Tien-Yen
Tien-Yen Ma, New Taipei City TW
Patent application number | Description | Published |
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20130202108 | METHOD AND DEVICE FOR GENERATION OF SECRET KEY - A method and a device for generation of a secret key are provided. In one exemplary embodiment, the disclosure is directed to a device for generation of a secret key. The device for generation of a secret key includes a motion sensor, a storage unit and a control unit. The motion sensor is configured to sense a motion of the device in a three-dimensional space and generate a motion sensing signal. The storage unit is configured to store the motion sensing signal. The control unit is electrically coupled to the motion sensor and the storage unit, and configured to generate a secret key by the motion sensing signal. | 08-08-2013 |
Tien-Yen Wang, Hsinchu TW
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20100039304 | DIGITAL TO ANALOG CONVERTER AND METHOD THEREOF - A digital to analog converter (DAC) has a plurality of transistor-resistor units connected in a string. Each of the transistor-resistor units of the DAC has a pair of transistors that are turned on/off by a pair of complementary control signals. Since the two transistors of each transistor-resistor unit are positioned symmetrically, an equivalent resistance would be determined precisely according to received digital codes, such that an output voltage of the DAC could be adjusted precisely based on the equivalent resistance. | 02-18-2010 |
Tien-Yen Wang, Taipei City TW
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20110273237 | Oscillator With Frequency Determined By Relative Magnitudes of Current Sources - An oscillator circuit includes a circuit loop and multiple current sources. The circuit loop includes an output having the oscillating signal. The multiple current sources are turned on independently of a phase of the oscillating signal. The current sources control magnitudes of both charging current and discharging current at nodes of the circuit loop, including the output. Relative magnitudes of different current sources determine a frequency of the oscillating signal. | 11-10-2011 |
20130147564 | OSCILLATOR WITH FREQUENCY DETERMINED BY RELATIVE MAGNITUDES OF CURRENT SOURCES - An oscillator circuit includes a circuit loop and multiple current sources. The circuit loop includes an output having the oscillating signal. The multiple current sources are turned on independently of a phase of the oscillating signal. The current sources control magnitudes of both charging current and discharging current at nodes of the circuit loop, including the output. Relative magnitudes of different current sources determine a frequency of the oscillating signal. | 06-13-2013 |
Tien-Yen Wang, Taipei TW
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20110286283 | 3D TWO-BIT-PER-CELL NAND FLASH MEMORY - A 3D memory device is described which includes bottom and top memory cubes having respective arrays of vertical NAND string structures. A common source plane comprising a layer of conductive material is between the top and bottom memory cubes. The source plane is supplied a bias voltage such as ground, and is selectively coupled to an end of the vertical NAND string structures of the bottom and top memory cubes. Memory cells in a particular memory cube are read using current through the particular vertical NAND string between the source plane and a corresponding bit line coupled to another end of the particular vertical NAND string. | 11-24-2011 |
20110317480 | PHASE CHANGE MEMORY CODING - An integrated circuit phase change memory can be pre-coded by inducing a first resistance state in some cells and the memory, and a second resistance state and some other cells in the memory to represent a data set. The integrated circuit phase change memory is mounted on a substrate after coding the data set. After mounting the integrated circuit phase change memory, the data set is read by sensing the first and second resistance states, and changing cells in the first resistance state to a third resistance state and changing cells in the second resistance state to a fourth resistance state. The first and second resistance states maintain a sensing margin after solder bonding or other thermal cycling process. The third and fourth resistance states are characterized by the ability to cause a transition using higher speed and lower power, suitable for a mission function of a circuit. | 12-29-2011 |
20140119110 | PHASE CHANGE MEMORY CODING - An integrated circuit phase change memory can be pre-coded by inducing a first resistance state in some cells and the memory, and a second resistance state and some other cells in the memory to represent a data set. The integrated circuit phase change memory is mounted on a substrate after coding the data set. After mounting the integrated circuit phase change memory, the data set is read by sensing the first and second resistance states, and changing cells in the first resistance state to a third resistance state and changing cells in the second resistance state to a fourth resistance state. The first and second resistance states maintain a sensing margin after solder bonding or other thermal cycling process. The third and fourth resistance states are characterized by the ability to cause a transition using higher speed and lower power, suitable for a mission function of a circuit. | 05-01-2014 |
Tien-Yen Wang, Hsin-Chu TW
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20140153326 | CELL SENSING CIRCUIT FOR PHASE CHANGE MEMORY AND METHODS THEREOF - A cell sensing circuit for a phase changing memory and methods thereof are provided. A specific one of the proposed methods includes: providing a sensing circuit having a sense amplifier, and two identical stable currents respectively received by a reference cell and a target cell; establishing a cell voltage on a cell side and a reference voltage on a reference side respectively via the two identical stable currents; and using the sense amplifier to determine a logic state of the target cell based on a voltage difference between the reference voltage and the cell voltage. | 06-05-2014 |
Tien-Yen Wang, Hsinchu County TW
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20140241070 | REFERENCE AND SENSING WITH BIT LINE STEPPING METHOD OF MEMORY - A sensing method for a memory is provided. The memory includes: a memory cell; a reference circuit generating a reference voltage and a clamp voltage; and a current supplying circuit receiving the clamp voltage to develop a cell current passing through the memory cell to form a cell voltage, wherein the cell voltage is used for incorporating with the reference voltage to determine the information stored in the memory. | 08-28-2014 |