Patent application number | Description | Published |
20080311751 | Method for Etching a Layer on a Substrate - A method for etching a layer that is to be removed on a substrate, in which a Si | 12-18-2008 |
20090026561 | Micromechanical component and corresponding method for its manufacture - A micromechanical component having a conductive substrate, an elastically deflectable diaphragm including at least one conductive layer, which is provided over a front side of the substrate, the conductive layer being electrically insulated from the substrate, a hollow space, which is provided between the substrate and the diaphragm and is filled with a medium, and a plurality of perforation openings, which run under the diaphragm through the substrate, the perforation openings providing access to the hollow space from a back surface of the substrate, so that a volume of the medium located in the hollow space may change when the diaphragm is deflected. Also described is a corresponding manufacturing method. | 01-29-2009 |
20100003790 | METHOD FOR PRODUCING A MICROMECHANICAL COMPONENT HAVING A THIN-LAYER CAPPING - A capping technology is provided in which, despite the fact that structures which are surrounded by a silicon-germanium filling layer are exposed using ClF | 01-07-2010 |
20100086463 | METHOD FOR STRUCTURING SILICON CARBIDE WITH THE AID OF FLUORINE-CONTAINING COMPOUNDS - A method for etching silicon carbide, a mask being produced on a silicon carbide layer, the unmasked areas of the silicon carbide layer being etched using a fluorine-containing compound, which is selected from the group including interhalogen compounds of fluorine and/or xenon difluoride. The use of chlorine trifluoride, chlorine pentafluoride, and/or xenon difluoride for structuring silicon carbide layers covered with masks containing silicon dioxide and/or silicon oxide carbide; a structured silicon carbide layer obtained by the method, and a microstructured electromechanical component or a microelectronic component including a structured silicon carbide layer obtained by the method. | 04-08-2010 |
20100127339 | MICROMECHANICAL COMPONENT HAVING AN ANTI-ADHESIVE LAYER - A micromechanical component, having a substrate and a functional element, the functional element having a functional surface which has an anti-adhesion layer, that has been applied at least in regions, for reducing the surface adhesion forces, and in which the anti-adhesion layer is stable to a temperature of more than 800° C. | 05-27-2010 |
20100203739 | METHOD FOR ETCHING A LAYER ON A SILICON SEMICONDUCTOR SUBSTRATE - A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF | 08-12-2010 |
20100294710 | Method for producing a component, in particular a micromechanical and/or microfluidic and/or microelectronic component, and component - A method for producing a component, and a component, in particular a micromechanical and/or microfluidic and/or microelectronic component, is provided, the component including at least one patterned material region, and in a first step the patterned material region is produced in that microparticles of a first material are embedded in a matrix of a second material, and in a second step the patterned material region is rendered porous by etching using a dry etching method or a gas-phase etching method. | 11-25-2010 |
20110107817 | PARTICLE SENSOR - A particle sensor including a diaphragm, a diaphragm heater, and at least two measuring electrodes situated on the diaphragm, for electrical conductivity measurement, the diaphragm having a thickness of less than or equal to 50 μm, in order to allow a calorimetric particle quantity determination. | 05-12-2011 |
20120018779 | METHOD FOR PRODUCING MICROMECHANICAL PATTERNS HAVING A RELIEF-LIKE SIDEWALL OUTLINE SHAPE OR AN ADJUSTABLE ANGLE OF INCLINATION - A method for producing micromechanical patterns having a relief-like sidewall outline shape or an angle of inclination that is able to be set, the micromechanical patterns being etched out of a SiGe mixed semiconductor layer that is present on or deposited on a silicon semiconductor substrate, by dry chemical etching of the SiGe mixed semiconductor layer; the sidewall outline shape of the micromechanical pattern being developed by varying the germanium proportion in the SiGe mixed semiconductor layer that is to be etched; a greater germanium proportion being present in regions that are to be etched more strongly; the variation in the germanium proportion in the SiGe mixed semiconductor layer being set by a method selected from the group including depositing a SiGe mixed semiconductor layer having varying germanium content, introducing germanium into a silicon semiconductor layer or a SiGe mixed semiconductor layer, introducing silicon into a germanium layer or an SiGe mixed semiconductor layer and/or by thermal oxidation of a SiGe mixed semiconductor layer. | 01-26-2012 |
20120126799 | MAGNETIC FIELD SENSOR AND METHOD FOR PRODUCING A MAGNETIC FIELD SENSOR - A magnetometer is described, having a substrate and a magnetic core, the substrate having an excitation coil for generating a magnetic flux in the magnetic core; and the excitation coil having a coil cross section, which is aligned generally perpendicular to a main plane of extension of the substrate. The magnetic core is situated outside the coil cross section. | 05-24-2012 |
20130319138 | MICROELECTROMECHANICAL SENSOR FOR MEASURING A FORCE, AND CORRESPONDING METHOD - A microelectromechanical sensor is configured to measure a force, a pressure, or the like. The sensor includes a substrate and a measuring element. The measuring element includes at least two electrically conductive regions, and at least one of the electrically conductive regions is at least partly connected to the substrate. The sensor also includes at least one changing region, and the changing region lies at least partly between the electrically conductive regions. The changing region is configured in a substantially electrically insulating manner in an unloaded state and in a substantially electrically conductive manner in a loaded state. | 12-05-2013 |