Patent application number | Description | Published |
20120056283 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed a memory element including a memory layer that has a magnetization perpendicular to a film face and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization that is perpendicular to the film face and becomes a reference for the information stored in the memory layer; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer and is formed of a non-magnetic layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure having the memory layer, the insulating layer, and the magnetization-fixed layer, and thereby the magnetization direction varies and a recording of information is performed with respect to the memory layer, and a magnitude of an effective diamagnetic field which the memory layer receives is smaller than a saturated magnetization amount of the memory layer. | 03-08-2012 |
20120148874 | STORAGE ELEMENT AND MEMORY DEVICE - A storage element including: a storage layer; a magnetization fixed layer; and an insulating layer, wherein by injecting spin-polarized electrons in a laminating direction of a layered structure that includes the storage layer, the insulating layer, and the magnetization fixed layer, the orientation of magnetization of the storage layer changes and recording of information is performed on the storage layer, and an Fe film and a film that includes Ni are formed in order from an interface side that is in contact with the insulating layer, and a graded composition distribution of Ni and Fe is formed after heating on at least one of the storage layer and the magnetization fixed layer. | 06-14-2012 |
20120155158 | STORAGE DEVICE AND WRITING CONTROL METHOD - A storage device is provided with a plurality of pairs of memory blocks, which have a storage layer which stores information and is configured to have a plurality of storage elements which store the information in the storage layer by the orientation of the magnetization of the storage layer being changed in accordance with the application of a writing voltage and so that selective application of the writing voltage is possible in accordance with input information to one storage element, and writing control sections, which store information which is to be written into each of the storage elements in a shift register, output one piece of information from the shift register, determine whether or not writing of the output information succeeds, and when writing has failed, the same information is output again, and when writing is successful, the next piece of information is output from the shift register. | 06-21-2012 |
20120175716 | STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, the storage layer is directly provided with a layer at a side opposite to the insulating layer, and this layer includes a conductive oxide. | 07-12-2012 |
20120175717 | STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes: a storage layer which has magnetization perpendicular to a film surface, the direction of the magnetization being changed in accordance with information; a magnetization fixed layer which has magnetization perpendicular to a film surface used as a base of information stored in the storage layer; and an insulating layer of a nonmagnetic substance provided between the storage layer and the magnetization fixed layer. In the storage element described above, the magnetization of the storage layer is reversed using a spin torque magnetization reversal generated by a current flowing in a lamination direction of a layer structure including the storage layer, the insulating layer, and the magnetization fixed layer to store information, and the storage layer has a laminate structure including a magnetic layer and a conductive oxide. | 07-12-2012 |
20120182796 | STORAGE ELEMENT AND MEMORY DEVICE - A storage element includes a storage layer which has magnetization vertical to the film surface and of which the direction of magnetization changes, a magnetization fixed layer which has magnetization vertical to the film surface serving as a reference of information, and an insulating layer, and the direction of magnetization of the storage layer changes by injecting spin-polarized electrons in the laminated direction of the layer structure so as to perform information recording, the size of an effective demagnetizing field that the storage layer receives is configured to be smaller than a saturated magnetization amount of the storage layer, and a ferromagnetic layer material constituting the storage layer has CoFeB as the base material and an anti-corrosive element is added to the base material. | 07-19-2012 |
20120199922 | STORAGE ELEMENT AND MEMORY DEVICE - A storage element includes: a storage layer that has magnetization perpendicular to a film face, the direction of the magnetization being changed corresponding to information; a magnetization fixed layer that has magnetization perpendicular to a film face that is a reference of the information stored in the storage layer; and an insulating layer that is formed of a nonmagnetic body provided between the storage layer and the magnetization fixed layer. The magnetization fixed layer has a structure in which the nonmagnetic layer is interposed between upper and lower ferromagnetic layers which have a laminated ferri-pinned structure of magnetically anti-parallel coupling. The direction of the magnetization of the storage layer is changed by injecting spin-polarized electrons in a lamination direction of a layer structure having the storage layer, the insulating layer, and the magnetization fixed layer, and recording of the information is performed on the storage layer. | 08-09-2012 |
20120281462 | STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes a storage layer that stores information on the basis of a magnetization state of a magnetic material; a fixed magnetization layer that has a magnetization serving as a reference of the information stored in the storage layer; an interlayer that is formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a cap layer that is provided to be adjacent to the storage layer and opposite to the interlayer; and a metal cap layer that is provided to be adjacent to the cap layer and opposite to the storage layer. | 11-08-2012 |
20120287696 | STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information | 11-15-2012 |
20120294079 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element including a memory layer to hold the information by the magnetization state of a magnetic substance, a magnetization pinned layer having magnetization serving as a reference of the information stored in the memory layer, an intermediate layer formed from a nonmagnetic substance disposed between the memory layer and the magnetization pinned layer, a magnetic coupling layer disposed adjoining the magnetization pinned layer and opposing to the intermediate layer, and a high coercive force layer disposed adjoining the magnetic coupling layer, wherein the information is stored by reversing magnetization of the memory layer, making use of spin torque magnetization reversal generated along with a current passing in the lamination direction of the layered structure including the memory layer, the intermediate layer, and the magnetization pinned layer, and the magnetic coupling layer has a two-layer laminate structure. | 11-22-2012 |
20120300541 | STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes: a storage layer which retains information by a magnetization state of a magnetic substance; a magnetization pinned layer having magnetization which is used as the basis of the information stored in the storage layer; and an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer. The storage element is configured to store information by reversing magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer, and when the saturation magnetization of the storage layer and the thickness thereof are represented by Ms (emu/cc) and t (nm), respectively, (1489/Ms)−0.59311-29-2012 | |
20120300542 | STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer. | 11-29-2012 |
20130033931 | STORAGE ELEMENT AND STORAGE DEVICE - Provided is a storage element including a storage layer that holds information according to a magnetization state of a magnetic body, a magnetization fixing layer that has magnetization serving as a reference of the information stored in the storage layer, and an insulation layer that is formed of a non-magnetic body disposed between the storage layer and the magnetization fixing layer. The information is stored by reversing the magnetization of the storage layer using spin torque magnetization reversal occurring with a current flowing in a lamination direction of a layer configuration of the storage layer, the insulation layer, and the magnetization fixing layer, and a size of the storage layer is less than a size in which a direction of the magnetization is simultaneously changed. | 02-07-2013 |
20130134532 | MEMORY ELEMENT AND MEMORY APPARATUS - A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer. | 05-30-2013 |
20130139007 | NONVOLATILE CACHE MEMORY, PROCESSING METHOD OF NONVOLATILE CACHE MEMORY, AND COMPUTER SYSTEM - Disclosed is a nonvolatile cache memory including a nonvolatile memory part and a cache controller. The nonvolatile memory part is configured to store cache data. The cache controller is configured to control reading and writing of the cache data with respect to the nonvolatile memory part. Further, the cache controller is configured to perform, as a preparation for an interruption of power supply, standby preparation processing to generate standby state data and store the generated standby state data in the nonvolatile memory part. Further, the cache controller is configured to perform, at resumption of the power supply, restoration processing of the cache data stored in the nonvolatile memory part using the standby state data. | 05-30-2013 |
20130140658 | MEMORY ELEMENT AND MEMORY APPARATUS - A memory element includes a layered structure and a negative thermal expansion material layer. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a magnetic layer having a positive magnetostriction constant. The magnetization direction is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. | 06-06-2013 |
20130141964 | MEMORY ELEMENT AND MEMORY APPARATUS - A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer. | 06-06-2013 |
20130163314 | MEMORY ELEMENT AND MEMORY APPARATUS - A memory element includes a layered structure. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information, and the direction of the magnetization is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, has a laminated ferri-pinned structure including at least two ferromagnetic layers and a non-magnetic layer, and includes an anti-ferromagnetic oxide layer formed on any of the at least two ferromagnetic layers. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. | 06-27-2013 |
20130163315 | MEMORY ELEMENT AND MEMORY APPARATUS - A memory element includes a layered structure. The layered structure includes a memory layer, a magnetization-fixed layer, and an intermediate layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is changed depending on information, and the direction of the magnetization is changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer. The magnetization-fixed layer has magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and has a laminated ferri-pinned structure including at least two ferromagnetic layers and a non-magnetic layer. The non-magnetic layer includes Cr. The intermediate layer is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer. | 06-27-2013 |
20130163316 | MEMORY ELEMENT AND MEMORY APPARATUS - A memory element has a layered configuration, including a memory layer in which a magnetization direction is changed corresponding to information; the magnetization direction being changed by applying a current in a lamination direction of the layered configuration to record the information in the memory layer, a magnetization-fixed layer in which a magnetization direction is fixed, an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, and a perpendicular magnetic anisotropy inducing layer, the memory layer including a first ferromagnetic layer, a first bonding layer, a second ferromagnetic layer, a second bonding layer and a third ferromagnetic layer laminated in the stated order. | 06-27-2013 |
20130163317 | MEMORY ELEMENT AND MEMORY APPARATUS - There is provided a memory element having a layered structure, including a memory layer having magnetization perpendicular to a film face in which a magnetization direction is changed corresponding to information, and including a Co—Fe—B magnetic layer and at least on non-magnetic layer; the magnetization direction being changed by flowing a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to the film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, further including a laminated structure where an oxide layer, the Co—Fe—B magnetic layer and the non-magnetic layer are laminated is formed. | 06-27-2013 |
20130235872 | ROUTER AND METHOD OF SUPPLYING POWER TO MEMORY UNIT IN THE SAME - A router, includes: a routing table memory unit configured to store a routing table and be capable of reading and writing the routing table at any time, the routing table being destination information of a packet; a search engine unit which has a transfer information base memory unit and which is configured to search for a destination of the packet based on a transfer information base; a power supply unit configured to supply power to the routing table memory unit and the transfer information base memory unit; and a control unit configured to control the power supply unit such that the power is supplied to the non-volatile memory when the non-volatile memory is operated, and the power supply is interrupted when the non-volatile memory is not operated. | 09-12-2013 |
20130332661 | INFORMATION PROCESSING APPARATUS AND METHOD AND PROGRAM - There is provided an information processing apparatus including a rewrite frequency management section configured to manage a rewrite frequency of a page included in a nonvolatile primary storage apparatus having an upper limit in the rewrite frequency, and a data processing section configured, when an instruction for writing write data to a predetermined page is issued and a rewrite frequency of the predetermined page reaches a threshold value that is less than the upper limit of the rewrite frequency of the primary storage apparatus, to write the write data to another page different from the predetermined page, the other page storing no effective data and having a rewrite frequency that does not reach the threshold value. | 12-12-2013 |
20130332695 | INFORMATION PROCESSING APPARATUS AND METHOD AND COMPUTER-READABLE MEDIUM - There is provided an information processing apparatus including a primary storage apparatus configured by combining a plurality of memories each having a different upper limit of a number of possible rewrites, and an allocation management section configured to allocate a storage area of data to be stored in the primary storage apparatus to one of the plurality of memories based on a rewrite frequency of the data. | 12-12-2013 |
20140169087 | MEMORY ELEMENT AND MEMORY APPARATUS - A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer. | 06-19-2014 |
20140284741 | STORAGE ELEMENT AND STORAGE APPARATUS - [Object] To provide a storage element and a storage apparatus capable of performing writing operation in a short time without generating write errors. | 09-25-2014 |
20140319521 | MEMORY ELEMENT, MEMORY APPARATUS - [Object] To provide a memory element having well-balanced properties while ensuring the thermal stability. | 10-30-2014 |
20140319633 | MAGNETIC MEMORY ELEMENT AND MEMORY APPARATUS HAVING MULTIPLE MAGNETIZATION DIRECTIONS - A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer. | 10-30-2014 |
20140327097 | STORAGE ELEMENT AND STORAGE DEVICE - Provided is an information storage element comprising a first layer, an insulation layer coupled to the first layer, and a second layer coupled to the insulation layer opposite the first layer. The first layer has a transverse length that is approximately 45 nm or less, or an area that is approximately 1,600 nm | 11-06-2014 |
20140328119 | STORAGE ELEMENT AND MEMORY - A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer. | 11-06-2014 |
20140332916 | MEMORY ELEMENT AND MEMORY DEVICE - There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer. | 11-13-2014 |
20140346626 | MEMORY ELEMENT AND MEMORY APPARATUS - According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure. The magnetization-fixed layer has magnetization parallel or antiparallel to the magnetization direction of the memory layer and comprises a laminated ferripinned structure including a plurality of ferromagnetic layers and one or more non-magnetic layers, and includes a layer comprising an antiferromagnetic material formed on a first ferromagnetic layer of the plurality of ferromagnetic layers and situated between the first ferromagnetic layer and the non-magnetic layer. The tunnel insulating layer is located between the memory layer and the magnetization-fixed layer. | 11-27-2014 |
20140374752 | PERPENDICULAR MAGNETIZATION STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer. | 12-25-2014 |
20150019799 | MULTI-LEVEL MEMORY, MULTI-LEVEL MEMORY WRITING METHOD, AND MULTI-LEVEL MEMORY READING METHOD - A memory comprising a memory array unit including a plurality of data units, and a controller. The controller is configured to receive data; convert the data into converted data using a conversion rule for converting a data piece into another data piece, wherein the conversion rule is selected based on the data received and independent of current data written in a data unit; and write the converted data and a conversion rule identifier corresponding to the conversion rule into the data unit. | 01-15-2015 |