Patent application number | Description | Published |
20090269873 | LIQUID-CRYSTAL ELECTRO-OPTICAL APPARATUS AND METHOD OF MANUFACTURING THE SAME - A liquid crystal device comprising:
| 10-29-2009 |
20090284701 | LIQUID-CRYSTAL ELECTRO-OPTICAL APPARATUS AND METHOD OF MANUFACTURING THE SAME - A liquid crystal device comprising:
| 11-19-2009 |
20090289254 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film. | 11-26-2009 |
20100068860 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region. | 03-18-2010 |
20100085527 | LIQUID-CRYSTAL ELECTRO-OPTICAL APPARATUS AND METHOD OF MANUFACTURING THE SAME - A liquid crystal device comprising:
| 04-08-2010 |
20110068339 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film. | 03-24-2011 |
20120043534 | LIGHT-EMITTING ORGANIC COMPOUND AND EL DISPLAY DEVICE UTILIZING THE SAME - By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3×10 | 02-23-2012 |
20140221597 | LIGHT-EMITTING ORGANIC COMPOUND AND EL DISPLAY DEVICE UTILIZING THE SAME - By repeating a purification process of a light-emitting organic compound several times, a thin film made of the light-emitting organic compound to be used in an EL display device contains ionic impurities at the concentration of 0.1 ppm or lower and has a volume resistivity in the range of 3×10 | 08-07-2014 |
20150069371 | METHOD FOR MANUFACTURING AN ELECTRO-OPTICAL DEVICE - An object of the present invention is to provide an EL display device having high operation performance and reliability. | 03-12-2015 |
Patent application number | Description | Published |
20090155941 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING METHOD THEREOF AND THIN FILM FORMING APPARATUS - A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained. | 06-18-2009 |
20090267076 | EL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Plurality of pixels ( | 10-29-2009 |
20090291612 | ACTIVE MATRIX DISPLAY AND FORMING METHOD THEREOF - An active matrix liquid crystal display having improved reliability. Pixel regions and a peripheral driver circuit are integrally packed on the display. TFTs forming the peripheral driver circuit are located inside a sealing material layer on the side of a liquid crystal material, thus protecting the peripheral driver circuit from external moisture and contaminants. This enhances the long-term reliability of the peripheral driver circuit. Pixel TFTs are arranged in pixel regions. The leads going from the TFTs forming the peripheral driver circuit to the pixel TFTs are shortened. This results in a reduction in the resistance. As a result, the display characteristics are improved. | 11-26-2009 |
20100200871 | Self-Light-Emitting Device and Method of Manufacturing the Same - Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole | 08-12-2010 |
20100255184 | Film Deposition Apparatus and a Method of Manufacturing a Light Emitting Device Using the Apparatus - To provide a film deposition apparatus capable of forming an EL element of high reliability. An oxidization cell ( | 10-07-2010 |
20110042679 | Electro-Optical Device and Electronic Device - An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. | 02-24-2011 |
20110108863 | METHOD FOR MANUFACTURING AN ELECTRO-OPTICAL DEVICE - An object of the present invention is to provide an EL display device having high operation performance and reliability. | 05-12-2011 |
20110227088 | EL Display Device and Method for Manufacturing the Same - Plurality of pixels ( | 09-22-2011 |
20120061718 | Electronic Device - There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET ( | 03-15-2012 |
20120161160 | Self Light-Emitting Device - To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer ( | 06-28-2012 |
20120199853 | Self-Light-Emitting Device and Method of Manufacturing the Same - Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole | 08-09-2012 |
20120248453 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC DEVICE - An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. | 10-04-2012 |
20120286283 | EL Display device and Method for Manufacturing the Same - Plurality of pixels ( | 11-15-2012 |
20120299471 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC DEVICE - An object of the present invention is to provide an EL display device having a high operation performance and reliability. | 11-29-2012 |
20130005054 | Film Formation Apparatus and Film Formation Method - There is provided a film formation apparatus which is capable of forming an EL layer using an EL material with high purity. The EL material is purified by sublimation immediately before film formation in the film formation apparatus, to thereby remove oxygen, water, and another impurity, which are included in the EL material. Also, when film formation is performed using the EL material (high purity EL material) obtained by purifying with sublimation as an evaporation source, a high purity EL layer can be formed. | 01-03-2013 |
20130221362 | Electro-Optical Device and Electronic Device - An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. | 08-29-2013 |
20130313558 | EL Display Device and Method for Manufacturing the Same - A plurality of pixels are arranged on the substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter having a second color are provided. The second color is different from the first color. | 11-28-2013 |
20140014963 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC DEVICE - An object of the present invention is to provide an EL display device having a high operation performance and reliability. | 01-16-2014 |
20140203286 | Electro-Optical Device and Electronic Device - An object of the present invention is to provide an EL display device, which has a high operating performance and reliability. A third passivation film | 07-24-2014 |
20140252337 | Self-Light-Emitting Device and Method of Manufacturing the Same - Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole | 09-11-2014 |
20140252361 | EL Display Device and Method for Manufacturing the Same - A plurality of pixels are arranged on the substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter having a second color are provided. The second color is different from the first color. | 09-11-2014 |