Thomas Goebel
Thomas Goebel, Lorrach DE
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20090176868 | Amidoacetonitrile Derivatives - The invention relates to compounds of the general formula (I) wherein X, Y and W have the significances given in claim | 07-09-2009 |
20110021543 | HETEROCYCLIC COMPOUNDS AND THEIR USE AS PESTICIDES - Novel N-aryl substituted heteroindole compounds, processes for their manufacture, veterinary compositions containing such compounds, and methods of controlling ectoparasites are provided. The compounds are believed effective in the control of ectoparasites on warm-blooded productive livestock and domestic animals. | 01-27-2011 |
20110230563 | AMIDOACETONITRILE COMPOUNDS AND PESTICIDAL COMPOSITION THEREOF - Novel amidoacetonitrile compounds are disclosed. The compounds have pesticidal properties and are suitable for controlling endoparasites on warm-blooded animals. | 09-22-2011 |
20110245239 | ORGANIC COMPOUNDS - Novel isoxazoline compounds and compositions containing the compounds are disclosed. The compounds have pesticidal properties and are suitable for use on non-human animals. | 10-06-2011 |
20120232138 | AMIDOACETONITRILE COMPOUNDS HAVING PESTICIDAL ACTIVITY - Novel amidoacetonitrile compounds and compositions containing the compounds are disclosed. The compounds have pesticidal properties and are suitable for controlling endoparasites on warm-blooded animals. | 09-13-2012 |
20130131053 | ISOXAZOLINE DERIVATIVES AS PESTICIDES - The invention relates to new isoxazoline compounds of formula | 05-23-2013 |
20140120147 | ISOXAZOLINE DERIVATIVES AS PESTICIDES - The invention relates to new isoxazoline compounds of formula | 05-01-2014 |
Thomas Goebel, München DE
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20100007027 | INTEGRATED CONNECTION ARRANGEMENTS - A connection arrangement having an outer conductive structure arranged at least partly or completely in a cutout of an electrical insulation layer is provided. An inner conductive structure is arranged at the bottom of the cutout on one side of the insulation layer. The inner conductive structure adjoins the outer conductive structure in a contact zone. A contact area is arranged at the outer conductive structure on the other side of the cutout. The contact zone and the contact area do not overlap. The bottom of the cutout is arranged to overlaps at least half of the contact area, to provide a step in the insulation layer at the edge of the cutout outside a main current path between the contact area and the inner conductive structure. | 01-14-2010 |
20100129977 | INTEGRATED CIRCUIT WITH CAPACITOR AND METHOD FOR THE PRODUCTION THEREOF - An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor. | 05-27-2010 |
Thomas Goebel, Fishkill, NY US
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20100022085 | Method of Forming Support Structures for Semiconductor Devices - Support structures for semiconductor devices and methods of manufacturing thereof are disclosed. In some embodiments, the support structures include a plurality of support members that is formed in a substantially annular shape beneath a wire bond region. The central region inside the substantially annular shape of the plurality of support members may be used to route functional conductive lines for making electrical contact to active areas of the semiconductor device. Dummy support structures may optionally be formed between the functional conductive lines. The support structures may be formed in one or more conductive line layers and semiconductive material layers of a semiconductor device. In other embodiments, support members are not formed in an annular shape, and are formed in insulating layers that do not comprise low dielectric constant (k) materials. | 01-28-2010 |
Thomas Goebel, Berlin DE
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20090177082 | System Comprising a Gamma Probe and a Control Device - The invention relates to a system comprising a medical gamma probe and a control device, which is configured for acquisition of user input for gamma probe operation, and for signal evaluation, including optional signal output in conjunction with measured signals detected by the gamma probe, wherein the medical gamma probe has a probe-side transceiver apparatus and the control device has a control device-side transceiver apparatus, between which transceiver apparatuses a wireless signal transmission connection in the form of a bidirectional radio link is formed. | 07-09-2009 |
20090266993 | Arrangement with a Medical Gamma Detector, Optical Module and Kit - The invention relates to an arrangement with a medical gamma probe and an optical module arranged on the medical gamma probe, said optical module having a light source which emits light rays during operation and is configured to generate an optical pointer in a detection region of the medial gamma probe using the light rays from the light source. | 10-29-2009 |
Thomas Goebel, Munich DE
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20090200675 | Passivated Copper Chip Pads - A structure and method of forming passivated copper chip pads is described. In various embodiments, the invention describes a substrate that includes active circuitry and metal levels disposed above the substrate. A passivation layer is disposed above a last level of the metal levels. A conductive liner is disposed in the sidewalls of an opening disposed in the passivation layer, wherein the conductive liner is also disposed over an exposed surface of the last level of the metal levels. | 08-13-2009 |
Thomas Goebel, München DE
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20100129977 | INTEGRATED CIRCUIT WITH CAPACITOR AND METHOD FOR THE PRODUCTION THEREOF - An integrated circuit and fabrication method are presented. The integrated circuit includes a capacitor containing a base electrode, a covering electrode, and a dielectric between the base and covering electrodes. The dielectric contains an oxide of a material contained in the base electrode, which may be produced by anodic oxidation. A peripheral edge of the dielectric is uncovered by the covering electrode. A base layer on the capacitor includes a cutout adjacent to the dielectric. During fabrication, the base layer protects the material of the base electrode that is to be anodically oxidized from chemicals, and also protects the surrounding regions from anodic oxidation. A precision resistor may be fabricated simultaneously with the capacitor. | 05-27-2010 |
Thomas Goebel, Deutschlandsberg AT
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20110187239 | Piezoelectric Component and Method for Producing an Electrical Contact - A piezoelectric component includes an electromechanical transducer with two first electrodes and a second electrode. The second electrode is arranged between the two first electrodes. The transducer also includes a first main side, a second main side, opposite from the first main side, and a first longitudinal side. A first contiguous metallization layer is arranged on a first partial region of the first main side and on a partial region of the first longitudinal side adjacent to the first partial region of the first main side. Here, the partial region of the first longitudinal side is kept at a sufficient distance from a side edge facing the second main side and the partial region electrically contacts the at least two first electrodes. | 08-04-2011 |
20130255049 | Piezoelectric Component and Method for Producing an Electrical Contact - A piezoelectric component includes an electromechanical transducer with two first electrodes and a second electrode. The second electrode is arranged between the two first electrodes. The transducer also includes a first main side, a second main side, opposite from the first main side, and a first longitudinal side. A first contiguous metallization layer is arranged on a first partial region of the first main side and on a partial region of the first longitudinal side adjacent to the first partial region of the first main side. Here, the partial region of the first longitudinal side is kept at a sufficient distance from a side edge facing the second main side and the partial region electrically contacts the at least two first electrodes. | 10-03-2013 |
Thomas Goebel, Bejing CN
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20120149168 | Process for Producing a Multifunctional Dielectric Layer on a Substrate - A multifunctional dielectric layer can be formed on a substrate, especially on an exposed metallic strip conductor system on a substrate. An additional metal layer is formed across the surface of the exposed metal strip conductors. The metal layer is then at least partially converted to a nonconducting metal oxide, the dielectric layer. | 06-14-2012 |
Thomas Goebel, Basel CH
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20130096124 | 5-ARYL ISOXAZOLINES FOR CONTROLLING PESTS - The present invention relates to new isoxazoline compounds of formula | 04-18-2013 |
Thomas Goebel, Magnolia, TX US
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20140110167 | METHOD AND SYSTEM FOR PREDICTING A DRILL STRING STUCK PIPE EVENT - Predicting a drill string stuck pipe event. At least some of the illustrative embodiments are methods including: receiving a plurality of drilling parameters from a drilling operation; applying the plurality of drilling parameters to an ensemble prediction model comprising at least three machine-learning algorithms operated in parallel, each machine-learning algorithm predicting a probability of occurrence of a future stuck pipe event based on at least one of the plurality of drilling parameters, the ensemble prediction model creates a combined probability based on the probability of occurrence of the future stuck pipe event of each machine-learning algorithm; and providing an indication of a likelihood of a future stuck pipe event to a drilling operator, the indication based on the combined probability. | 04-24-2014 |
Thomas Goebel, Muenchen DE
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20130224946 | Passivated Copper Chip Pads - A structure and method of forming passivated copper chip pads is described. In various embodiments, the invention describes a substrate that includes active circuitry and metal levels disposed above the substrate. A passivation layer is disposed above a last level of the metal levels. A conductive liner is disposed in the sidewalls of an opening disposed in the passivation layer, wherein the conductive liner is also disposed over an exposed surface of the last level of the metal levels. | 08-29-2013 |
20140295661 | Passivated Copper Chip Pads - A structure and method of forming passivated copper chip pads is described. In various embodiments, the invention describes a substrate that includes active circuitry and metal levels disposed above the substrate. A passivation layer is disposed above a last level of the metal levels. A conductive liner is disposed in the sidewalls of an opening disposed in the passivation layer, wherein the conductive liner is also disposed over an exposed surface of the last level of the metal levels. | 10-02-2014 |