Patent application number | Description | Published |
20090284840 | PROCESS FOR MAKING MICROLENS ARRAYS AND MASTERFORMS - A process for making a microlens array or a microlens array masterform comprises
| 11-19-2009 |
20100025711 | OPTICAL BONDING COMPOSITION FOR LED LIGHT SOURCE - An optical bonding composition and LED light source comprising the composition are disclosed, as well as a method of making the LED light source. The LED light source may comprise: an LED die; an optical element optically coupled to the LED die; and a bonding layer comprising an amorphous organopolysiloxane network, the organopolysiloxane network comprising a silsesquioxane portion derived from (R | 02-04-2010 |
20100059776 | OPTICAL BONDING COMPOSITION FOR LED LIGHT SOURCE - Disclosed herein is an optical bonding composition that may be used in optical applications. An LED light source that utilizes the composition is also disclosed, as well as a method of making it. The LED light source may comprise: an LED die; an optical element optically coupled to the LED die; and a bonding layer comprising surface-modified metal oxide nanoparticles in an amorphous silicate network, the bonding layer bonding the LED die and the optical element together. Efficiency of the LED light source may be increased when using an optical extractor as the optical element. | 03-11-2010 |
20110140128 | MONOCHROMATIC LIGHT SOURCE WITH HIGH ASPECT RATIO - Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wave-length. A primary portion of the emitted first wavelength light exits the LED from a top surface of the LED that has a minimum lateral dimension Wmin. The remaining portion of the emitted first wavelength light exits the LED from one or more sides of the LED that has a maximum edge thickness Tmax ( | 06-16-2011 |
20110140129 | LIGHT SOURCE WITH IMPROVED MONOCHROMATICITY - Light emitting systems are disclosed. The light emitting system includes an LED that emits light at a first wavelength and includes a pattern that enhances emission of light from a top surface of the LED and suppresses emission of light from one or more sides of the LED. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the LED and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system. | 06-16-2011 |
20110156002 | LIGHT SOURCE HAVING LIGHT BLOCKING COMPONENTS - Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system. | 06-30-2011 |
20120097983 | RE-EMITTING SEMICONDUCTOR CARRIER DEVICES FOR USE WITH LEDS AND METHODS OF MANUFACTURE - Re-emitting semiconductor constructions (RSCs) for use with LEDs, and related devices, systems, and methods are disclosed. A method of fabrication includes providing a semiconductor substrate, forming on a first side of the substrate a semiconductor layer stack, attaching a carrier window to the stack, and removing the substrate after the attaching step. The stack includes an active region adapted to convert light at a first wavelength λ | 04-26-2012 |
20130109183 | Multilayer Construction | 05-02-2013 |
20140367641 | MULTILAYER CONSTRUCTION - Multilayer construction is disclosed. The multilayer construction includes a II-VI semiconductor layer and a Si | 12-18-2014 |