Patent application number | Description | Published |
20090014319 | TRANSPARENT INSULATING FILM, METHOD FOR PRODUCING THE SAME, AND SPUTTERING TARGET - A method for producing a transparent insulating film includes a step of forming a transparent insulating film on a substrate by sputtering using a zinc-aluminum alloy target containing 50% to 90% by weight zinc and 10% to 50% byt weight aluminum in a mixed gas atmosphere of an inert gas and oxygen gas. | 01-15-2009 |
20090152102 | TRANSPARENT OPTICAL FILM AND METHOD OF FORMING THE SAME - A method of forming a transparent optical film includes the step of forming an optical film that is transparent on a substrate by a reactive sputtering process using a Mg—Si metal target in an atmosphere into which a gas of a fluorine-containing compound is introduced and in which the total pressure is adjusted to 8 Pa or more. | 06-18-2009 |
20090284687 | Liquid crystal display - A liquid crystal display having a wide color reproduction range is provided. A liquid crystal display includes a liquid crystal panel driven based on image signals, a light source emitting light for illuminating the liquid crystal panel, and a light selective transmission filter, which has wavelength selective transmission characteristics corresponding to spectral characteristics of the light source, selectively transmits light generated from the light source in the specific wavelength regions based on the wavelength selective transmission characteristics, and guides the transmitted light to the liquid crystal panel. | 11-19-2009 |
20100046084 | ELECTRO-WETTING DEVICE AND A METHOD OF MANUFACTURING THE SAME - An electro-wetting device is provided that can prevent deterioration of withstand voltage characteristics due to use of a high-dielectric constant film, thereby ensuring an insulating structure having high reliability. The electro-wetting device includes a conductive first liquid, an insulating second liquid, a transparent substrate and a cover body defining a liquid room for accommodating therein the first and second liquids, an electrode layer formed on a surface, on the liquid room side, of the transparent substrate, and an insulating layer formed on a surface of the electrode layer. The insulating layer has a lamination structure of a first insulating film made of an insulating inorganic crystalline material, and a second insulating film made of an insulating inorganic amorphous material, which results in that surface irregularities of the first insulating film is relaxed by the second insulating film, and thus the low voltage drive is possible. As a result, it is possible to obtain the highly reliable insulating layer which is excellent in the withstand voltage strength. | 02-25-2010 |
20100123103 | ZINC OXIDE BASED SPUTTERING TARGET, METHOD FOR MANUFACTURING ZINC OXIDE BASED SPUTTERING TARGET, ZINC OXIDE BASED TRANSPARENT ELECTRICALLY CONDUCTIVE FILM, METHOD FOR MANUFACTURING ZINC OXIDE BASED TRANSPARENT ELECTRICALLY CONDUCTIVE FILM, AND ELECTRONIC APPARATUS - A method for manufacturing a zinc oxide based sputtering target includes the step of producing a zinc oxide based sputtering target by using γ-Al | 05-20-2010 |
20100155718 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A method of manufacturing a thin film transistor capable of simplifying the steps is provided. The method of manufacturing a thin film transistor includes the steps of: forming a gate electrode and a gate insulating film sequentially on a substrate; forming an oxide semiconductor film in a shape including a planned channel formation region, a planned source electrode formation region, and a planned drain electrode formation region on the gate insulating film so that the whole oxide semiconductor film has the same carrier density as a carrier density of the planned channel formation region; forming a mask inhibiting heat transmission on the planned channel formation region; and heating the oxide semiconductor film in the air and thereby obtaining a higher carrier density of a region of the oxide semiconductor film not covered with the mask than the carrier density of the planned channel formation region. | 06-24-2010 |
20100186630 | LOW-REFRACTIVE-INDEX FILM, METHOD OF DEPOSITING THE SAME, AND ANTIREFLECTION FILM - Provided is a method of depositing a low-refractive-index film, by which a thin film having uniform composition distribution in the film and having a low refractive index can be formed, a low-refractive-index film deposited by the method of depositing a low-refractive-index film, and furthermore, an antireflection film including the low-refractive-index film. In a method of depositing a low-refractive-index film including depositing a low-refractive-index film composed of MgF | 07-29-2010 |
20110115003 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE - A solid-state imaging device includes a photoelectric conversion portion that is provided above an imaging surface of a substrate, and a plurality of readout circuit portions that are provided below the photoelectric conversion portion on the imaging surface. The photoelectric conversion portion includes a photoelectric conversion film that receives incident light and produces a signal charge, and a first electrode and a second electrode that sandwich the photoelectric conversion film, and the first electrode, the photoelectric conversion film, and the second electrode are sequentially layered upward on the imaging surface. Further, each of the readout circuit portions includes a readout circuit that is electrically connected with the first electrode and reads out the signal charge produced by the photoelectric conversion portion, and a ground electrode that is grounded, and the ground electrode is interposed between the readout circuit and the first electrode on the imaging surface. | 05-19-2011 |
20120175611 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having (a) an oxide semiconductor film including a channel region composed of an oxide semiconductor, and a source electrode region and a drain electrode region that are composed of the same oxide semiconductor as that of the channel region and have a higher carrier density than that of the channel region; (b) a gate insulating film; and (c) a gate electrode. | 07-12-2012 |