Patent application number | Description | Published |
20110019351 | BEZEL PACKAGING FOR SEALED GLASS ASSEMBLIES AND A GLASS ASSEMBLY THEREFOR - Methods and assemblies related to frame or bezel packaging of a sealed glass assembly, such as a fit-sealed OLED device, such as an OLED display panel. The frame or bezel packaging may have one or more of (a) rounded or chamfered corners, (a) a cover, (b) a reinforced lead edge, (c) openings or cutouts in the back panel to conserve material and lighten the bezel, and (d) a shock absorbent intermediate layer of low modulus of elasticity material applied between the sealed glass assembly and the back and/or sides of the frame or bezel. The frame or bezel design may include a gap between the sealed glass assembly and the back panel of the bezel. The gap may be filled at least in part with low modulus of elasticity backing material. The glass package may have one or more of (a) rounded or chamfered corners, (b) rounded or chamfered edges, (c) a low modulus of elasticity material applied around its periphery or portions of its periphery, such as on the corners only, (d) a shortened lead end, and (e) a thickened lead end. | 01-27-2011 |
20120009854 | EDGE FINISHING APPARATUS - An edge finishing apparatus includes a surface, a fluid delivery device configured to deliver at least one magnetorheological polishing fluid (MPF) ribbon to the at least one well, at least one magnet placed adjacent to the surface to selectively apply a magnetic field in a vicinity of the surface, and at least one holder placed in opposing relation to the surface, the at least one holder being configured to support at least one article such that an edge of the at least one article can be selectively immersed in the MPF ribbon delivered to the at least one well. | 01-12-2012 |
20150210588 | BENDABLE GLASS STACK ASSEMBLIES, ARTICLES AND METHODS OF MAKING THE SAME - A glass element having a thickness from 25 μm to 125 μm, a first primary surface, a second primary surface, and a compressive stress region extending from the first primary surface to a first depth, the region defined by a compressive stress σI of at least about 100 MPa at the first primary surface. Further, the glass element has a stress profile such that when the glass element is bent to a target bend radius of from 1 mm to 20 mm, with the center of curvature on the side of the second primary surface so as to induce a bending stress σB at the first primary surface, σI+σB<0. Still further, the glass element has a puncture resistance of ≧1.5 kgf when the first primary surface of the glass element is loaded with a tungsten carbide ball having a diameter of 1.5 mm. | 07-30-2015 |
20150210589 | BENDABLE GLASS STACK ASSEMBLIES, ARTICLES AND METHODS OF MAKING THE SAME - A glass element having a thickness from 25 μm to 125 μm, a first primary surface, a second primary surface, and a compressive stress region extending from the first primary surface to a first depth, the region defined by a compressive stress σI of at least about 100 MPa at the first primary surface. Further, the glass element has a stress profile such that it does not fail when it is subject to 200,000 cycles of bending to a target bend radius of from 1 mm to 20 mm, by the parallel plate method. Still further, the glass element has a puncture resistance of greater than about 1.5 kgf when the first primary surface of the glass element is loaded with a tungsten carbide ball having a diameter of 1.5 mm. | 07-30-2015 |
20150210590 | BENDABLE GLASS STACK ASSEMBLIES, ARTICLES AND METHODS OF MAKING THE SAME - A glass element having a thickness from 25 μm to 125 μm, a first primary surface, a second primary surface, and a compressive stress region extending from the first primary surface to a first depth, the region defined by a compressive stress σI of at least about 100 MPa at the first primary surface. Further, the glass element has a stress profile such that it does not fail when it is held at a bend radius from about 1 mm to about 20 mm for at least 60 minutes at about 25° C. and about 50% relative humidity. Still further, the glass element has a puncture resistance of greater than about 1.5 kgf when the first primary surface of the glass element is loaded with a tungsten carbide ball having a diameter of 1.5 mm. | 07-30-2015 |
20150306726 | EDGE FINISHING APPARATUS - An edge finishing apparatus includes a surface, a fluid delivery device configured to deliver at least one magnetorheological polishing fluid (MPF) ribbon to the at least one well, at least one magnet placed adjacent to the surface to selectively apply a magnetic field in a vicinity of the surface, and at least one holder placed in opposing relation to the surface, the at least one holder being configured to support at least one article such that an edge of the at least one article can be selectively immersed in the MPF ribbon delivered to the at least one well. | 10-29-2015 |
Patent application number | Description | Published |
20120329782 | AZEPINE INHIBITORS OF JANUS KINASES - The present invention provides compounds that modulate the activity of Janus kinases and are useful in the treatment of diseases related to activity of Janus kinases including, for example, immune-related diseases, skin disorders, myeloid proliferative disorders, cancer, and other diseases. | 12-27-2012 |
20130137681 | HETEROARYL SUBSTITUTED PYRROLO[2,3-b]PYRIDINES AND PYRROLO[2,3-b]PYRIMIDINES AS JANUS KINASE INHIBITORS - The present invention provides heteroaryl substituted pyrrolo[2,3-b]pyridines and heteroaryl substituted pyrrolo[2,3-b]pyrimidines that modulate the activity of Janus kinases and are useful in the treatment of diseases related to activity of Janus kinases including, for example, immune-related diseases, skin disorders, myeloid proliferative disorders, cancer, and other diseases. | 05-30-2013 |
20140005210 | Heteroaryl Substituted Pyrrolo[2,3-B] Pyridines And Pyrrolo[2,3-B] Pyrimidines As Janus Kinase Inhibitors | 01-02-2014 |
20140018374 | Heteroaryl Substituted Pyrrolo[2,3-B]Pyridines And Pyrrolo[2,3-B]Pyrimidines As Janus Kinase Inhibitors - The present invention provides heteroaryl substituted pyrrolo[2,3-b]pyridines and heteroaryl substituted pyrrolo[2,3-b]pyrimidines that modulate the activity of Janus kinases and are useful in the treatment of diseases related to activity of Janus kinases including, for example, immune-related diseases, skin disorders, myeloid proliferative disorders, cancer, and other diseases. | 01-16-2014 |
20140031344 | AZEPINE INHIBITORS OF JANUS KINASES - The present invention provides compounds that modulate the activity of Janus kinases and are useful in the treatment of diseases related to activity of Janus kinases including, for example, immune-related diseases, skin disorders, myeloid proliferative disorders, cancer, and other diseases. | 01-30-2014 |
20150238492 | Heteroaryl Substituted Pyrrolo[2,3-B] Pyridines And Pyrrolo[2,3-B] Pyrimidines As Janus Kinase Inhibitors - The present invention provides heteroaryl substituted pyrrolo[2,3-b]pyridines and heteroaryl substituted pyrrolo[2,3-b]pyrimidines that modulate the activity of Janus kinases and are useful in the treatment of diseases related to activity of Janus kinases including, for example, immune-related diseases, skin disorders, myeloid proliferative disorders, cancer, and other diseases. | 08-27-2015 |
20150246046 | JAK1 INHIBITORS FOR THE TREATMENT OF MYELODYSPLASTIC SYNDROMES - This invention relates to JAK1 selective inhibitors, particularly pyrrolo[2,3-d]pyrimidine and pyrrolo[2,3-b]pyridine derivatives, and their use in treating myelodysplastic syndromes (MDS). | 09-03-2015 |
Patent application number | Description | Published |
20100022522 | HETEROARYL SUBSTITUTED PYRROLO[2,3-b]PYRIDINES AND PYRROLO[2,3-b]PYRIMIDINES AS JANUS KINASE INHIBITORS - The present invention provides heteroaryl substituted pyrrolo[2,3-b]pyridines and heteroaryl substituted pyrrolo[2,3-b]pyrimidines that modulate the activity of Janus kinases and are useful in the treatment of diseases related to activity of Janus kinases including, for example, immune-related diseases, skin disorders, myeloid proliferative disorders, cancer, and other diseases. | 01-28-2010 |
20110223210 | HETEROARYL SUBSTITUTED PYRROLO[2,3-b]PYRIDINES AND PYRROLO[2,3-b]PYRIMIDINES AS JANUS KINASE INHIBITORS - The present invention provides heteroaryl substituted pyrrolo[2,3-b]pyridines and heteroaryl substituted pyrrolo[2,3-b]pyrimidines that modulate the activity of Janus kinases and are useful in the treatment of diseases related to activity of Janus kinases including, for example, immune-related diseases, skin disorders, myeloid proliferative disorders, cancer, and other diseases. | 09-15-2011 |
20110224157 | HETEROARYL SUBSTITUTED PYRROLO[2,3-b]PYRIDINES AND PYRROLO[2,3-b]PYRIMIDINES AS JANUS KINASE INHIBITORS - The present invention provides heteroaryl substituted pyrrolo[2,3-b]pyridines and heteroaryl substituted pyrrolo[2,3-b]pyrimidines that modulate the activity of Janus kinases and are useful in the treatment of diseases related to activity of Janus kinases including, for example, immune-related diseases, skin disorders, myeloid proliferative disorders, cancer, and other diseases. | 09-15-2011 |
20120263676 | COMPOSITIONS, METHODS AND KITS RELATING TO HER-2 CLEAVAGE - The present invention relates to compositions, methods and kits based on the ADAM-mediated cleavage of Her-2. The present invention also relates to treatments for cancer, and in particular, breast cancer, by modulating the ADAM-mediated cleavage of Her-2. Further, the invention relates to compositions, methods and kits based on the surprising synergistic effect between inhibition of Her-2 cleavage by an ADAM and certain cytostatic (e.g., Herceptin) and cytotoxic (e.g., Taxol) compounds in, among other things, inhibiting tumor cell proliferation and inducing cell death. Additionally, the invention relates to novel variants of ADAM15, designated ADAM15 variant 1 and ADAM15 variant 2, now identified and isolated. | 10-18-2012 |
Patent application number | Description | Published |
20150043260 | POWER RECTIFIER USING TUNNELING FIELD EFFECT TRANSISTOR - A power rectifier includes a stage having a first Tunneling Field-Effect Transistor (“TFET”) having a source, a gate, and a drain, a second TFET having a source, a gate, and a drain, a third TFET having a source, a gate, and a drain, and a fourth TFET having a source, a gate, and a drain such that the source of the first TFET, the source of the second TFET, the gate of the third TFET, and the gate of the fourth TFET are connected, the gate of the first TFET, the gate of the second TFET, the source of the third TFET and the source of the fourth TFET are connected, the drain of the first TFET and the drain of the third TFET are connected, and the drain of the second TFET and the drain of the fourth TFET are connected. Alternative embodiments are also disclosed. | 02-12-2015 |