Tsai, Tainan City
Bor-Chen Tsai, Tainan City TW
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20090133903 | ELECTRODE AND METHOD FOR FORMING THE SAME - An electrode and a method for forming the electrode. The electrode comprises: a substrate; and a plurality of metal particles adhering to the substrate. The method comprises steps of: providing a substrate; providing a solution including a solvent and a plurality of metal particles on the substrate; removing the solvent; and making the plurality of metal particles adhere to the substrate. | 05-28-2009 |
Che-Nan Tsai, Tainan City TW
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20120306028 | SEMICONDUCTOR PROCESS AND STRUCTURE THEREOF - A semiconductor process is provided, including: a substrate is provided, a buffer layer is formed, and a dielectric layer having a high dielectric constant is formed, wherein the methods of forming the buffer layer include: (1) an oxidation process is performed; and a baking process is performed; Alternatively, (2) an oxidation process is performed; a thermal nitridation process is performed; and a plasma nitridation process is performed; Or, (3) a decoupled plasma oxidation process is performed. Furthermore, a semiconductor structure fabricated by the last process is also provided. | 12-06-2012 |
20130012012 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A substrate having an oxide layer thereon is provided. A high temperature process higher than 1000° C. is performed to form a melting layer between the substrate and the oxide layer. A removing process is performed to remove the oxide layer and the melting layer. | 01-10-2013 |
20130045594 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE - A manufacturing method for a semiconductor device having a metal gate includes providing a substrate having at least a first semiconductor device formed thereon, forming a first gate trench in the first semiconductor device, forming a first work function metal layer in the first gate trench, and performing a decoupled plasma oxidation to the first work function metal layer. | 02-21-2013 |
20130075874 | SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF - A semiconductor structure includes a substrate, an oxide layer, a metallic oxynitride layer and a metallic oxide layer. The oxide layer is located on the substrate. The metallic oxynitride layer is located on the oxide layer. The metallic oxide layer is located on the metallic oxynitride layer. In addition, the present invention also provides a semiconductor process for forming the semiconductor structure. | 03-28-2013 |
Cheng-Che Tsai, Tainan City TW
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20130038598 | Image Processor, Display System, and Method for Producing Three Dimension Images - An image processor which produces three dimension images according to a shift signal includes a receive circuit, a pixel select circuit, a pixel arrange circuit, and a shift circuit, in which the receive circuit receives the left eye pictures and the right eye pictures, the pixel select circuit selects pixel information from the left eye pictures and the right eye pictures, the pixel arrange circuit arranges the selected pixel information onto a lot of positions for right eye or left eye of the viewer, and the shift circuit shifts the arranged pixel information when the shift signal is asserted. | 02-14-2013 |
20130176348 | LIQUID CRYSTAL DISPLAY AND METHOD FOR OPERATING THE SAME - A liquid crystal display (LCD) and an operating method thereof are provided. The operating method includes the following steps. It is determined whether a first frame and a second frame following the first frame are dynamic frames. When the first frame and the second frame are dynamic frames, a timing controller of the LCD performs a polarity inversion on a polarity signal, so that the polarity signal corresponding to the first frame is the same as the polarity signal corresponding to the second frame. When the second frame is written into an LCD panel of the LCD, energy written into the LCD panel is reduced. | 07-11-2013 |
20130181964 | LIQUID CRYSTAL DISPLAY - A liquid crystal display (LCD) including a LCD panel having a plurality of pixels, a source driver outputting a plurality of pixel voltages to the LCD panel, a gate driver, and a timing controller is provided. During performing a polarity inversion on a polarity signal corresponding to a first frame, the timing controller sequentially outputs a first start signal and a second start signal to the gate driver in a first frame period corresponding to the first frame. The gate driver sequentially outputs a plurality of first scan signals and a plurality of second scan signals to the LCD panel according to the first start signal and the second start signal, so that the brightness corresponding to a plurality of gray levels in the first frame are equal to the brightness corresponding to the gray levels in a plurality of previous frames and a plurality of following frames. | 07-18-2013 |
Cheng-Han Tsai, Tainan City TW
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20120241653 | MICROFLUIDIC DEVICE WITH FLUID DRIVING CAPABILITY - A microfluidic device includes: a shape memory substrate having a shape memory polymer matrix and a plurality of particles embedded in the shape memory polymer matrix, the shape memory polymer matrix being thermally transformable from a temporary shape to an original shape, the particles being made from a magnetically coercive material; and a microfluidic chip attached sealingly to the shape memory substrate and defining a microfluidic channel. The shape memory polymer matrix is indented inwardly to form an indented space in fluid communication with the microfluidic channel when the shape memory polymer matrix is heated to transform from the temporary shape to the original shape. | 09-27-2012 |
Cheng-Yen Tsai, Tainan City TW
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20090139383 | Food Processor Cutting Device Having a Position Adjustment Function - A cutting device for a food processor includes a base, a cutting unit mounted on the base, a plurality of position adjustment units connected with the cutting unit to adjust a position of the cutting unit, a transmission unit mounted on the base and connected with the cutting unit to drive the cutting unit, a push unit connected with the transmission unit to drive the transmission unit, and a driving unit connected with the push unit to drive the push unit. Thus, each of the position adjustment units presses the cutting unit to adjust the position of the cutting unit so as to tighten and locate the cutting unit, thereby preventing the cutting unit from being loosened or vibrated. | 06-04-2009 |
20120090477 | ENCRUSTING MACHINE - An encrusting machine is revealed. The encrusting machine mainly includes a power source disposed on a power unit of a machine body. A force output end of the power source is disposed with a first drive belt for driving a cut unit and a second drive belt for driving a food receiving unit. A plurality of cutting blades is mounted in a cutting opening on a middle part of a cut-off base of the cut unit. The blades are controlled by the power unit and vertical movement of the cut-off base is also controlled by the power unit. In the food receiving unit, a toggle set on a cam is used to control vertical movement of a catch basin on top of a push set. The structure is simplified so that the machine is with reduced cost, easy assembly, reduced failure rate reduced, convenient maintenance and high practicality. | 04-19-2012 |
Chih-Cheng Tsai, Tainan City TW
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20120231221 | Woven Fabric With A Color Glittering Effect - A woven fabric with a color glitter effect is woven from plurality A directional yarn sets and B directional yarn sets perpendicular the A directional yarns, wherein each A directional yarn set includes at least one yarn, a shrinkage of which is more than 3%, and the at least one yarn at least contains two successive organizing points for a downward arrangement when it is woven, such that each B directional yarn set is compressed to form a convex structure and has at least two yarns with different colors, a central level position of one of the at least two yarns of a peak portion of the convex structure, at which the B directional yarn set is located, is higher than a top level position of a lowest yarn of a valley portion of a concave structure, at which the B directional yarn set is located. | 09-13-2012 |
Chih-Woei Tsai, Tainan City TW
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20120124468 | Electronic Apparatus Having a Touch-Controlled Interface and Method of Displaying Figures Related to Files within a certain Time Period - An electronic apparatus having a touch-controlled interface includes a display unit, a touch-controlled unit, and a display interface. The touch-controlled unit is provided on the display unit, while the display interface is arranged on the display unit for showing figures related to files. When the touch-controlled unit is touched, a signal is generated to make the display interface respond. Further, the display interface shows a time scroll bar, and a user may touch different points of the time scroll bar to define a time period, and thus the display interface is made to show the figures of target files accessed in the time period. Furthermore, a display method includes steps of displaying the figures of files via the display interface, touching the time scroll bar on the display interface to define the time period, and displaying the figures of target files accessed in the time period via the display interface. | 05-17-2012 |
20130100287 | Blind Spot Detection System and Blind Spot Detection Method Thereof - A blind spot detection system and method thereof applicable to a transportation vehicle. The blind spot detection system comprises a plurality of detection modules, a processing module and a display module. When the transportation vehicle moves at a speed less than a predetermined speed or at a stop moving state, each detection module is used to detect a plurality of blind spot images around the transportation vehicle. The processing module is connected to each detection module and used to receive the plurality of blind spot images and execute an image processing for detecting and identifying a moving object in the plurality of blind spot images, and to generate a mark pattern corresponding to the moving object. The display module is connected to the processing module and used to display the plurality of blind spot images and the mark pattern in a blind spot display mode. | 04-25-2013 |
20130113923 | Blind Spot Detection Alert System - A blind spot detection alert system. The system comprises two image capturing modules, a processing module, a first display module and a second display module. The two image capturing modules capture a right image and a left image respectively. The first display module is disposed on the right of the second display module. The processing module receives the right image and the left image to analyze a car moving direction. When the processing module determines the car moving direction is a right direction, the first display module displays the right image. When the processing module determines the car moving direction is a left direction, the second display module displays the left image. The processing module calculates a distance to a coming car, a moving direction of the coming car and a speed of the coming car according to the image to get an alert message. | 05-09-2013 |
Ching-En Tsai, Tainan City TW
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20100099784 | THERMOPLASTIC ELASTOMER FOAMING MATERIAL - A thermoplastic elastomer foaming material is provided. The thermoplastic elastomer foaming material includes a hydrogenated styrenic/conjugated diene copolymer in a range from 5 to 35 weight percent; at least one of an acetate copolymer and an acrylate copolymer in a range from 3 to 30 weight percent; an amorphous polyolefin in a range from 20 to 60 weight percent; and a plasticizer in a range from 10 to 40 weight percent. | 04-22-2010 |
Ching-Ling Tsai, Tainan City TW
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20130042218 | METHOD OF SIMULATING AN ESD CIRCUIT LAYOUT - A method of simulating an electrostatic discharge (ESD) circuit layout is disclosed. A netlist of an electronic circuit is pre-simulated. A circuit layout, including an ESD circuit layout, is accordingly generated. Parasitic is extracted according to the generated circuit layout. The ESD circuit layout is post-simulated according to an ESD waveform and a result of the parasitic extraction. | 02-14-2013 |
20130043555 | ELECTROSTATIC DISCHARGE (ESD) PROTECTION ELEMENT AND ESD CIRCUIT THEREOF - An ESD protection circuit connected between an I/O pad and an internal circuit is disclosed. The ESD protection circuit includes a P type ESD protection element which has a first P type doped region and a first N type doped region. The covered shape of the first P type doped region is a polygon having at least eight edges, wherein the polygon is bilateral symmetry, and the first N type doped region is disposed to encompass said first P type doped region. During an ESD event, the first P type doped region of the P type ESD protection element receives an ESD current and uniformly drains it away. | 02-21-2013 |
20130044396 | ELECTROSTATIC DISCHARGE (ESD) PROTECTION ELEMENT AND ESD CIRCUIT THEREOF - An ESD protection circuit connected between an I/O pad and an internal circuit is disclosed. The ESD protection circuit includes a P type ESD protection element which has a first P type doped region and a first N type doped region. The covered shape of the first P type doped region is circular, and the first N type doped region is disposed to encompass said first P type doped region. During an ESD event, the first P type doped region of the P type ESD protection element receives an ESD current and uniformly drains it away. | 02-21-2013 |
20130050884 | ELECTROSTATIC DISCHARGE (ESD) PROTECTION ELEMENT AND ESD CIRCUIT THEREOF - An ESD protection circuit connected between an I/O pad and an internal circuit is disclosed. The ESD protection circuit includes a P type ESD protection element which has a first P type doped region, a first isolation structure and a first N type doped region. The first isolation structure is disposed inside the first P type doped region, and the first N type doped region is disposed to encompass said first P type doped region. During an ESD event, the first P type doped region of the P type ESD protection element receives an ESD current and drains it away, and the parasitical capacitance of the P type ESD protection element decreases based on the area of the first P type doped region. | 02-28-2013 |
20130155566 | SELF-RESET TRANSIENT-TO-DIGITAL CONVERTOR AND ELECTRONIC PRODUCT UTILIZING THE SAME - A self-reset transient-to-digital convertor which includes at least one transient detection circuit is disclosed. The transient detection circuit, coupled between a first power line and a second power line, includes at least one voltage drop unit, a current amplifier unit, and a time control unit. When an ESD event occurs, the voltage drop unit is conducted to pass through an ESD current. The current amplifier unit, coupled between the voltage drop unit and the first power line, is conducted by the ESD current to set the level of a first node. The time control unit, coupled between the first node and the second power line, is configured to gradually drain the ESD current away. Wherein, each of the transient detection circuit generates a digital code according to the level of the first node. | 06-20-2013 |
Chin-Yuan Tsai, Tainan City TW
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20100281720 | CLAMPING PIECE STRUCTURE - A clamping piece structure includes a one-piece clamping piece body ( | 11-11-2010 |
Chung-Lin Tsai, Tainan City TW
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20110279420 | DISPLAY - A display is disclosed. The display comprises a panel, a data driver and a scan driver. The panel comprises pixels, data lines and scan lines. The data lines transmit data signals to the pixels, and the scan lines transmit scan signals to the pixels. The data driver provides the data signals, and the scan driver provides the scan signals. The scan driver comprises a shift register circuit. The shift register circuit comprises an i+1 | 11-17-2011 |
Fei-Gwo Tsai, Tainan City TW
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20100047698 | HYBRID MULTI-LAYER MASK - A hybrid mask set for exposing a plurality of layers on a semiconductor substrate to create an integrated circuit device is disclosed. The hybrid mask set includes a first group of one or more multi-layer masks (MLMs) for a first subset of the plurality of layers. Each MLM includes a plurality of different images for different layers, the images being separated by a relatively wide image spacer. The hybrid mask set also includes a first group of one or more production-ready masks for a second subset of the plurality of layers. Each production-ready mask includes a plurality of similar images for a common layer, each image being separated by a relatively narrow scribe street. | 02-25-2010 |
20110281208 | Hybrid Multi-Layer Mask - A hybrid mask set for exposing a plurality of layers on a semiconductor substrate to create an integrated circuit device is disclosed. The hybrid mask set includes a first group of one or more multi-layer masks (MLMs) for a first subset of the plurality of layers. Each MLM includes a plurality of different images for different layers, the images being separated by a relatively wide image spacer. The hybrid mask set also includes a first group of one or more production-ready masks for a second subset of the plurality of layers. Each production-ready mask includes a plurality of similar images for a common layer, each image being separated by a relatively narrow scribe street. | 11-17-2011 |
20120280333 | MULTI-NANOMETER-PROJECTION APPARATUS FOR LITHOGRAPHY, OXIDATION, INSPECTION, AND MEASUREMENT - An apparatus, method for manufacturing the apparatus, and method for processing a substrate using the apparatus are disclosed. An exemplary apparatus includes a substrate having a plurality of cells, wherein each cell includes a cell structure. The cell structure includes a piezoelectric film portion and a tip disposed over the piezoelectric film portion. The tip is physically coupled with the piezoelectric film portion. | 11-08-2012 |
20130023121 | DOUBLE PATTERNING METHOD USING TILT-ANGLE DEPOSITION - Methods for patterning material layers, which may be implemented in forming integrated circuit device features, are disclosed. In an example, a method includes forming a first resist layer over a material layer; forming a second resist layer over the first resist layer; forming an opening that extends through the second resist layer and the first resist layer to expose the material layer, wherein the opening has a substantially constant width in the second resist layer and a tapered width in the first resist layer; and performing a tilt-angle deposition process to form a feature over the exposed material layer. | 01-24-2013 |
Feng-Tsai Tsai, Tainan City TW
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20110169106 | MICRO ELECTRONIC MECHANICAL SYSTEM STRUCTURE AND MANUFACTURING METHOD THEREOF - A micro electronic mechanical system structure and a manufacturing method thereof are provided. A substrate has a plurality of conductive regions is provided. A dielectric layer is formed on the substrate. A plurality of openings and recesses are formed in the dielectric layer, wherein the openings expose the conductive regions. The recesses are located between the openings. A conductive layer is formed on the dielectric layer and the openings and the recesses are filled with the conductive layer. The conductive layer is patterned to form a plurality of strips of the first conductive patterns on the dielectric layer and a second conductive pattern on the sidewall and the bottom of each recess, wherein the first conductive patterns are connected with each other through the second conductive patterns. The dielectric layer is removed. The second conductive patterns between the first conductive patterns are removed. | 07-14-2011 |
20120153469 | MICRO ELECTRONIC MECHANICAL SYSTEM STRUCTURE - A micro electronic mechanical system structure and a manufacturing method thereof are provided. A substrate has a plurality of conductive regions is provided. A dielectric layer is formed on the substrate. A plurality of openings and recesses are formed in the dielectric layer, wherein the openings expose the conductive regions. The recesses are located between the openings. A conductive layer is formed on the dielectric layer and the openings and the recesses are filled with the conductive layer. The conductive layer is patterned to form a plurality of strips of the first conductive patterns on the dielectric layer and a second conductive pattern on the sidewall and the bottom of each recess, wherein the first conductive patterns are connected with each other through the second conductive patterns. The dielectric layer is removed. The second conductive patterns between the first conductive patterns are removed. | 06-21-2012 |
Guo-Ruey Tsai, Tainan City TW
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20120169605 | REAL-TIME INFORMATION TRANSMISSION AND RECEPTION SYSTEM - In a real-time information transmission and reception system, a transmission device includes a light emitter driven by a modulated control signal generated by a modulation controller based on a code sequence, which is encoded from an input signal generated by an input unit and corresponding to information to be transmitted, to emit light. The modulated control signal has a constant average power, and various frequencies greater than 60 Hz. A reception device includes a photoelectric sensor for sensing the light emitted by the light emitter to generate a current signal that is demodulated and processed to generate a data output corresponding to the information and received by a display unit for displaying the information thereon. | 07-05-2012 |
Hann-Huei Tsai, Tainan City TW
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20090155948 | METHODS FOR MANUFACTURING CMOS COMPATIBLE BIO-SENSORS - A manufacture method for CMOS sensor, which comprise of steps such as: forming protection layer on a substrate having multiple device structural layers, then using first photo-resist layer as mask for etching to form patterned molecular sensing layer, then forming third photo resist layer and etching protection layer and substrate so as to remove partial substrate underneath the sensor structure. | 06-18-2009 |
Ho-Jan Tsai, Tainan City TW
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20090078393 | AIR CONDITIONING OPERATING ON HEAT EXCHANGE BETWEEN WATER SUPPLY SYSTEM AND GROUND ENTHALPY - An air conditioning system operating on heat exchange between water supply system and ground enthalpy includes a first pipeline, a fan, and a power supply unit. The first pipeline is divided into an input section, a heat exchange section, and an output section in sequence to input water from an outdoor water source. The fan corresponds in position to the heat exchange section. The power supply unit is adapted to supply power to the fan. The air blowing by the fan facilitates the enthalpy in the water source executing sufficient heat exchange with air in a room to lower or elevate beforehand the room temperature so to shorten the startup time of or forthwith substitute the air conditioner. | 03-26-2009 |
Hsi-Hsien Tsai, Tainan City TW
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20090052202 | Vehicle lamp fixing device - A vehicle lamp fixing device includes at least an engage groove in a rear wall of a lamp socket, the engage groove provided with an opening formed in an outer side, and an elastic stop lug formed in a sidewall of the engage groove. The elastic stop lug can be pressed to retreat in the sidewall so as to let the shank of a bolt to pass over, and then recover to its original position to stop the shank of the bolt not to fall out of the opening, so the bolt can be held in the engage groove without using a finger so that a worker can conveniently fix the lamp socket on a vehicle body. | 02-26-2009 |
20090073705 | REFLECTIVE REAR LIGHT FOR A TRUCK - A reflective rear light for a truck includes a light housing, a reflection plate and a lens. The light housing is formed integrally with a circuit board provided thereon with a clearance light and side marker light region. The reflection plate is provided with a side reflecting plate corresponding to the clearance light and side marker light region on the circuit board. The lens has one side disposed with a side light transmission region having its front side provided with a clearance light refraction region, having one inner side equipped with a slot at a location near the side light transmission region for fitting a side reflector with a side light refraction region. The truck rear light is disposed with several different warning light regions to illuminate a license plate and reinforcing effect of projecting light on the truck width and side. | 03-19-2009 |
20110007516 | TRUCK REAR LAMP - A truck rear lamp includes a housing, a unitary circuit board, a main lamp shell, a side lamp shell and a license-plate lamp shell combined together. The circuit board has a front side provided with plural main LEDs and a rear side fixed with a connecting seat having an outer end disposed with a side LED, further having plural license plate LEDs arranged at a location near the bottom of a rear side, and the license plate LEDs has one side provided with a reflecting mirror. The unitary circuit board received in the housing is installed thereon with LEDs respectively located at different locations for carrying out different-purpose lighting and warning, able to save time and labor in assembly and lower producing cost. | 01-13-2011 |
20110261575 | TRUCK REAR LAMP - A truck rear lamp includes a base, a main lamp seat, a circuit board, a side lamp holder, a license plate lamp holder, a main lamp shell, a side lamp shell and a license plate lamp shell. The circuit board is assembled on the front side of the main lamp seat and provided thereon with plural main LEDs. The side lamp holder combined with a rear side of the main lamp seat is installed with plural side LEDs provided with no circuit board. The license plate lamp holder is set at a rear lower side of the main lamp seat and disposed with plural license plate LEDs provided with no circuit board and respectively having one side provided with a reflecting mirror for reflecting light of the license plate LEDs. | 10-27-2011 |
Hsun-Heng Tsai, Tainan City TW
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20110275145 | MANUFACTURING METHOD AND STRUCTURE OF CELL CRYOPRESERVATION TUBE - Manufacturing method of cell cryopreservation tube comprises the steps of providing a metal tubule having an inside wall and an outside wall. Smoothing the inside wall of the metal tubule thereby forming a smooth surface on the inside wall, and the roughness of the smooth surface is named the first roughness. Roughening the outside wall of the metal tubule thereby forming a rough surface on the outside wall, and the roughness of the rough surface is called the second roughness. The magnitude of the second roughness is greater than the first roughness. | 11-10-2011 |
Huai-Hsuan Tsai, Tainan City TW
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20090032490 | METHOD OF FABRICATING COLOR FILTER - Methods for fabricating color filters are provided. Firstly, a substrate having a first region and a second region is provided. Then, a first dichroic layer and a first mask layer are formed on the first region sequentially. Next, a second dichroic layer is formed on the substrate to cover the first mask layer and the surface of the second region of the substrate. Thereafter, a second mask layer is formed on the second dichroic layer on the second region. Afterwards, the second dichroic layer on the first region and between the first mask layer and the second mask layer is etched. Then, the first mask layer and the second mask layer are removed. | 02-05-2009 |
Hui-Ting Tsai, Tainan City TW
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20120214383 | Systems and Methods Providing an Air Zone for a Chucking Stage - A system includes a chuck with a retaining ring on a first surface thereof. The first surface and the retaining ring are both circular, the retaining ring having a first inner circumference. The system also includes a platen with a second surface, and the second surface faces the first surface and is operable to move with the first surface. The system further includes an air zone circumscribed by the first inner circumference that provides an effective inner circumference different from the first inner circumference. | 08-23-2012 |
Hung-Chieh Tsai, Tainan City TW
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20090126789 | Dye-sensitized solar cell - The present invention relates to a dye-sensitized solar cell that exhibits improved photoabsorption efficiency and optoelectronic conversion efficiency in the long-wavelength region. The dye-sensitized solar cell of the present invention, in coordination with an outer loop, comprises: a first substrate; a second substrate; and a photoenergy conversion layer disposed between the first substrate and the second substrate. Herein, the photoenergy conversion layer comprises an electrolytic condensed matter and pluralities of dye-adsorbed units dispersed in the electrolytic condensed matter. In addition, a first photonic crystal layer is disposed on the surface of the first substrate. A beam of light from the external environment can pass through the first photonic crystal layer and the first substrate to arrive in the photoenergy conversion layer. The photoenergy conversion layer can convert the photoenergy of the light to electric energy and the outer loop electrically connects to the first substrate and the second substrate. | 05-21-2009 |
20120112943 | SIGMA-DELTA MODULATOR WITH SAR ADC AND TRUNCATER HAVING ORDER LOWER THAN ORDER OF INTEGRATOR AND RELATED SIGMA-DELTA MODULATION METHOD - A sigma-delta modulator includes a processing circuit, a quantizer, a truncater and a feedback circuit. The processing circuit receives an input signal and an analog information and generates an integrated signal by perform an integration upon a difference between the input signal and the analog information. The quantizer includes a successive approximation register (SAR) analog-to-digital converter (ADC) for receiving the integrated signal and generating a digital information according to the integrated signal. The truncater receives the digital information and generates a truncated information according to the digital information. The feedback circuit generates the analog information to the processing circuit according to the truncated information, wherein an order of the truncater is lower than an order of the integration. | 05-10-2012 |
20130088376 | SIGMA-DELTA MODULATOR WITH SAR ADC AND TRUNCATER AND RELATED SIGMA-DELTA MODULATION METHOD - A sigma-delta modulator includes a processing circuit, a quantizer, a truncater and a feedback circuit. The processing circuit receives an input signal and an analog information and generates an integrated signal by perform an integration upon a difference between the input signal and the analog information. The quantizer includes a successive approximation register (SAR) analog-to-digital converter (ADC) for receiving the integrated signal and generating a digital information according to the integrated signal. The truncater receives the digital information and generates a truncated information according to the digital information. The feedback circuit generates the analog information to the processing circuit according to the truncated information. | 04-11-2013 |
20130154863 | AMPLIFIER, FULLY-DIFFERENTIAL AMPLIFIER AND DELTA-SIGMA MODULATOR - An amplifier, a fully-differential amplifier and a delta-sigma modulator are disclosed. The disclosed amplifier includes a front-end gain stage, an AC-coupled push-pull output stage and a compensation circuit. The compensation circuit is coupled between the front-end gain stage and an output terminal of the amplifier. The AC-coupled push-pull output stage uses an AC-coupled capacitor (which is a passive two terminal electrical component rather than a stray or parasitic capacitance of a transistor) to couple the front-end gain stage to a gate of a top or bottom transistor of a push-pull structure introduced in the AC-coupled push-pull output stage, and uses a resistance component to couple a gate of the top or bottom transistor (depending on which one is coupled to the AC-coupled capacitor) to a bias voltage level. | 06-20-2013 |
20130200953 | OPERATIONAL AMPLIFIER CIRCUITS - An operational amplifier circuit includes a first stage amplifier circuit, a second stage amplifier circuit and a first feedforward circuit. The first stage amplifier circuit is coupled to a first input node for receiving a first input signal and amplifying the first input signal to generate a first amplified signal. The second stage amplifier circuit is coupled to the first stage amplifier circuit for receiving the first amplified signal and amplifying the first amplified signal to generate a first output signal at a first output node. The first feedforward circuit is coupled between the first input node and the second stage amplifier circuit for feeding the first input signal forward to the second stage amplifier circuit. | 08-08-2013 |
20130207718 | FILTERS WITH ORDER ENHANCEMENT - A filter is provided. The filter receives an input signal and generates an output signal according to the input signal. The filter includes an input network, a high-pass network, and an operational circuit. The first input network provides a first normal path for the input signal to generate a first normal signal. The first high-pass network provides a first high-pass path for the input signal to generate a first high-pass signal. The operational circuit has first and second input terminals. The polarity of the second input terminal is inverse to that of the first input terminal. The operational circuit receives the first normal signal by the first input terminal and the first high-pass signal by the second input terminal such that a subtraction operation is performed on the first normal signal and the first high-pass filter to accomplish a low-pass filtering operation for generating the output signal. | 08-15-2013 |
20130214951 | SIGMA-DELTA MODULATORS WITH EXCESS LOOP DELAY COMPENSATION - A sigma-delta modulator is provided for generating a digital output signal. The sigma-delta modulator includes a multi-stage loop filter, a quantizer, and a digital-to-analog converter. The multi-stage loop filter receives an analog input signal and generates an integrated output signal according to the analog input signal. Each stage of the multi-stage loop filter includes a feedback network. The quantizer receives the integrated output signal and quantizes the integrated output signal to generate the digital output signal. The digital-to-analog converter receives the digital output signal and converts the digital output signal to a compensation signal. The digital-to-analog converter provides the compensation signal to a plurality of internal nodes in the feedback network of the last stage of the multi-stage loop filter. | 08-22-2013 |
20140103999 | AMPLIFIER, FULLY-DIFFERENTIAL AMPLIFIER AND DELTA-SIGMA MODULATOR - An amplifier includes a front-end gain stage and an AC-coupled push-pull output stage. The AC-coupled push-pull output stage includes a first transistor, having a source, a drain and a gate, wherein the source of the first transistor is coupled to a first voltage level; a second transistor, having a source, a drain and a gate, wherein the source of the second transistor is coupled to a second voltage level, the gate of the second transistor is coupled to the front-end gain stage, and the drain of the second transistor is coupled to the drain of the first transistor to form an output terminal of the amplifier; an AC-coupled capacitor, which is a passive two terminal electrical component coupled between the front-end gain stage and the gate of the first transistor; | 04-17-2014 |
Hung-Hsin Tsai, Tainan City TW
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20090053840 | HIGH POWER LIGHT EMITTING DEVICE ASSEMBLY WITH ESD PROTECTION ABILITY AND THE METHOD OF MANUFACTURING THE SAME - A high power light emitting device assembly with electro-static-discharge (ESD) protection ability and the method of manufacturing the same, the assembly comprising: at least two sub-mounts, respectively being electrically connected to an anode electrode and a cathode electrode, each being made of a metal of high electric conductivity and high thermal conductivity; a light emitting device, arranged on the sub-mounts; and an ESD protection die, sandwiched and glued between the sub-mounts, for enabling the high-power operating light emitting device to have good heat dissipating path while preventing the same to be damaged by transient power overload of static surge. | 02-26-2009 |
Hung-Sheng Tsai, Tainan City TW
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20120112268 | TERMINATION STRUCTURE OF POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a termination structure of a power semiconductor device and a manufacturing method thereof. The power semiconductor device has an active region and a termination region. The termination region surrounds the active region, and the termination structure is disposed in the termination region. The termination structure includes a semiconductor substrate, an insulating layer and a metal layer. The semiconductor substrate has a trench disposed in the termination region. The insulating layer is partially filled into the trench and covers the semiconductor substrate, and a top surface of the insulating layer has a hole. The metal layer is disposed on the insulating layer, and is filled into the hole. | 05-10-2012 |
I Ting Tsai, Tainan City TW
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20110150337 | METHOD AND SYSTEM FOR AUTOMATIC FIGURE SEGMENTATION - A method for achieving segmentation of a picture according to one aspect of the present invention comprises: determining a first foreground of a picture based on a predetermined mask; applying Gaussian Mixture Models with weighted data (GMM-WD) to the first foreground to generate a second foreground; determining a first background of the picture based on the second foreground; applying the GMM-WD to the first background to generate a second background; and determining an unknown region based on the second background and the second foreground. | 06-23-2011 |
Jian-Shin Tsai, Tainan City TW
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20130069233 | Reverse Damascene Process - The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure. | 03-21-2013 |
20130134541 | Metal Shielding Layer in Backside Illumination Image Sensor Chips and Methods for Forming the Same - A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer. | 05-30-2013 |
20130260552 | Reverse Damascene Process - The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure. | 10-03-2013 |
20130264668 | Image Sensor Cross-Talk Reduction System and Method - A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid. | 10-10-2013 |
20130328198 | REVERSE DAMASCENE PROCESS - The present disclosure relates to a method of forming a back-end-of-the-line metallization layer. The method is performed by forming a plurality of freestanding metal layer structures (i.e., metal layer structures not surrounded by a dielectric material) on a semiconductor substrate within an area defined by a patterned photoresist layer. A diffusion barrier layer is deposited onto the metal layer structure in a manner such that the diffusion barrier layer conforms to the top and sides of the metal layer structure. A dielectric material is formed on the surface of the substrate to fill areas between metal layer structures. The substrate is planarized to remove excess metal and dielectric material and to expose the top of the metal layer structure. | 12-12-2013 |
Jian-Sin Tsai, Tainan City TW
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20080223724 | APPARATUSES FOR ELECTROCHEMICAL DEPOSITION, CONDUCTIVE LAYER, AND FABRICATION METHODS THEREOF - Electrochemical plating (ECP) apparatuses with auxiliary cathodes to create uniform electric flux density. An ECP apparatus for electrochemical deposition includes an electrochemical cell with an electrolyte bath for electrochemically depositing a metal on a substrate. A main cathode and an anode are disposed in the electrolyte bath to provide a main electrical field. A substrate holder assembly holds a semiconductor wafer connecting the cathode. An auxiliary cathode is disposed outside the electrochemical cell to provide an auxiliary electrical field such that a flux line density at the center region of the substrate holder assembly substantially equals that at the circumference of the substrate holder assembly. | 09-18-2008 |
Jui-Che Tsai, Tainan City TW
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20100271898 | ACCESS TO MULTI-PORT DEVICES - Mechanisms for improving static noise margin and/or reducing misread current in multi-port devices are disclosed. In some embodiments related to dual port SRAM a suppress device (e.g., transistor) is provided at each word line port. When both ports are activated, both suppress devices are on and lower the voltage level of these ports, which in turn lower the voltage level at the node storing the data for the memory. As the voltage level at the data node is lowered, noise margin is improved and read disturb can be avoided. | 10-28-2010 |
20110019458 | MEMORY CIRCUITS, SYSTEMS, AND METHODS FOR ROUTING THE MEMORY CIRCUITS - A memory circuit includes a first memory array. The first memory array includes at least one first memory cell for storing a first datum. The at least one first memory cell is coupled with a first word line and a second word line. A second memory array is coupled with the first memory array. The second memory array includes at least one second memory cell for storing a second datum. The at least one second memory cell is coupled with a third word line and a fourth word line. The first word line is coupled with the third word line. The first word line is misaligned from the third word line in a routing direction of the first word line in the first memory array. | 01-27-2011 |
20130188417 | MEMORY CIRCUIT AND METHOD FOR ROUTING THE MEMORY CIRCUIT - A memory circuit includes a first row of memory cells, a first word line and a second word line over and electrically coupled to the first row of memory cells, a second row of memory cells aligned with the first row of memory cells along a predetermined direction, and a third word line and a fourth word line over and electrically coupled to the second row of memory cells. The first word line is aligned with the third word line, and the second word line is aligned with the fourth word line. One of the first word line or the second word line is electrically coupled with one of the third word line or the fourth word line. The other one of the first word line or the second word line is electrically decoupled from the other one of the third word line or fourth word line. | 07-25-2013 |
20140153349 | Simultaneous Two/Dual Port Access on 6T SRAM - A method includes generating a first and a second internal clock signal from a clock signal, wherein a first internal clock signal edge of the first internal clock signal and a second internal clock signal edge of the second internal clock signal are generated from a same edge of the clock signal. A first one of the first and the second internal clock edges is used to trigger a first operation on a six-transistor (6T) Static Random Access Memory (SRAM) cell of a SRAM array. A second one of the first and the second internal clock edges is used to trigger a second operation on the 6T SRAM cell. The first and the second operations are performed on different ports of the 6T SRAM. The first and the second operations are performed within a same clock cycle of the clock signal. | 06-05-2014 |
Jui-Yang Tsai, Tainan City TW
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20120275709 | BUILDING TEXTURE EXTRACTING APPARATUS AND METHOD THEREOF - A building texture extracting apparatus and a method thereof are provided, wherein the building texture extracting apparatus comprises a storage unit and a processor. The storage unit is configured to store an aerial image and a panoramic image of a building. There is a coordinate correlation between the aerial image and the panoramic image. The processor defines an edge segment of a building in the aerial image, calculates an edge function according to the edge segment, projects the edge function onto the panoramic image according to the coordinate correlation to derive an edge curve function, decides an edge curve segment according to the edge curve function, captures an image area under the edge curve segment to be a building texture of the building, and stores the building texture in the storage unit | 11-01-2012 |
Jung-Lieh Tsai, Tainan City TW
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20120194913 | WINDOW SYSTEM AND LIGHT GUIDING FILM THEREIN - The present invention relates to a window and light guiding film therein. The light guiding film includes a film base and at least one microstructure. The microstructure is disposed on a side of the film base, and comprises a first surface and a second surface. The refraction index of the microstructure is 1.9 to 2.6. A first inclination angle is between the first surface and a reference plane, the reference plane is perpendicular to the film base, and a second inclination angle is between the second surface and the reference plane, wherein the first inclination angle is less than or equal to the second inclination angle. | 08-02-2012 |
20130333742 | POWER GENERATING WINDOW SET AND POWER GENERATING MODULE THEREOF - The present invention relates to a power generating window set and a power generating module thereof. The power generating module includes a light-guiding substrate and at least one photoelectric conversion element. The light-guiding substrate has a plurality of microstructures. The photoelectric conversion element is disposed adjacent to the light-guiding substrate. When a light beam illuminates the light-guiding substrate, the microstructures guide a part of the light beam to the photoelectric conversion element, so as to convert the energy of part of the light beam into electrical energy. | 12-19-2013 |
20140160785 | LIGHT GUIDING SYSTEM AND CEILING STRUCTURE - The present invention relates to a light guiding system and a ceiling structure. The light guiding system includes a first light guiding element and a second light guiding element disposed on a first plane and a second plane of a accommodation space, respectively. The second light guiding element includes a plurality of light guiding structures, each having a first surface and a second surface. The light beam from the first light guiding element is refracted by the first surface to enter the light guiding structure, then reflected, and then refracted by the second surface to emit out. | 06-12-2014 |
20140301110 | POWER GENERATING MODULE AND LIGHT GUIDING FILM THEREOF - The present invention relates to a power generating module and light guiding film thereof. The light guiding film includes a film base and at least one microstructure. The microstructure is disposed on a side surface of the film base. After the input light beams pass through the light guiding film, the total luminous flux of the output light beams with the output angles from 70 to 110 degrees is more than 40% of the total luminous flux of the output light beams with the output angles from 0 to 180 degrees. Therefore, most of the output light beams emit in the normal direction. | 10-09-2014 |
Kuen Jer Tsai, Tainan City TW
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20120328717 | PHARMACEUTICAL KIT FOR TREATING NEURONAL DAMAGES - A pharmaceutical kit for treating neuronal damages is disclosed. The pharmaceutical composition of the present invention comprises: a first pharmaceutical composition comprising a first effective amount of a Mg | 12-27-2012 |
Kune-Muh Tsai, Tainan City TW
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20100039057 | ANTI-PINCH METHOD AND DEVICE FOR CONTROLLING AN OPENABLE AND CLOSABLE BODY - In an anti-pinch method and device for controlling an openable and closable body, a driving circuit operatively drives a motor with a driving current to move the body relative to a frame body between closing and open positions. A current sensor generates a sensing signal corresponding to the driving current. A control unit calculates a difference between magnitude of the driving current and a reference current value upon detecting that the magnitude of the driving current is greater than the reference current value, and outputs an abnormal signal indicative of an object being pinched between the body and the frame body upon detecting that the difference is greater than a predetermined threshold value. The driving circuit is responsive to the abnormal signal from the control unit to perform one of stopping driving of the motor and driving the motor to move the body toward the open position. | 02-18-2010 |
Kun-Miao Tsai, Tainan City TW
Leo Tsai, Tainan City TW
Lian-Jou Tsai, Tainan City TW
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20080215545 | Data file management and search method and system based on file attributes - A data file management and search method based on file attributes is disclosed. At least one data file, externally imported or generated by a user, is retrieved. Attributes of the data file are edited, a virtual catalog corresponding to the data file is generated, and a catalog tree is built according to the data file and the virtual catalog. The virtual catalog and the data file are displayed by a user interface. A search operation is performed based on a search command to locate at least one required virtual catalog or data file among multiple data files and virtual catalogs. A basic operation is implemented on the located virtual catalog or data file. | 09-04-2008 |
Miau Shing Tsai, Tainan City TW
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20110086444 | PROCESS FOR PRODUCING SUBSTRATES FREE OF PATTERNS USING AN ALPHA STEPPER TO ENSURE RESULTS - The present disclosure provides a method for making an integrated circuit. The method comprises processing a first surface of a substrate to create the integrated circuit and grinding a second surface of the substrate to remove material until the substrate is substantially close to a desire thickness. The method also includes performing a wet etch process over the second surface of the substrate and performing a chemical mechanical polishing (CMP) process over the second surface of the substrate to remove a pattern on the substrate. The second surface of the substrate is examined with a metrological instrument to determine if the second surface is substantially smooth; if the second surface is not substantially smooth, the steps of performing the CMP process and examining the second surface with the metrological instrument are repeated until the second surface is substantially smooth. | 04-14-2011 |
Mi-Ching Tsai, Tainan City TW
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20110037354 | STATOR STRUCTURE, MICROMOTOR HAVING THE SAME AND MANUFACTURING METHOD THEREFOR - A stator structure, a micromotor having the same, and a micromotor manufacturing method therefor are provided. In the micromotor configured with the stator, a rotor, the stator and a case are disposed outward in a radial direction. The rotor is pivotly connected in the case and the stator includes a FPC assembly which is configured with a plurality of coil windings and at least one position signal generating unit and is circumferentially disposed between the rotor and the case, with the rotor as the axis. Configuration positions of the coil windings and the position signal generating unit are corresponding to magnetic poles of the rotor. | 02-17-2011 |
20140139154 | CURRENT VECTOR CONTROLLED SYNCHRONOUS RELUCTANCE MOTOR AND CONTROL METHOD THEREOF - A current vector controlled synchronous reluctance motor and control method thereof, wherein the motor has a coil on each of the teeth. The coils form a U-phase winding, a V-phase winding and a W-phase winding. The phase windings receive a balanced three-phase current vector to induce closed magnetic field lines, such that the coils induce same magnetic poles adjacent to the rotor unit. Two short magnetic routes are formed along three adjacent teeth and the rotor unit. The efficiency of the reluctance motor is high. | 05-22-2014 |
Min-Chiao Tsai, Tainan City TW
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20120044564 | SWITCHABLE IMAGING DEVICE USING MESOPOROUS PARTICLES - The present invention provides a switchable imaging device, including a plurality of particles suspended in a dielectric medium, at least part of the particles being charged, at least part of the particles being mesoporous particles. | 02-23-2012 |
20120329355 | SWITCHABLE PARTICLE-BASED DISPLAY AND METHOD OF MANUFACTURING SAME - A method for manufacturing a switchable PBD includes filling a plurality of first-type particles and a plurality of second-type particles into each cell, where the plurality of first-type particles carries charges of a first charge polarity having a first charge density and the plurality of second-type particles is substantially electrically neutral, or carries charges having a second charge density that is substantially lower than the first charge density of the first-type particles, and filling a fluid into each cell, where the fluid comprises a charge controlling agent having a second charge polarity opposite to the first charge polarity, and the charge controlling agent has a substantially selective wettability, absorbability or adsorbability on the plurality of second-type particles. As such, at least part of the plurality of second-type particles is charged to have the second charge polarity in each cell. | 12-27-2012 |
Min-Ching Tsai, Tainan City TW
Ming-June Tsai, Tainan City TW
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20120256008 | PATTERNED MARKER FOR ENCODING - A patterned marker for encoding comprises an inner pattern and an outer pattern. The inner pattern is divided into a plurality of first areas. The outer pattern is disposed around the inner pattern and divided into a plurality of second areas. At least one of the first areas is different from at least one of the second areas in color. The patterned marker has encoding function. | 10-11-2012 |
20120277635 | BODY MOTION STAFF, PRODUCING MODULE, IMAGE PROCESSING MODULE AND MOTION REPLICATION MODULE - A body motion staff is an image constructed by encoding the member motion information which is obtained from the plural motion images taken over the motion of a multi-member body by a three-dimensional motion capturing apparatus. The member includes a link or a joint of the multi-member body. | 11-01-2012 |
20120307021 | DUAL-MODE OPTICAL MEASUREMENT APPARATUS AND SYSTEM - A dual-mode 3D optical measurement apparatus is applied to scan at least one object or capture the motion of at least one object. The optical measurement apparatus includes a light-projection unit, a plurality of marker units, and an image-capturing unit. The light-projection unit projects light on the object. The marker units are disposed at the object. When the dual-mode 3D optical measurement apparatus executes a static scan mode, the light-projection unit projects light on the surface of the static object, and then the image-capturing unit captures a plurality of static images of the object. When the dual-mode 3D optical measurement apparatus executes a motion capture mode, the image-capturing unit captures a plurality of motion images of the marker units. In addition, a dual-mode 3D optical measurement system is also disclosed. | 12-06-2012 |
20130069936 | FEATURE-BASED DATA STRUCTURE FOR DIGITAL MANIKIN - A feature-based data structure of a digital manikin for describing the exterior features of a body comprises a plurality of feature points of the body, a plurality of girth lines, and a plurality of meridian lines. The girth lines pass through the feature points. Each of the meridian lines is formed by connecting the corresponding feature points respectively out of the girth lines. The girth lines of an arm of the body include an arm-hole girth, an elbow girth, and a palm base girth. The arm-hole girth passes through the shoulder end point, the front arm pit, and the rear arm pit. The elbow girth passes through the concave and convex points on the elbow girth. The palm base girth means the location where the size variation of the cross-sectional profile from the fore arm to the palm is the largest. | 03-21-2013 |
Ming-Shyong Tsai, Tainan City TW
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20120177565 | METHOD FOR MAKING A CONDUCTIVE TIN DIOXIDE POWDER - A method for making a conductive tin dioxide powder includes: reacting a tin salt solution with a base so as to form a precipitate of a tin oxide precursor; and drying the tin oxide precursor and subjecting the tin oxide precursor to calcination under a reducing atmosphere at an elevated temperature so as to form the conductive tin dioxide powder. | 07-12-2012 |
Min-Shing Tsai, Tainan City TW
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20090090677 | Method of treating organic compounds in groundwater - A method of treating organic compounds in groundwater utilizes permeable catalytic barriers to carry out heterogeneous catalytic oxidation to degrade organic compounds. The permeable catalytic barriers are made of highly permeable catalytic materials, used to contact with the polluted groundwater mixed with oxidant to carry out heterogeneous catalytic oxidation to degrade organic compounds. Ditches are properly excavated to be filled with catalytic materials so as to form the permeable catalytic barriers. And, groundwater monitoring wells and oxidant injection wells are also built at proper locations, so that proper amount of oxidant can be determined and re-treatment can be promptly operated if necessary. | 04-09-2009 |
Pei-Chian Tsai, Tainan City TW
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20120194913 | WINDOW SYSTEM AND LIGHT GUIDING FILM THEREIN - The present invention relates to a window and light guiding film therein. The light guiding film includes a film base and at least one microstructure. The microstructure is disposed on a side of the film base, and comprises a first surface and a second surface. The refraction index of the microstructure is 1.9 to 2.6. A first inclination angle is between the first surface and a reference plane, the reference plane is perpendicular to the film base, and a second inclination angle is between the second surface and the reference plane, wherein the first inclination angle is less than or equal to the second inclination angle. | 08-02-2012 |
20140036372 | MOVABLE LIGHT-GUIDING DEVICE - A movable light-guiding device includes a light-guiding unit and at least one sucker unit. The light-guiding unit includes at least one light-guiding structure. The sucker unit is installed on the light-guiding unit. Accordingly, a user can easily make the light-guiding device adhere to an object or remove it from an object by using the sucker unit. The movable light-guiding device can be repeatedly installed and uninstalled and thereby it can improve the performance and user's convenience. | 02-06-2014 |
Pei Hua Tsai, Tainan City TW
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20120265206 | MEDICAL DRILL - A medical drill is disclosed, which is made of amorphous alloy, the amorphous alloy is zirconium amorphous alloy comprising 45 at % or above of zirconium, wherein the tensile strength of the medical drill is 1500-2500 Mpa, and the Vicker's hardness of the medical drill is 400-750. Moreover, a medical drill made of titanium amorphous alloy is also disclosed. | 10-18-2012 |
20130105300 | Application of Metallic Glass Coating for Improving Fatigue Resistance of Aluminum Alloys | 05-02-2013 |
20130108888 | APPLICATION OF METALLIC GLASS AND METALLIC GLASS THIN FILM COATING ON THE SHARPNESS ENHANCEMENT OF CUTTING TOOLS | 05-02-2013 |
20130325049 | REPLACEABLE MICRO-SURGICAL INSTRUMENT - The present invention provides a replaceable micro-surgical instrument which comprises a pull structure and a hollow tube attached to a grip. The hollow tube has a sleeve at one end with a U-type elastic element sliding in. The U-type elastic element includes a spring tension section and two opposite extending arms and the outer edge of each arm is against the inner wall of the sleeve. Two arms could move according to the pull structure to selectively extend out of the sleeve to be opened or pull back into the sleeve to be clip together. Particularly, there is a replaceable micro-surgical element set in the front-end of each arm, so when the micro-surgical element becomes blunt or broken, the doctor could only replace the micro-surgical element without replace a whole new instrument in order to reduce instrument cost, increase replacement rate, and maintain the quality of medical surgery. | 12-05-2013 |
20140353139 | APPLICATION OF METALLIC GLASS AND METALLIC GLASS THIN FILM COATING ON THE SHARPNESS ENHANCEMENT OF CUTTING TOOLS - A cutting tool having a metallic glass thin film (MGTF) coated thereon, a metallic glass cutting tool, and methods of fabricating the same are disclosed. The cutting tool having metallic glass thin film coated thereon comprises: a cutting element having a sharpened portion, and the cutting element is made of metal; and a metallic glass thin film coated on the cutting element, and the metallic glass is represented by the following formula 1 or formula 2, | 12-04-2014 |
Ruei-Je Tsai, Tainan City TW
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20090290446 | Memory Word-line Tracking Scheme - A word-line tracking system for a memory array having a plurality of memory cells, the word-line tracking system comprises a dummy row having substantially identical structure as one or more regular rows of the memory cells, the dummy row including a dummy word-line having a first and a second end at the opposite longitudinal ends of the dummy word-line, the first end being connected to a word-line driver, a self timing generator configured to receive a clock signal and generate a pulse signal in sync with the clock signal for the dummy word-line driver, the self timing generator having a first terminal for receiving a feedback signal to determine the falling edge of the pulse signal, a voltage-to-current converter connected to the second end of the dummy word-line, a current-to-voltage converter connected to the feedback terminal, and a wire connecting the voltage-to-current converter to the current-to-voltage converter. | 11-26-2009 |
Sen-Chun Tsai, Tainan City TW
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20120037673 | CLIP-ON PORTABLE CASE FOR CARRYING A PORTABLE ELECTRONIC DEVICE - A clip-on portable case, which can be clipped on an item of apparel to enable a user to easily and conveniently carry a portable electronic device with him, includes a clip-on mounting frame adapted to be clipped onto the item, and a holding frame having a gate member hinged to a backboard which is turnable relative to the mounting frame between unloading and loaded positions and which defines a receptacle area for the electronic device. A transmitting mechanism is disposed between the gate member and the mounting frame such that, when the backboard is turned from the loaded position to the unloading position, the gate member is swung from a closed position to an open position. | 02-16-2012 |
20120080865 | WHEEL-LOCKING SUSPENSION FORK ASSEMBLY FOR A BICYCLE - A wheel-locking suspension fork assembly for a bicycle includes first and second cylinder members coupled by a crosspiece disposed above a wheel, and a coupling joint turnably mounted on the first cylinder member and connected to a latch rod that is moved to be retained to a first catch unit on the first cylinder member so as to permit the wheel to freely rotate, or to a second catch unit on the second cylinder member so as to position between spokes of the wheel to lock the wheel. A key-operated lock is disposed in the coupling joint to be displaceable to a locking position where the latch rod is retained in the second catch unit. | 04-05-2012 |
Shau-Wei Tsai, Tainan City TW
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20110045551 | METHOD FOR PRODUCING AN OPTICALLY ACTIVE COMPOUND - A method for producing an optically active compound includes reacting a nucleophile with a mixture of R- and S-stereoisomers of an azolide substrate by enzyme-catalyzed kinetic resolution so as to produce the optically active compound, wherein the azolide substrate contains an azole group used as a leaving group and an acyl group directly bonded to a nitrogen atom of the azole group. | 02-24-2011 |
Shih-Hung Tsai, Tainan City TW
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20120225545 | Method of Fabricating Semiconductor Device - The present invention provides a method of fabricating a semiconductor device. A substrate is provided. A first region and a second region are defined on the substrate. A first interfacial layer, a sacrifice layer and a sacrifice gate layer are disposed on the first region. The sacrifice layer and the sacrifice gate layer are disposed on the second region of the substrate. Next, a first etching step is performed to remove the sacrifice gate layer in the first region and the second region. Then, a second etching step is performed to remove the sacrifice layer in the first region and the second region to expose the substrate of the second region. Lastly, a second interfacial layer is formed on the substrate of the second region. | 09-06-2012 |
20120241868 | METAL-GATE CMOS DEVICE - A method for fabricating a metal-gate CMOS device. A substrate having thereon a first region and a second region is provided. A first dummy gate structure and a second dummy gate structure are formed within the first region and the second region respectively. A first LDD is formed on either side of the first dummy gate structure and a second LDD is formed on either side of the second dummy gate structure. A first spacer is formed on a sidewall of the first dummy gate structure and a second spacer is formed on a sidewall of the second dummy gate structure. A first embedded epitaxial layer is then formed in the substrate adjacent to the first dummy gate structure. The first region is masked with a seal layer. Thereafter, a second embedded epitaxial layer is formed in the substrate adjacent to the second dummy gate structure. | 09-27-2012 |
20130045576 | METHOD FOR FABRICATING FIELD EFFECT TRANSISTOR WITH FIN STRUCTURE - A method for fabricating a field effect transistor with fin structure includes the following sequences. First, a substrate is provided and at least a fin structure is formed on the substrate. Then, an etching process is performed to round at least an upper edge in the fin structure. Finally, a gate covering the fin structure is formed. | 02-21-2013 |
20130052781 | Method of Forming Non-planar FET - A method of forming a Non-planar FET is provided. A substrate is provided. An active region and a peripheral region are defined on the substrate. A plurality of VSTI is formed in the active region of the substrate. A part of each VSTI is removed to expose a part of sidewall of the substrate. Then, a conductor layer is formed on the substrate which is then patterned to form a planar FET gate in the peripheral region and a Non-planar FET gate in the active region simultaneously. Last, a source/drain region is formed on two sides of the Non-planar FET gate. | 02-28-2013 |
20130056827 | NON-PLANAR SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF - A non-planar semiconductor structure includes a substrate, at least two fin-shaped structures, at least an isolation structure, and a plurality of epitaxial layers. The fin-shaped structures are located on the substrate. The isolation structure is located between the fin-shaped structures, and the isolation structure has a nitrogen-containing layer. The epitaxial layers respectively cover a part of the fin-shaped structures and are located on the nitrogen-containing layer. A non-planar semiconductor process is also provided for forming the semiconductor structure. | 03-07-2013 |
20130078818 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A substrate is provided. At least a fin-shaped structure is formed on the substrate and an oxide layer is formed on the substrate without the fin-shaped structure forming thereon. A thermal treatment process is performed to form a melting layer on at least a part of the sidewall of the fin-shaped structure. | 03-28-2013 |
20130095616 | METHOD FOR MANUFACTURING MULTI-GATE TRANSISTOR DEVICE - A method for manufacturing multi-gate transistor device includes providing a semiconductor substrate having a patterned semiconductor layer, a gate dielectric layer and a gate layer sequentially formed thereon, forming a multiple insulating layer sequentially having a first insulating layer and a second insulating layer and covering the patterned semiconductor layer and the gate layer, removing a portion of the multiple insulating layer to simultaneously form a first spacer around the gate layer and a second spacer around the patterned semiconductor layer, removing the second spacer to expose a portion of the first insulating layer covering the patterned semiconductor layer and simultaneously removing a portion of the first spacer to form a third spacer around the gate layer, and removing the exposed first insulating layer to expose the patterned semiconductor layer. | 04-18-2013 |
20130154012 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE - A manufacturing method for semiconductor device having metal gate includes providing a substrate having a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device having a first gate trench and the second semiconductor device having a second gate trench; sequentially forming a high dielectric constant (high-k) gate dielectric layer and a multiple metal layer on the substrate; forming a first work function metal layer in the first gate trench; performing a first pull back step to remove a portion of the first work function metal layer from the first gate trench; forming a second work function metal layer in the first gate trench and the second gate trench; and performing a second pull back step to remove a portion of the second work function metal layer from the first gate trench and the second gate trench. | 06-20-2013 |
20130200470 | SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME - A semiconductor structure and a method of fabricating the same comprising the steps of providing a substrate, forming at least one fin structure on said substrate, forming a gate covering said fin structure, forming a plurality of epitaxial structures covering said fin structures, performing a gate pullback process to reduce the critical dimension (CD) of said gate and separate said gate and said epitaxial structures, forming lightly doped drains (LDD) in said fin structures, and forming a spacer on said gate and said fin structures. | 08-08-2013 |
20130203230 | SEMICONDUCTOR PROCESS - A semiconductor process includes the following steps. A substrate is provided. An ozone saturated deionized water process is performed to form an oxide layer on the substrate. A dielectric layer is formed on the oxide layer. A post dielectric annealing (PDA) process is performed on the dielectric layer and the oxide layer. | 08-08-2013 |
20130228836 | NON-PLANAR SEMICONDUCTOR STRUCTURE - A non-planar semiconductor structure includes a substrate, at least two fin-shaped structures, at least an isolation structure, and a plurality of epitaxial layers. The fin-shaped structures are located on the substrate. The isolation structure is located between the fin-shaped structures, and the isolation structure has a nitrogen-containing layer. The epitaxial layers respectively cover a part of the fin-shaped structures and are located on the nitrogen-containing layer. Anon-planar semiconductor process is also provided for forming the semiconductor structure. | 09-05-2013 |
20130252387 | METAL-GATE CMOS DEVICE AND FABRICATION METHOD THEREOF - A method for fabricating a metal-gate CMOS device. A substrate having thereon a first region and a second region is provided. A first dummy gate structure and a second dummy gate structure are formed within the first region and the second region respectively. A first LDD is formed on either side of the first dummy gate structure and a second LDD is formed on either side of the second dummy gate structure. A first spacer is formed on a sidewall of the first dummy gate structure and a second spacer is formed on a sidewall of the second dummy gate structure. A first embedded epitaxial layer is then formed in the substrate adjacent to the first dummy gate structure. The first region is masked with a seal layer. Thereafter, a second embedded epitaxial layer is formed in the substrate adjacent to the second dummy gate structure. | 09-26-2013 |
20130302976 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device is provided. A first interfacial material layer is formed by a deposition process on a substrate. A dummy gate material layer is formed on the first interfacial material layer. The dummy gate material layer and the first interfacial material layer are patterned to form a stacked structure. An interlayer dielectric (ILD) layer is formed to cover the stacked structure. A portion of the ILD layer is removed to expose a top of the stacked structure. The stacked structure is removed to form a trench in the ILD layer. A second interfacial layer and a first high-k layer are conformally formed at least on a surface of the trench. A composite metal layer is formed to at least fill up the trench. | 11-14-2013 |
20140015056 | MULTI-GATE MOSFET AND PROCESS THEREOF - A multi-gate MOSFET includes a substrate, a dielectric layer and at least a fin-shaped structure. The substrate has a first area and a second area. The dielectric layer is only located in the substrate of the first area. At least a fin-shaped structure is located on the dielectric layer. Moreover, the present invention also provides a multi-gate MOSFET process forming said multi-gate MOSFET. | 01-16-2014 |
20140035066 | Non-Planar FET and Manufacturing Method Thereof - The present invention provides a non-planar FET which includes a substrate, a fin structure, a sub spacer, a gate, a dielectric layer and a source/drain region. The fin structure is disposed on the substrate. The sub spacer is disposed only on a middle sidewall of the fin structure. The gate is disposed on the fin structure. The dielectric layer is disposed between the fin structure and the gate. The source/drain region is disposed in the fin structure. The present invention further provides a method of forming the same. | 02-06-2014 |
20140077229 | SEMICONDUCTOR STRUCTURE - A non-planar semiconductor structure comprises a substrate, at least one fin structure on the substrate, a gate covering parts of the fin structures and part of the substrate such that the fin structure is divided into a channel region stacking with the gate and source/drain region at both sides of the gate, a plurality of epitaxial structures covering on the source/drain region of the fin structures, a recess is provided between the channel region of the fin structure and the epitaxial structure, and a spacer formed on the sidewalls of the gate and the epitaxial structures, wherein the portion of the spacer filling in the recesses is flush with the top surface of the epitaxial structures. | 03-20-2014 |
20140106557 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE HAVING METAL GATE - A manufacturing method for semiconductor device having metal gate includes providing a substrate having a first semiconductor device and a second semiconductor device formed thereon, the first semiconductor device having a first gate trench and the second semiconductor device having a second gate trench; sequentially forming a high dielectric constant (high-k) gate dielectric layer and a multiple metal layer on the substrate; forming a first work function metal layer in the first gate trench; performing a first pull back step to remove a portion of the first work function metal layer from the first gate trench; forming a second work function metal layer in the first gate trench and the second gate trench; and performing a second pull back step to remove a portion of the second work function metal layer from the first gate trench and the second gate trench. | 04-17-2014 |
20140191318 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR, METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF - A complementary metal oxide semiconductor field-effect transistor (MOSFET) includes a substrate, a first MOSFET and a second MOSFET. The first MOSFET is disposed on the substrate within a first transistor region and the second MOSFET is disposed on the substrate within a second transistor region. The first MOSFET includes a first fin structure, two first lightly-doped regions, two first doped regions and a first gate structure. The first fin structure includes a first body portion and two first epitaxial portions, wherein each of the first epitaxial portions is disposed on each side of the first body portion. A first vertical interface is between the first body portion and each of the first epitaxial portions so that the first-lightly doped region is able to be uniformly distributed on an entire surface of each first vertical interface. | 07-10-2014 |
20140199817 | METHOD FOR MANUFACTURING MULTI-GATE TRANSISTOR DEVICE - A method for manufacturing multi-gate transistor device includes providing a semiconductor substrate having a patterned semiconductor layer, a gate dielectric layer and a gate layer sequentially formed thereon, forming a multiple insulating layer sequentially having a first insulating layer and a second insulating layer and covering the patterned semiconductor layer and the gate layer, removing a portion of the multiple insulating layer to simultaneously form a first spacer around the gate layer and a second spacer around the patterned semiconductor layer, removing the second spacer to expose a portion of the first insulating layer covering the patterned semiconductor layer and simultaneously removing a portion of the first spacer to form a third spacer around the gate layer, and removing the exposed first insulating layer to expose the patterned semiconductor layer. | 07-17-2014 |
20140235043 | METHOD FOR FORMING FIN-SHAPED STRUCTURE - A method for forming a fin-shaped structure includes the following steps. A pad layer is formed on a substrate. A sacrificial pattern is formed on the pad layer. A spacer is formed on the pad layer beside the sacrificial pattern, wherein the ratio of the height of the spacer to the pad layer is larger than 5. The sacrificial pattern is removed. The layout of the spacer is transferred to the substrate to form at least a fin-shaped structure having a taper profile in the substrate. | 08-21-2014 |
20140256136 | METHOD FOR FORMING FIN-SHAPED STRUCTURES - The present invention provides a method for forming a fin structure comprising the following steps: first, a multiple-layer structure is formed on a substrate; then, a sacrificial pattern is formed on the multiple-layer structure, a spacer is formed on the sidewall of the sacrificial pattern and disposed on the multiple-layer structure, the sacrificial pattern is removed, the spacer is used as a cap layer to etch parts of the multiple-layer structure, and then the multiple-layer structure is used as a cap layer to etch the substrate and to form at least one fin structure in the substrate. | 09-11-2014 |
20140295660 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device is provided. A first interfacial material layer is formed by a deposition process on a substrate. A dummy gate material layer is formed on the first interfacial material layer. The dummy gate material layer and the first interfacial material layer are patterned to form a stacked structure. An interlayer dielectric (ILD) layer is formed to cover the stacked structure. A portion of the ILD layer is removed to expose a top of the stacked structure. The stacked structure is removed to form a trench in the ILD layer. A second interfacial layer and a first high-k layer are conformally foamed at least on a surface of the trench. A composite metal layer is formed to at least fill up the trench. | 10-02-2014 |
20150014808 | SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF - A fabrication method for a semiconductor structure at least includes the following steps. First, a pattern mask with a predetermined layout pattern is formed on a substrate. The layout pattern is then transferred to the underneath substrate so as to form at least a fin-shaped structure in the substrate. Subsequently, a shallow trench isolation structure is formed around the fin-shaped structure. Afterwards, a steam oxidation process is carried out to oxidize the fin-shaped structure protruding from the shallow trench isolation and to form an oxide layer on its surface. Finally, the oxide layer is removed completely. | 01-15-2015 |
20150017781 | METHOD OF FORMING SHALLOW TRENCH ISOLATION STRUCTURE - A method of forming a shallow trench isolation structure is disclosed. Hard mask patterns are formed on a substrate. A portion of the substrate is removed, using the hard mask patterns as a mask, to form first trenches in the substrate, wherein a fin is disposed between the neighboring first trenches. A filling layer is formed in the first trenches. A patterned mask layer is formed on the filling layer. A portion of the filling layer and a portion of the fins are removed, using the patterned mask layer as a mask, to form second trenches in the substrate. A first insulating layer is formed on the substrate filling in the second trenches. | 01-15-2015 |
20150064929 | METHOD OF GAP FILLING - A method of gap filling includes providing a substrate having a plurality of gaps formed therein. Then, an in-situ steam generation oxidation is performed to form an oxide liner on the substrate. The oxide liner is formed to cover surfaces of the gaps. Subsequently, a high aspect ratio process is performed to form an oxide protecting layer on the oxide liner. After forming the oxide protecting layer, a flowable chemical vapor deposition is performed to form an oxide filling on the oxide protecting layer. More important, the gaps are filled up with the oxide filling layer. | 03-05-2015 |
Shing-Fen Tsai, Tainan City TW
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20120240455 | SOLID HYDROGEN FUEL WITH INITIAL HEATING - An embodiment of the invention provides a solid hydrogen fuel with an initial heating mechanism, including: a solid hydrogen fuel; and a heating promoter disposed on at least one surface of the solid hydrogen fuel, wherein the heating promoter proceeds with an exothermal reaction when contacted with water. Another embodiment of the invention provides: a solid hydrogen fuel with an initial heating mechanism, including a solid hydrogen fuel; and an electrical heating element in contact with the solid hydrogen fuel. | 09-27-2012 |
Shuan-Chi Tsai, Tainan City TW
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20120188120 | METHOD AND APPARATUS FOR POSITIONING - A positioning method and a positioning apparatus are provided. In this positioning method, a differential global positioning system is used to calculate a double difference of satellite distance in connection with a reference station and a receiver station. A baseline vector pointing from the reference station to the receiver station is calculated according to the double difference of satellite distance and the cosine law. The baseline vector and the position of the reference station are used to calculate the position of the receiver station. Correction coefficients are obtained according to the position of the reference station, the position of the receiver station, and the current time. The position of the receiver station is corrected according to the correction coefficients and the length of the baseline vector. | 07-26-2012 |
Tien-Ju Tsai, Tainan City TW
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20130028299 | ADAPTIVE ETHERNET TRANSCEIVER WITH JOINT DECISION FEEDBACK EQUALIZER AND TRELLIS DECODER - An adaptive Ethernet transceiver is disclosed. A joint decision feedback equalizer (DFE) and Trellis decoder is configured to decode a receiving signal. A decoder control unit is configured to adaptively disable a portion of the joint DFE and Trellis decoder in a non-specified link speed mode. | 01-31-2013 |
20130028311 | RECOVERABLE ETHERNET RECEIVER - The present invention is directed to a recoverable Ethernet receiver. A joint decision feedback equalizer (DFE) and Trellis decoder is configured to decode a receiving signal to result in a received symbol, and configured to generate a check-idle value which is used to indicate an idle mode. A physical coding sublayer (PCS) block is configured to generate a seed value and a polarity characterization according to the received symbol, with the joint DFE and Trellis decoder generating the check-idle value according to the seed value and the polarity characterization. | 01-31-2013 |
20130028312 | JOINT DECISION FEEDBACK EQUALIZER AND TRELLIS DECODER - The present invention is directed to joint decision feedback equalizer (DFE) and Trellis decoder adaptable to an Ethernet transceiver. A Trellis coded modulation (TCM) decoder includes a one-dimensional branch metric unit (1D-BMU) configured to calculate 1D branch metrics; a four-dimensional branch metric unit (4D-BMU) configured to combine the 1D branch metrics to generate 4D branch metrics; an add-compare-select unit (ACSU) configured to perform add, compare and select (ACS) operations on the 4D branch metrics for each state to obtain path metrics; and a survivor memory unit (SMU) configured to store and keep track of symbols. A decision feedback unit (DFU) is coupled to receive the symbols from the SMU in order to estimate inter-symbol interference (ISI) quantity, which is then fed back to the 1D-BMU. | 01-31-2013 |
Ting-Yueh Tsai, Tainan City TW
Tong Cheng Tsai, Tainan City TW
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20090224213 | VARIABLE IMPEDANCE COMPOSITION - A variable impedance composition according to this aspect of the present invention comprises a conductive powder in an amount from 10% to 30% of the weight of the variable impedance composition, a semi-conductive power in an amount from 30% to 90% of the weight of the variable impedance composition, and an insulation adhesive in an amount from 3% to 50% of the weight of the variable impedance composition. According to one embodiment of the present invention, the variable impedance material presents a high resistance at a low applied voltage and a low resistance at a high applied voltage. As the variable impedance material is positioned in a gap between two conductors of an over-voltage protection device, the over-voltage protection device as a whole presents a high resistance to a low voltage applied across the gap and a low resistance to a high voltage applied across the gap. | 09-10-2009 |
20090231763 | OVER-VOLTAGE PROTECTION DEVICE - An over-voltage protection device comprises a substrate having a first surface and a second surface, a first nonrectangular conductor having a first protrusion positioned on the first surface of the substrate, a second nonrectangular conductor having a second protrusion positioned on the first surface of substrate, at least one alignment block positioned on the second surface, and a variable impedance material positioned between the first protrusion and the second protrusion. Preferably, the second protrusion faces the first protrusion to form an arcing path from the first protrusion to the second protrusion. | 09-17-2009 |
20090309074 | VARIABLE IMPEDANCE COMPOSITION - A variable impedance composition according to one aspect of the present invention comprises a high electro-magnetic permeability powder in an amount from 10% to 85% of the weight of the variable impedance composition, and an insulation adhesive in an amount from 10% to 30% of the weight of the variable impedance composition. The incorporation of high electro-magnetic permeability powder including carbonyl metal, such as carbonyl iron or carbonyl nickel, in the variable impedance composition can not only suppress the overstress voltage, but also dampen the transient current. In contrast to the conventional electrostatic discharge (ESD) device, the relatively high electro-magnetic permeability carbonyl metal powder can reduce arcing as well as lower the trigger voltage of the device. The high electro-magnetic permeability characteristics can also absorb the undesirable electro-magnetic radiation that causes corruption of signal and loss of data. | 12-17-2009 |
20120182118 | OVER-CURRENT PROTECTION DEVICE AND METHOD FOR MANUFACTURING THE SAME - An over-current protection device includes a conductive composite having a first crystalline fluorinated polymer, a plurality of particulates, a conductive filler, and a non-conductive filler, wherein the plurality of particulates include a second crystalline fluorinated polymer. The first crystalline fluorinated polymer has a crystalline melting temperature of between 150 and 190 degrees Celsius. The plurality of particulates including the second crystalline fluorinated polymer are disposed in the conductive composite, having a crystalline melting temperature of between 320 and 390 degrees Celsius and having a particulate diameter of from 1 to 50 micrometers. The conductive filler and the non-conductive filler are dispersed in the conductive composite. | 07-19-2012 |
20140209365 | OVER-CURRENT PROTECTION DEVICE AND CIRCUIT BOARD STRUCTURE CONTAINING THE SAME - An over-current protection device, which can be surface-mounted and stand upright on a circuit board and withstand 60 to 600 volts, comprises a PTC device, first and second electrodes. The PTC device is a laminated structure comprising first and second conductive layers and a PTC material layer. The first and second conductive layers are in physical contact with first and second planar surfaces of the PTC material layer, respectively. The first electrode is disposed on the first conductive layer. The second electrode is disposed on the second conductive layer and is separated from the first electrode. The first electrode, the second electrode and the PTC device commonly form an end surface which is substantially perpendicular to the first and second planar surfaces. The first electrode and the second electrode at the end surface serve as interfaces electrically connecting to the circuit board. | 07-31-2014 |
Tsao-Ching Tsai, Tainan City TW
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20120268973 | POWER REGULATING APPARATUS - Disclosed is a power regulating apparatus, which is connected between an AC power and a load, for supplying the regulated AC power to the load. The power regulating apparatus includes a first regulating means provided to regulate the input AC power source when the AC power is at a normal power level, and a second regulating means provided to transmit an electric power to the load from a power storage means when the AC power is at a power level lower than the normal power level. Thus, the power regulating apparatus is capable of providing the load with an expected high quality electric power in all cases of AC power variation. | 10-25-2012 |
Tsung-Hsun Tsai, Tainan City TW
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20120160272 | CLEANING METHOD OF SEMICONDUCTOR PROCESS - The present invention is to provide a cleaning method to a process for fabricating a semiconductor. The method comprises steps as follows: A semiconductor substrate is first provided. An atomized spray are then continually supplied for a first time interval to clean the semiconductor substrate; and a water film is formed on the surface of the semiconductor substrate at or before a start point of the first time interval to buffer the impact imposed by the atomized spray, wherein the water film is preserved for a second time interval at least partially overlaps the first time interval. | 06-28-2012 |
Tsung-Meng Tsai, Tainan City TW
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20110043750 | SEAMLESS BIFOCAL LENS - A seamless bifocal lens comprises a plain glass portion, and a near vision region molded integrally with and protruding from a lower part of the plain glass portion. The near vision region has a central part, a border connected to the plain glass portion and surrounding the central part, and a protruding surface that protrudes gradually from the border to the central part. The protruding surface has a thickness that, increases from the border to the central part. | 02-24-2011 |
20110157542 | EYEGLASSES HAVING A TEMPLE MOUNTING STRUCTURE - A pair of eyeglasses include a lens frame unit having a pair of lateral sides, a pair of temples, and a pair of pivot connection units. Each pivot connection unit rotatably couples a corresponding one of the temples to a corresponding one of the lateral sides of the lens frame unit. Each of the pivot connection units includes a coupling seat coupled to the corresponding one of the lateral sides of the lens frame unit, and a pivoting section formed on one end of the corresponding one of the temples. Each pivot connection unit further includes an axle formed on one of the pivoting section and the coupling seat and extending along a horizontal pivot axis. The other one of the coupling seat and the pivoting section is formed with an axle opening through which the axle is rotatably inserted. | 06-30-2011 |
Tsung-Pei Tsai, Tainan City TW
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20120101224 | LIQUID CRYSTAL ALIGNMENT AGENT, AND LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY ELEMENT FORMED FROM THE LIQUID CRYSTAL ALIGNMENT AGENT - A liquid crystal alignment agent includes a polymer and an organic solvent for dissolving the polymer. The polymer is obtained by subjecting a diamine composition and a tetracarboxylic dianhydride compound to a polymerization reaction. The diamine composition includes a first diamine compound, a second diamine compound, and a third diamine compound as defined in the specification. | 04-26-2012 |
20120162588 | LIQUID CRYSTAL ALIGNMENT AGENT, AND LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY ELEMENT FORMED FROM THE LIQUID CRYSTAL ALIGNMENT AGENT - Disclosed is a liquid crystal alignment agent which includes: a polymer obtained by subjecting a diamine compound and a tetracarboxylic dianhydride compound to a polymerization reaction; an epoxy group containing compound; and a curing promoter. The curing promoter is at least one compound selected from secondary amines, tertiary amines, quaternary ammonium compounds, organic phosphines, imidazoles, and tetraphenyl borates, and is in an amount ranging from 0.5 to 10 parts by weight based on 100 parts by weight of the polymer. A liquid crystal alignment film formed from the liquid crystal alignment agent and a liquid crystal display element including the liquid crystal alignment film are also disclosed. | 06-28-2012 |
20120172542 | Liquid Crystal (LC) Alignment Agent, LC Alignment Film And LC Display Device Having Thereof - A liquid crystal (LC) alignment agent is disclosed, which comprises polymer (A), tertiary hydramine (B) and epoxy group-containing compound (C). The LC alignment agent is added with a tertiary hydramine (B) and has an epoxy value of 0.065 to 0.900. The LC alignment agent can be employed to form a LC alignment film for enhancing the resulted LC alignment film with better rubbing resistance. A LC display (LCD) device that uses the LC alignment film has better voltage holding ratio (VHR) and process stability. | 07-05-2012 |
20130053513 | LIQUID CRYSTAL ALIGNMENT AGENT, AND LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY ELEMENT FORMED FROM THE LIQUID CRYSTAL ALIGNMENT AGENT - A liquid crystal alignment agent includes a polymer composition (A) and a solvent (B) for dispersing the polymer composition (A). The polymer composition (A) is obtained by subjecting a diamine component (a) and a tetracarboxylic dianhydride component (b) to a polymerization reaction. The diamine component (a) includes at least one diamine compound (a-1) having a dipole moment up to 2.8D. | 02-28-2013 |
20130281618 | LIQUID CRYSTAL ALIGNMENT AGENT, AND LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY ELEMENT FORMED FROM THE LIQUID CRYSTAL ALIGNMENT AGENT - A liquid crystal alignment agent including a polymer composition and a solvent. The polymer composition is obtained by subjecting a mixture including a tetracarboxylic dianhydride component, a multi-amine component of formula (I) defined herein, and a diamine component to a reaction. The diamine component includes a diamine compound of formula (II) defined herein. | 10-24-2013 |
20140024753 | LIQUID CRYSTAL ALIGNMENT AGENT, LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY ELEMENT - A liquid crystal alignment agent contains a polymer and a solvent. The polymer is obtained by subjecting a mixture including a tetracarboxylic dianhydride component and a diamine component to a reaction. The diamine component includes a diamine compound of formula (I) defined herein, a benzimidazole-group-containing diamine compound, and a diamine compound other than the diamine compound of formula (I) and the benzimidazole-group-containing diamine compound. The liquid crystal alignment agent has superior processing stability, and a liquid crystal display element made from the aforesaid liquid crystal alignment agent has superior reliability. | 01-23-2014 |
20140350179 | LIQUID CRYSTAL ALIGNMENT AGENT, LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY ELEMENT HAVING THEREOF - The present invention relates to a liquid crystal alignment agent, a liquid crystal alignment film made by the liquid crystal alignment agent and a liquid crystal display element having the liquid crystal alignment film. The liquid crystal alignment agent includes a polymer composition (A) and a solvent (B). The polymer composition (A) is synthesized by reacting a mixture that includes a tetracarboxylic dianhydride component (a) and a diamine component (b). The aforementioned liquid crystal alignment agent has a better long-term printability. | 11-27-2014 |
20150031829 | LIQUID CRYSTAL ALIGNMENT AGENT, LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY ELEMENT HAVING THEREOF - The present invention relates to a liquid crystal alignment agent, a liquid crystal alignment film made by the liquid crystal alignment agent and a liquid crystal display element having the liquid crystal alignment film. The liquid crystal alignment agent includes a polymer (A) and a solvent (B). The polymer (A) is synthesized by reacting a mixture that includes a tetracarboxylic dianhydride compound (a) and a diamine compound (b). According to the specific diamine compound (b) and an amount of the same, the aforementioned liquid crystal alignment agent has better pretilt angle stability. | 01-29-2015 |
20150080528 | LIQUID CRYSTAL ALIGNMENT AGENT, LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY ELEMENT HAVING THEREOF - The present invention relates to a liquid crystal alignment agent, a liquid crystal alignment film made by the liquid crystal alignment agent and a liquid crystal display element having the liquid crystal alignment film. The liquid crystal alignment agent includes a polymer composition (A) and a solvent (B). The polymer composition (A) is synthesized by reacting a mixture that includes a tetracarboxylic dianhydride component (a) and a diamine component (b). The aforementioned liquid crystal alignment agent has a better process stability, and the liquid crystal alignment film made by the liquid crystal alignment agent could improve the reliability of the liquid crystal display element. | 03-19-2015 |
Tzong-Yow Tsai, Tainan City TW
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20100260211 | All-fiber staturable absorber Q-switched laser and method for producing staturable absorber Q-switched pulse - An all-fiber saturable absorber Q-switched laser and the method for producing saturable absorber Q-switched pulses are provided. By locating a saturable absorber fiber in the intensity-enhanced section of a ring resonator, the Q-switched pulses are produced and enhanced. The present application is advantageous in the simple design and effective cost, and is applicable for a variety of fiber-type laser materials. | 10-14-2010 |
20110158267 | Pulsed laser system with a thulium-doped saturable absorber Q-switch - A pulsed laser system having a Tm | 06-30-2011 |
20120069859 | LOOP OPTICAL SYSTEM AND ALL-FIBER Q-SWITCHED LASER USING THE SAME - An all-fiber Q-switched laser including a laser resonant cavity and a loop optical system is provided. The loop optical system is disposed inside the laser resonant cavity, and the all-fiber Q-switched laser generates a pulsed laser through the loop optical system. The loop optical system includes a plurality of wavelength-division elements and a saturable absorber. One of the wavelength-division elements is coupled with another one of the wavelength-division elements through corresponding first connecting fibers. Two ends of the saturable absorber are respectively coupled to second connecting fibers of the wavelength-division elements, wherein the saturable absorber and the two wavelength-division elements form a loop such that an auxiliary unsaturated light source can be transmitted in the loop. | 03-22-2012 |
20120147909 | FIBER LASER SYSTEM - A fiber laser system including a laser pumping source, first and second wavelength reflectors, first and second gain fibers, and first and second long wavelength reflectors is provided. The laser pumping source is adapted to emit a pumping beam. The first wavelength reflector is coupled to the laser pumping source. The first gain fiber is coupled between the first and the second wavelength reflectors. The first long wavelength reflector is coupled between the first gain fiber and the second wavelength reflector. The second long wavelength reflector is coupled between the first long wavelength reflector and the second wavelength reflector. The second gain fiber is coupled between the first and the second long wavelength reflectors. The diameter of the core of the first gain fiber is greater than the diameter of the core of the second gain fiber. | 06-14-2012 |
20130016422 | Q-switching-induced Gain-switched Erbium Pulse Laser SystemAANM TSAI; Tzong-YowAACI Tainan CityAACO TWAAGP TSAI; Tzong-Yow Tainan City TW - The present invention relates to a Q-switching-induced gain-switched erbium pulse laser system, capable of generating erbium laser pulses within the 2.5 μm to 3.0 μm wavelength region, by means of Q-switching operation at 1.6 μm. At first, an Er | 01-17-2013 |
Yao-Cheng Tsai, Tainan City TW
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20090245544 | Acoustoeletric transformation chip for ribbon microphone - An acoustoelectric transformation chip for a ribbon microphone includes a diaphragm that has a vibrating region and two fixing regions disposed on two opposite sides of the vibrating region, and a voice coil film formed on the diaphragm. The voice coil film includes two rectangular voice coils, each of which has a plurality of first and second connection segments parallel to a direction of a magnetic field. A plurality of first and second transverse segments are perpendicular to the first and second connection segments and are connected between the first and second connection segments. The second transverse segments of each voice coil are disposed on one of the fixing regions. The first transverse segments of the two voice coils are disposed in the vibrating region. | 10-01-2009 |
Yao-Tsang Tsai, Tainan City TW
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20130068276 | SOLAR BATTERY MODULE AND MANUFACTURING METHOD THEREOF - A solar battery module includes a substrate, a plurality of first striped electrodes separately formed on the substrate, a plurality of striped photoelectric transducing layers respectively formed on the corresponding first striped electrode and the substrate wherein parts of the first striped electrode are exposed, a plurality of second striped electrodes respectively formed on the corresponding striped photoelectric transducing layer, and a plurality of conductive layers respectively formed on a side of the corresponding second striped electrode and the first striped electrode adjacent to the side, and not contacting the other second striped electrode. | 03-21-2013 |
20130074772 | THIN-FILM SOLAR CELL MANUFACTURING SYSTEM - A manufacturing system for thin-film solar cell is disclosed in the present invention. The manufacturing system includes a chamber, a boat disposed inside the chamber, a solid substrate with a first precursor which has a first I B group and III A group, and a flexible substrate with a second precursor which has a second I B group and III A group, a gas controller for pouring reactant gas, and a heater for increasing the temperature of the chamber, so that the reactant gas reacts to the first precursor and the second precursor to form a chalcopyrite structure. | 03-28-2013 |
20130098421 | FLEXIBLE SOLAR BATTERY MODULE AND RELATED MANUFACTURING METHOD - A flexible solar battery module includes a flexible insulating base and a plurality of solar batteries separately disposed on the flexible insulating base. The solar battery includes a substrate disposed on the flexible insulating base, a first electrode disposed on the substrate, a photoelectric transducing layer disposed on the first electrode and exposing parts of the first electrode, and a second electrode disposed on the photoelectric transducing layer. The flexible solar battery module further includes an insulating layer disposed on the exposed first electrode of each solar battery and the exposed flexible insulating base between the adjacent solar batteries, and an auxiliary electrode disposed on the second electrode of each solar battery and the exposed first electrode of the adjacent solar battery for setting the plurality of solar batteries in a series connection. | 04-25-2013 |
20130130432 | RAPID THERMAL PROCESSING SYSTEM AND SULFIDATION METHOD THEREOF - A rapid thermal processing system includes a rapid thermal processing furnace, a back electrode substrate, and a cover. The rapid thermal processing furnace includes a reaction chamber and a heating device. The heating device is capable of generating heat energy. The back electrode substrate is adapted to dispose in the reaction chamber and has a precursor layer and a selenium layer formed on the precursor layer. The cover is disposed at a position corresponding to the selenium layer on the back electrode substrate and has a sulfur in solid form formed thereon, so as to make the sulfur in solid form opposite to the selenium layer. After the sulfur in solid form absorbs the heat energy generated by the heating device, the sulfur in solid form reacts with the selenium layer and the precursor layer to form a photoelectric transducing layer. | 05-23-2013 |
20130133720 | SOLAR BATTERY MODULE AND MANUFACTURING METHOD THEREOF - A solar battery module includes a substrate, striped metal electrode layers formed alternately on the substrate along a first direction, striped photoelectric transducing layers, striped transparent electrode layers, and electrode lines. Each striped photoelectric transducing layer is formed on the striped metal electrode layer and the substrate along the first direction. Each striped transparent electrode layer is formed on the striped metal electrode layer and the striped photoelectric transducing layer along the first direction. The striped transparent electrode layers and the striped metal electrode layers are in series connection along a second direction. The electrode lines are formed alternately on each striped transparent electrode layer or between each striped photoelectric transducing layer and each striped transparent electrode layer along the second direction. A width of each electrode line is less than an interval between the striped transparent electrode layer and the adjacent striped metal electrode layer. | 05-30-2013 |
Yao Tsung Tsai, Tainan City TW
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20120275770 | Systems and Methods of Editing Media Data - Systems and methods of editing media data are described. One such method includes displaying a representation of a first and second media data instances. Each media data instance is displayed along a corresponding one of a plurality of lines at a corresponding one of a plurality of positions. The corresponding position is chosen in accordance with a capture time associated with the media data instances, such that when the media data instances have overlapping capture times the media data instances with overlapping capture times are displayed on different ones of the lines. The method further includes determining an overlap region for the first media and second media data instances having overlapping capture times. The method further includes combining a plurality of frames within the overlap region of the first media data instance and the second media data instance according to an overlap style to produce an output media data. | 11-01-2012 |
Yu Tsai, Tainan City TW
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20120262641 | LIQUID CRYSTAL DISPLAY - An embodiment of this invention provides a liquid crystal display, which comprises a thin-film transistor substrate, an upper substrate, and a liquid crystal between the two substrates. The thin-film transistor substrate comprises data lines, gate lines, and a pixel array defined by the data lines and gate lines, characterized in that each data line connects to two columns of pixel, and another one or two columns of pixel are interposed between the connected two columns of pixel. | 10-18-2012 |
Zen-Jay Tsai, Tainan City TW
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20120012938 | METHOD OF MANUFACTURING COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE - A method of manufacturing a CMOS device includes providing a substrate having a first region and a second region; forming a first gate structure and a second gate structure, each of the gate structures comprising a sacrificial layer and a hard mask layer; forming a patterned first protecting layer covering the first region and a first spacer on sidewalls of the second gate structure; performing an etching process to form first recesses in the substrate; performing a SEG process to form epitaxial silicon layers in each first recess; forming a patterned second protecting layer covering the second region; and performing a dry etching process with the patterned second protecting layer serving as an etching mask to etch back the patterned first protecting layer to form a second spacer on sidewalls of the first gate structure and to thin down the hard mask layer on the first gate structure. | 01-19-2012 |
20130137256 | SEMICONDUCTOR PROCESS - A semiconductor process is provided. The prior steps include: a first gate including a first cap layer and a second gate including a second cap layer are formed on a substrate. A hard mask layer is formed to cover the first gate and the second gate. The material of the hard mask layer is different from the material of the first cap layer and the second cap layer. The hard mask layer is removed entirely after a lithography process and an etching process are performed. The following steps include: a material is formed to entirely cover the first gate and the second gate. The material, the first gate and the second gate are etched back to make the first gate and the second gate have the same level and expose layers in both of them. | 05-30-2013 |
20130234216 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND PMOS DEVICE FABRICATED BY THE METHOD - A method for fabricating a semiconductor device is described. A gate layer, a C-doped first protective layer and a hard mask layer are formed on a substrate and then patterned to form a first stack in a first area and a second stack in a second area. A second protective layer is formed on the sidewalls of the first and the second stacks. A blocking layer is formed in the first area and a first spacer formed on the sidewall of the second protective layers on the sidewall of the second stack in the second area. A semiconductor compound is formed in the substrate beside the first spacer. The blocking layer and the first spacer are removed. The hard mask layer in the first stack and the second stack is removed. | 09-12-2013 |