Patent application number | Description | Published |
20080215261 | DESIGN STRUCTURE FOR ENHANCING YIELD AND PERFORMANCE OF CMOS IMAGING SENSORS - A design structure for replacing a defective pixels in a pixel array is presented. The design structure includes means for identifying a defective pixel in the pixel array, means for generating a code including information corresponding to the defective pixel row and column; means for decoding the information; and means for generating a signal that permanently identifies the defective pixel row and column based on the decoded information. The design structure further includes means for substituting data from the defective pixel with data from a functioning pixel disposed in a same row as, and next to, the defective pixel based on the generated signal. | 09-04-2008 |
20080218290 | Automatic Driver/Transmission Line/Receiver Impedance Matching Circuitry - An impedance matcher that automatically matches impedance between a driver and a receiver. The impedance matcher includes a phase-locked loop (PLL) circuit that locks onto a data signal provided by the driver. The impedance matcher also includes tunable impedance matching circuitry responsive to one or more voltage-controlled oscillator control signals within the PLL circuit so as to generate an output signal that is impedance matched with the receiver. | 09-11-2008 |
20080237450 | STRUCTURE FOR A CMOS IMAGING SENSOR - A design structure for a CMOS image sensor and active pixel cell design that provides an output signal representing an incident illumination light level that is adapted for time domain analysis. Thus, the noise sources associated with charge integration and the contribution of dark current to it, is avoided. The active pixel cell design implements only three FETs: a transfer device, a reset device and an output transistor device having one diffusion connected to a Row Select signal. In this mode of operation, use is made of the voltage decay at the photo diode to generate a pixel output at one diffusion of the output transistor device, which is a pulse with fixed amplitude independent of the incident illumination level. For use of an NFET output transistor device, the pulse width is an inverse function of the incident illumination level. For a PFET output transistor device, the output pulse has a time delay, from a reference signal, by an amount that is an inverse function of the incident illumination level. | 10-02-2008 |
20090021289 | Voltage Detection Circuit in an Integrated Circuit and Method of Generating a Trigger Flag Signal - An integrated circuit that includes at least one tunneling device voltage detection circuit for generating a trigger flag signal. The tunneling device voltage detection circuit includes first and second voltage dividers receiving a supply voltage and having corresponding respective first and second internal node output voltages. The first and second voltage dividers are configured so the first output voltage is linear relative to the supply voltage and so that the second output voltage is nonlinear relative to the supply voltage. As the supply voltage ramps up, the profiles of the first and second output voltage cross at a particular voltage. An operational amplifier circuit senses when the first and second output voltages become equal and, in response thereto, outputs a trigger signal that indicates that the supply voltage has reached a certain level. | 01-22-2009 |
20090033389 | MICRO-PHASE ADJUSTING AND MICRO-PHASE ADJUSTING MIXER CIRCUITS DESIGNED WITH STANDARD FIELD EFFECT TRANSISTOR STRUCTURES - Disclosed herein are embodiments of a programmable phase adjusting circuit, a programmable phase adjusting mixer circuit and design structures for these circuits. These circuits comprise a variable delay device connected between input and output nodes. The device includes multiple FETs with input diffusion regions that are connected to a voltage rail via switches so that they can be selectively biased, gates that are connected in series to the input node so that a periodic input signal can be propagated sequentially through each of the gates and output diffusion regions that are connected in parallel to the output node. A current source is connected between the output node and another voltage rail for biasing the output node when the variable delay device is off. The variable delay device enables a circuit in which small increments of selectable phase adjustments can be made to the periodic input signal as a function of propagation delay. | 02-05-2009 |
20090033395 | MULTIPLE SOURCE-SINGLE DRAIN FIELD EFFECT SEMICONDUCTOR DEVICE AND CIRCUIT - Disclosed are embodiments of a variable-delay field effect transistor (FET) having multiple source regions that can be individually and selectively biased to provide an electrical connection to a single drain region. Delay is a function of which of the multiple source regions is/are selectively biased as well as a function of gate resistance and capacitance. Such a variable-delay FET can be incorporated into a phase adjusting circuit, which uses gate propagation delays to selectively phase adjust an input signal. The phase adjusting circuit can be tuned by incorporating non-salicided resistances and additional capacitance at various positions on the gate structure. The phase adjusting circuit can further be modified into a phase adjusting mixer circuit that enables a phase adjusted signal to be combined with an additional signal. | 02-05-2009 |
20090057804 | THRESHOLD VOLTAGE COMPENSATION FOR PIXEL DESIGN OF CMOS IMAGE SENSORS - The present disclosure is directed to a CMOS active pixel sensor that compensates for variations in a threshold voltage of a source follower contained therein. A structure in accordance with an embodiment includes: a replica source follower transistor; a system for creating a current in said replica source follower transistor such that a gate-source voltage of said replica source follower is substantially equal to a threshold voltage of said replica source follower; and a current mirror for biasing the isolation source follower transistor at a same current density as the replica source follower transistor. | 03-05-2009 |
20090106707 | Multiple Source-Single Drain Field Effect Semiconductor Device and Circuit - Disclosed are embodiments of a design structure for a variable-delay field effect transistor (FET) having multiple source regions that can be individually and selectively biased to provide an electrical connection to a single drain region. Delay is a function of which of the multiple source regions is/are selectively biased as well as a function of gate resistance and capacitance. Such a variable-delay FET can be incorporated into a phase adjusting circuit, which uses gate propagation delays to selectively phase adjust an input signal. The phase adjusting circuit can be tuned by incorporating non-salicided resistances and additional capacitance at various positions on the gate structure. The phase adjusting circuit can further be modified into a phase adjusting mixer circuit that enables a phase adjusted signal to be combined with an additional signal. | 04-23-2009 |
20090115448 | Design Structure for an Automatic Driver/Transmission Line/Receiver Impedance Matching Circuitry - A design structure for an impedance matcher that automatically matches impedance between a driver and a receiver. The design structure for an impedance matcher includes a phase-locked loop (PLL) circuit that locks onto a data signal provided by the driver. The impedance matcher also includes tunable impedance matching circuitry responsive to one or more voltage-controlled oscillator control signals within the PLL circuit so as to generate an output signal that is impedance matched with the receiver. | 05-07-2009 |
20090134463 | SEMICONDUCTOR STRUCTURE AND SYSTEM FOR FABRICATING AN INTEGRATED CIRCUIT CHIP - A semiconductor structure and a system for fabricating an integrated circuit chip. The semiconductor structure includes: a buried oxide layer on a semiconductor wafer; a thin fin structure on the buried oxide layer, wherein the thin fin structure includes a first hard mask on a semiconductor fin, wherein the semiconductor fin is disposed between the first hard mask and a surface of the buried oxide layer; and a thick mesa structure on the buried oxide layer, and wherein the thick mesa structure includes a semiconductor mesa. The system for fabricating an integrated circuit chip enables: providing a buried oxide layer on and in direct mechanical contact with a semiconductor wafer; and concurrently forming at least one fin-type field effect transistor and at least one thick-body device on the buried oxide layer. | 05-28-2009 |
20090144689 | Structure for a Voltage Detection Circuit in an Integrated Circuit and Method of Generating a Trigger Flag Signal - A design structure for an integrated circuit that includes at least one tunneling device voltage detection circuit for generating a trigger flag signal. The tunneling device voltage detection circuit includes first and second voltage dividers receiving a supply voltage and having corresponding respective first and second internal node output voltages. The first and second voltage dividers are configured so the first output voltage is linear relative to the supply voltage and so that the second output voltage is nonlinear relative to the supply voltage. As the supply voltage ramps up, the profiles of the first and second output voltage cross at a particular voltage. An operational amplifier circuit senses when the first and second output voltages become equal and, in response thereto, outputs a trigger signal that indicates that the supply voltage has reached a certain level. | 06-04-2009 |
20090243733 | DESIGN STRUCTURE FOR TRANSFORMING AN INPUT VOLTAGE TO OBTAIN LINEARITY BETWEEN INPUT AND OUTPUT FUNCTIONS AND SYSTEM AND METHOD THEREOF - A design structure is embodied in a machine readable medium for designing, manufacturing, or testing a design. The design structure includes a first structure for determining a non-linear characteristic of the input voltage to the output frequency response, the first design structure providing a tunneling-based current relationship with the input voltage. Also disclosed is a system and a method of implementing such structure. | 10-01-2009 |
20090267178 | DEVICE STRUCTURES FOR ACTIVE DEVICES FABRICATED USING A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND DESIGN STRUCTURES FOR A RADIOFREQUENCY INTEGRATED CIRCUIT - Device structure for active devices fabricated in a semiconductor-on-insulator (SOI) substrate and design structures for a radiofrequency integrated circuit. The device structure includes a first isolation region in the semiconductor layer that extends from a top surface of a semiconductor layer to a first depth, a second isolation region in the semiconductor layer that extends from the top surface of the semiconductor layer to a second depth greater than the first depth, and a first doped region in the semiconductor layer. The first doped region is disposed vertically between the first isolation region and an insulating layer disposed between the semiconductor layer and a handle wafer of the SOI substrate. The device structure may be included in a design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit. | 10-29-2009 |
20090269903 | METHODS FOR FABRICATING ACTIVE DEVICES ON A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE UTILIZING MULTIPLE DEPTH SHALLOW TRENCH ISOLATIONS - Methods for fabricating a device structure in a semiconductor-on-insulator substrate. The method includes forming a first isolation region in the substrate device layer that extends from a top surface of the device layer to a first depth and forming a second isolation region in the semiconductor layer that extends from the top surface of the semiconductor layer to a second depth greater than the first depth. The method further includes forming a doped region of the device structure in the semiconductor layer that is located vertically between the first isolation region and the insulating layer. | 10-29-2009 |
20090278185 | DEVICE STRUCTURES FOR A MEMORY CELL OF A NON-VOLATILE RANDOM ACCESS MEMORY AND DESIGN STRUCTURES FOR A NON-VOLATILE RANDOM ACCESS MEMORY - Device and design structures for memory cells in a non-volatile random access memory (NVRAM). The device structure includes a semiconductor body in direct contact with the insulating layer, a control gate electrode, and a floating gate electrode in direct contact with the insulating layer. The semiconductor body includes a source, a drain, and a channel between the source and the drain. The floating gate electrode is juxtaposed with the channel of the semiconductor body and is disposed between the control gate electrode and the insulating layer. A first dielectric layer is disposed between the channel of the semiconductor body and the floating gate electrode. A second dielectric layer is disposed between the control gate electrode and the floating gate electrode. | 11-12-2009 |
20090280607 | METHODS OF FABRICATING A DEVICE STRUCTURE FOR USE AS A MEMORY CELL IN A NON-VOLATILE RANDOM ACCESS MEMORY - Methods for fabricating a device structure for use as a memory cell in a non-volatile random access memory. The method includes forming first and second semiconductor bodies on the insulating layer that have a separated, juxtaposed relationship, doping the first semiconductor body to form a source and a drain, and partially removing the second semiconductor body to define a floating gate electrode adjacent to the channel of the first semiconductor body. The method further includes forming a first dielectric layer between the channel of the first semiconductor body and the floating gate electrode, forming a second dielectric layer on a top surface of the floating gate electrode, and forming a control gate electrode on the second dielectric layer that cooperates with the floating gate electrode to control carrier flow in the channel in the first semiconductor body. | 11-12-2009 |
20100019816 | MICRO-PHASE ADJUSTING AND MICRO-PHASE ADJUSTING MIXER CIRCUITS DESIGNED WITH STANDARD FIELD EFFECT TRANSISTOR STRUCTURES - Disclosed herein are embodiments of a programmable phase adjusting circuit, a programmable phase adjusting mixer circuit and design structures for these circuits. These circuits comprise a variable delay device connected between input and output nodes. The device includes multiple FETs with input diffusion regions that are connected to a voltage rail via switches so that they can be selectively biased, gates that are connected in series to the input node so that a periodic input signal can be propagated sequentially through each of the gates and output diffusion regions that are connected in parallel to the output node. A current source is connected between the output node and another voltage rail for biasing the output node when the variable delay device is off. The variable delay device enables a circuit in which small increments of selectable phase adjustments can be made to the periodic input signal as a function of propagation delay. | 01-28-2010 |
20100038754 | Back-End-of-Line Resistive Semiconductor Structures - In one embodiment, a back-end-of-line (BEOL) resistive structure comprises a second metal line embedded in a second dielectric layer and overlying a first metal line embedded in a first dielectric layer. A doped semiconductor spacer or plug laterally abutting sidewalls of the second metal line and vertically abutting a top surface of the first metal line provides a resistive link between the first and second metal lines. In another embodiment, another BEOL resistive structure comprises a first metal line and a second metal line are embedded in a dielectric layer. A doped semiconductor spacer or plug laterally abutting the sidewalls of the first and second metal lines provides a resistive link between the first and second metal lines. | 02-18-2010 |
20100041202 | Methods For Forming Back-End-Of-Line Resistive Semiconductor Structures - In one embodiment, a second metal line embedded in a second dielectric layer overlies a first metal line embedded in a first dielectric layer. A portion of the second dielectric layer overlying the first metal line is recessed employing a photoresist and the second metal line as an etch mask. A doped semiconductor spacer is formed within the recess to provide a resistive link between the first metal line and the second metal line. In another embodiment, a first metal line and a second metal line are embedded in a dielectric layer. An area of the dielectric layer laterally abutting the first and second metal lines is recessed employing a photoresist and the first and second metal lines as an etch mask. A doped semiconductor spacer is formed on sidewalls of the first and second metal lines, providing a resistive link between the first and second metal lines. | 02-18-2010 |
20100096536 | ON DEMAND CIRCUIT FUNCTION EXECUTION EMPLOYING OPTICAL SENSING - Disclosed is a method of executing an electrical function, such as a fusing operation, by activation through a chip embedded photodiode through spectrally selected external light activation, and corresponding structure and circuit. The present invention is based on having incident light with specific intensity/wave length characteristics, in conjunction with additional circuit elements to an integrated circuit, perform the implementation of repairs, i.e., replacing failing circuit elements with redundant ones for yield and/or reliability. Also to perform disconnection of ESD protection device from input pad one the packaged chip is placed in system. No additional pins on the package are necessary. | 04-22-2010 |
20100230732 | FIELD EFFECT TRANSISTOR WITH AIR GAP DIELECTRIC - A field effect transistor (FET) that includes a drain formed in a first plane, a source formed in the first plane, a channel formed in the first plane and between the drain and the source and a gate formed in the first plane. The gate is separated from at least a portion of the body by an air gap. The air gap is also in the first plane. | 09-16-2010 |
20110073985 | Method of Generating Uniformly Aligned Well and Isolation Regions in a Substrate and Resulting Structure - A solution for alleviating variable parasitic bipolar leakages in scaled semiconductor technologies is described herein. Placement variation is eliminated for edges of implants under shallow trench isolation (STI) areas by creating a barrier to shield areas from implantation more precisely than with only a standard photolithographic mask. An annealing process expands the implanted regions such their boundaries align within a predetermined distance from the edge of a trench. The distances are proportionate for each trench and each adjacent isolation region. | 03-31-2011 |
20110161896 | BACK-END-OF-LINE RESISTIVE SEMICONDUCTOR STRUCTURES - In one embodiment, a back-end-of-line (BEOL) resistive structure comprises a second metal line embedded in a second dielectric layer and overlying a first metal line embedded in a first dielectric layer. A doped semiconductor spacer or plug laterally abutting sidewalls of the second metal line and vertically abutting a top surface of the first metal line provides a resistive link between the first and second metal lines. In another embodiment, another BEOL resistive structure comprises a first metal line and a second metal line are embedded in a dielectric layer. A doped semiconductor spacer or plug laterally abutting the sidewalls of the first and second metal lines provides a resistive link between the first and second metal lines. | 06-30-2011 |
20120084741 | STRUCTURE, DESIGN STRUCTURE AND PROCESS FOR INCREASING MAGNITUDE OF DEVICE THRESHOLD VOLTAGE FOR LOW POWER APPLICATIONS - A method of increasing an initial threshold voltage (Vt) of selected devices. The method includes designing devices with desired antenna effects and adjusting an increase in Vt of some devices to specific values. The desired antenna effects produce a desired threshold voltage of the devices. | 04-05-2012 |
20120128033 | THERMAL SENSOR FOR SEMICONDUCTOR CIRCUITS - A system and a method for measuring temperature within an operating circuit use a Wheatstone bridge within a temperature sensing circuit. One of the resistors in the Wheatstone bridge is a thermally sensitive resistive material layer within the operating circuit. The other three resistors are thermally isolated from the operating circuit. Particular configurations of NFET and PFET devices are used to provide enhanced measurement sensitivity within the temperature sensing circuit that includes the Wheatstone bridge. | 05-24-2012 |
20120264275 | FIELD EFFECT TRANSISTOR WITH AIR GAP DIELECTRIC - A field effect transistor (FET) that includes a drain formed in a first plane, a source formed in the first plane, a channel formed in the first plane and between the drain and the source and a gate formed in the first plane. The gate is separated from at least a portion of the body by an air gap. The air gap is also in the first plane. | 10-18-2012 |
20120280356 | UNIFORMLY ALIGNED WELL AND ISOLATION REGIONS IN A SUBSTRATE AND RESULTING STRUCTURE - A solution for alleviating variable parasitic bipolar leakages in scaled semiconductor technologies is described herein. Placement variation is eliminated for edges of implants under shallow trench isolation (STI) areas by creating a barrier to shield areas from implantation more precisely than with only a standard photolithographic mask. An annealing process expands the implanted regions such their boundaries align within a predetermined distance from the edge of a trench. The distances are proportionate for each trench and each adjacent isolation region. | 11-08-2012 |