| Patent application number | Description | Published |
|---|
| 20120000528 | METHOD OF FABRICATING A SOLAR CELL WITH A TUNNEL DIELECTRIC LAYER - Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described. | 01-05-2012 |
| 20120073650 | METHOD OF FABRICATING AN EMITTER REGION OF A SOLAR CELL - Methods of fabricating emitter regions of solar cells are described. Methods of forming layers on substrates of solar cells, and the resulting solar cells, are also described. | 03-29-2012 |
| 20120204926 | PROCESS AND STRUCTURES FOR FABRICATION OF SOLAR CELLS - Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses. | 08-16-2012 |
| 20130078758 | METHOD OF FABRICATING A SOLAR CELL WITH A TUNNEL DIELECTRIC LAYER - Methods of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described. | 03-28-2013 |
| 20130247965 | SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL - Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate. | 09-26-2013 |
| 20140096824 | PROCESS AND STRUCTURES FOR FABRICATION OF SOLAR CELLS - Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses. | 04-10-2014 |
| 20140134788 | METHOD OF FABRICATING A SOLAR CELL WITH A TUNNEL DIELECTRIC LAYER - Method of fabricating solar cells with tunnel dielectric layers are described. Solar cells with tunnel dielectric layers are also described. | 05-15-2014 |
| 20150243803 | SOLAR CELL HAVING AN EMITTER REGION WITH WIDE BANDGAP SEMICONDUCTOR MATERIAL - Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate. | 08-27-2015 |
