Tsuno, JP
Akihiro Tsuno, Nagoya-Shi JP
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20110301009 | Sheet folding apparatus - A sheet folding apparatus includes a blade member having an edge configured to push a surface of a sheet so as to push the sheet into a sheet folding unit configured to fold the sheet, a pair of nipping members that is included in the sheet folding unit and nips the sheet pushed into the sheet folding unit by the blade member, a blade member moving unit that moves the blade member and a nipping member moving unit that moves the pair of nipping members. The blade member moving unit and the nipping member moving unit are driven by the same driving unit. | 12-08-2011 |
Akihiro Tsuno, Kanagawa JP
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20160041516 | BINDING DEVICE AND IMAGE FORMING APPARATUS INCLUDING THE SAME - According to an aspect of the invention, a binding device includes a first rotary member including a first serrated portion on its circumferential surface, a second rotary member including, on its circumferential surface, a second serrated portion to be engaged with the first serrated portion at an engaging position and configured to perform a binding process by rotating together with the first rotary member with a bundle of sheets pinched therebetween to form serrations in the sheet bundle in thickness direction and bring the sheets into engagement with each other while relatively moving the sheet bundle in a predetermined moving direction, and a clamping unit configured to, when the binding process is performed, clamp the sheet bundle at a clamping position upstream of the engaging position to apply a predetermined pulling force acting in a direction opposite to the moving direction to the sheet bundle. | 02-11-2016 |
Akihiro Tsuno, Osaka JP
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20120312409 | HOSE ASSEMBLY - A hose assembly includes a hose and a joint member integrated with the hose. The joint member includes an inner unit to be arranged on an inside of the hose. The hose includes a hose main body and a lip. The hose main body includes a groove portion and a protrusion portion formed in a spiral shape on an inner surface thereof. The lip includes a first end portion and a second end portion aligned in an axial direction of the hose and spirally provided to cover the groove portion. At least one of the first end portion and the second end portion is a fixed end integrated with the protrusion portion. The hose further includes a first region and a second region. A portion of the lip is positioned within the first region, and another portion of the lip is positioned within the second region. | 12-13-2012 |
Akihiro Tsuno, Aichi JP
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20120065044 | Sheet post-processing apparatus and image forming apparatus - A sheet post-processing apparatus includes: an accumulating unit accumulating a sheet having been conveyed; a center-folding unit folding a central portion, in a conveying direction in which the sheet is conveyed, of the sheet, which has been accumulated by the accumulating unit, and a pressing force moving unit that applies a pressing force to the sheet, which has been folded by the center-folding unit, and moves a portion, at which the pressing force is applied, on the sheet in the conveying direction. | 03-15-2012 |
Atsushi Tsuno, Tokyo JP
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20150214509 | METHOD FOR PRODUCING EL DISPLAY DEVICE AND TRANSFER SUBSTRATE USED IN PRODUCING EL DISPLAY DEVICE - A method for manufacturing an EL display device, in which forming of light-emitting layers includes: preparing transfer substrates, each transfer substrate having a supporting substrate on which a transfer layer including at least red, green, or blue light-emitting material is formed; and performing a transfer process that includes transferring the corresponding transfer layer onto a transfer-target substrate of the EL display device by using the corresponding transfer substrate, each transfer substrate has barrier walls on the supporting substrate thereof, the barrier walls defining openings corresponding to a pixel pattern, and the transfer layer is formed by applying organic material ink to between the barrier walls by an inkjet method, the organic material ink containing the light-emitting material, and the top surface of each of the barrier walls has a protrusion that comes into contact with a corresponding one of banks of the EL display device. | 07-30-2015 |
Hitoshi Tsuno, Yokohama-Shi JP
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20090218630 | SEMICONDUCTOR DEVICE INCLUDING MOS FIELD EFFECT TRANSISTOR HAVING OFFSET SPACERS OR GATE SIDEWALL FILMS ON EITHER SIDE OF GATE ELECTRODE AND METHOD OF MANUFACTURING THE SAME - First and second impurity doped regions are formed in a semiconductor substrate. A first gate electrode is formed on the first impurity doped region with a first gate insulation film interposed therebetween. A second gate electrode is formed on the second impurity doped region with a second gate insulation film interposed therebetween. A first sidewall insulation film is formed on either side of the first gate electrode. A second sidewall insulation film has a thickness different from that of the first sidewall insulation film and are formed on either side of the second gate electrode. A third sidewall insulation film is formed on the first sidewall insulation film on the side of the first gate electrode. A fourth sidewall insulation films have a thickness different from that of the third sidewall, insulation film and are formed on the second sidewall insulation film on the side of the second gate electrode. | 09-03-2009 |
Hitoshi Tsuno, Tokyo JP
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20090127634 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate having an active region, a plurality of gate electrodes formed on the active region with a gate insulating film therebetween, and a dummy pattern formed on the active region in at least a part thereof between the gate electrodes. The dummy pattern is formed so that a spacing between gate electrodes adjacent to each other, and a spacing between the dummy pattern and the gate electrodes adjacent to the dummy pattern, are within predetermined ranges. | 05-21-2009 |
20150179680 | DISPLAY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING DISPLAY DEVICE - A display device according to the present disclosure includes: a transistor section that includes a gate insulating film, a semiconductor layer, and a gate electrode layer, the semiconductor layer being laminated on the gate insulating film, the gate electrode film being laminated on an opposite side to the semiconductor layer of the gate insulating film; a first capacitor section that includes a first metal film and a second metal film, the first metal film being disposed at a same level as wiring layers that are electrically connected to the semiconductor layer and is disposed over the transistor section, the second metal film being disposed over the first metal film with a first interlayer insulating film in between; and a display element that is configured to be controlled by the transistor section. | 06-25-2015 |
Katsuhiko Tsuno, Tokyo JP
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20100309570 | Optical device - An optical device has a reflecting mirror using a particle-dispersed silicon material including silicon carbide and silicon. The reflecting mirror includes a plurality of segments joined to each other by reaction sintering. Producing the segments is easy in comparison with that of a reflecting mirror of one piece. Accordingly, it is possible to reduce probability of breakage of the segments and to shorten process time of production of a reflecting mirror. | 12-09-2010 |
Koichi Tsuno, Wako-Shi JP
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20140103649 | COGENERATION APPARATUS - In a cogeneration apparatus having a power generation unit equipped with a power generator, an internal combustion engine, and a hot water tank connected to the engine through a heat exchanger, there are provided a first pump provided at a flow channel connecting the engine to the heat exchanger and a second pump provided at a second flow channel connecting the heat exchanger to the hot water tank. A temperature of the engine cooling water heated by the engine and a temperature difference between the temperature and a temperature of the engine cooling water cooled by the heat exchanger is determined and based on the determined values, flow rates of the first and second pumps are controlled. | 04-17-2014 |
Masao Tsuno, Ritto JP
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20100150308 | X-RAY INSPECTION APPARATUS - An X-ray inspection apparatus includes an X-ray radiating part, an X-ray detecting part, a mass estimation unit and a mass class determination unit. The X-ray radiating part is configured and arranged to radiate X-rays to an inspection target. The X-ray detecting part is configured and arranged to detect the X-rays radiated from the X-ray radiating part that transmitted through the inspection target. The mass estimation unit is configured to estimate a mass of the inspection target based on an amount of the X-rays detected by the X-ray detecting part. The mass class determination unit is configured to determine which mass class among a plurality of mass classes within a preset range the inspection target belongs to based on the mass of the inspection target estimated by the mass estimation unit. | 06-17-2010 |
Morikazu Tsuno, Shiga JP
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20090289282 | SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid state imaging device includes a transfer transistor for transferring signal charges generated by photoelectric conversion to a floating diffusion layer, a reset transistor for resetting a potential of the floating diffusion layer, and an amplifying transistor for outputting a signal corresponding to the potential of the floating diffusion layer. A low concentration impurity region having an impurity concentration lower than that of the first conductivity type semiconductor region is formed in part of a surface portion of the first conductivity type semiconductor region which is located below a gate electrode of the amplifying transistor and serves as a well region of the amplifying transistor. | 11-26-2009 |
20100308384 | METAL OXIDE SEMICONDUCTOR (MOS) SOLID STATE IMAGING DEVICE THAT INCLUDES A SURFACE LAYER FORMED BY IMPLANTING A HIGH CONCENTRATION OF IMPURITY DURING CREATION OF A PHOTODIODE, AND MANUFACTURING METHOD THEREOF - A photodiode has a carrier accumulation layer of a second conductivity type and a surface area of a first conductivity type deposited in order from an inside towards a surface of a first conductivity type well region. A transfer transistor is formed so that a transfer gate electrode of the transfer transistor partially overlaps the surface layer of the photodiode and is formed above a surface of the first conductivity type well region with a gate insulating film therebetween. The surface layer includes a first surface layer, which partially overlaps the transfer gate electrode in the direction of the x-axis, and a second surface layer adjacent to the first surface layer. A concentration of the impurity of the first conductivity type is higher in the second surface layer than in the first surface layer. | 12-09-2010 |
Natsuki Tsuno, Saitama JP
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20110204228 | CHARGED PARTICLE BEAM APPARATUS - It has been difficult to obtain pattern contrast required for inspecting a specific layer of a circuit pattern in a charged particle beam apparatus which inspects, by using a charged particle beam, the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process. At the time of inspecting the position and type of a defect on a wafer having a circuit pattern which is in semiconductor manufacturing process by using a charged particle beam emitted from a charged particle source ( | 08-25-2011 |
20120292506 | SAMPLE OBSERVATION METHOD USING ELECTRON BEAMS AND ELECTRON MICROSCOPE - A disclosed method for observing the structure and characteristics of a specimen by an electron microscope realizes high-density charge accumulation on a specimen and improves the quality of voltage contrast images. For structural observation of a specimen and evaluation of its electrical characteristic using an electron beam, charging the specimen is performed. In this charging process, high-density charge accumulation on the specimen is achieved by irradiating the specimen with an electron beam set to have injection energy that falls within an injection energy band for which high charging efficiency is attained during electron beam irradiation and changing irradiation energy, while maintaining the injection energy. | 11-22-2012 |
Natsuki Tsuno, Kunitachi JP
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20080246497 | SEMICONDUCTOR WAFER INSPECTION APPARATUS - Efficiency of a charging processing of an insulator sample is improved. And, an electron optical system is adjusted according to a contact resistance value of the insulator sample. Breakdown of a sample is performed before the charging processing, and then, the charging processing is performed. A control parameter of the electron optical system is selected using a result of a resistance value of the sample for checking the breakdown. | 10-09-2008 |
20090179151 | APPARATUS AND METHOD FOR INSPECTION AND MEASUREMENT - An electrification control electrode B is installed at a measured or inspected specimen side of an electrification control electrode A, and a constant voltage is applied from an electrification control electrode control portion of an electrification control electrode B according to an electrification state of a specimen, whereby a variation of an electrification state and a potential barrier of a specimen surface formed before an inspection is suppressed. A retarding potential is applied by an electrification control electrode, and the electrification control electrode B is disposed below the electrification control electrode A adjusted to equal potential to a specimen. As a result, it is possible to adjust the amount that secondary electrons emitted from a specimen such as a wafer to which a primary electron beam is irradiated return to a specimen, and thus it is possible to stably maintain an inspection condition of high sensitivity during an inspection. | 07-16-2009 |
Natsuki Tsuno, Tokyo JP
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20140097342 | ELECTRON MICROSCOPE AND IMAGE CAPTURING METHOD USING ELECTRON BEAM - The present invention is characterized by an electron microscope which intermittently applies an electron beam to a sample and detects a secondary electron signal, wherein an arbitrarily defined detection time (T | 04-10-2014 |
20140264018 | OBSERVATION SPECIMEN FOR USE IN ELECTRON MICROSCOPY, ELECTRON MICROSCOPY, ELECTRON MICROSCOPE, AND DEVICE FOR PRODUCING OBSERVATION SPECIMEN - The electrical charging by a primary electronic is inhibited to produce a clear edge contrast from an observation specimen (i.e., a specimen to be observed), whereby the shape of the surface of a sample can be measured with high accuracy. An observation specimen in which a liquid medium comprising an ionic liquid is formed in a thin-film-like or a webbing-film-like form on a sample is used. An electron microscopy using the observation specimen comprises: a step of measuring the thickness of a liquid medium comprising an ionic liquid on a sample; a step of controlling the conditions for irradiation with a primary electron on the basis of the thickness of the liquid medium comprising the ionic liquid; and a step of irradiating the sample with the primary electron under the above-mentioned primary electron irradiation conditions to form an image of the shape of the sample. | 09-18-2014 |
20150041644 | ELECTRONIC MICROSCOPE, SETTING METHOD OF OBSERVATION CONDITION OF ELECTRONIC MICROSCOPE, AND OBSERVATION METHOD USING ELECTRONIC MICROSCOPE - An automatic setting method of an observation condition to facilitate analysis of an image and a sample observation method by automatic setting in an observation method of a structure of a sample by the electronic microscope and an electronic microscope having an automatic setting function are provided. The method includes a step of irradiating a fixed position in an observation region with an intermittent pulsed electron beam; a step of detecting a time change of an emission electron from the sample by the intermittent electron beam; and a step of setting the observation condition of the electronic microscope from the time change of the emission electron. | 02-12-2015 |
20150303030 | SEMICONDUCTOR INSPECTION DEVICE, AND INSPECTION METHOD USING CHARGED PARTICLE BEAM - Provided are an inspection device that detects with high precision and classifies surface unevenness, step batching, penetrating blade-shaped dislocations, penetrating spiral dislocations, basal plane dislocations, and stacking defects formed in an SiC substrate and an epitaxial layer; and a system. In the inspection device using charged particle beams, a device is used that has an electrode provided between a sample and an objective lens, said device being capable of applying a positive or negative voltage to the electrode and obtaining images. A secondary electron emission rate is measured and energy EL and EH for the charged particles are found. First, an image (first image) is obtained using the EH and positive potential conditions. Next, an image (second image) is obtained using the EL and negative potential conditions. Next, an image (third image) is obtained at the same position as the second image, and by using the EL and positive potential conditions. | 10-22-2015 |
Riichi Tsuno, Shimonoseki-Shi JP
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20100304016 | CONDUCTIVE MATERIAL FOR CONNECTING PART AND METHOD FOR MANUFACTURING THE CONDUCTIVE MATERIAL - There is provided a conductive material comprising a base material made up of a Cu strip, a Cu—Sn alloy covering layer formed over a surface of the base material, containing Cu in a range of 20 to 70 at. %, and having an average thickness in a range of 0.1 to 3.0 μm, and an Sn covering layer formed over the Cu—Sn alloy covering layer having an average thickness in a range of 0.2 to 5.0 μm, disposed in that order, such that portions of the Cu—Sn alloy covering layer are exposed the surface of the Sn covering layer, and a ratio of an exposed area of the Cu—Sn alloy covering layer to the surface of the Sn covering layer is in a range of 3 to 75%. The surface of the conductive material is subjected to a reflow process, and preferably, an arithmetic mean roughness Ra of the surface of the material, in at least one direction, is not less than 0.15 μm while the arithmetic mean roughness Ra thereof, in all directions, is not more than 3.0 μm, and the average thickness of the Cu—Sn alloy covering layer is preferably not less than 0.2 μm. The conductive material is fabricated by a method whereby the surface of the base material is subjected to roughening treatment, an Ni plating layer, a Cu plating layer, and an Sn plating layer are formed, as necessary, over the surface of the base material, and subsequently, a reflow process is applied. | 12-02-2010 |
Seiryo Tsuno, Tokyo JP
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20110306274 | POLISHING APPARATUS AND POLISHING METHOD - A polishing apparatus has a polishing section ( | 12-15-2011 |
Shingo Tsuno, Kanagawa JP
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20090263669 | COMPONENTS COMPRISING POLYISOBUTYLENE COMPOSITIONS - This document provides components comprising a predetermined sealing surface and a curable composition thereon. The cured reaction product of the curable composition forms a seal having improved resistance to vapor permeation when exposed to hydrocarbon fluids and especially to hydrocarbon fluids comprising low molecular weight components, oxygenated compounds, polar compounds or blends containing polar and non-polar compounds such as alcohol and alcohol containing fuels. | 10-22-2009 |
20130189532 | ADHESIVE COMPOSITIONS - Moisture curable poly(acrylate) compositions having more environmentally acceptable catalysts and/or faster skin over time. The compositions demonstrate resistance to hydrocarbon fluids, such as transmission fluids, oils and fuels and are useful as gasketing materials. | 07-25-2013 |
Shingo Tsuno, Tokyo JP
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20090064960 | ONE-PART SEAL MATERIAL COMPOSITION CURABLE AT AMBIENT TEMPERATURE, AND INTAKE MANIFOLD USING THE SAME - A one-part seal material composition curable at ambient temperature is provided that can meet all the requirements of: adhesiveness to weight saving materials; strength which can endure use in automotive parts; viscosity appropriate for enhancing efficiency of mass production; and fuel vapor sealing properties, and an intake manifold using the same. In a one-part seal material composition curable at ambient temperature which is hardened by a atmospheric moisture, (A) a polyacrylate having the end blocked with a hydrolyzable silyl group; and (B) a plasticizer are included, in which the content of the component (B) is set to be 15 parts by mass to 35 parts by mass per 100 parts by mass of the component (A). Furthermore, an intake manifold is produced using the composition. | 03-12-2009 |
Shingo Tsuno, Chigasaki JP
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20080202683 | (METH)ACRYLIC ADHESIVE WITH LOW ODOR AND HIGH IMPACT RESISTANCE - The present invention relates to (meth)acrylic adhesives with high impact resistance and no or low odor. The compositions comprise at least a (meth)acrylic ester E which may be obtained by esterification of an alcohol ALC and methacrylic or acrylic acid, said alcohol ALC contains at least 5 carbon atoms; and at least a rubber block co-polymer RS being solid at room temperature and which is a co-polymer of styrene and butadiene and/or isoprene and/or ethylene propylene diene monomer; and at least a polymer PL having pending (meth)acrylic groups and is a butadiene/acrylonitrile co-polymer with terminal (meth)acrylic groups or a polyurethane (meth)acrylate or an ester obtainable by esterification of an alcohol ALC-II and methacrylic or acrylic acid and which has a molecular weight between 200 and 9000 g/mol. Such combinations E-RS-PL have lower viscosity than PL and a combination E-RS. | 08-28-2008 |
20090299017 | One-Part Type Moisture Curable Composition - To provide a one-part type moisture curable composition exhibiting superior adhesion properties, weather resistance, coating tolerance, and the like, and providing good operationability, which is cured by moisture in the atmosphere to form an elastic material in the form of a rubber A one-part type moisture curable composition comprising: (A) a prepolymer having a urea bond(s), a urethane bond(s), and a hydrolysable silyl group(s) at a chain end(s) or pendent position(s) thereof; and (B) a polymer comprising a polyether structure(s) and/or a polyacryl structure(s) in the main chain, and having a hydrolysable silyl group(s) at a chain end(s) or pendent position(s) thereof. | 12-03-2009 |
Shinji Tsuno, Ashigarakami-Gun JP
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20140092172 | IMAGE FORMATION METHOD - An image formation method includes an ink ejection process of ejecting, from an inkjet head having a liquid-repellent film on an ejection surface thereof, an ink composition including: an oxidative-treated carbon black pigment having an average primary particle diameter of 25 nm or less and having an amount of oxygen of 5 atomic % or more on a surface thereof; a water-soluble nonionic compound including at least one selected from the group consisting of an ethyleneoxy chain and a propyleneoxy chain and in which a total number of the ethyleneoxy chain and the propyleneoxy chain is from 3 to 25; and water. | 04-03-2014 |
Syuji Tsuno, Kako-Gun JP
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20120308799 | WATER-ABSORBENT SHEET STRUCTURE - A water-absorbent sheet structure comprises a structure in which an absorbent layer containing a water-absorbent resin (A) and a water-absorbent resin (B) is sandwiched with fibrous webs from an upper side and a lower side of the absorbent layer, characterized in that the water-absorbent resin (A) and the water-absorbent resin (B) are contained in a total amount of from 100 to 1,000 g/m | 12-06-2012 |
Syuji Tsuno, Hyogo JP
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20120089108 | WATER ABSORBENT SHEET - A water-absorbent sheet comprising a structure in which an absorbent layer containing a water-absorbent resin and an adhesive is sandwiched with a hydrophilic nonwoven fabric, wherein the water-absorbent sheet has a structure in which the absorbent layer is fractionated into a primary absorbent layer and a secondary absorbent layer with a substrate layer formed by laminating two or more layers of a substrate having breathability adhered together with an adhesive, wherein the substrate layer satisfies the following requirements (1) and (2): (1) the substrate layer having a basis weight of 25 g/m | 04-12-2012 |
Syuji Tsuno, Kako-Hun JP
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20120203191 | WATER-ABSORBENT SHEET - A water-absorbent sheet comprising a structure in which an absorbent layer containing a water-absorbent resin and an adhesive is sandwiched with nonwoven fabrics from an upper side and a lower side of the absorbent layer, wherein the water-absorbent sheet has a laminate structure in which the absorbent layer is fractionated into a primary absorbent layer and a secondary absorbent layer with a breathable fractionating layer, and wherein at least one sheet out of the nonwoven fabrics is a spunbond nonwoven fabric, and at least a nonwoven fabric at a lower side out of the nonwoven fabrics is a hydrophilic nonwoven fabric. The water-absorbent sheet of the present invention exhibits some effects that a water-absorbent sheet is capable of accomplishing avoidance of gel blocking phenomenon and liquid leakage, while obtaining basic properties as a water-absorbent sheet at a high level, by using specified nonwoven fabrics, and further providing a hydrophilic nonwoven fabric as a lower side of a nonwoven fabric of the absorbent layer of a water-absorbent sheet, even for a water-absorbent sheet containing a very small amount of pulps and being thinner than a conventional product. | 08-09-2012 |
Takahiko Tsuno, Tokyo JP
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20150283670 | GRINDING WHEEL AND CLEANING METHOD FOR GRINDING CHAMBER - A grinding wheel includes an annular base and a plurality of abrasive members fixed to the lower surface of the base and arranged annularly. The base has a plurality of through holes for discharging a grinding water. The plural through holes radially extend from the inner side surface to the outer side surface of the base. The plural through holes are arranged at given intervals in the circumferential direction of the base so that the grinding water is scattered in different directions from the through holes. | 10-08-2015 |
Takashi Tsuno, Osaka-Shi JP
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20120119225 | SILICON CARBIDE SUBSTRATE, EPITAXIAL LAYER PROVIDED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE - The present invention provides a silicon carbide substrate, an epitaxial layer provided substrate, a semiconductor device, and a method for manufacturing the silicon carbide substrate, each of which achieves reduced on-resistance. The silicon carbide substrate is a silicon carbide substrate having a main surface, and includes: a SiC single-crystal substrate formed in at least a portion of the main surface; and a base member disposed to surround the SiC single-crystal substrate. The base member includes a boundary region and a base region. The boundary region is adjacent to the SiC single-crystal substrate in a direction along the main surface, and has a crystal grain boundary therein. The base region is adjacent to the SiC single-crystal substrate in a direction perpendicular to the main surface, and has an impurity concentration higher than that of the SiC single-crystal substrate. | 05-17-2012 |
20120128081 | POWER LINE COMMUNICATION DEVICE, POWER SUPPLY CIRCUIT WITH COMMUNICATION FUNCTION, ELECTRICAL APPLIANCE, AND CONTROL AND MONITORING SYSTEM - To realize a transmission function of power line communication by a further simplified and cost-effective circuit configuration, in a PLC modem installed in an electric appliance such as a household electrical appliance. | 05-24-2012 |
20120133351 | SWITCHING POWER SOURCE - A switching power source according to one embodiment includes a first transistor and a second transistor. The first transistor is connected to a positive electrode of a DC voltage source. The second transistor is connected between the first transistor and a negative electrode of the DC voltage source. The first transistor and the second transistor are alternately placed in conducting state. A gate signal is applied to a gate terminal of the first transistor with reference to a voltage of a terminal of the first transistor that is connected to the positive electrode. A gate signal is applied to a gate terminal of the second transistor with reference to a voltage of a terminal of the second transistor that is connected to the negative electrode. The first transistor and the second transistor are configured with wide bandgap semiconductors of mutually different materials, respectively. | 05-31-2012 |
20120306086 | SEMICONDUCTOR DEVICE AND WIRING SUBSTRATE - A semiconductor device according to an embodiment includes an insulating substrate, a wiring layer formed on a first main surface of the insulating substrate, and a semiconductor element mounted on the wiring layer. In this semiconductor device, the wiring layer includes a first copper-containing material containing copper and a metal having the thermal expansion coefficient smaller than that of copper and the thermal expansion coefficient of the first copper-containing material is smaller than that of copper. | 12-06-2012 |
20130112993 | SEMICONDUCTOR DEVICE AND WIRING SUBSTRATE - A semiconductor device according to one embodiment of the present invention includes an insulating substrate, a wiring layer formed on a first main surface of the insulating substrate and having a conductive property, and a semiconductor element mounted on the wiring layer. In the semiconductor device, the insulating substrate is composed of cBN or diamond. | 05-09-2013 |
20130135046 | SWITCHING CIRCUIT AND ENVELOPE SIGNAL AMPLIFIER - A switching circuit | 05-30-2013 |
20150295048 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device includes a silicon carbide layer, a body region, a source region, a gate insulating film, a gate electrode, a source electrode, a first impurity region, and a second impurity region. The second impurity region is disposed within the silicon carbide layer so as to connect the body region and the first impurity region to each other, and has a second conductivity type. An impurity concentration in the second impurity region is equal to or higher than an impurity concentration in the silicon carbide layer and equal to or lower than a lower limit of an impurity concentration in the body region. | 10-15-2015 |
20150303266 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device has a silicon carbide substrate, a gate insulating film, and a gate electrode. Silicon carbide substrate includes a first impurity region having a first conductivity type, a well region being in contact with the first impurity region and having a second conductivity type which is different from the first conductivity type, and a second impurity region separated from the first impurity region by the well region and having the first conductivity type. The gate insulating film is in contact with the first impurity region and the well region. The gate electrode is in contact with the gate insulating film and is arranged opposite to the well region with respect to the gate insulating film. A specific on-resistance at a voltage which is half a gate driving voltage applied to the gate electrode is smaller than twice the specific on-resistance at the gate driving voltage. | 10-22-2015 |
Takeshi Tsuno, Tokyo JP
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20120031557 | BONDING UNIT CONTROL UNIT AND MULTI-LAYER BONDING METHOD - A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost. | 02-09-2012 |
20120247645 | BONDING METHOD, BONDING APPARATUS, AND BONDING SYSTEM - The present invention includes an activating step S | 10-04-2012 |
20130112334 | ROOM TEMPERATURE BONDING APPARATUS AND ROOM TEMPERATURE BONDING METHOD - A room temperature bonding method of the present invention includes a step of activating two substrates to prepare two activated substrates; a step of bonding the two activated substrates to produce a bonding resultant substrate; a step of performing annealing of the bonding resultant substrate to reduce residual stress of the bonding resultant substrate. According to such a room temperature bonding method, the residual stress of the bonding resultant substrate can be reduced and the quality can be improved. | 05-09-2013 |
20150249026 | ROOM-TEMPERATURE BONDING APPARATUS AND ROOM-TEMPERATURE BONDING METHOD - A room-temperature bonding apparatus includes a vacuum chamber; a first holding mechanism; a second holding mechanism; a beam source; and a pressure bonding mechanism which bonds first and second substrates. At least one of the above members is formed of a first material which is difficult to be sputtered or which does not obstruct a function of a device obtained by bonding the first and second substrates even if the first material is in the bonding surfaces, or a surface of the at least one is covered with the first material. | 09-03-2015 |
20150251904 | ROOM TEMPERATURE BONDING APPARATUS AND ROOM TEMPERATURE BONDING METHOD - A room temperature bonding apparatus includes a first beam source, a second beam source, and a press bonding mechanism. The first beam source emits a first activation beam that irradiates a first surface of a first substrate. Independently from the first beam source, the second beam source emits a second activation beam that irradiates a second surface of a second substrate. The press bonding mechanism bonds between the first substrate and the second substrate by contacting between the first surface and the second surface after the first surface is irradiated with the first activation beam and the second surface is irradiated with the second activation beam. Thus, a plurality of the substrates made of different materials is appropriately bonded. | 09-10-2015 |
20150294900 | ROOM-TEMPERATURE BONDED DEVICE, WAFER HAVING ROOM-TEMPERATURE BONDED DEVICE, AND ROOM-TEMPERATURE BONDING METHOD - A room-temperature bonded device has a first substrate having a first surface and a second substrate having a second surface to be bonded to the first surface. In the bonding of the first surface and the second surface, one of the first surface and the second surface contains an inorganic material such as silicon, SiO | 10-15-2015 |
Takeshi Tsuno, Yokohama-Shi JP
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20110011536 | ROOM TEMPERATURE BONDING APPARATUS - A room temperature bonding apparatus includes: an angle adjustment mechanism that supports a first sample stage holding a first substrate to a first stage so as to be able to change a direction of the first sample stage; a first driving device that drives the first stage in a first direction; a second driving device that drives a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table that supports the second sample stage in the first direction when the second substrate and the first substrate are brought into press contact with each other. In this case, the room temperature bonding apparatus can impose a larger load exceeding a withstand load of the second driving device on the first substrate and the second substrate. Further, the room temperature bonding apparatus can use the angle adjustment mechanism to change a direction of the first substrate such that the first substrate and the second substrate come into parallel contact with each other, and uniformly impose the larger load on a bonding surface. | 01-20-2011 |
20110083801 | ROOM TEMPERATURE BONDING MACHINE AND ROOM TEMPERATURE BONDING METHOD - Provided is a cold jointing apparatus, which comprises a discharge device, a gas feeding device, a pressure gauge, a clarifying device, a pressure controller and a pressing mechanism. The discharge device discharges a gas from the inside of a chamber. The gas feeding device feeds an introduction gas to the inside of the chamber. The pressure gauge measures the pressure in the chamber. The clarifying device clarifies a first board and a second board in the chamber when the measured pressure is at a predetermined degree of vacuum. The pressure controller controls both the discharge device and the gas feeding device so that the measured pressure may be equal to a target pressure. The pressing mechanism presses the first board and the second board in the chamber when the measured pressure is that target pressure. | 04-14-2011 |
20120285624 | Room Temperature Bonding Apparatus - A room temperature bonding apparatus includes angle adjustment means supporting a first sample stage holding a first substrate so as to be able to change a direction of the first sample stage; a first driving device driving the first stage in a first direction; a second driving device driving a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table supporting the second sample stage in the first direction when the second substrate and the first substrate are brought into contact. The apparatus can impose a load exceeding a withstand load of the second driving device on the first and second substrates. Further, the apparatus uses angle adjustment means to change direction of the first substrate to be parallel with the second substrate and uniformly impose the larger load on a bonding surface. | 11-15-2012 |
Takeshi Tsuno, Kanagawa JP
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20110207291 | WAFER BONDING DEVICE AND WAFER BONDING METHOD - A wafer bonding method includes: holding a first substrate with an upper holding mechanism | 08-25-2011 |
20110277904 | ROOM TEMPERATURE BONDING APPARATUS - A room temperature bonding apparatus according to the present invention is provided with a load lock chamber having an internal space which is pressure-reduced; and a cartridge arranged in the load lock chamber. The cartridge includes an island portion formed to contact a substrate when the substrate is put on the cartridge. A flow passage is formed for the island portion to connect a space between the cartridge and the substrate to outside when the substrate is put on the cartridge. Therefore, in the room temperature bonding apparatus can prevent making the substrate is moved to the cartridge due to gas when the internal space is pressure-reduced. | 11-17-2011 |
Takuo Tsuno, Wakayama JP
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20100190708 | Composition for amelioration of body lipid - An object of the present invention is to obtain a composition, which is excellent in amelioration of a lipid metabolism disorder and has a preventive or ameliorating effect on hyperlipemia, obesity or type II diabetes induced by the lipid metabolism disorder, and is also economical and safe with respect to allergy, by extracting a rice bran extract containing a rice bran protein, followed by separation. | 07-29-2010 |
20130237508 | METHOD FOR PRODUCING y-ORYZANOL-CONTAINING FAT OR OIL - The disclosed method for producing a γ-oryzanol-containing fat or oil, the method comprising the steps of: | 09-12-2013 |
Takuo Tsuno, Ito-Gun JP
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20130137883 | Process for Production of Triterpene Alcohol - A process for producing triterpene alcohol, comprising sequentially conducting the following steps (A) to (C): | 05-30-2013 |
Toshiaki Tsuno, Sodegaura-Shi JP
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20150132638 | ELECTROLYTE SHEET - An electrolyte sheet including an electrolyte layer that includes electrolyte particles and a binder, and a base material stacked on the electrolyte layer, wherein the electrolyte particles have an ionic conductivity of 1.0×10 | 05-14-2015 |
Toshiaki Tsuno, Yokohama-Shi JP
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20080302999 | Negative Active Material for Rechargeable Lithium Battery, Method of Preparing Same and Rechargeable Lithium Battery - Disclosed is a negative active material for a rechargeable lithium battery comprising a Si phase, a SiM phase and at least one of a X phase and a SiX phase, wherein each of phases has a crystal grain size of 100 nm and 500 nm. The element M is at least one selected from the group consisting of Ni, Co, B, Cr, Cu, Fe, Mn, Ti, and Y, the element X is at least one selected from the group consisting of Ag, Cu, and Au. However, where M is Cu, X is not Cu. | 12-11-2008 |
20090101865 | Electrode Material for a Lithium Secondary Battery, Lithium Secondary Battery, and Preparation Method for the Electrode Material for a Lithium Secondary Battery - Disclosed is an electrode material for a lithium secondary battery, a lithium secondary battery comprising the same, and a method for preparing the electrode material for a lithium secondary battery. The electrode material for a lithium secondary battery includes Si as a principal component, wherein the interplanar spacing of an Si (111) surface is between 3.15 Å and 3.20 Å using X-ray diffraction. This is achieve by first alloying Si with an element selected from the group consisting of Al, B, P, Ge, Sn, Pb, Ni, Co, Mn, Mo, Cr, V, Cu, Fe, Ni, W, Ti, Zn, alkali metals, alkaline earth metals, and combinations thereof, and then eluting X from the resulting alloy. | 04-23-2009 |