Patent application number | Description | Published |
20110284971 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - There are provided a semiconductor device in which the threshold voltage of a p-channel field effect transistor is reliably controlled to allow a desired characteristic to be obtained, and a manufacturing method thereof. As a heat treatment performed at a temperature of about 700 to 900° C. proceeds, in an element formation region, aluminum (Al) in an aluminum (Al) film is diffused into a hafnium oxynitride (HfON) film, and thereby added as an element to the hafnium oxynitride (HfON) film. In addition, aluminum (Al) and titanium (Ti) in a hard mask formed of a titanium aluminum nitride (TiAlN) film are diffused into the hafnium oxynitride (HfON) film, and thereby added as elements to the hafnium oxynitride (HfON) film. | 11-24-2011 |
20120045876 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - There is provided a technology capable of preventing the increase in threshold voltages of n channel type MISFETs and p channel type MISFETs in a semiconductor device including CMISFETs having high dielectric constant gate insulation films and metal gate electrodes. When a rare earth element or aluminum is introduced into a Hf-containing insulation film which is a high dielectric constant gate insulation film for the purpose of adjusting the threshold value of the CMISFET, a threshold adjustment layer including a lanthanum film scarcely containing oxygen, and a threshold adjustment layer including an aluminum film scarcely containing oxygen are formed over the Hf-containing insulation film in an nMIS formation region and a pMIS formation region, respectively. This prevents oxygen from being diffused from the threshold adjustment layers into the Hf-containing insulation film and the main surface of a semiconductor substrate. | 02-23-2012 |
20120056268 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - There is provided a technology capable of achieving, in a semiconductor device having a MISFET using an insulating film containing hafnium as a gate insulating film, an improvement in the reliability of a MISFET. In the present invention, the gate insulating film of an n-channel core transistor is provided with a structure different from that of the gate insulating film of a p-channel core transistor. Specifically, in the n-channel core transistor, as the gate insulating film thereof, a laminate film of a silicon oxide film and a HfZrSiON film is used. On the other hand, in the p-channel core transistor, as the gate insulating film thereof, a laminate film of a silicon oxide film and a HfSiON film is used. | 03-08-2012 |
20120208346 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A polysilazane film is formed over the main surface of a semiconductor substrate in such a manner that the upper surface level of the polysilazane film buried in a trench of 0.2 μm or less in width becomes higher than that of a pad insulating film and the upper surface level of the polysilazane film buried in a trench of 1.0 μm or more in width becomes lower than that of the pad insulating film. Then, heat treatment is conducted at 300° C. or more to convert the polysilazane film into a first buried film made of silicon oxide (SiO | 08-16-2012 |
20150060991 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The performance of a semiconductor device having a memory element is improved. An insulating film, which is a gate insulating film for a memory element, is formed on a semiconductor substrate, and a gate electrode for the memory element is formed on the insulating film. The insulating film has a first insulating film, a second insulating film thereon, and a third insulating film thereon. The second insulating film is a high-dielectric constant insulator film having a charge accumulating function and contains hafnium, silicon, and oxygen. Each of the first insulating film and the third insulating film has a band gap larger than the band gap of the second insulating film. | 03-05-2015 |
Patent application number | Description | Published |
20080266231 | Digital-to-analog converter circuit including adder drive circuit and display - A digital-to-analog conversion circuit includes a gradation voltage generation circuit, a most-significant-bits decoder circuit, a least-significant-bits decoder circuit and a calculation circuit. The gradation voltage generation circuit generates multiple main voltages corresponding to most significant bits of the inputted data, and multiple sub voltages corresponding to least significant bits of the inputted data. The most-significant-bits decoder circuit selects one of the main voltages in accordance with the most significant bits, and the least-significant-bits decoder circuit selects one of the sub voltages in accordance with the least significant bits. The calculator circuit performs calculation processing by use of a first main voltage selected by the most-significant-bits decoder circuit, a first sub voltage selected by the least-significant-bits decoder circuit, and a reference voltage. | 10-30-2008 |
20090153533 | Apparatus and method for driving liquid crystal display panel - A liquid crystal display device is provided with: a liquid crystal display panel and a data driver IC driving the liquid crystal display panel. The liquid crystal display panel includes first and second gate lines, a data line and a pixel including a first sub-pixel connected to the data line and the first gate line and a second sub-pixel connected to the data line and the second gate line. The data driver IC includes: a gamma correction circuitry generating first gamma-corrected data by performing gamma correction on externally-received image data in accordance with a first gamma curve and generating second gamma-corrected data by performing gamma correction on the image data in accordance with a second gamma curve; and a drive circuitry driving the data line in response to the first gamma-corrected data in a first horizontal period and driving the data line in response to the second gamma-corrected data in a second horizontal period following the first horizontal period. | 06-18-2009 |
20090153594 | Apparatus and method for driving liquid crystal display panel - A liquid crystal display device is provided with a liquid crystal display panel, and a data driver IC that drives the liquid crystal display panel. The liquid crystal display panel is provided with a gate line, first and second data lines, and a pixel that includes a first sub-pixel connected to the gate line and the first data line and a second sub-pixel connected to the gate line and the second data line. The data driver IC is provided with a gamma correction circuitry and a drive circuitry. The gamma correction circuitry generates first gamma-corrected data by performing gamma correction on externally received image data in accordance with a first gamma curve, and generates second gamma-corrected data by performing gamma correction on the image data in accordance with a second gamma curve. The drive circuitry drives the first data line in response to the first gamma-corrected data and drives the second data line in response to the second gamma-corrected data. | 06-18-2009 |
20090309869 | Driving circuit and display - A liquid crystal display in which it is possible to reduce the EMI noise ascribable to high harmonic contents in a charging/discharging current is disclosed. The liquid crystal display includes a source driver | 12-17-2009 |
Patent application number | Description | Published |
20090193139 | COMMUNICATION APPARATUS, COMMUNICATION SYSTEM, COMMUNICATION METHOD AND PROGRAM - A communication apparatus includes a physical layer to perform signal transmission/reception with another communication end, and a data transfer section (DTL) to connect an upper level user application and the physical layer. The DTL includes a profile ID addition section to add a profile ID indicating the type of a data file to a transmission data file based on an instruction from the user application and continuously transmits the data file with the profile ID through the physical layer. | 07-30-2009 |
20090253459 | MOBILE COMMUNICATION TERMINAL AND METHOD OF CONTROLLING TRANSMISSION CHARACTERISTIC THEREOF - A mobile communication terminal includes: a signal transmission section having a predetermined default value for a transmission characteristic; an antenna to be used at least by the signal transmission section; a separate circuit section sharing ground with the signal transmission section and the antenna, and being different from the signal transmission section; a monitoring section monitoring a change in a use state of the terminal related to the separate circuit section; and when the signal transmission section transmits a signal using the antenna, if the monitoring section detects a change in the use state of the terminal, a transmission-characteristic adjusting section adjusting a transmission characteristic of the signal transmission section from the default value to a characteristic optimized for the use state. | 10-08-2009 |
20090267922 | CONTACT-SENSING DEVICE, MOBILE INFORMATION TERMINAL, AND CAPACITANCE CALIBRATION PROGRAM AND METHOD - A contact-sensing device includes a capacitance contact-sensing unit including contact-sensing areas configured to at least detect contact with an external object; a calibration-value setting unit configured to set a calibration value to be used to calibrate capacitances of the contact-sensing areas on the basis of capacitances of the contact-sensing areas excluding the contact-sensing area detected by the contact-sensing unit to be in contact with the external object; a calibration determining unit configured to determine whether or not calibration of the capacitances of the contact-sensing areas is to be carried out on the basis of capacitances of the contact-sensing areas excluding the contact-sensing area detected by the contact-sensing unit to be in contact with the external object; and a capacitance calibrating unit configured to calibrate capacitances of all of the contact-sensing areas using the calibration value set by the calibration-value setting unit when the calibration determining unit determines that calibration is to be carried out. | 10-29-2009 |
Patent application number | Description | Published |
20100110243 | SOLID STATE IMAGING DEVICE - A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell ( | 05-06-2010 |
20100110244 | SOLID STATE IMAGING DEVICE - A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell ( | 05-06-2010 |
20100308386 | SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE - Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed. | 12-09-2010 |
20110221021 | Solid state image pickup device and method of producing solid state image pickup device - Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed. | 09-15-2011 |
20120286388 | SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE - Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed. | 11-15-2012 |
20130171760 | SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING SOLID STATE IMAGE PICKUP DEVICE - Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed. | 07-04-2013 |
20130265471 | SOLID STATE IMAGING DEVICE - A solid-state imaging device is capable of simplifying the pixel structure to reduce the pixel size and capable of suppressing the variation in the characteristics between the pixels when a plurality of output systems is provided. A unit cell ( | 10-10-2013 |