Patent application number | Description | Published |
20090066382 | Digital Pulse-Width-Modulator with Discretely Adjustable Delay Line - A hybrid digital pulse width modulator (DPWM) with digital delay-locked loops (DLLs) is provided. In this implementation, the digital pulse-width-modulator is synthesizable and includes a digital delay-locked loop around a delay-line to achieve constant frequency clocked operation. In this implementation, the resolution of the modulator is consistent over a wide range of process or temperature variations. The DPWM may implement trailing-edge, leading-edge, triangular, or phase-shift modulation. In an implementation suitable for DC-DC converters with synchronous rectifiers, for example, the DPWM may include two or more outputs for programmable dead-times. In another implementation, a digital pulse-width-modulator with a digital phase-locked loop is also provided. | 03-12-2009 |
20090179681 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a voltage-control-type clock generation circuit having a plurality of stages of first delay elements and whose oscillation frequency is controlled according to a control voltage applied to the first delay elements; a delay circuit having a plurality of stages of second delay elements connected serially; and a selection circuit selecting one from pulse signals output by the plurality of stages of respective second delay elements. The first delay elements and the second delay elements have a same structure formed on a same semiconductor substrate, and a delay amount of the second delay elements is adjusted according to the control voltage. | 07-16-2009 |
20110102040 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a voltage-control-type clock generation circuit having a plurality of stages of first delay elements and whose oscillation frequency is controlled according to a control voltage applied to the first delay elements; a delay circuit having a plurality of stages of second delay elements connected serially; and a selection circuit selecting one from pulse signals output by the plurality of stages of respective second delay elements. The first delay elements and the second delay elements have a same structure formed on a same semiconductor substrate, and a delay amount of the second delay elements is adjusted according to the control voltage. | 05-05-2011 |
20110221409 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a voltage-control-type clock generation circuit having a plurality of stages of first delay elements and whose oscillation frequency is controlled according to a control voltage applied to the first delay elements; a delay circuit having a plurality of stages of second delay elements connected serially; and a selection circuit selecting one from pulse signals output by the plurality of stages of respective second delay elements. The first delay elements and the second delay elements have a same structure formed on a same semiconductor substrate, and a delay amount of the second delay elements is adjusted according to the control voltage. | 09-15-2011 |
20120256607 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a voltage-control-type clock generation circuit having a plurality of stages of first delay elements and whose oscillation frequency is controlled according to a control voltage applied to the first delay elements; a delay circuit having a plurality of stages of second delay elements connected serially; and a selection circuit selecting one from pulse signals output by the plurality of stages of respective second delay elements. The first delay elements and the second delay elements have a same structure formed on a same semiconductor substrate, and a delay amount of the second delay elements is adjusted according to the control voltage. | 10-11-2012 |
20130270910 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a voltage-control-type clock generation circuit having a plurality of stages of first delay elements and whose oscillation frequency is controlled according to a control voltage applied to the first delay elements; a delay circuit having a plurality of stages of second delay elements connected serially; and a selection circuit selecting one from pulse signals output by the plurality of stages of respective second delay elements. The first delay elements and the second delay elements have a same structure formed on a same semiconductor substrate, and a delay amount of the second delay elements is adjusted according to the control voltage. | 10-17-2013 |
20140240015 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a voltage-control-type clock generation circuit having a plurality of stages of first delay elements and whose oscillation frequency is controlled according to a control voltage applied to the first delay elements; a delay circuit having a plurality of stages of second delay elements connected serially; and a selection circuit selecting one from pulse signals output by the plurality of stages of respective second delay elements. The first delay elements and the second delay elements have a same structure formed on a same semiconductor substrate, and a delay amount of the second delay elements is adjusted according to the control voltage. | 08-28-2014 |
Patent application number | Description | Published |
20100163859 | LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS - A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films. | 07-01-2010 |
20140326974 | LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS - A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic substrate. On the plastic substrate, disposed are two layers and more of barrier films comprising a layer represented by AlNxOy which is capable of blocking intrusion of moisture and oxygen in a light emitting layer and blocking intrusion of impurities such as an alkaline metal and an alkaline earth metal in an active layer of TFT, and further, a stress relaxation film containing resin is disposed between two layers of barrier films. | 11-06-2014 |
Patent application number | Description | Published |
20080198887 | Semiconductor laser device and method of fabricating the same - A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer. | 08-21-2008 |
20090017570 | SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME - In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements. | 01-15-2009 |
20090034573 | SEMICONDUCTOR LASER DEVICE AND FABRICATION METHOD FOR THE SAME - The semiconductor laser device includes a cavity structure having a first clad layer, an active layer and a second clad layer formed on a substrate. The second clad layer has a stripe portion extending between the front end face from which laser light is extracted and the rear end face opposite to the front end face. The stripe portion has a first region located closer to the front end face, a second region located closer to the rear end face and a change region whose width changes located between the first and second regions. The effective refractive index difference between the inside and outside of the stripe portion in the change region is greater than that in the first region. | 02-05-2009 |
20090074022 | DUAL-WAVELENGTH SEMICONDUCTOR LASER DEVICE AND METHOD FOR FABRICATING THE SAME - In a dual-wavelength semiconductor laser in which a first semiconductor laser element and a second semiconductor laser element are integrated onto a substrate made of a compound semiconductor, a constituent material of an etching stopper of the first semiconductor laser element is a material which allows diffusion of impurities less easily than a constituent material of an etching stopper of the second semiconductor laser element. | 03-19-2009 |
20090086780 | Semiconductor Laser Device and Method for Fabricating the Same - In a monolithic dual wavelength laser device in which an infrared laser part | 04-02-2009 |
20090201962 | SEMICONDUCTOR LASER DEVICE - A semiconductor laser device | 08-13-2009 |
20150063392 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - In a semiconductor light-emitting element, a first cladding layer in a first conductive type, a quantum well active layer, and a second cladding layer in a second conductive type are stacked on a semiconductor substrate in this order. A ridge-shaped stripe formed at the second cladding layer forms a waveguide. RfWr are satisfied, where the width of the ridge-shaped stripe at a front end face from which laser light is output is represented by Wf, the width of the ridge-shaped stripe at a rear end face is represented by Wr, the reflectance of the front end face is represented by Rf, and the reflectance of the rear end face is represented by Rr. Light in a fundamental transverse mode, a first high-order transverse mode, a second high-order transverse mode, and a third high-order transverse mode is guided in the waveguide. | 03-05-2015 |