Patent application number | Description | Published |
20100239482 | METHOD OF PRODUCING GAS BARRIER LAYER, GAS BARRIER FILM FOR SOLAR BATTERIES AND GAS BARRIER FILM FOR DISPLAYS - A method according to the invention comprises: starting plasma discharge for forming the gas barrier layer in a film deposition chamber; and producing the gas barrier layer by using a plasma after a first predetermined period of time has elapsed from a start of the plasma discharge. | 09-23-2010 |
20110052891 | GAS BARRIER FILM AND METHOD OF PRODUCING THE SAME - A gas barrier film comprises: a flexible film; a first organic layer formed at atmospheric pressure on a surface of the flexible film; a second organic layer formed in vacuum on a surface of the first organic layer; and an inorganic layer formed in vacuum on a surface of the second organic layer. | 03-03-2011 |
20110064932 | GAS BARRIER COATING AND GAS BARRIER FILM - Gas barrier coatings and gas barrier films are used in displays and so forth. Described gas barrier coatings are excellent not only in gas barrier properties but oxidation resistance, transparency and flexibility. A gas barrier coating is based on silicon nitride, and includes: a N/Si compositional ratio of 1 to 1.4; and a hydrogen content of 10 to 30 atomic percent. A peak of an absorption caused by Si—H stretching vibration occurs at a wavenumber ranging from 2170 to 2200 cm | 03-17-2011 |
20120003583 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION - An actinic ray-sensitive or radiation-sensitive resin composition comprising (A) a guanidine compound having a logP value of 1.2 or more, and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation. | 01-05-2012 |
20120034559 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH - Provided is an actinic-ray- or radiation-sensitive resin composition, includes a resin (P) containing a repeating unit (A) that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and a repeating unit (B) with a structure that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer, and a compound (U) structured so that when the composition is formed into a film, the compound is unevenly distributed in a surface of the film. | 02-09-2012 |
20130045445 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION - Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) comprising a repeating unit (A) containing a group that when exposed to actinic rays or radiation, is decomposed to thereby generate an acid and a repeating unit (B) containing a group that when acted on by an acid, is decomposed to thereby increase its solubility in an alkali developer, and any of compounds (Q) of general formula (1) below. | 02-21-2013 |
20140030643 | ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION - Provided is an actinic-ray- or radiation-sensitive resin composition including a resin (P) containing an acid-decomposable repeating unit (A), which resin when acted on by an acid, increases its solubility in an alkali developer, a compound (Q) that when exposed to actinic rays or radiation, generates an acid, and a compound (R) expressed by general formula ( | 01-30-2014 |
Patent application number | Description | Published |
20100101650 | COMPOUND, PHOTOELECTRIC CONVERSION DEVICE AND PHOTOELECTROCHEMICAL BATTERY - The present invention provides a complex compound (I) obtained by coordinating a ligand represented by the formula (II) below and a bidentate ligand to a metal atom, | 04-29-2010 |
20100180949 | COMPOUND, PHOTOELECTRIC CONVERTER AND PHOTOELECTROCHEMICAL CELL - The present invention provides a compound, a photoelectric converter and a photoelectrochemical cell. The complex compound (I) is obtained by coordinating a ligand represented by the formula (II) and a ligand represented by the formula (III) to a metal atom, | 07-22-2010 |
20110004028 | PROCESS FOR PRODUCTION OF DIALCOHOL, PROCESS FOR PRODUCTION OF ALLYLHALIDE COMPOUND, AND ALLYLCHLORIDE COMPOUND - Disclosed are: an advantageous production process for a carotenoid intermediate; and others. Specifically disclosed are: a process for producing a dialcohol represented by formula (1), which is characterized by reacting a Grignard reagent with an acetylene gas in an organic solvent at a temperature of 30° C. or higher to prepare an ethynyl magnesium halide and subsequently reacting the ethynyl magnesium halide with methacrolein; a process for producing an allylhalide compound represented by formula (3) [wherein X represents a halogen atom: and the wavy line means the compound is either of E/Z geometric isomers or a mixture thereof], which is characterized by reducing a dialcohol represented by formula (1) with hydrogen to produce a triene alcohol represented by formula (2) [wherein the wavy line is as defined above] and halogenating the triene alcohol; and an allylchloride compound represented by formula (4) [wherein the wavy line is as defined above]. | 01-06-2011 |
20110015442 | SULFONE COMPOUND AND METHOD FOR PRODUCING THE SAME - The present invention relates to a process for producing a sulfone compound represented by formula (1), which comprising a step of obtaining a compound represented by formula (4) by reacting a compound represented by formula (3) with a chlorate or a bromate, and then resulting reaction solution with HX or X | 01-20-2011 |
Patent application number | Description | Published |
20080241520 | HYDROPHILIC ELEMENTS - The hydrophilic element comprising a base and a hydrophilic layer formed of an inorganic oxide on a surface of the base, the hydrophilic layer having a columnar structure composed of columns that form angles of 10 to 70 degrees with respect to a line normal to the base, exhibits not only excellent hydrophilicity and water retention but also high strength and stability over time and which yet is easy to produce and best suited for use as humidity modifiers and anti-fogging elements, in particular, anti-fogging films. | 10-02-2008 |
20090087587 | METHOD OF FORMING SILICON NITRIDE FILMS - The silicon nitride film-forming method includes a step of supplying a gas material including silane gas, ammonia gas and nitrogen gas in such a manner that a flow rate of the nitrogen gas is 0.2 to 20 times a total flow rate of the silane gas and the ammonia gas, and a step of carrying out inductively coupled plasma-enhanced chemical vapor deposition to form a silicon nitride film. This method is capable of forming a silicon nitride film at a high film deposition rate. | 04-02-2009 |
20100247806 | METHOD OF PRODUCING GAS BARRIER LAYER - The producing method of a gas barrier layer uses a material having at least one Si—H bond, a material having at least one N-H bond, and at least one of nitrogen gas, hydrogen gas and a noble gas and forms the gas barrier layer by plasma-enhanced CVD using a plasma in which an emission intensity A of emission at 414 nm, an emission intensity B of emission at 336 nm, an emission intensity C of emission at 337 nm, and an emission intensity D of emission at 656 nm satisfy formulas a to c: | 09-30-2010 |
Patent application number | Description | Published |
20090087586 | METHOD OF FORMING SILICON NITRIDE FILMS - The silicon nitride film-forming method includes a step of supplying a gas material including silane gas, ammonia gas and an inert gas in such a manner that a flow rate of the inert gas is 1 to 10 times a total flow rate of the silane gas and the ammonia gas, and a step of carrying out inductively coupled plasma-enhanced chemical vapor deposition to form a silicon nitride film. The silicon nitride film which is high in density and exhibits good water vapor barrier properties is formed even at a low film deposition temperature. | 04-02-2009 |
20090197101 | GAS BARRIER LAYER DEPOSITION METHOD, GAS BARRIER FILM AND ORGANIC EL DEVICE - The method of depositing a gas barrier layer includes supplying a gas material including silane gas and ammonia gas as and a discharge gas including nitrogen gas as and depositing a silicon nitride film on a substrate using capacitively coupled chemical vapor deposition to form the gas barrier layer on the substrate. A ratio P/Q of RF power P (W) required to form the silicon nitride film to a total gas flow rate Q (sccm) of the silane gas, the ammonia gas and the nitrogen gas is in a range of from 0.4 to 40. The gas barrier film includes the gas barrier layer deposited by the gas barrier layer deposition method. The organic EL device includes the gas barrier film that serves as a sealing film. | 08-06-2009 |
20090291233 | PROCESS FOR PRODUCING GAS BARRIER FILMS - A process for producing gas barrier films comprises the steps of: applying a pressure of 50 N/m | 11-26-2009 |
20090317640 | METHOD OF FORMING A GAS BARRIER LAYER, A GAS BARRIER LAYER FORMED BY THE METHOD, AND A GAS BARRIER FILM - A method of forming a gas barrier layer comprises: forming a first layer over a substrate by plasma-enhanced CVD with a first plasma excitation power, at least a part of a surface of the substrate being made of an organic material; and forming a second layer on the first layer by plasma-enhanced CVD with a second plasma excitation power which is higher than the first plasma excitation power. | 12-24-2009 |
20100062183 | METHOD OF PRODUCING GAS BARRIER FILM - A method of producing a gas barrier film comprises the steps of: supplying a material gas including silane gas, ammonia gas and at least one of nitrogen gas and hydrogen gas to a process chamber; keeping the process chamber at an internal pressure of 20 to 200 Pa; holding a substrate in the process chamber at a substrate temperature of not more than 70° C.; forming a bias potential of −100 V or less at the substrate; and supplying power P (W) to the material gas so as to have a ratio P/Q of the power P to a silane gas flow rate Q (sccm) of 15 to 30 W/sccm to generate plasma, thereby depositing a silicon nitride layer on a surface of the substrate. | 03-11-2010 |
20100075150 | METHOD OF FORMING A GAS BARRIER LAYER, A GAS BARRIER LAYER FORMED BY THE METHOD, AND A GAS BARRIER FILM - A method of forming a gas barrier layer comprises: forming a first layer over a substrate by plasma-enhanced CVD at a first pressure, at least a part of a surface of the substrate being made of an organic material; and forming a second layer on the first layer by plasma-enhanced CVD at a second pressure which is lower than the first pressure. | 03-25-2010 |
Patent application number | Description | Published |
20100038235 | DIAMOND ELECTRODE, TREATMENT DEVICE AND METHOD FOR MANUFACTURING DIAMOND ELECTRODE - The present invention provides a diamond electrode that, in waste water treatment or production of functional water by using electrolysis, does not cause contamination of a solution or release of toxic substances, achieves enhancement of the energy efficiency, has excellent durability, and can endure prolonged use without damage. The present invention further provides a treatment device where the above electrode is used, and a method for manufacturing the above electrode. In a diamond electrode according to the present invention, the electrode includes a conductive diamond film covering one surface of a substrate. Assuming that the thickness of the substrate is T (μm) and the thickness of the conductive diamond film is t | 02-18-2010 |
20150176156 | SINGLE CRYSTAL DIAMOND AND DIAMOND TOOL - A single crystal diamond has a surface. In the single crystal diamond, a measurement region is defined in the surface, the measurement region includes a portion exhibiting a transmittance that is highest in the single crystal diamond and a portion exhibiting a transmittance that is lowest in the single crystal diamond, the measurement region has a plurality of square regions that are continuously arranged and each have a side having a length of 0.2 mm, and an average value of transmittances in each of the plurality of square regions is measured, wherein assuming that the average value of the transmittances in one square region is defined as T | 06-25-2015 |
20150191850 | SINGLE CRYSTAL DIAMOND AND DIAMOND TOOL - A single crystal diamond ( | 07-09-2015 |
Patent application number | Description | Published |
20080258892 | Display Device, Vehicle, Method for Displaying, Program for Displaying and Recording Medium of Same - A display section displays a speedometer having a substantially circular shape on an outer circumference of which a speed scale is provided. Then, that point on the outer circumference of the speedometer which indicates a speed at a moment is calculated. Further a speed that is attained at a given time period (e.g. 0.5 second) after the moment if the speed is increased at an acceleration at the moment is calculated. An arc-shaped pointer is displayed, the arc-shaped pointer passing (i) the calculated point of the speed scale, (ii) a middle point between the calculated point of the speed scale and a center of the speedometer, and (iii) the center of the speedometer. With this arrangement, a display device displaying the speedometer allows a driver to easily recognize the speed and an amount of a change therein (i.e. acceleration). | 10-23-2008 |
20080258897 | Automotive Display Device, Vehicle, and Display Method - An automotive display device, which allows the user to easily recognize the sameness of an information image even if the shape of the image is changed, is realized. An automotive display device ( | 10-23-2008 |
20090112389 | Condition Detection and Display System, Condition Detection and Display Method, Control Program for Condition Detection and Display System, and Storage Medium Storing the Control Program - In a condition detection and display system ( | 04-30-2009 |