Tomai
Catalin Tomai, Bellevue, WA US
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20100318545 | PERIOD TO DATE FUNCTIONS FOR TIME INTELLIGENCE FUNCTIONALITY - A system for extending a Time Intelligence language to provide support for period-to-date functions and for generating member sets in response to data queries is provided. The system may apply member aggregation functions and queries across a plurality of heterogeneous data sources. Each data source is aligned to a reference dimension and is said to organize data according to at least one level of granularity. In some embodiments, a member aggregation function specifies a period (e.g., year, quarter, month) and retrieves data from a data source starting with the current specified period and ending with the most recently completed period equal to the granularity of the data source. The system may allow a user to further customize a member aggregation function by specifying a granularity, a period offset, or a granularity end offset. Additionally, the system may generate a caption to display in association with the retrieved data. | 12-16-2010 |
20120124043 | PERIOD TO DATE FUNCTIONS FOR TIME INTELLIGENCE FUNCTIONALITY - A system for extending a Time Intelligence language to provide support for period-to-date functions and for generating member sets in response to data queries is provided. The system may apply member aggregation functions and queries across a plurality of heterogeneous data sources. Each data source is aligned to a reference dimension and is said to organize data according to at least one level of granularity. In some embodiments, a member aggregation function specifies a period (e.g., year, quarter, month) and retrieves data from a data source starting with the current specified period and ending with the most recently completed period equal to the granularity of the data source. The system may allow a user to further customize a member aggregation function by specifying a granularity, a period offset, or a granularity end offset. Additionally, the system may generate a caption to display in association with the retrieved data. | 05-17-2012 |
Catalin Tomai, Seattle, WA US
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20150019624 | TECHNIQUES TO MANAGE STATE INFORMATION FOR A WEB SERVICE - Techniques to manage state information for a web service are described. An apparatus may comprise a processor circuit, and an application program for execution by the processor circuit to provide a set of operations to modify a state of a network resource provided by a network service. The application program may comprise a state manager component arranged to record state information for the network resource provided by the network service as state changes occur to the network resource during a first communication session, and store a resource identifier and associated state information for the network resource in a state database, the state information for use in automatically reproducing a state of the network resource during a second communication session. Other embodiments are described and claimed. | 01-15-2015 |
Mark Tomai, Woodbury, MN US
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20120128715 | METHOD FOR STIMULATING THE IMMUNE RESPONSE OF NEWBORNS - The present invention is based on the surprising discovery that agonists of TLR8 are uniquely efficacious in enhancing (e.g. inducing) the immune response of newborns. Thus, agonists of TLR8 serve as both vaccine adjuvants and as adjunctive therapies for acute infection in newborns, preferably the agonist is a TLR8-selective agonist. The immune response induced, or enhanced, in the neonatal host can be, for example, a cytokine immune response and/or a humoral immune response (e.g., antigen-specific). | 05-24-2012 |
Mark A. Tomai, Woodbury, MN US
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20090246174 | TREATMENT FOR CUTANEOUS T CELL LYMPHOMA - The present invention provides method for treating a patient with cutaneous T cell lymphoma (CTCL). Generally, the methods include administering to the patient an IRM compound in an amount effective to ameliorate at least one symptom or clinical sign of CTCL. In some embodiments, the methods also include administering to the patient a priming dose of a Type I interferon. In another aspect, the invention provides methods of increasing a cell-mediated immune response of a cell population that includes cells affected by cutaneous T cell lymphoma. Generally, the methods include contacting the cell population with an IRM compound in an amount effective to increase at least one cell-mediated immune activity of the cell population. In some embodiments, the methods include contacting the cell population with a priming dose of a Type I interferon. | 10-01-2009 |
20150044279 | METHODS AND COMPOSITIONS FOR ENHANCING IMMUNE RESPONSE - Methods and compositions for enhancing the immune response to an IRM compound by depositing within a localized tissue region an IRM depot preparation that provides an extended residence time of active IRM within the localized tissue region. | 02-12-2015 |
20150110784 | THERAPEUTIC COMBINATIONS AND METHODS INCLUDING IRM COMPOUNDS - The present invention provides therapeutic combinations that include an immune response modifier (IRM) component and an anti-inflammatory component. The inventions further provide methods of treating a condition by administering to one having the condition a therapeutic combination that includes an IRM component and an anti-inflammatory component. | 04-23-2015 |
Shigekazu Tomai, Sodegaura-Shi JP
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20100065835 | THIN FILM TRANSISTOR HAVING CRYSTALLINE INDIUM OXIDE SEMICONDUCTOR FILM - To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide. | 03-18-2010 |
20110049511 | FIELD EFFECT TRANSISTOR, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A field effect transistor including a source electrode | 03-03-2011 |
20120292617 | In-Ga-O OXIDE SINTERED BODY, TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND MANUFACTURING METHODS THEREFOR - An oxide sintered body including indium oxide of which the crystal structure substantially includes a bixbyite structure, wherein gallium atoms are solid-saluted in the indium oxide, and an atomic ratio Ga/(Ga+In) is 0.10 to 0.15. | 11-22-2012 |
20130082218 | SINTERED OXIDE MATERIAL, TARGET COMPRISING SAME, AND OXIDE SEMICONDUCTOR THIN FILM - An oxide sintered body including an oxide of indium and aluminum and having an atomic ratio Al/(Al+In) of 0.01 to 0.08. | 04-04-2013 |
20130140502 | SPUTTERING TARGET - An oxide sintered body including an oxide of indium (In), gallium (Ga), and positive trivalent and/or positive tetravalent metal X, wherein the amount of the metal X relative to the total amount of In and Ga is 100 to 10000 ppm (weight). | 06-06-2013 |
20130221351 | LAMINATE STRUCTURE INCLUDING OXIDE SEMICONDUCTOR THIN FILM LAYER, AND THIN FILM TRANSISTOR - A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 10 | 08-29-2013 |
20140014500 | SINTERED MATERIAL, AND PROCESS FOR PRODUCING SAME - A sintered body which includes at least indium oxide and gallium oxide and comprises voids each having a volume of 14000 μm | 01-16-2014 |
20140197408 | THIN-FILM TRANSISTOR - A thin film transistor ( | 07-17-2014 |
20140252354 | SPUTTERING TARGET - A sputtering target including a sintered body: | 09-11-2014 |
Shigekazu Tomai, Sodeguara-Shi JP
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20130234134 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME - A thin film transistor including a gats electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film. | 09-12-2013 |
Shigekazu Tomai, Sodegaura-Shi Chiba JP
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20140145185 | SPUTTERING TARGET - A sputtering target including a sintered body including In, Ga and Mg, | 05-29-2014 |
Tomai Tomai, Sendai-Shi JP
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20160035498 | ELECTRICITY STORAGE DEVICE AND ELECTRODE MATERIAL THEREFOR - An electrode material for electricity storage devices includes: an active material including at least one of quinone having a halogen group and hydroquinone having a halogen group; and a porous body supporting the active material. | 02-04-2016 |