Patent application number | Description | Published |
20120075030 | MEMS ELEMENT, AND MANUFACTURING METHOD OF MEMS ELEMENT - In a MEMS device having a substrate | 03-29-2012 |
20120091547 | RESONATOR AND PRODUCTION METHOD THEREOF - A resonator using the MEMS technology is provided which improves the accuracy of a shape of electrodes so as avoid a short circuit that would otherwise be caused between input and output electrodes to thereby increase the reliability thereof. A resonator includes a substrate | 04-19-2012 |
20130147567 | OSCILLATOR - A MEMS oscillator having a feedback-type oscillation circuit including a MEMS resonator and an amplifier, a voltage control unit operable to control a bias voltage applied to an oscillating member of the MEMS resonator, and an auto gain control unit which receives an output from the amplifier and, based on a level of the output, to output an amplitude control signal for controlling a gain of the amplifier to the amplifier such that the level of the output from the amplifier comes to be a predetermined level, wherein the voltage control unit controls the bias voltage applied to the oscillating member based on an operating temperature of the MEMS resonator such that a peak gain of the MEMS resonator comes to have a predetermined value regardless of the operating temperature, and the voltage control unit derives the operating temperature of the MEMS resonator by monitoring the amplitude control signal. | 06-13-2013 |
20140144237 | ELASTIC WAVE SENSOR - An acoustic wave sensor includes a piezoelectric substrate, a transmitting electrode configured to excite a main acoustic wave propagating through a propagation region of an upper surface of the piezoelectric substrate, a receiving electrode configured to receive the propagated main acoustic wave, a first insulating film provided on the propagation region of the upper surface of the piezoelectric substrate, a second insulating film provided on the upper surface of the piezoelectric substrate to cover the first insulating film, and a reaction section provided on the upper surface of the second insulating film above the propagation region. The reaction section is configured to react with an object. A velocity of a transverse wave propagating through the first insulating film is higher than a velocity of a transverse wave propagating through the second insulating film. The acoustic wave sensor described above has high detection sensitivity. | 05-29-2014 |
20140167881 | ACOUSTIC WAVE DEVICE AND ANTENNA DUPLEXER USING THE SAME - An acoustic wave device includes a piezoelectric substrate, a comb-shaped electrode formed on the piezoelectric substrate and configured to excite a Rayleigh wave as a main acoustic wave, a first dielectric film formed above the piezoelectric substrate to cover the comb-shaped electrode, and a second dielectric film having a portion provided between electrode fingers of the comb-shaped electrode and a portion provided above the comb-shaped electrode. The portion provided between the electrode fingers is provided between the piezoelectric substrate and the first dielectric film. The portion provided above the comb-shaped electrode is provided between the comb-shaped electrode and the first dielectric film. A speed of a transverse wave propagating through the first dielectric film is lower than a speed of the Rayleigh wave excited by the comb-shaped electrode. A speed of a transverse wave propagating through the second dielectric film is higher than the speed of Rayleigh wave excited by the comb-shaped electrode. | 06-19-2014 |
20140232239 | ACOUSTIC WAVE DEVICE AND ELECTRONIC APPARATUS INCLUDING SAME - An acoustic wave device includes a piezoelectric substrate, an IDT electrode including plural electrode fingers disposed above an upper surface of the piezoelectric substrate, a first dielectric film made of oxide disposed above the upper surface of the substrate for covering the electrode fingers, and a second dielectric film made of non-oxide disposed on upper surfaces of the electrode fingers and between the first dielectric film and each of the electrode fingers. The first dielectric film contacts the upper surface of the piezoelectric substrate at a position between electrode fingers out of the plural electrode fingers adjacent to each other. The acoustic wave device prevents the electrode fingers of the IDT electrode from corrosion. | 08-21-2014 |
20140285287 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes a piezoelectric substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the piezoelectric substrate, a first dielectric film covering the upper surface of the piezoelectric substrate to cover the IDT electrode, and a second dielectric film covering an upper surface of the first dielectric film. The second dielectric film includes a thin portion positioned in a tip region of electrode fingers of the IDT electrode and a thick portion which is positioned in a middle region of the IDT electrode and is thicker than the thin portion. The acoustic wave device suppresses spurious emission and has superior passband characteristics. | 09-25-2014 |