Patent application number | Description | Published |
20080284868 | IMAGING ELEMENT - Imaging elements are provided. An imaging element has a wireless communication circuit adapted to detect a wireless communication signal and to generate a control signal; an illumination circuit having an illumination element, the illumination circuit being adapted so that the illumination element generates light at an intensity that is based upon the control signal and a body containing the wireless communication circuit and the light source, wherein the body occupies a space that is less than about five cubic millimeters. The imaging element can also incorporate radiation sensors and can provide wireless signals indicative of sampled radiation. | 11-20-2008 |
20090194672 | DIGITAL RADIOGRAPHIC IMAGING APPARATUS - A light sensing array has a plurality of electrically isolated photosensors, each photosensor having a first terminal and a second terminal, each of the terminals of each photosensor being isolated from the terminals of the other photosensors, wherein each photosensor responds to an incident light level by producing a charge difference between the first and second terminal. There is a differential circuit selectively coupled to the first and second terminals of one of the photosensors for producing an output signal related to the charge difference between the first and second terminals. | 08-06-2009 |
20090291269 | METHOD FOR CONDITIONING A SUBSTRATE SURFACE FOR FORMING AN ELECTRONIC DEVICE THEREON AND RESULTANT DEVICE - A method for forming an electronic device on a flexible substrate conditions a surface of the flexible substrate to increase its malleability and to provide a conditioned substrate surface. A master surface is impressed against the conditioned substrate surface. The master surface is then released from the conditioned substrate surface, thereby forming a circuit-side surface on the substrate. The electronic device is then formed on the circuit-side surface. The substrate may be supported on a carrier during the method. | 11-26-2009 |
20100071206 | Low cost die release wafer - Exemplary embodiments provide methods and systems for assembling electronic devices, such as integrated circuit (IC) chips, using a release member having a phase change material. Specifically, IC elements/components can be selectively received, stored, inspected, repaired, and/or released in a scalable manner during the assembly of IC chips by inducing phase change of the phase change material. The release member can be glass with the IC elements grown on the glass. In some embodiments, the release member can be used for a low cost placement of the IC elements in combination with an intermediate transfer layer. | 03-25-2010 |
20100071930 | SOLVENT SOFTENING TO ALLOW DIE PLACEMENT - Exemplary embodiments provide methods and systems for assembling electronic devices, such as integrated circuit (IC) chips, by selectively and seating IC elements onto/into a receiving substrate, such as a chip substrate. Specifically, the assembly of IC chips can include embedding IC elements onto the receiving substrate upon softening the receiving substrate. Such softening can be performed by using a softening agent and/or an activatable thermal barrier material. In an exemplary embodiment, pockets can be formed in the receiving substrate using the activatable thermal barrier material for the IC assembly. | 03-25-2010 |
20100072490 | LOW COST FLEXIBLE DISPLAY SHEET - Exemplary embodiments provide methods and systems for assembling electronic devices, such as integrated circuit (IC) chips, onto a subsequent flexible surface using a release member having a phase change material. Specifically, IC elements/components can be selectively received, stored, inspected, repaired, and/or released in a scalable manner during the assembly of IC chips by inducing phase change of the phase change material. The release member can be flexible or rigid. In some embodiments, the release member can be used with an intermediate transfer member. In some embodiments the IC element can be incorporated into a subsequent flexible surface including components for a TV, radiographic detector, sensor array, or any similar product having a requirement to emit, detect, or collect energy. In addition, the IC elements can be RF emitting, or visually emitting. | 03-25-2010 |
20100072594 | LOW COST DIE PLACEMENT - Exemplary embodiments provide methods and systems for assembling electronic devices, such as integrated circuit (IC) chips, using a release member having a phase change material. Specifically, IC elements/components can be selectively received, stored, inspected, repaired, and/or released in a scalable manner during the assembly of IC chips by inducing phase change of the phase change material. The release member can be flexible or rigid. In some embodiments, the release member can be used for a low cost placement of the IC elements in combination with an SOI (silicon on insulator) wafer and/or an intermediate transfer member. In other embodiments, the release member can be used for a low cost placement of the IC elements in combination with a release wafer. | 03-25-2010 |
20100073166 | LASER ABLATION TO CREATE POCKET FOR DIE PLACEMENT - Exemplary embodiments provide methods and systems for assembling electronic devices, such as integrated circuit (IC) chips, by selectively and scalably embedding or seating IC elements onto/into a receiving substrate, such as a chip substrate. Specifically, the assembly of IC chips can include forming a pocket in the receiving substrate to accommodate the IC elements therein. Such pockets can be formed in the receiving substrate using laser ablation. | 03-25-2010 |
20100075459 | THERMAL BARRIER LAYER FOR INTEGRATED CIRCUIT MANUFACTURE - Exemplary embodiments provide methods and systems for assembling electronic devices, such as integrated circuit (IC) chips, by selectively and scalably embedding or seating IC elements onto/into a receiving substrate, such as a chip substrate. Preparing of the chip substrate can be performed by depositing or patterning an activatable thermal barrier material on a surface of the substrate. The IC chips are secured on the prepared substrate by activating the thermal barrier material between the chip substrate and IC chips. Securing can include softening of the chip substrate with the activated thermal barrier material to an amount suitable for embedding the IC chips. Securing can also include adhesively bonding the IC chips to the substrate with the activated thermal barrier material in the case of a non-pliable substrate. | 03-25-2010 |
20100128450 | SOLVENT SOFTENING TO ALLOW DIE PLACEMENT - Exemplary embodiments provide methods and systems for assembling electronic devices, such as integrated circuit (IC) chips, by selectively and seating IC elements onto/into a receiving substrate, such as a chip substrate. Specifically, the assembly of IC chips can include embedding IC elements onto the receiving substrate upon softening the receiving substrate. Such softening can be performed by using a softening agent and/or an activatable thermal barrier material. In an exemplary embodiment, pockets can be formed in the receiving substrate using the activatable thermal barrier material for the IC assembly. | 05-27-2010 |
20100129945 | METAL SUBSTRATE HAVING ELECTRONIC DEVICES FORMED THEREON - A method of forming an electronic device on a metal substrate deposits a first seed layer of a first metal on at least one master surface with a roughness less than 400 nm. A supporting metal layer is bonded to the first seed layer to form the metal substrate | 05-27-2010 |
20100129965 | METAL SUBSTRATE HAVING ELECTRONIC DEVICES FORMED THEREON - A method of forming an electronic device on a metal substrate deposits a first seed layer of a first metal on at least one master surface with a roughness less than 400 nm. A supporting metal layer is bonded to the first seed layer to form the metal substrate | 05-27-2010 |
20100136777 | FLEXIBLE SUBSTRATE WITH ELECTRONIC DEVICES FORMED THEREON - A method of manufacturing an electronic device ( | 06-03-2010 |
20100301443 | IMAGING ARRAY WITH DUAL HEIGHT SEMICONDUCTOR AND METHOD OF MAKING SAME - A method of fabricating an imaging array includes providing a single crystal silicon substrate and bonding the single crystal silicon substrate to an insulating substrate. One or more portions of an exposed surface of the single-crystal silicon substrate are removed to form a pattern of first areas having a first height measured from the insulating substrate and second areas having a second height measured from the insulating substrate. Photosensitive elements are formed on the first areas and readout elements are formed on the second areas. The single-crystal silicon substrate is treated by hydrogen implantation to form an internal separation boundary and a portion of the single-crystal silicon substrate is removed at the internal separation boundary to form the exposed surface. | 12-02-2010 |
20100320514 | DIGITAL RADIOGRAPHY IMAGER WITH BURIED INTERCONNECT LAYER IN SILICON-ON-GLASS AND METHOD OF FABRICATING SAME - A method of forming an imaging array includes providing a single crystal silicon substrate having an internal separation layer, forming a patterned conductive layer proximate a first side of the single crystal silicon substrate, forming an electrically conductive layer on the first side of the single crystal silicon substrate and in communication with the patterned conductive layer, securing the single crystal silicon substrate having the patterned conductive layer and electrically conductive layer formed thereon to a glass substrate with the first side of the single crystal silicon substrate proximate the glass substrate, separating the single crystal silicon substrate at the internal separation layer to create an exposed surface opposite the first side of the single crystal silicon substrate and forming an array comprising a plurality of photosensitive elements and readout elements on the exposed surface. | 12-23-2010 |
20100320556 | CONTINUOUS LARGE AREA IMAGING AND DISPLAY ARRAYS USING READOUT ARRAYS FABRICATED IN SILICON-ON-GLASS SUBSTRATES - A vertically-integrated image sensor is proposed with the performance characteristics of single crystal silicon but with the area coverage and cost of arrays fabricated on glass. The image sensor can include a backplane array having readout elements implemented in silicon-on-glass, a frontplane array of photosensitive elements vertically integrated above the backplane, and an interconnect layer disposed between the backplane array and the image sensing array. Since large area silicon-on-glass backplanes are formed by tiling thin single-crystal silicon layers cleaved from a thick silicon wafer side-by-side on large area glass gaps between the tiled silicon backplane would normally result in gaps in the image captured by the array. Therefore, embodiments further propose that the pixel pitch in both horizontal and vertical directions of the frontplane be larger than the pixel pitch of the backplane, with the pixel pitch difference being sufficient that the frontplane bridges the gap between backplane tiles. | 12-23-2010 |
20110024642 | RADIOGRAPHIC DETECTOR FORMED ON SCINTILLATOR - A projection radiographic imaging apparatus includes a scintillator and an imaging array. The imaging array includes a plurality of pixels formed directly on a side of the scintillator. Each of the pixels includes at least one photosensor and at least one readout element. | 02-03-2011 |
20110024774 | DIGITAL RADIOGRAPHIC FLAT-PANEL IMAGING ARRAY WITH DUAL HEIGHT SEMICONDUCTOR AND METHOD OF MAKING SAME - A method of manufacturing an imaging array includes providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer is formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer. | 02-03-2011 |
20110210382 | DIGITAL RADIOGRAPHIC FLAT-PANEL IMAGING ARRAY WITH DUAL HEIGHT SEMICONDUCTOR AND METHOD OF MAKING SAME - Method of manufacturing imaging arrays can include providing a silicon tile having a first surface and a second, opposite surface. A buried dielectric layer is formed in the silicon tile between the first and second surfaces to define a bottom silicon layer between the first surface and the dielectric layer. A separation boundary is formed in the silicon tile between the second surface and the dielectric layer to define a top silicon layer between the dielectric layer and the separation boundary and a removable silicon layer between the separation boundary and the second surface. An oxide layer formed on the first surface of the silicon tile and the silicon tile is bonded to a glass substrate at the oxide layer. The silicon tile is separated at the separation boundary to remove the removable silicon layer, exposing the top silicon layer. Semiconductive elements are formed using the exposed top silicon layer. | 09-01-2011 |
20110212555 | FLEXIBLE SUBSTRATE WITH ELECTRONIC DEVICES AND TRACES - A method of manufacturing an electronic device ( | 09-01-2011 |
20110220610 | FLEXIBLE SUBSTRATE WITH ELECTRONIC DEVICES AND TRACES - A method of manufacturing an electronic device ( | 09-15-2011 |
20110303849 | DUAL SCREEN RADIOGRAPHIC DETECTOR WITH IMPROVED SPATIAL SAMPLING - Embodiments of radiographic imaging apparatus and methods for operating the same can include a first scintillator, a second scintillator, a plurality of first photosensitive elements, and a plurality of second photosensitive elements. The plurality of first photosensitive elements receives light from the first scintillator and has first photosensitive element characteristics chosen to cooperate with the first scintillator properties. The plurality of second photosensitive elements are arranged to receive light from the second scintillator and has second photosensitive element characteristics different from the first photosensitive element characteristics and chosen to cooperate with the second scintillator properties. Further, the first scintillator can have first scintillator properties and the second scintillator can have second scintillator properties different from the first scintillator properties. | 12-15-2011 |
20120018627 | DIGITAL RADIOGRAPHIC IMAGING ARRAYS WITH REDUCED NOISE - Exemplary embodiments provide a radiographic array, flat detector panel and/or X-ray imaging apparatus including the same and/or methods for using the same or calibrating the same. Exemplary embodiments can reduce or address noise occurring in the optically sensitive pixels that is temporally not related to image data detected by the optically sensitive pixels or dark reference frames detected by the optically sensitive pixels. Exemplary embodiments can include a capacitive element in a calibration pixel coupled between a row conductive line and a column conductive line in an imaging array. | 01-26-2012 |
20120122267 | CONTINUOUS LARGE AREA IMAGING AND DISPLAY ARRAYS USING READOUT ARRAYS FABRICATED IN SILICON-ON-GLASS SUBSTRATES - A vertically-integrated image sensor is proposed with the performance characteristics of single crystal silicon but with the area coverage and cost of arrays fabricated on glass. The image sensor can include a backplane array having readout elements implemented in silicon-on-glass, a frontplane array of photosensitive elements vertically integrated above the backplane, and an interconnect layer disposed between the backplane array and the image sensing array. Since large area silicon-on-glass backplanes are formed by tiling thin single-crystal silicon layers cleaved from a thick silicon wafer side-by-side on large area glass gaps between the tiled silicon backplane would normally result in gaps in the image captured by the array. Therefore, embodiments further propose that the pixel pitch in both horizontal and vertical directions of the frontplane be larger than the pixel pitch of the backplane, with the pixel pitch difference being sufficient that the frontplane bridges the gap between backplane tiles. | 05-17-2012 |
20120153173 | HIGH CHARGE CAPACITY PIXEL ARCHITECTURE, PHOTOELECTRIC CONVERSION APPARATUS, RADIATION IMAGE PICKUP SYSTEM AND METHODS FOR SAME - Embodiments of methods and apparatus are disclosed for obtaining an imaging array or a digital radiographic system including a plurality of pixels where at least one pixel can include a scan line, a bias line, a switching element including a first terminal, a second terminal, and a control electrode where the control electrode is electrically coupled to the scan line; and a photoelectric conversion element including a first terminal electrically coupled to the bias line and a second terminal electrically coupled to the first terminal of the switching element, and a signal storage element formed in the same layers as the scan line, bias line, the data line, the switching element and the photoelectric conversion element. An area of one terminal of the signal storage element can be larger than a surface area of the pixel. | 06-21-2012 |
20120153174 | DIGITAL RADIOGRAPHIC DETECTOR ARRAY INCLUDING SPACERS AND METHODS FOR SAME - Embodiments relate to detector imaging arrays with highly robust mounting of scintillators (e.g., scintillating phosphor screens) to imaging arrays. For example, the detector arrays comprise spacers to define a space between or separate the scintillator from the imaging array. Embodiments according to present teachings can provide projection radiographic imaging apparatuses, including a scintillator, an imaging array including a plurality of pixels formed over a substrate, and a plurality of spacers disposed between an active surface of the imaging array and the scintillator. The spacers can reduce or prevent contact between a surface of the scintillator and the active surface of the imaging array, strengthen or control attachment therebetween, or adjust light transmittance therebetween. | 06-21-2012 |
20120153175 | DIGITAL RADIOGRAPHIC DETECTOR ARRAY INCLUDING SPACERS AND METHODS FOR SAME - Embodiments relate to detector imaging arrays with scintillators (e.g., scintillating phosphor screens) mounted to imaging arrays. For example, the detector arrays comprise spacers to define a space between or separate the scintillator from the imaging array and a component of the imaging array is formed over the spacers. Embodiments according to present teachings can provide projection radiographic imaging apparatuses and methods including increased fill factors. Embodiments according to present teachings can provide projection radiographic imaging apparatuses, including a scintillator, an imaging array including a plurality of pixels formed over a substrate, and a plurality of spacers disposed between an active surface of the imaging array and the scintillator, where a component of the imaging array is over at least one of the spacers. The spacers can adjust light transmittance between the imaging array and the scintillator. | 06-21-2012 |
20120168633 | APPARATUS AND METHODS FOR HIGH PERFORMANCE RADIOGRAPHIC IMGAGING ARRAY INCLUDING REFELCTIVE CAPABILTIY - Embodiments of methods/apparatus according to the application can include radiographic imaging device comprising an imaging array of pixels or a plurality of photosensors including a first side to receive light from a scintillator and a second side to pass second light responsive to impingement of the scintillator light and a reflective layer configured to reflect third light responsive to impingement of the second light. Exemplary photosensors can absorb a prescribed amount of the scintillator light received through a first transparent side and the third light received through a second transparent side. Exemplary reflective arrangements can be selected based upon scintillotor emission characteristics and/or photosensor absorption characteristics. Embodiments of radiographic detector arrays and methods can reduce photosensor thickness to reduce noise, reduce image lag and/or increase charge capacity. Embodiments can maintain the quantum efficiency of a reduced thickness photosensor. | 07-05-2012 |
20130001426 | RADIOGRAPHIC DETECTOR INCLUDING TRAP OCCUPANCY CHANGE MONITOR AND FEEDBACK, IMAGING APPARATUS AND METHODS USING THE SAME - Embodiments of radiographic imaging systems; digital radiography detectors and methods for using the same can monitor and/or control trap occupancy levels in photosensors of radiographic sensors (e.g., DR FPDs). In exemplary radiographic imaging apparatus embodiments, monitoring of trap occupancy or change in trap occupancy of the photosensor can determine whether an imaging array or detector panel has reached a stable operating point. In another embodiment, trap occupancy information can be used (a) to enable a generator (e.g., x-ray source) for a radiographic exposure and/or (b) to adjust to or to maintain a change in trap occupancy level at pre-determined set-point or to adjust to or maintain a change in trap occupancy level within a prescribed range (e.g., using clock signals and bias voltages applied to the photosensor). | 01-03-2013 |
20130170616 | RADIOGRAPHIC DETECTOR INCLUDING BLOCK ADDRESS PIXEL ARCHITECTURE, IMAGING APPARATUS AND METHODS USING THE SAME - Embodiments of radiographic imaging systems; digital radiography detectors and methods for using the same can include radiographic imaging pixel unit cells that can include a plurality of N pixel elements that each include a photoelectric thin-film conversion element connected in-series to a conversion thin-film switching element, a conductor connected to the plurality of N pixel elements and an output switching element connected between the conductor and an imaging array output. Scan lines or row lines can extend in a first direction coupled to more than one pixel unit cell and data lines or column lines can extend in a second direction coupled to more than one pixel unit cell. | 07-04-2013 |
20130170620 | RADIOGRAPHIC DETECTOR WITH RAPID POWER-UP, IMAGING APPARATUS AND METHODS USING THE SAME - Embodiments of methods/apparatus can transition a DR detector imaging array to low power photosensor mode where a first voltage is applied across the photosensors. Embodiments of methods/apparatus can provide an area radiographic imaging array including a plurality of pixels arranged in a matrix at the imaging array where each pixel can include at least one electrically chargeable photosensor and at least one transistor, row address circuits, signal sensing circuits, and photosensor power control circuitry to maintain a first voltage across photosensors of the portion of the imaging array when the detector is between imaging operations. In one embodiment, photosensor power control circuitry can maintain the first voltage across the photosensors when a power consumption of the signal sensing circuits is less than 1% of the power consumption of the signal sensing circuits during readout of a signal from the portion of the imaging array. | 07-04-2013 |
20130220514 | METHOD OF MANUFACTURING DIGITAL DETECTORS - There is described a method of manufacturing a digital radiography panel. The method includes providing a scintillator screen and spray coating an acrylic adhesive composition on the scintillator screen. A flat panel detector and the scintillator screen with acrylic adhesive composition are compressed together at a force of about 5 psi to about 15 psi, at an atmospheric pressure of about 0.3 Torr to about 100.0 Torr for a time sufficient to affix the flat panel detector to the scintillator screen to form the digital radiography panel. | 08-29-2013 |
20130221225 | COATINGS FOR DIGITAL DETECTORS - Described is a scintillator screen that includes a supporting layer having a phosphor dispersed in a polymeric binder disposed on the supporting layer and a barrier layer disposed on the polymeric binder. The barrier layer includes a non-moisture absorbing polymer selected from the group consisting of polyethylene terephthalate, cellulose diacetate, ethylene vinyl acetate and polyvinyl butyraldehyde. The barrier layer has a thickness of less than 1 micron. An antistatic layer is disposed on the barrier layer. The antistatic layer includes poly(3,4-ethylenedixythiophene)-poly(styrene sulfonate) (PEDOT/PSS) dispersed in a polymer selected from the group consisting of a polyester and a polyurethane. The antistatic layer has a transparency of greater than 95 percent at a wavelength of from about 400 nm to 600 nm. | 08-29-2013 |
20130221230 | RADIOGRAPHIC DETECTOR ARRAYS INCLUDING SCINTILLATORS AND METHODS FOR SAME - Embodiments relate to detector imaging arrays with scintillators (e.g., scintillating phosphor screens) mounted to imaging arrays or radiographic detectors using the same. For example, the detector imaging arrays can include a scintillator, an imaging array comprising imaging pixels, where each imaging pixel comprises at least one readout element and one photosensor; and a first dielectric layer formed between the scintillator and the imaging layer, wherein the dielectric constant of the insulating layer is very low. Embodiments according to the application can include a second dielectric layer formed over at least a portion of the non-photosensitive regions of the array and/or a first dielectric layer, each with a dielectric constant. | 08-29-2013 |
20140014847 | RADIOGRAPHIC IMAGING ARRAY FABRICATION PROCESS FOR METAL OXIDE THIN-FILM TRANSISTORS WITH REDUCED MASK COUNT - Embodiments of radiographic imaging systems; radiography detectors and methods for using the same; and/or fabrication methods therefore can include radiographic imaging array that can include a plurality of pixels that each include a photoelectric conversion element coupled to a thin-film switching element. In certain exemplary embodiments, thin-film switching element is a metal oxide (e.g., a-IGZO) TFT manufactured using a reduce photolithography mask counts. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT that includes reduced lower alignment tolerances between TFT electrodes. In certain exemplary embodiments, the thin-film switching element is a metal oxide (e.g., a-IGZO) TFT including a reduced thickness active layer. | 01-16-2014 |
20150055761 | TEMPERATURE COMPENSATION FOR THIN FILM TRANSISTORS IN DIGITAL X-RAY DETECTORS - A digital radiographic detector uses predetermined calibration information corresponding to a first operating temperature of the detector. The calibration data is accessible by the detector to compensate a radiographic image captured by the detector at a second operating temperature different than the first operating temperature. The operating temperature of the detector is monitored at approximately the time at which the radiographic image is captured at the second temperature. | 02-26-2015 |