Patent application number | Description | Published |
20090290611 | SEMICONDUCTOR LASER AND MANUFACTURING METHOD THEREFOR - A semiconductor laser comprises: a ridge structure including a p-type cladding layer, an active layer, and an n-type cladding layer stacked on one another; and a burying layer burying sides of the ridge structure. The burying layer includes a p-type semiconductor layer and an n-type semiconductor layer that form a pn junction; and one of the p-type semiconductor layer and the n-type semiconductor layer has a carrier concentration of 5×10 | 11-26-2009 |
20110002352 | OPTICAL WAVEGUIDE INTEGRATED SEMICONDUCTOR OPTICAL DEVICE AND MANUFACTURING METHOD THEREFOR - An optical waveguide integrated semiconductor optical device includes a laser and an optical waveguide. The laser includes an active layer and a first cladding layer which are stacked on a second cladding layer. The optical waveguide includes an optical guiding layer and an undoped InP layer which are also stacked on the second cladding layer. A high resistance layer is located between the top surface of the optical guiding layer and a surface of the undoped InP layer and between a side of the first cladding layer and a side of the undoped InP layer. | 01-06-2011 |
20110317731 | SEMICONDUCTOR DEVICE - A semiconductor laser includes a P-type InP substrate and a P-type InP cladding layer, an AlGaInAs strained quantum well active layer, an N-type InP cladding layer, a P-type InP buried layer, an N-type InP buried layer, a P-type InP buried layer, an N-type InP layer, an N-type InP contact layer, an SiO | 12-29-2011 |
20130136391 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes an optical semiconductor element and an optical waveguide butt-joined to the optical semiconductor element. The optical semiconductor element has a mesa structure including an active layer and a burying layer coating side faces of the active layer. The optical waveguide has a mesa structure including an optical waveguide layer having a layer structure different from the active layer, and a burying layer coating side faces of the optical waveguide layer. Mesa width of the optical waveguide is narrower than mesa width of the optical semiconductor element. | 05-30-2013 |
20130208350 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; an optical amplifying section amplifying output light of the wave coupling section; a first optical waveguide optically connecting respective semiconductor lasers to the wave coupling section; a second optical waveguide optically connecting the wave coupling section to the optical amplifying section; a third optical waveguide optically connected to an output of the optical amplifying section; and a phase regulator located in at least one of the first, second, and third optical waveguides, and regulating phase of reflected light that is reflected at a reflecting point in the optical semiconductor device and that returns to the semiconductor lasers. The phase regulator adjusts the phase of the reflected light to decrease line width of the light output by the semiconductor lasers. | 08-15-2013 |
20140056556 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: semiconductor lasers separated into two groups; an optical coupler combining light output from the semiconductor lasers; an optical amplifier amplifying light output from the optical coupler; and waveguides respectively connecting the semiconductor lasers to the optical coupler. Each of the waveguides includes a respective bent waveguide. The bent waveguides have the same radius of curvature. | 02-27-2014 |
20140198378 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a phase regulator regulating phase of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the semiconductor lasers; a second optical waveguide optically connecting the wave coupling section to the phase regulator; an optical amplifying section amplifying output light of the phase regulator; and a third optical waveguide optically connecting an output of the phase regulator to the optical amplifying section. The phase regulator adjusts the phase of reflected light that returns to the semiconductor lasers to decrease line width of the light output by the semiconductor lasers. | 07-17-2014 |
20150229407 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; an optical amplifying section amplifying output light of the wave coupling section; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a light intensity lowering section located in each of the first optical waveguides and lower light intensity of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the respective semiconductor lasers; to decrease line width of the light output by the semiconductor lasers. | 08-13-2015 |