Toshihiko Nishimori
Toshihiko Nishimori, Takasago-Shi JP
Patent application number | Description | Published |
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20090233442 | METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE - In a metal film production apparatus, a copper plate member is etched with a Cl | 09-17-2009 |
20090311866 | METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE - In a metal film production apparatus, a copper plate member is etched with a Cl | 12-17-2009 |
20100040802 | METHOD AND APPARATUS FOR PRODUCTION OF METAL FILM OR THE LIKE - In a metal film production apparatus, a copper plate member is etched with a Cl | 02-18-2010 |
20100047471 | BARRIER METAL FILM PRODUCTION APPARATUS, BARRIER METAL FILM PRODUCTION METHOD, METAL FILM PRODUCTION METHOD, AND METAL FILM PRODUCTION APPARATUS | 02-25-2010 |
20100124825 | BARRIER METAL FILM PRODUCTION APPARATUS, BARRIER METAL FILM PRODUCTION METHOD, METAL FILM PRODUCTION METHOD, AND METAL FILM PRODUCTION APPARATUS | 05-20-2010 |
20100181654 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, INSULATING FILM FOR SEMICONDUCTOR DEVICE, AND MANUFACTURING APPARATUS OF THE SAME - An object to provide an insulating film for a semiconductor device, which has characteristics of low permittivity, a low leak current, and high mechanical strength, undergoes small time-dependent change of these characteristics, and has excellent water resistance, and to provide a manufacturing apparatus of the same, and a manufacturing method of the semiconductor device using the insulating film. The production process comprises a film forming step of supplying a mixed gas containing a carrier gas and a raw material gas, which is a gasified material having borazine skeletal molecules, into a chamber, causing the mixed gas to be in a plasma state, applying a bias to the substrate placed in the chamber, and carrying out gas-phase polymerization by using the borazine skeletal molecule as a fundamental unit so as to form the insulating film on the substrate; and a reaction promoting step of, after the film forming step, bringing the bias applied to the substrate to a different magnitude from the bias in the film forming step, supplying the mixed gas while gradually reducing only the raw material gas, which is the gasified material having the borazine skeletal molecules, treating the insulating film with a plasma mainly comprising the carrier gas. | 07-22-2010 |
Toshihiko Nishimori, Hyogo JP
Patent application number | Description | Published |
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20090176380 | PLASMA TREATMENT METHOD AND PLASMA TREATMENT DEVICE - Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film. | 07-09-2009 |
20110266660 | INSULATING FILM FOR SEMICONDUCTOR DEVICE, PROCESS AND APPARATUS FOR PRODUCING INSULATING FILM FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE SEMICONDUCTOR DEVICE - An object is to provide an insulating film for a semiconductor device which has characteristics of a low permittivity, a low leakage current, and a high mechanical strength, undergoes less change in these characteristics with the elapse of time, and has an excellent water resistance, as well as to provide a process and an apparatus for producing the insulating film for a semiconductor device, a semiconductor device, and a process for producing the semiconductor device. A gas containing a raw material gas which gasified a predetermined alkylborazine compound is supplied in a chamber ( | 11-03-2011 |
Toshihiko Nishimori, Yokohama-Shi JP
Patent application number | Description | Published |
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20090095425 | APPARATUS FOR THE FORMATION OF A METAL FILM - An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel. | 04-16-2009 |
Toshihiko Nishimori, Minato-Ku JP
Patent application number | Description | Published |
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20130037850 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, PROTECTIVE FILM OF SEMICONDUCTOR LIGHT-EMITTING ELEMENT, AND METHOD FOR FABRICATING SAME - Disclosed are: a semiconductor light-emitting element that fulfills all of having high migration prevention, high transmittance, and low film-production cost; the protective film of the semiconductor light-emitting element; and a method for fabricating same. To this end, in the semiconductor light-emitting element-which has: a plurality of semiconductor layers ( | 02-14-2013 |