORMERS IMPLEMENTED AS INTEGRATED PASSIVE DEVICES AND RELATED METHODS THEREOF - Disclosed are apparatus and methods related to low loss impedance transformers implemented as integrated passive devices (IPDs). In some embodiments, an IPD can include an autotransformer implemented within a body. The autotransformer can include primary and secondary metal traces implemented in respective planes separated by a distance. The autotransformer can be configured to, for example, facilitate impedance matching of radio-frequency (RF) signals. In some embodiments, the IPD can include a surface that allows mounting of one or more components thereon to provide space savings in RF modules. Examples of fabrication methods as well as products that can benefit from such IPDs are disclosed. | 10-30-2014 |
20150044863 | SYSTEMS AND METHODS TO FABRICATE A RADIO FREQUENCY INTEGRATED CIRCUIT - To reduce radio frequency (RF) losses during operation of a radio frequency integrated circuit (RFIC) module, the RFIC module is fabricated such that at least one of an edge of the wirebond pad on the copper trace and a sidewall of the copper trace is free from high-resistivity plating material. The unplated portion provides a path for the RF current to flow around the high-resistivity material, which reduces the RF signal loss associated with the high resistivity plating material. | 02-12-2015 |
20150061092 | APPARATUS AND METHODS FOR REDUCING IMPACT OF HIGH RF LOSS PLATING - To reduce the radio frequency (RF) losses associated with high RF loss plating, such as, for example, Nickel/Palladium/Gold (Ni/Pd/Au) plating, an on-die passive device, such as a capacitor, resistor, or inductor, associated with a radio frequency integrated circuit (RFIC) is placed in an RF upper signal path with respect to the RF signal output of the RFIC. By placing the on-die passive device in the RF upper signal path, the RF current does not directly pass through the high RF loss plating material of the passive device bonding pad. | 03-05-2015 |
20150326181 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS - A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10 | 11-12-2015 |
20150326182 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS - A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×10 | 11-12-2015 |
20150326183 | POWER AMPLIFIER MODULES INCLUDING RELATED SYSTEMS, DEVICES, AND METHODS - One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof. | 11-12-2015 |