Patent application number | Description | Published |
20130075779 | LIGHT EMITTING DIODE WITH MULTIPLE TRANSPARENT CONDUCTIVE LAYERS AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes a first-type semiconductor layer, an active layer, a second-type semiconductor layer and a transparent, electrically conductive layer formed in sequence. The transparent, electrically conductive layer includes a first transparent, electrically conductive layer on the second-type semiconductor layer and a second transparent, electrically conductive layer on the first transparent, electrically conductive layer. Both the first and second transparent, electrically conductive layers are made of indium tin oxide, while the first transparent, electrically conductive layer has a smaller thickness. During formation of the transparent, electrically conductive layer, a mass flow of introduced oxygen gas to the first transparent conductive layer is lower than that to the second transparent conductive layer. | 03-28-2013 |
20130099254 | LIGHT EMITTING DIODE WITH CHAMFERED TOP PERIPHERAL EDGE - A light emitting diode includes a substrate and a light emitting structure. The light emitting structure includes a light outputting surface away from the substrate and a plurality of sidewalls adjoining the light outputting surface. A top peripheral edge interconnecting the light outputting surface and the sidewalls of the light emitting structure is a rounded top peripheral edge or a beveled top peripheral edge. A top surface of the substrate surrounding the light emitting structure is exposed to air and formed with micro-structures. | 04-25-2013 |
20130175498 | LIGHT EMITTING DIODE - A light emitting diode and a light emitting diode (LED) manufacturing method are disclosed. The LED comprises a substrate; a first n-type GaN layer; a second n-type GaN layer; an active layer; and a p-type GaN layer formed on the substrate in sequence; the second n-type GaN layers has a bottom surface interfacing with the first n-type GaN layer, a rim of the bottom surface has a roughened exposed portion, and Ga-N bonds on the bottom surface has an N-face polarity. | 07-11-2013 |
20130270595 | LIGHT EMITTING DIODE DIE AND LIGHT EMITTING DIODE PACKAGE INCORPORATING THE SAME - An LED die comprises a substrate and an epitaxial layer formed thereon. The epitaxial layer comprises a first n-type semiconductor layer, an active layer and a p-type semiconductor layer grown on the substrate in sequence. The LED die defines a receiving recess formed in a center of a top face of the p-type semiconductor layer. The receiving recess extends through the p-type semiconductor layer, the active layer and into the n-type semiconductor layer along a top-to-bottom direction of the epitaxial layer. A pair of p-pads are located at two opposite sides of the p-type semiconductor layer, respectively. A first n-pad is received in the receiving recess and located on the n-type layer. | 10-17-2013 |
20130280835 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE CHIP - A method for manufacturing a light emitting diode includes providing an epitaxial wafer having a substrate and an epitaxial layer allocated on the substrate. The epitaxial layer comprises a first semiconductor layer, an active layer, a second semiconductor layer sequentially allocated, and at least one blind hole penetrating the second semiconductor layer, the active layer and inside the first semiconductor layer; then a first electrode is formed on the first semiconductor layer inside the at least one blind hole and a second electrode is formed on the second semiconductor layer; thereafter a first supporting layer is allocated on the first electrode and a second supporting layer is allocated on the second electrode. | 10-24-2013 |
20130309795 | METHOD FOR MANUFACTURING LED CHIP WITH INCLINED SIDE SURFACE - A method for manufacturing an LED chip is disclosed wherein a substrate is provided. A first semi-conductor layer is formed on the substrate. A photoresist layer with an inverted truncated cone shape and a blocking layer with an inclined inner surface facing and surrounding the photoresist layer are formed on the first semi-conductor layer. The photoresist layer is removed and an epitaxial region surrounded by the blocking layer is defined. A lighting structure is formed inside the epitaxial region. The blocking layer is then removed and the first semi-conductor layer is exposed. Electrodes are formed and respectively electrically connected to the first semi-conductor layer and the lighting structure. | 11-21-2013 |
20140131725 | LIGHT EMITTING DIODE EPITAXY STRUCTURE - A light emitting diode (LED) epitaxy structure includes an N-type semiconductor layer; an active layer arranged on the N-type semiconductor layer, and a P-type semiconductor layer arranged on the active layer. A horizontal cross-sectional area defined by the active layer is a parallelogram, and none of the internal angles of the parallelogram is a right angle. | 05-15-2014 |
20140138615 | LIGHT EMITTING DIODE - An LED includes a base and an LED die grown on the base. The LED die includes two spaced electrodes and two exposed semiconductor layers. The two electrodes are respectively formed on top surfaces of the two semiconductor layers. At least one of the electrodes extends downwardly from the top surface of the corresponding semiconductor layer along a lateral edge of the LED die to electrically connect an exterior electrode via transparent conducting resin. | 05-22-2014 |