Patent application number | Description | Published |
20100276812 | EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF - A semiconductor device comprises a substrate, a conductive layer deposited on a substrate and an epitaxial layer deposited on the conductive layer. The conductive layer is patterned to include a first pattern. The first pattern includes a major surface and a plurality of grids defined in the major surface. The major surface includes a plurality of first lines and a connecting portion. The connecting portion is connected to an electrode. The epitaxial layer covers the grids and the first lines between the adjacent grids. | 11-04-2010 |
20120261702 | LED, LED CHIP AND METHOD OF FORMING THE SAME - A method for manufacturing a light emitting diode chip is provided, comprising: providing a substrate, an upper surface of which comprising a plurality of micro-bulges formed thereon; forming a first type semiconductor layer, a light emitting layer and a second type semiconductor layer on the upper surface of the substrate successively; partially etching the second type semiconductor layer and the light emitting layer to form an electrode bonding area on the first type semiconductor layer; and forming a first electrode structure on the electrode bonding area and forming a second electrode structure on the second type semiconductor layer. A LED chip and a LED comprising the same are also provided. | 10-18-2012 |
20120267607 | EPITAXIAY WAFER, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING LED CHIP - A method for manufacturing an epitaxial wafer for a light emitting diode (LED) is provided. The method may comprise: forming a back coating layer on a back surface of a substrate; forming a buffer layer on a top surface of the substrate; forming an N-type semiconductor layer on the buffer layer; forming a multi-quantum well layer on the N-type semiconductor layer; and forming a P-type semiconductor layer on the multi-quantum well layer. An epitaxial wafer and a method for manufacturing an LED chip are also provided. | 10-25-2012 |
20120267641 | EPITAXIAL WAFER FOR LIGHT EMITTING DIODE, LIGHT EMITTING DIODE CHIP AND METHODS FOR MANUFACTURING THE SAME - An epitaxial wafer for a light emitting diode (LED) and a method for manufacturing the same are provided. The method comprises: providing a substrate; forming a first LED epitaxial structure on a first surface of the substrate, in which the first LED epitaxial structure comprises a first n-type semiconductor layer, a first light emitting layer, a first anti-diffusion layer between the first n-type semiconductor layer and the first light emitting layer, a first p-type semiconductor layer, and a second anti-diffusion layer between the first p-type semiconductor layer and the first light emitting layer; and forming a second LED epitaxial structure on a second surface of the substrate. An LED chip comprising the epitaxial wafer and a method for manufacturing the same are also provided. | 10-25-2012 |
20130299861 | LED STRUCTURE, LED DEVICE AND METHODS FOR FORMING THE SAME - A light emitting diode (LED) structure, a LED device and methods for forming the same are provided. The LED structure comprises a LED wafer; and a phosphor layer having a flat surface and formed above a light emitting surface of the LED wafer, in which the phosphor layer is formed by centrifugal spin coating. | 11-14-2013 |
20130320355 | Substrate Structure, Method of Forming the Substrate Structure and Chip Comprising the Substrate Structure - A groove structure formed on a surface of a substrate. The groove structure includes a lateral epitaxial pattern in a cross section perpendicular to the surface, which has: a first edge inclined to the surface; a second edge adjacent to first edge and parallel to the surface; a third edge parallel to the first edge, having a projection on the surface covering the second edge; and a fourth edge adjacent to the third edge. A first intersection between the second edge and the third edge on the second edge and an injection of a second intersection between the third edge and the fourth edge on the second edge are located on two sides of a third intersection between the first edge and the second edge, or the injection of the second intersection between the third edge and the fourth edge on the second edge coincides with the third intersection. | 12-05-2013 |
20140091355 | METHOD FOR FORMING CURRENT DIFFUSION LAYER IN LIGHT EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME - A method of forming a current diffusion layer is provided that comprises providing an epitaxial wafer. The method further comprises depositing ITO source material on the epitaxial wafer to form a base ITO layer by a direct current electron gun and depositing ZnO source material, during simultaneous deposition of the ITO source material, on the base ITO layer to form a ZnO doped ITO layer by a pulse current electron gun. The ZnO source material is deposited at a deposition rate higher than the rate at which the ITO source material is deposited. Generation and termination of current may be controlled by adjusting a duty cycle of pulse current provided by the pulse current electron gun and result in discontinuous deposition of the ZnO source material. The method further comprises depositing the ITO source material on the ZnO doped ITO layer to cover the ZnO doped ITO layer and form a finished ITO layer. | 04-03-2014 |