Patent application number | Description | Published |
20080219295 | COMMUNICATION SYSTEM, COMMUNICATION APPARATUS, AND CONTROL METHOD THEREOF - Data is transmitted by using continuous frames each of which includes a variable-length part having a length that varies depending on an input period and a fixed-length part containing data of one input period. The transmitted continuous frames are received, a frame period is detected, and data is reproduced based on the detected frame period. | 09-11-2008 |
20080219367 | TRANSMITTING DEVICE AND CONTROL METHOD THEREOF - A transmitting device is provided that generates OFDM symbols by identifying a sampling frequency of input data that is input from an external device, determining a number of inverse Fourier transform sample points and a number of sampling points of a redundant data portion in accordance with the identified sampling frequency, and subjecting the input data to OFDM modulation using the determined number of sampling points. The transmitting device then transmits the generated OFDM symbols. | 09-11-2008 |
20090130419 | FOAM SHEET AND PRODUCTION PROCESS THEREOF - A foam sheet produced from a foamable composition containing an acid generator that generates acid or a base generator that generates base due to the action of an active energy beam, and containing a compound having decomposing foamable functional group that decomposes and eliminates at least one type of low boiling point volatile substance by reacting with acid or base, makes it possible to obtain a microcellular thin foam that was considered to be difficult to produce thus far, thereby greatly expanding the range of fields in which foams can be used and significantly contributing to industry. | 05-21-2009 |
20090279572 | TRANSMISSION APPARATUS AND METHOD - A burst signal generator generates a burst signal that is a variable length portion whose length changes in accordance with fluctuations in data input at a predetermined period. An OFDM modulator generates an OFDM signal (including a guard interval portion and an effective symbol portion) that is a fixed length portion containing data corresponding to n (n is a positive integer) times or 1/n of the predetermined period. A frame includes the variable length portion and the fixed length portion. This makes a transmission signal actually have a frame period almost equal to the period of a signal synchronized with the clock of a player, including the fluctuations. | 11-12-2009 |
20110090918 | COMMUNICATION METHOD AND APPARATUS - The parent station or a child station that transmits a pilot symbol is assigned to a pilot symbol transmission slot within a TDMA frame in a parent station or plurality of child stations for communicating using TDMA. The assigned parent station or child station transmits a pilot symbol using the pilot symbol transmission slot. | 04-21-2011 |
20120263190 | COMMUNICATION APPARATUS, COMMUNICATION SYSTEM, COMMUNICATION APPARATUS CONTROL METHOD AND NON-TRANSITORY COMPUTER-READABLE STORAGE MEDIUM - A communication apparatus performs communication of data using assigned time slots within a frame. In a case where data cannot be transmitted in a transmission time slot that has been assigned in order to transmit data, a time slot later than this transmission time slot is reserved as a time slot used to transmit the data, this later time slot being reserved within the frame having the transmission time slot in which the data cannot be transmitted. | 10-18-2012 |
20130090762 | COMMUNICATION SYSTEM, METHOD OF CONTROLLING THE SAME, AND STORAGE MEDIUM - A communication system including a parent station and a plurality of child stations, the parent station and the plurality of child stations being line-connected or loop-connected in a plurality of stages, and the parent station comprises a decision unit configured to decide, based on information representing states of the plurality of child stations, which one a first data relay method of transmitting data to a subsequent station in accordance with a clock reproduced from data received from a preceding station and a second data relay method of transmitting data to the subsequent station in accordance with a local clock generated in a local station should be employed by each of the plurality of child stations. | 04-11-2013 |
20130266027 | TRANSMISSION APPARATUS AND METHOD - A burst signal generator generates a burst signal that is a variable length portion whose length changes in accordance with fluctuations in data input at a predetermined period. An OFDM modulator generates an OFDM signal (including a guard interval portion and an effective symbol portion) that is a fixed length portion containing data corresponding to n (n is a positive integer) times or 1/n of the predetermined period. A frame includes the variable length portion and the fixed length portion. This makes a transmission signal actually have a frame period almost equal to the period of a signal synchronized with the clock of a player, including the fluctuations. | 10-10-2013 |
Patent application number | Description | Published |
20100308376 | SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times. | 12-09-2010 |
20110006343 | SEMICONDUCTOR WAFER, METHOD OF MANUFACTURING A SEMICONDUCTOR WAFER, AND ELECTRONIC DEVICE - The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that has an open portion reaching the silicon wafer; a Ge crystal formed in the open portion; a seed compound semiconductor crystal that is grown with the Ge crystal as a nucleus and that protrudes beyond a surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface. | 01-13-2011 |
20110006368 | SEMICONDUCTOR WAFER, METHOD OF MANUFACTURING A SEMICONDUCTOR WAFER, AND ELECTRONIC DEVICE - The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that includes an open portion reaching the silicon wafer and having an aspect ratio of √3/3 or more; a seed compound semiconductor crystal that is formed in the open portion and that protrudes beyond a surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface. | 01-13-2011 |
20110006399 | SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD - A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising a single-crystal Si wafer; an insulating layer that has an open region and that is formed on the wafer; a Ge layer that is epitaxially grown on the wafer in the open region; and a GaAs layer that is epitaxially grown on the Ge layer, wherein the Ge layer is formed by (i) placing the wafer in a CVD reaction chamber that can create an ultra-high vacuum low-pressure state, (ii) performing a first epitaxial growth at a first temperature at which raw material gas can thermally decompose, (iii) performing a second epitaxial growth at a second temperature that is higher than the first temperature, (iv) performing a first annealing, at a third temperature that is loss than a melting point of Ge, on epitaxial layers formed by the first and second epitaxial growths, and (v) performing a second annealing at a fourth temperature that is lower than the third temperature. The Ge layer may he formed by repeating the first annealing and the second annealing a plurality of times, and the insulating layer may be a silicon oxide layer. | 01-13-2011 |
20110012175 | SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; a Ge layer that is crystal-grown on the wafer and shaped as an isolated island; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be shaped as an island having a size that docs not exceed double a distance moved by crystal defects as a result of annealing the Ge layer at a certain temperature for a certain time. The Ge layer may be shaped as an island having a size for which stress due to a difference relative to a thermal expansion coefficient of Si, which is material of the wafer, does not cause crystal dejects when the Ge layer is annealed at a certain temperature. | 01-20-2011 |
20110018030 | SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A high-quality GaAs-type crystal thin film using an inexpensive Si water with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; a buffer layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects. | 01-27-2011 |
20110037099 | SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; a Ge layer that is crystal-grown on the wafer and shaped as an isolated island; a butler layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be shaped as an island having a size that does not exceed double a distance moved by crystal defects as a result of annealing the Ge layer at a certain temperature for a certain time. The Ge layer may be shaped as an island having a size for which stress due to a difference relative to a thermal expansion coefficient of Si, which is material of the wafer, does not cause crystal defects when the Ge layer is annealed at a certain temperature. | 02-17-2011 |
20110186816 | SEMICONDUCTOR DEVICE WAFER, SEMICONDUCTOR DEVICE, DESIGN SYSTEM, MANUFACTURING METHOD AND DESIGN METHOD - A device forming thin film for forming a semiconductor device; an inhibition portion that surrounds the device forming thin film and inhibits growth of a precursor of the device forming thin film into a crystal; a sacrificial growth portion that is formed by causing the precursor to sacrificially grow into a crystal, and is positioned around the device forming thin film separated by the inhibition portion; and a protection film that covers a top portion of the sacrificial growth portion and exposes a top portion of the device forming thin film are included. The protection film may be made of polyimide. | 08-04-2011 |
20110227042 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND REACTION APPARATUS - There is provided a method of producing a semiconductor wafer by thermally processing a base water having a portion to be thermally processed that is to be thermally processed. The method comprises a step of providing, on the base wafer, a portion to be heated that generates heat through absorption of an electromagnetic wave and selectively heats the portion to be thermally processed, a step of applying an electromagnetic wave to the base wafer, and a step of lowering the lattice defect density of the portion to he thermally processed, by means of the heat generated by the portion to be heated through the absorption of the electromagnetic wave. | 09-22-2011 |
20110227129 | SEMICONDUCTOR SUBSTRATE, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A semiconductor wafer including: a base wafer; a seed crystal disposed on the base wafer; a compound semiconductor disposed above the seed crystal; and a high resistance layer disposed between the seed crystal and the compound semiconductor, the high resistance layer having a larger resistivity than the seed crystal, and the seed crystal lattice matching or pseudo lattice matching the compound semiconductor is provided. | 09-22-2011 |
20110227199 | METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND REACTION APPARATUS - There is provided a method of producing a semiconductor wafer by thermally processing a base wafer having a portion to be thermally processed that has a single-crystal layer and is to be subjected to thermal processing and a portion to be protected that is to be protected from heal, to be added during the thermal processing. The method comprises a step of forming, above the portion to be protected, a protective layer for protecting the portion to be protected from an electromagnetic wave to be applied to the base wafer, and a step of annealing the portion to be thermally processed, by applying the electromagnetic wave to the entire base wafer. | 09-22-2011 |
20110316051 | SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, ELECTRONIC DEVICE, AND METHOD OF PRODUCING ELECTRONIC DEVICE - The semiconductor wafer includes: a base wafer; and an inhibition layer that is disposed on the base wafer as one piece or to be separate portions from each other, and inhibits growth of a crystal of a compound semiconductor, where the inhibition layer has a plurality of first opening regions that have a plurality of openings penetrating the inhibition layer and leading to the base wafer, each of the plurality of first opening regions includes therein a plurality of first openings disposed in the same arrangement, some of the plurality of first openings are first element forming openings each provided with a first compound semiconductor on which an electronic element is to be formed, and the other of the plurality of first openings are first dummy openings in which no electronic element is to be formed. | 12-29-2011 |
20120068207 | OPTICAL DEVICE, SEMICONDUCTOR WAFER, METHOD OF PRODUCING OPTICAL DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER - Provided is an optical device including a base wafer containing silicon, a plurality of seed crystals disposed on the base wafer, and a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals. At least one of the Group 3-5 compound semiconductors has a photoelectric semiconductor formed therein, the photoelectric semiconductor including a light emitting semiconductor that emits light in response to a driving current supplied thereto or a light receiving semiconductor that generates a photocurrent in response to light applied thereto, and at least one of the plurality of Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor having the photoelectric semiconductor has a heterojunction transistor formed therein. | 03-22-2012 |
20120267688 | SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER - To improve the flatness of the surface and improve the reliability of a semiconductor device when expitaxially growing semiconductor crystal layers of different types on a single silicon wafer, provided is a semiconductor wafer which includes: a base wafer having a silicon crystal in the surface thereof, the silicon crystal having a first dent and a second dent; a first Group IVB semiconductor crystal located in the first dent and exposed; a second Group IVB semiconductor crystal located in the second dent; and a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal in the second dent and exposed. | 10-25-2012 |
20120273839 | SEMICONDUCTOR WAFER, METHOD FOR PRODUCING SEMICONDUCTOR WAFER, AND METHOD FOR PRODUCING PHOTO-ELECTRIC CONVERSION DEVICE - A semiconductor wafer includes a base wafer, a sacrificial layer that is lattice-matched or pseudo lattice-matched to the base wafer, a first crystal layer that is formed on the sacrificial layer and made of an epitaxial crystal of Si | 11-01-2012 |
20120319170 | ELECTRONIC DEVICE AND METHOD FOR PRODUCING ELECTRONIC DEVICE - Electronic device is provided, including: a base wafer whose surface is made of silicon crystal; a Group 3-5 compound semiconductor crystal formed directly or indirectly on partial region of the silicon crystal; an electronic element including a portion of the Group 3-5 compound semiconductor crystal as active layer; an insulating film formed directly or indirectly on the base wafer and covering the electronic element; an electrode formed directly or indirectly on the insulating film; a first coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the electrode; a passive element formed directly or indirectly on the insulating film; a second coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the passive element. | 12-20-2012 |
20140054726 | METHOD OF PRODUCING SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - There is provided a fabrication technique of a MOS structure that has a small EOT without increasing the interface trap density. More specifically, provided is a method of producing a semiconductor wafer that includes a semiconductor crystal layer, an interlayer made of an oxide, nitride, or oxynitride of a semiconductor crystal constituting the semiconductor crystal layer, and a first insulating layer made of an oxide and in which the semiconductor crystal layer, the interlayer, and the first insulating layer are arranged in the stated order. The method includes (a) forming the first insulating layer on an original semiconductor crystal layer, and (b) exposing a surface of the first insulating layer with a nitrogen plasma to nitride, oxidize, or oxynitride a part of the original semiconductor crystal layer, thereby forming the interlayer, together with the semiconductor crystal layer that is the rest of the original semiconductor crystal layer. | 02-27-2014 |
20140203408 | METHOD OF PRODUCING COMPOSITE WAFER AND COMPOSITE WAFER - There is provided a method that includes forming a sacrificial layer and the semiconductor crystal layer on a semiconductor crystal layer formation wafer in the stated order, bonding together the semiconductor crystal layer formation wafer and a transfer-destination wafer such that a first surface of the semiconductor crystal layer and a second surface of the transfer-destination wafer face each other, and splitting the transfer-destination wafer from the semiconductor crystal layer formation wafer with the semiconductor crystal layer remaining on the transfer-destination wafer side, by etching away the sacrificial layer by immersing the semiconductor crystal layer formation wafer and the transfer-destination wafer wholly or partially in an etchant. Here, the transfer-destination wafer includes an inflexible wafer and an organic material layer, and a surface of the organic material layer is the second surface. | 07-24-2014 |