| Patent application number | Description | Published |
|---|
| 20140191019 | APPARATUS AND METHOD FOR STRIPPING SOLDER METALS DURING THE RECYCLING OF WASTE ELECTRICAL AND ELECTRONIC EQUIPMENT - Apparatuses and processes for recycling printed wire boards, wherein electronic components, precious metals and base metals may be collected for reuse and recycling. The apparatuses generally include a mechanical solder removal module and/or a thermal module, a chemical solder removal module, and a precious metal leaching module, wherein the modules are attached for continuous passage of the e-waste from module to module. | 07-10-2014 |
| 20140295071 | PRECURSOR COMPOSITIONS FOR ATOMIC LAYER DEPOSITION AND CHEMICAL VAPOR DEPOSITION OF TITANATE, LANTHANATE, AND TANTALATE DIELECTRIC FILMS - Barium, strontium, tantalum and lanthanum precursor compositions useful for atomic layer deposition (ALD) and chemical vapor deposition (CVD) of titanate thin films. The precursors have the formula M(Cp) | 10-02-2014 |
| 20140329011 | COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si | 11-06-2014 |
| 20140329357 | TELLURIUM COMPOUNDS USEFUL FOR DEPOSITION OF TELLURIUM CONTAINING MATERIALS - Precursors for use in depositing tellurium-containing films on substrates such as wafers or other microelectronic device substrates, as well as associated processes of making and using such precursors, and source packages of such precursors. The precursors are useful for deposition of Ge | 11-06-2014 |
| 20150050199 | REMOVAL OF LEAD FROM SOLID MATERIALS - A leaching composition that substantially removes lead from solid materials and a method of using said composition. Preferably, the concentration of lead in the solid materials following processing is low enough that the solid materials can be reused and/or disposed of at minimal cost to the processor. Preferably, the solid materials comprise glass, such as cathode ray tube glass. | 02-19-2015 |
| 20150162213 | FORMULATIONS FOR WET ETCHING NIPT DURING SILICIDE FABRICATION - Compositions and methods for substantially and efficiently removing NiPt (1-25%) material from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as gate metal materials. | 06-11-2015 |
| 20150175943 | Composition for Titanium Nitride Hard Mask and Etch Residue Removal - Aqueous compositions for stripping titanium nitride(TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a weakly coordinating anion, amine, and at least two non-oxidizing trace metal ions. The aqueous compositions contain no non-ambient oxidizer, and are exposed to air. Bifluoride, or metal corrosion inhibitor may be added to the aqueous composition. Systems and processes use the aqueous compositions for stripping titanium nitride(TiN or TiNxOy) hard mask and removing titanium nitride(TiN or TiNxOy) etch residue. | 06-25-2015 |
| 20150315215 | COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si | 11-05-2015 |
