Tsuyoshi Ota
Tsuyoshi Ota, Ichiharashi JP
Patent application number | Description | Published |
---|---|---|
20090215973 | PROPYLENE POLYMER AND COMPOSITION CONTAINING THE SAME, MOLDED OBJECT AND LAMINATE COMPRISING THESE, AND PROCESSES FOR PRODUCING PROPYLENE POLYMER AND COMPOSITION CONTAINING THE SAME - A propylenic polymer according to the present invention or a composition thereof have an excellent melt flowability and contains a less amount of stickiness-causing components, and also has a low modulus and is pliable, and is capable of providing a transparent molded article, thus being useful as a substitute for a pliable vinyl chloride resin. In addition, a molded article made therefrom exhibits an excellent heat seal performance at a low temperature, and is excellent in terms of transparency and rigidity. Specifically, it has an isotactic pentad fraction (mmmm), which indicates a stereoregularity, of 30 to 80%, a molecular weight distribution (Mw/Mn) of 3.5 or less and an intrinsic viscosity [η] of 0.8 to 5 dl/g. | 08-27-2009 |
Tsuyoshi Ota, Ichihara-Shi JP
Patent application number | Description | Published |
---|---|---|
20120305982 | OPTICAL SEMICONDUCTOR SEALING MATERIAL - The present invention provides an optical semiconductor sealing material comprising a radically polymerized polymer of a methacrylate ester having an alicyclic hydrocarbon group containing 7 or more carbon atoms, e.g. an adamantyl group, a norbornyl group, or a dicyclopentanyl group; and an optical semiconductor sealing material comprising a radically polymerized polymer of 50 to 97 mass % of the methacrylate ester and 3 to 50 mass % of acrylate ester having a hydroxyl group. The optical semiconductor sealing material of the present invention is highly transparent and stable to UV light and thus does not undergo yellowing. In addition, the material exhibits excellent compatibility between heat resistance and refractive index, does not undergo deformation or cracking during heating processes such as reflow soldering, and shows high processability. The material can be preferably used as a sealing material for light-emitting elements and light-receiving elements of optical semiconductor devices (semiconductor light-emitting devices). | 12-06-2012 |
Tsuyoshi Ota, Hyogo-Ken JP
Patent application number | Description | Published |
---|---|---|
20130248995 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device includes a first semiconductor layer of a first conductivity type, a base layer of a second conductivity type placed above the first semiconductor layer, a second semiconductor layer of the first conductivity type placed above the base layer, multiple gate electrodes having upper end is positioned above the upper surface of the base layer, a lower end positioned below the bottom of the base layer, and contacting the first semiconductor layer, the second semiconductor layer, and the base layer through a gate insulating film, insulating component arranged above the gate electrode in which the upper surface is positioned below the upper surface of the second semiconductor layer, and a conductive layer covering the second semiconductor layer from the upper end to the bottom end. | 09-26-2013 |
20130248998 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes, a drain, source, base and drift regions, a gate electrode, a gate insulating film, a first semiconductor region, a drain electrode, and a source electrode. The drain region has a first portion, and a second portion having a surface extending in a first direction which is vertical to a main surface of the first portion. The source region extends in a second direction which is parallel to the second portion, and is provided to be spaced from the drain region. The gate electrode extends in the first direction and a third direction which is vertical to the first direction and the second direction, and passes through the base region in the third direction. The first semiconductor region is provided between the gate insulating film and the drain region, and has a lower impurity concentration than the drift region. | 09-26-2013 |
20140035030 | SEMICONDUCTOR DEVICE - According to one embodiment, in a semiconductor device, a semiconductor laminated body includes a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type provided on the first semiconductor region and having a higher concentration of impurities than that of the first semiconductor region. A third semiconductor region includes a side surface and a lower end, the side surface and the lower end are surrounded by the semiconductor laminated body. A fourth semiconductor region of a second conductivity type is provided between the semiconductor laminated body and the third semiconductor region. A fifth semiconductor region of the first conductivity type is in contact with an outside surface of the semiconductor laminated body opposite to an inside surface of the semiconductor laminated body, the inside surface is in contact with the fourth semiconductor region. | 02-06-2014 |
Tsuyoshi Ota, Sodegaura-Shi JP
Patent application number | Description | Published |
---|---|---|
20130295464 | COMPOSITE MATERIAL OF ALKALINE METAL SULFIDE AND CONDUCTING AGENT - A composite material including a conducting material and an alkali metal sulfide formed integrally on the surface of the conducting material. | 11-07-2013 |
20140302382 | SOLID ELECTROLYTE - A solid electrolyte including an alkali metal element, phosphorous, sulfur and halogen as constituent components. | 10-09-2014 |
20150214575 | GLASS COMPRISING SOLID ELECTROLYTE PARTICLES AND LITHIUM BATTERY - Glass includes an aggregate of solid electrolyte particles including Li, P, and S, wherein when a Raman spectrum of the glass is repeatedly measured and a peak at 330 to 450 cm | 07-30-2015 |
20150221978 | ALL-SOLID-STATE LITHIUM ION BATTERY AND POSITIVE ELECTRODE MIXTURE - A positive electrode mixture including | 08-06-2015 |
Tsuyoshi Ota, Hyogo JP
Patent application number | Description | Published |
---|---|---|
20150035111 | SEMICONDUCTOR DEVICE - A semiconductor device includes first and second electrodes. First semiconductor regions of a first conductivity type are positioned between the first electrode and the second electrode and contact the first electrode. These semiconductor regions are arranged along a first direction. A second semiconductor region of the first conductivity type also contacts the first electrode and is disposed around the plurality of first semiconductor regions. The second semiconductor region has a dopant concentration that is higher than the first semiconductor regions. A semiconductor layer of a second conductivity type has portions that are between the first semiconductor regions and the second semiconductor region. These portions are in Schottky contact with the first electrode. | 02-05-2015 |
20150287840 | SEMICONDUCTOR DEVICE - A semiconductor device includes first and second electrodes. First semiconductor regions of a first conductivity type are positioned between the first electrode and the second electrode and contact the first electrode. These semiconductor regions are arranged along a first direction. A second semiconductor region of the first conductivity type also contacts the first electrode and is disposed around the plurality of first semiconductor regions. The second semiconductor region has a dopant concentration that is higher than the first semiconductor regions. A semiconductor layer of a second conductivity type has portions that are between the first semiconductor regions and the second semiconductor region. These portions are in Schottky contact with the first electrode. | 10-08-2015 |
Tsuyoshi Ota, Ibo Hyogo JP
Patent application number | Description | Published |
---|---|---|
20150372153 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first electrode, a second electrode, a first semiconductor region that is formed between the first electrode and the second electrode and is in contact with the first electrode, a second semiconductor region that is formed between the first semiconductor region and the second electrode, a contact region that is formed between the second semiconductor region and the second electrode and is in contact with the second semiconductor region and the second electrode, a plurality of third semiconductor regions that are formed between the second electrode and the first semiconductor region and are in contact with the second electrode, and a wiring that is in contact with the second electrode, a portion of the wiring bonded to the second electrode being positioned above the third semiconductor region and not positioned above the contact region. | 12-24-2015 |