Patent application number | Description | Published |
20130330932 | HARDMASK MATERIALS - Hardmask films having high hardness and low stress are provided. In some embodiments a film has a stress of between about −600 MPa and 600 MPa and hardness of at least about 12 GPa. In some embodiments, a hardmask film is prepared by depositing multiple sub-layers of doped or undoped silicon carbide using multiple densifying plasma post-treatments in a PECVD process chamber. In some embodiments, a hardmask film includes a high-hardness boron-containing film selected from the group consisting of Si | 12-12-2013 |
20140134827 | CONFORMAL FILM DEPOSITION FOR GAPFILL - A method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate is disclosed. A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited in the one or more gaps over the first dielectric oxide layer via CFD. | 05-15-2014 |
20140170853 | IMAGE REVERSAL WITH AHM GAP FILL FOR MULTIPLE PATTERNING - Methods and apparatuses for multiple patterning using image reversal are provided. The methods may include depositing gap-fill ashable hardmasks using a deposition-etch-ash method to fill gaps in a pattern of a semiconductor substrate and eliminating spacer etching steps using a single-etch planarization method. Such methods may be performed for double patterning, multiple patterning, and two dimensional patterning techniques in semiconductor fabrication. | 06-19-2014 |
20140302689 | METHODS AND APPARATUS FOR DIELECTRIC DEPOSITION - Methods for depositing flowable dielectric films are provided. In some embodiments, the methods involve introducing a silicon-containing precursor to a deposition chamber wherein the precursor is characterized by having a partial pressure:vapor pressure ratio between 0.01 and 1. In some embodiments, the methods involve depositing a high density plasma dielectric film on a flowable dielectric film. The high density plasma dielectric film may fill a gap on a substrate. Also provided are apparatuses for performing the methods. | 10-09-2014 |
Patent application number | Description | Published |
20150044882 | FLOWABLE OXIDE FILM WITH TUNABLE WET ETCH RATE - Provided herein are integration-compatible dielectric films and methods of depositing and modifying them. According to various embodiments, the methods can include deposition of flowable dielectric films targeting specific film properties and/or modification of those properties with an integration-compatible treatment process. In certain embodiments, methods of depositing and modifying flowable dielectric films having tunable wet etch rates and other properties are provided. Wet etch rates can be tuned during integration through am integration-compatible treatment process. Examples of treatment processes include plasma exposure and ultraviolet radiation exposure. | 02-12-2015 |
20150118848 | ATOMIC LAYER REMOVAL PROCESS WITH HIGHER ETCH AMOUNT - Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the reaction is partially “reset.” A higher overall etch rate is achieved by a multiple exposure with pump down ALR process. | 04-30-2015 |
20150206719 | PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION - Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction. | 07-23-2015 |
20150259791 | METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SIN FILM - Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor. | 09-17-2015 |
Patent application number | Description | Published |
20150118862 | TREATMENT FOR FLOWABLE DIELECTRIC DEPOSITION ON SUBSTRATE SURFACES - Provided herein are methods and apparatus for improved flowable dielectric deposition on substrate surfaces. The methods involve improving nucleation and wetting on the substrate surface without forming a thick high wet etch rate interface layer. According to various embodiments, the methods may include single or multi-stage remote plasma treatments of a deposition surface. In some embodiments, a treatment may include exposure to both a reducing chemistry and a hydrogen-containing oxidizing chemistry. Apparatus for performing the methods are also provided. | 04-30-2015 |
20150118863 | METHODS AND APPARATUS FOR FORMING FLOWABLE DIELECTRIC FILMS HAVING LOW POROSITY - Provided herein are methods and apparatus for forming flowable dielectric films having low porosity. In some embodiments, the methods involve plasma post-treatments of flowable dielectric films. The treatments can involve exposing a flowable film to a plasma while the film is still in a flowable, reactive state but after deposition of new material has ceased. | 04-30-2015 |
20160056071 | FLOWABLE DIELECTRIC FOR SELECTIVE ULTRA LOW-K PORE SEALING - Implementations of the methods and apparatus disclosed herein relate to pore sealing of porous dielectric films using flowable dielectric material. The methods involve exposing a substrate having an exposed porous dielectric film thereon to a vapor phase dielectric precursor under conditions such that a flowable dielectric material selectively deposits in the pores of the porous dielectric material. The pores can be filled with the deposited flowable dielectric material without depositing a continuous film on any exposed metal surface. | 02-25-2016 |
20160071953 | SACRIFICIAL PRE-METAL DIELECTRIC FOR SELF-ALIGNED CONTACT SCHEME - Various embodiments herein relate to formation of contact etch stop layers in the context of forming gates and contacts. In certain embodiments, a novel process flow is used, which may involve the deposition and removal of a sacrificial pre-metal dielectric material before a particular contact etch stop layer is formed. An auxiliary contact etch stop layer may be used in addition to a primary etch stop layer that is deposited previously. In certain cases the contact etch stop layer is a metal-containing material such as a nitride or an oxide. The contact etch stop layer may be deposited through a cyclic vapor deposition in some embodiments. The process flows disclosed herein provide improved protection against over-etching gate stacks, thereby minimizing gate-to-contact leakage. Further, the disclosed process flows result in wider flexibility in terms of materials and deposition conditions used for forming various dielectric materials, thereby minimizing parasitic capacitance. | 03-10-2016 |