Patent application number | Description | Published |
20080216747 | Coating Installation And Gas Piping - A coating installation coating installation includes a process chamber and a gas line system for supplying a gas into the process chamber. The gas line system has at least one feed opening for feeding gases into the gas line system and outlet openings for letting the gas out of the gas line system. Lines are each arranged between the feed opening(s) and the outlet openings. The flow resistance of the lines between the at least one feed opening and the outlet openings is essentially equally large. The gas line system has at least one branch point at which a first line section opens into at least three second line sections connected to the first line section. The first and second line sections are arranged in different levels and branch out like a tree structure. The line sections may be milled as a recess and/or depression in plates. | 09-11-2008 |
20080296262 | Process and Device for Cleaning and Etching a Substrate Wi - A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturise ZnO layers of up to 1 m | 12-04-2008 |
20090044754 | SUCTION DEVICE FOR PLASMA COATING CHAMBER - A device is disclosed for supporting a plasma-enhanced coating process. The device is disposed in the vicinity of a plasma and/or a substrate to be coated and/or an electrode provided for plasma generation. The device at least partially surrounds or limits a side or a plane of the plasma area or a plane in which the substrate or a carrying element carrying the substrate can be arranged, or of one of the electrodes or parts. The device comprises a cavity or a suction channel with one or several suction openings through which a gaseous medium can be suctioned off. | 02-19-2009 |
20100139753 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING A SEMICONDUCTOR DEVICE - A solar cell module comprises a transparent substrate, e.g., a glass substrate. On top of the glass substrate a layer system is deposited. The layer system comprises a front electrode which may be a transparent conductive oxide (TCO) layer. Furthermore, the layer system comprises a thin film semiconductor layer deposited on the front electrode layer. A back electrode is formed on the thin film semiconductor layer which includes a very thin metal layer having a thickness d smaller than 50 nm. A Lambertian reflective layer is deposited on the thin metal layer in order to reflect light transmitted through the metal layer. | 06-10-2010 |
20100190275 | SCRIBING DEVICE AND METHOD OF PRODUCING A THIN-FILM SOLAR CELL MODULE - A laser scribing device is provided which comprises at least a laser light source. The laser light source may generate a laser beam for scribing cell lines to form a patterned solar cell module. Furthermore, the laser may emit a light beam for generating a light spot on the surface of the solar cell module. The light beam may be modulated compared with the light beam used for the scribing process. By means of the light spot a particular region of the active area of the solar cell module may be illuminated, and the voltage V | 07-29-2010 |
20100263719 | Thin-Film Solar Cell Module - The invention relates to a thin-film solar cell module ( | 10-21-2010 |
20100314705 | SEMICONDUCTOR DEVICE MODULE, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE MODULE, SEMICONDUCTOR DEVICE MODULE MANUFACTURING DEVICE - A semiconductor device module is provided, including a number of n semiconductor devices formed on a substraten being an integer≧2; each semiconductor device having a stack of a first contact layer region, a semiconductor layer region, and a second contact layer region wherein the first contact layer region of each (n−1)th semiconductor device is connected to the second contact layer region of the nth semiconductor device by an interconnection; and wherein, of the first and second contact layer regions, at least the first contact layer region of at least one of the semiconductor devices has a varying thickness, the thickness being maximum at the interconnection. | 12-16-2010 |
20120031479 | THIN FILM SOLAR FABRICATION PROCESS, DEPOSITION METHOD FOR TCO LAYER, AND SOLAR CELL PRECURSOR LAYER STACK - Methods and devices for manufacturing a TCO layer of a thin film solar cell over a transparent substrate are described. Thereby, a first ZnO-containing layer is puttered with a sputtering method selected from the group consisting of: DC-sputtering, MF-sputtering, pulsed-sputtering, and combinations thereof, over the substrate with a first set of deposition parameters, a second ZnO-containing layer is puttered with a sputtering method selected from the group consisting of: DC-sputtering, MF-sputtering, pulsed-sputtering, and combinations thereof, over the first ZnO-containing layer with a second set of deposition parameters, at least one of the deposition parameters of the second set of deposition parameters is different from the corresponding parameter of the first set of deposition parameters; and the second ZnO-containing layer is textured. | 02-09-2012 |