Tsai, NY
Gow-Jen Tsai, Airmont, NY US
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20100028952 | FERMENTATION AND PURIFICATION OF ACTINOMADURA CHROMOPROTEIN AND RELATED SPECIES - The present invention provides methods for production and purification of active chromoproteins produced by | 02-04-2010 |
Han-Mou Tsai, Manhasset, NY US
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20090274683 | ADAMTS13 GENES AND PROTEINS AND VARIANTS, AND THERAPEUTIC COMPOSITIONS AND METHODS OF UTILIZING THE SAME - The present invention relates to a disintegrin and metalloproteinase containing thrombospondin 1-like domains (ADAMTS) and in particular to a novel ADAMTS13 protease and to nucleic acids encoding ADAMTS13 proteases. The present invention encompasses both native and recombinant wild-type forms of ADAMTS13, as well as mutant and variant forms including fragments, some of which posses altered characteristics relative to the wild-type ADAMTS13. The present invention also relates to methods of using ADAMTS13, including for treatment of TTP. The present invention also relates to methods for screening for the presence of TTP. The present invention further relates to methods for developing anticoagulant drugs based upon ADAMTS13. | 11-05-2009 |
Han-Wou Tsai, Manhasset, NY US
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20090304672 | ADAMTS13 GENES AND PROTEINS AND VARIANTS, AND THERAPEUTIC COMPOSITIONS AND METHODS OF UTILIZING THE SAME - The present invention relates to a disintegrin and metalloproteinase containing thrombospondin 1-like domains (ADAMTS) and in particular to a novel ADAMTS13 protease and to nucleic acids encoding ADAMTS13 proteases. The present invention encompasses both native and recombinant wild-type forms of ADAMTS13, as well as mutant and variant forms including fragments, some of which posses altered characteristics relative to the wild-type ADAMTS13. The present invention also relates to methods of using ADAMTS13, including for treatment of TTP. The present invention also relates to methods for screening for the presence of TTP. The present invention further relates to methods for developing anticoagulant drugs based upon ADAMTS13. | 12-10-2009 |
Hsin-Yi Sherry Tsai, Rochester, NY US
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20150189761 | METHOD FOR DEPOSITING AND CURING NANOPARTICLE-BASED INK - A method for forming a conductive pattern on a substrate deposits, onto a surface of the substrate, a nanoparticle ink that comprises nanoparticles of a conductive or semiconductor material, at least one low boiling point solvent, and from 0.1 weight % to 50 weight % of a high boiling point solvent. The method forms a partially wet patterned substrate by drying the deposited nanoparticle ink to a wetness range between about 3 weight % and 8 weight % solvent. The method directs a patterned illumination of laser light to cure the deposited ink pattern on the partially wet patterned substrate. | 07-02-2015 |
Hsinyu Tsai, White Plains, NY US
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20130143769 | Graphene Nanomesh Based Charge Sensor - A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene in a periodic way to create a graphene nanomesh with a patterned array of multiple holes, passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh, and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule. | 06-06-2013 |
20140138771 | LOCAL TAILORING OF FINGERS IN MULTI-FINGER FIN FIELD EFFECT TRANSISTORS - A cluster of semiconductor fins is formed on an insulator layer. A masking material layer is formed over the array of semiconductor fins such that spaces between adjacent semiconductor fins are filled with the masking material layer. A photoresist layer is applied over the masking material layer, and is lithographically patterned. The masking material layer is etched to physically expose a sidewall surface of a portion of an outermost semiconductor fin in regions not covered by the photoresist layer. A recessed region is formed in the insulator layer such that an edge of the recessed region is formed within an area from which a portion of the semiconductor fin is removed. The photoresist layer and the masking material layer are removed. Within the cluster, a region is provided that has a lesser number of semiconductor fins than another region in which semiconductor fins are not etched. | 05-22-2014 |
20140141578 | LOCAL TAILORING OF FINGERS IN MULTI-FINGER FIN FIELD EFFECT TRANSISTORS - A cluster of semiconductor fins is formed on an insulator layer. A masking material layer is formed over the array of semiconductor fins such that spaces between adjacent semiconductor fins are filled with the masking material layer. A photoresist layer is applied over the masking material layer, and is lithographically patterned. The masking material layer is etched to physically expose a sidewall surface of a portion of an outermost semiconductor fin in regions not covered by the photoresist layer. A recessed region is formed in the insulator layer such that an edge of the recessed region is formed within an area from which a portion of the semiconductor fin is removed. The photoresist layer and the masking material layer are removed. Within the cluster, a region is provided that has a lesser number of semiconductor fins than another region in which semiconductor fins are not etched. | 05-22-2014 |
20140148012 | TONE INVERSION OF SELF-ASSEMBLED SELF-ALIGNED STRUCTURES - A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch. | 05-29-2014 |
20140353761 | MULTI-ORIENTATION SEMICONDUCTOR DEVICES EMPLOYING DIRECTED SELF-ASSEMBLY - A template material layer is deposited over a substrate, and is patterned with at least two trenches having different lengthwise directions. An array of polymer lines are formed by directed self-assembly of a copolymer material and a selective removal of one type of polymer material relative to another type within each trench such that the lengthwise direction of the polymer lines are parallel to the lengthwise sidewalls of the trench. The patterns in the arrays of polymer lines are transferred into an underlying material layer to form arrays of patterned material structures. The arrays of patterned material structures may be arrays of semiconductor material portion, or may be arrays of gate electrodes. An array of patterned material structures may be at a non-orthogonal angle with respect to an array of underlying material portions or with respect to an array of overlying material portions to be subsequently formed. | 12-04-2014 |
20140353762 | MULTI-ORIENTATION SEMICONDUCTOR DEVICES EMPLOYING DIRECTED SELF-ASSEMBLY - A template material layer is deposited over a substrate, and is patterned with at least two trenches having different lengthwise directions. An array of polymer lines are formed by directed self-assembly of a copolymer material and a selective removal of one type of polymer material relative to another type within each trench such that the lengthwise direction of the polymer lines are parallel to the lengthwise sidewalls of the trench. The patterns in the arrays of polymer lines are transferred into an underlying material layer to form arrays of patterned material structures. The arrays of patterned material structures may be arrays of semiconductor material portion, or may be arrays of gate electrodes. An array of patterned material structures may be at a non-orthogonal angle with respect to an array of underlying material portions or with respect to an array of overlying material portions to be subsequently formed. | 12-04-2014 |
20140353800 | TONE INVERSION OF SELF-ASSEMBLED SELF-ALIGNED STRUCTURES - A stack of an organic planarization layer (OPL) and a template layer is provided over a substrate. The template layer is patterned to induce self-assembly of a copolymer layer to be subsequently deposited. A copolymer layer is deposited and annealed to form phase-separated copolymer blocks. An original self-assembly pattern is formed by removal of a second phase separated polymer relative to a first phase separated polymer. The original pattern is transferred into the OPL by an anisotropic etch, and the first phase separated polymer and the template layer are removed. A spin-on dielectric (SOD) material layer is deposited over the patterned OPL that includes the original pattern to form SOD portions that fill trenches within the patterned OPL. The patterned OPL is removed selective to the SOD portions, which include a complementary pattern. The complementary pattern of the SOD portions is transferred into underlying layers by an anisotropic etch. | 12-04-2014 |
20150233900 | Graphene Nanomesh Based Charge Sensor - A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. The method includes generating multiple holes in graphene to create a graphene nanomesh with a patterned array of multiple holes; passivating an edge of each of the multiple holes of the graphene nanomesh to allow for functionalization of the graphene nanomesh; and functionalizing the passivated edge of each of the multiple holes of the graphene nanomesh with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, wherein the receptor is a molecule that chemically binds to the target molecule, irrespective of the size of the target molecule. | 08-20-2015 |
20150276726 | Graphene Nanomesh Based Charge Sensor - A graphene nanomesh based charge sensor and method for producing a graphene nanomesh based charge sensor. A graphene nanomesh based charge sensor includes a graphene nanomesh with a patterned array of multiple holes created by generating multiple holes in graphene in a periodic way, wherein: an edge of each of the multiple holes of the graphene nanomesh is passivated; and the passivated edge of each of the multiple holes of the graphene nanomesh is functionalized with a chemical compound that facilitates chemical binding of a receptor of a target molecule to the edge of one or more of the multiple holes, allowing the target molecule to bind to the receptor, causing a charge to be transferred to the graphene nanomesh to produce a graphene nanomesh based charge sensor for the target molecule. | 10-01-2015 |
20150325470 | Sublithographic Kelvin Structure Patterned With DSA - In one aspect, a DSA-based method for forming a Kelvin-testable structure includes the following steps. A guide pattern is formed on a substrate which defines i) multiple pad regions of the Kelvin-testable structure and ii) a region interconnecting two of the pad regions on the substrate. A self-assembly material is deposited onto the substrate and is annealed at a temperature/duration sufficient to cause it to undergo self-assembly to form a self-assembled pattern on the substrate, wherein the self-assembly is directed by the guide pattern such that the self-assembled material in the region interconnecting the two pad regions forms multiple straight lines. A pattern of the self-assembled material is transferred to the substrate forming multiple lines in the substrate, wherein the pattern of the self-assembled material is configured such that only a given one of the lines is a continuous line between the two pad regions on the substrate. | 11-12-2015 |
20150332958 | Sublithographic Kelvin Structure Patterned With DSA - In one aspect, a DSA-based method for forming a Kelvin-testable structure includes the following steps. A guide pattern is formed on a substrate which defines i) multiple pad regions of the Kelvin-testable structure and ii) a region interconnecting two of the pad regions on the substrate. A self-assembly material is deposited onto the substrate and is annealed at a temperature/duration sufficient to cause it to undergo self-assembly to form a self-assembled pattern on the substrate, wherein the self-assembly is directed by the guide pattern such that the self-assembled material in the region interconnecting the two pad regions forms multiple straight lines. A pattern of the self-assembled material is transferred to the substrate forming multiple lines in the substrate, wherein the pattern of the self-assembled material is configured such that only a given one of the lines is a continuous line between the two pad regions on the substrate. | 11-19-2015 |
Hsinyu Tsai, Armonk, NY US
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20140220495 | Resist Performance for the Negative Tone Develop Organic Development Process - A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites. One-step simultaneous base treatment and solvent development employs a composition comprising a mix of the basic compound and solvent developer. | 08-07-2014 |
20150309415 | RESIST PERFORMANCE FOR THE NEGATIVE TONE DEVELOP ORGANIC DEVELOPMENT PROCESS - A process and composition for negative tone development comprises providing a photoresist film that generates acidic sites. Irradiating the photoresist film patternwise provides an irradiated film having exposed and unexposed regions where the exposed regions comprise imaged sites. Baking the irradiated film at elevated temperatures produces a baked-irradiated film comprising the imaged sites which after irradiating, baking, or both irradiating and baking comprise acidic imaged sites. Treating the baked-irradiated film with a liquid, gaseous or vaporous weakly basic compound converts the acidic imaged sites to a base treated film having chemically modified acidic imaged sites. Applying a solvent developer substantially dissolves regions of the film that have not been exposed to the radiant energy, where the solvent developer comprises a substantial non-solvent for the chemically modified acidic imaged sites. One-step simultaneous base treatment and solvent development employs a composition comprising a mix of the basic compound and solvent developer. | 10-29-2015 |
Irving Tsai, New York, NY US
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20120120430 | Method and apparatus for linking designated portions of a received document image with an electronic address - A method and apparatus for receiving document images including portions linked to one or more electronic addresses. The linked portion of the document is identified using a predetermined visual attribute, such as bold-face text, or delimiters to mark the portion. The document image is then transmitted using, e.g., existing apparatus for transmitting images, such as a facsimile machine. An electronic address associated with the identified portion of the document is also transmitted using existing techniques, such as by touch-tone telephone. The address may be a voice telephone number, facsimile telephone number, World Wide Web address, or any other address with which communication can be established. At the receiving end, both the document image and electronic address are received. Pattern matching is performed on the document image to identify the portion with the predetermined attribute as a linked portion. The received electronic address is then correlated with the linked portion. When the document image is displayed on, e.g., a computer screen, the linked portion is visually identified so that the recipient can access the electronic address by, e.g., clicking on the portion using a mouse. Communication may then be initiated by the recipient with the entity associated with the electronic address. | 05-17-2012 |
Irving Tsai, Nyc, NY US
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20090186639 | Telephone method and apparatus - A telephone and telephone answering apparatus and method are described for using secondary information embedded in audio passages included in phone calls. The telephone and telephone answering device monitors received calls to automatically detect for the presence of embedded secondary information. Some embodiments merely receive, automatically monitor for the presence of, and use secondary information. Other embodiments are also capable of generating and of embedding secondary information into audio passages. | 07-23-2009 |
Joyce Tsai, New York, NY US
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20090264522 | METHODS OF TREATING CENTRAL NERVOUS SYSTEM DISORDERS WITH A LOW DOSE COMBINATION OF ESCITALOPRAM AND BUPROPION - The present invention relates to a method of treating a central nervous system disorder, such as a mood disorder (e.g., major depressive disorder) or an anxiety disorder (e.g., general anxiety disorder, social anxiety disorder, post traumatic stress disorder, and panic disorder) with a low dose combination of escitalopram and bupropion. | 10-22-2009 |
Kuei-Lin Tsai, Flushing, NY US
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20080202705 | Cordless Blinds with Secondary Blind Adjustment Means - A cordless window covering system with a secondary mechanism to adjust the position of the window covering, to allow manual adjustment of the window covering when the bottom bar is out of reach by hand. In one embodiment, the secondary adjustment system includes a hooked hand tool that engages with a loop in the bottom bar. In another embodiment, the secondary adjustment system includes an exposed beaded corded coupled to the internal mechanisms of the system, so that pulling of beaded cord causes internal mechanisms to move and adjust the position of the window covering. | 08-28-2008 |
Kunju Tsai, Forest Hills, NY US
Louis Hsuante Tsai, Huntington, NY US
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20130213838 | ADJUSTABLE HOLDER FOR TABLET COMPUTER AND COVER THEREFOR - A holder for electronic devices such as tablet computers is disclosed, the holder being made of a semi-stiff board (i.e., “PE” board or the like), covered by a soft fabric, vinyl, leather or the like. The holder includes four corner gripping devices which have a unique dimension and configuration which facilitates gripping each respective of a generally rectangular shaped electronic device for snugly retaining the device. Each corner gripping device is attached to an elastic band which may be woven or knitted. The holder is in turn attached, preferably by stitching to a foldable cover in a manner which permits the holder to pivot with respect to the cover so as to prop the holder view, of the electronic device. | 08-22-2013 |
Roger Y. Tsai, Yorktown Heights, NY US
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20090171644 | CA RESISTANCE VARIABILITY PREDICTION METHODOLOGY - A methodology for obtaining improved prediction of CA resistance in electronic circuits and, particularly, an improved CA resistance model adapted to capture larger than anticipated “out of spec” regime. In one embodiment, a novel bucketization scheme is implemented that is codified to provide a circuit designer with considerably better design options for handling large CA variability as seen through the design manual. The tools developed for modeling the impact of CA variable resistance phenomena provide developers with a resistance model, such as conventionally known, modified with a new CA model Basis including a novel CA intrinsic resistance model, and, a novel CA layout bucketization model. | 07-02-2009 |
Stan Tsai, Clifton Park, NY US
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20160033958 | ENDPOINT DETERMINATION USING INDIVIDUALLY MEASURED TARGET SPECTRA - Disclosed are approaches for determining a processing endpoint using individually measured target spectra. More specifically, one approach includes: measuring a white light (WL) target spectra of a semiconductor device on an individual wafer prior to formation of a polishing/planarization material; inputting the WL target spectra to a WL endpoint algorithm of the semiconductor device following formation of the polishing/planarization material; and determining, using the WL endpoint algorithm, the processing endpoint of the polishing/planarization material of the semiconductor device. In another approach, the endpoint measurement process comprises receiving spectra reflected from the semiconductor device during polishing, and comparing the spectra to the WL target spectra, which is previously stored within a storage device. As such, WL target spectra are measured “as is” (e.g., without simplifications, generalizations, assumptions, etc.) for each wafer to reduce complications inherent with the use of an uncertain and/or estimated target. | 02-04-2016 |
Tak Mou T. Tsai, New York, NY US
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20150117162 | Time Teaching Watch and Method - A watch display and a method of displaying time and date on a watch face. The watch face has an outer portion with twelve on/off lights spaced around the outer portion of the watch face showing numbers 1 to 12 to represent either the twelve hours of time or the twelve months of a year. An inner portion of the watch face includes on/off lights for showing two digits which would represent the minutes in the time mode or the day of the month in the date mode. The watch display may also include an animation mode wherein the lights run through a cycle of turning on and then off, sequentially, one at a time at desired times such as when the power is turned on or just before it is turned off. The method of the present invention includes showing time by turning on the lights showing numbers from 1 through the current hour and showing the minutes by the digits in the inner portion and/or showing the date by illuminating one light at the number of the month and showing the day of the month by the digits at the inner portion. The watch display may switch back and forth between the two modes or when either mode is left unattended or a certain period of time, turn off. | 04-30-2015 |
William Tsai, New York, NY US
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20150287263 | SOLAR LIGHTING WITH PAY-AS-YOU GO TECHNOLOGY - Disclosed are systems, devices and methods for providing solar lighting and power to a customer by using pay-as-you-go (PAYG) technology. The PAYG technology allows a customer to make incremental payments for a solar energy system that includes a lighting unit. The payments can be made through a smartphone. A cable is used to connect an audio jack of the smartphone and a PV power jack of the lighting unit. Analog AC signals including data about activation, payment, usage and status are transmitted over the cable between the service provider and lighting unit, through a smartphone. The power jack of the lighting unit is also used to connect to a solar panel of a charging unit and a battery of the lighting unit. | 10-08-2015 |