Patent application number | Description | Published |
20080302926 | DISPLAY DEVICE AND ELEVATOR SUPPORT STRUCTURE THEREOF - A display comprises a display unit, and an elevator support structure, wherein the elevator support structure comprises a base, a first connecting element, a second connecting element, and a middle hinge assembly. The first connecting element is pivotally connected to the display unit, wherein the first connecting element rotates relative to the display unit around a first axis. The second connecting element is connected to the base, wherein the second connecting element rotates relative to the base around a second axis. The middle hinge assembly is pivotally connected to the first connecting element and the second connecting element, wherein the first connecting element rotates relative to the middle hinge assembly around a third axis, the second connecting element rotates relative to the middle hinge assembly around a fourth axis. The first, second, third and fourth axes are perpendicular to the display area. | 12-11-2008 |
20090095857 | DISPLAY SUPPORT - A display support includes a sliding module and a base module detachably connected to each other. The sliding module includes a first integral-formed frame and a second integral-formed frame movably disposed therein. When using the display support, the sliding module is joined in a receiving portion of the base module. | 04-16-2009 |
20110297801 | DISPLAY SUPPORT - A display support includes a sliding module and a base module detachably connected to each other. The sliding module includes a first integral-formed frame and a second integral-formed frame movably disposed therein. When using the display support, the sliding module is joined in a receiving portion of the base module. | 12-08-2011 |
Patent application number | Description | Published |
20100266466 | REACTOR WITH SILICIDE-COATED METAL SURFACES - In an embodiment, a reactor includes a section, wherein at least a portion of the section includes a base layer, wherein the base layer has a first composition that contains a silicide-forming metal element; and a silicide coating layer, wherein the silicide coating layer is formed by a process of exposing, at a first temperature above 600 degrees Celsius and a sufficient low pressure, the base layer having a sufficient amount of the silicide-forming metal element to a sufficient amount of a silicon source gas having a sufficient amount of silicon element, wherein the silicon source gas is capable of decomposing to produce the sufficient amount of silicon element at a second temperature below 1000 degrees Celsius; reacting the sufficient amount of the silicide-forming metal element with the sufficient amount of silicon element, and forming the silicide coating layer. | 10-21-2010 |
20100266762 | PROCESSES AND AN APPARATUS FOR MANUFACTURING HIGH PURITY POLYSILICON - In one embodiment, a method includes feeding at least one silicon source gas and polysilicon silicon seeds into a reaction zone; maintaining the at least one silicon source gas at a sufficient temperature and residence time within the reaction zone so that a reaction equilibrium of a thermal decomposition of the at least one silicon source gas is substantially reached within the reaction zone to produce an elemental silicon; wherein the decomposition of the at least one silicon source gas proceeds by the following chemical reaction: 4HSiCl | 10-21-2010 |
20100273010 | Silicide-coated metal surfaces and methods of utilizing same - In an embodiment, a surface of the present invention comprises of at least one base layer, wherein the at least one base layer contains at least one silicide-forming metal element; and at least one silicide coating layer, wherein the at least one silicide coating layer is formed by a process of: i) exposing the at least one base layer having a sufficient amount of the at least one silicide-forming metal element to a sufficient amount of at least one silicon source gas having a sufficient amount of silicon element, ii) reacting the sufficient amount of the at least one silicide-forming metal element with the sufficient amount of silicon element, and iii) forming the at least one silicide coating layer. | 10-28-2010 |
20120063984 | PROCESSES AND AN APPARATUS FOR MANUFACTURING HIGH PURITY POLYSILICON - In one embodiment, the instant invention includes a method having steps of: feeding a fluidizing gas stream having at least 80 percent of halogenated silicon source gas or mixture of halogenated silicon source gases to fluidize silicon seeds in a reactor, achieving the fluidization of silicon seeds in a reaction zone prior to when the fluidizing gas stream reaches at least 600 degrees Celsius; heating the fluidized silicon seeds residing within the reaction zone to a sufficient reaction temperature to result in more than 50% of the equilibrium conversion for the thermal decomposition reaction in the reaction zone of the reactor; and maintaining the fluidizing gas stream at the sufficient reaction temperature and a sufficient residence time within the reaction zone hereby resulting in more than 50% of the equilibrium conversion for the thermal decomposition reaction in a single stage within the reaction zone to produce an elemental silicon. | 03-15-2012 |