Patent application number | Description | Published |
20090096049 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 04-16-2009 |
20090189235 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR THE SAME, AND IMAGING APPARATUS - A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges. | 07-30-2009 |
20090256226 | SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE - Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed. | 10-15-2009 |
20100025569 | SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND IMAGING DEVICE - A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films. | 02-04-2010 |
20100118170 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween. | 05-13-2010 |
20100128161 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging device includes, on a semiconductor substrate, a pixel portion having a plurality of pixels provided with a photoelectric conversion portion, which photoelectrically converts incident light to obtain a signal charge and a pixel transistor portion, which converts the signal charge read from the photoelectric conversion portion to a voltage, wherein an element isolation region disposed in the pixel portion includes an insulating film buried in a trench disposed in the semiconductor substrate, and the insulating film includes an insulating film having a negative charge. | 05-27-2010 |
20100141816 | SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SAME, AND CAMERA - A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface. | 06-10-2010 |
20100193669 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGING APPARATUS - Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device | 08-05-2010 |
20100200942 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 08-12-2010 |
20100203669 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 08-12-2010 |
20110019042 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes: a light incident side; a circuit formation surface being opposite to the light incident side; and an inorganic photoelectric conversion unit having a pn junction and an organic photoelectric conversion unit including an organic photoelectric conversion layer, which are laminated in the same pixel in a depth direction from the light incident side and on which light is incident without passing through a color filter. Signals of the inorganic photoelectric conversion unit and the organic photoelectric conversion unit are read on the circuit formation surface. | 01-27-2011 |
20110058062 | SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SAME, AND CAMERA - A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface. | 03-10-2011 |
20110089312 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 04-21-2011 |
20110089313 | SOLID STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid state imaging device having a light sensing section that performs photoelectric conversion of incident light includes: an insulating layer formed on a light receiving surface of the light sensing section; a layer having negative electric charges formed on the insulating layer; and a hole accumulation layer formed on the light receiving surface of the light sensing section. | 04-21-2011 |
20110143488 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD FOR THE SAME, AND IMAGING APPARATUS - A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges. | 06-16-2011 |
20110156104 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device including a semiconductor substrate, a photoelectric conversion portion interposed between a lower electrode and an upper electrode, a contact plug formed so as to connect the lower electrode and the semiconductor substrate in order to read signal charges generated in the photoelectric conversion portion to the semiconductor substrate side, a vertical type transmitting path configured by sequentially laminating a connection portion for electrically connecting the contact plug to the semiconductor substrate, a charge accumulation layer for accumulating the signal charges read to the connection portion, and a potential barrier layer configuring a potential barrier between the connection portion and the charge accumulation layer in a vertical direction of the semiconductor substrate, and a charge reading portion configured to read the signal charges accumulated in the charge accumulation layer to the circuit forming surface side of the semiconductor substrate. | 06-30-2011 |
20110216212 | SOLID-STATE IMAGING DEVICE, METHOD OF FABRICATING SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a substrate, a photoelectric conversion element provided on the light incidence side of the substrate and including a photoelectric conversion film sandwiched between a first electrode provided separately for each of pixels, and a second electrode provided opposite the first electrode, the photoelectric conversion film being made of an organic material or an inorganic material and generating a signal charge according to the quantity of incident light, an amplifier transistor having an amplifier gate electrode connected to the first electrode, and a voltage control circuit that is connected to the second electrode, and supplies a desired voltage to the second electrode. | 09-08-2011 |
20110269259 | SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE - A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed. | 11-03-2011 |
20120104479 | SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING THE SAME, AND IMAGING DEVICE - A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films. | 05-03-2012 |
20120147241 | SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SAME, AND CAMERA - A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accummulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized. | 06-14-2012 |
20120286137 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer. | 11-15-2012 |
20120318959 | IMAGING DEVICE, DRIVING METHOD AND ELECTRONIC APPARATUS - Disclosed herein is an imaging device including: a plurality of pixels disposed to form a matrix having pixel rows, the pixels including a pixel electrode formed on a silicon substrate for one of the pixels by being separated away from another pixel electrodes formed for one of the other pixels, a photoelectric conversion film formed on the pixel electrode, and an opposite electrode formed on the photoelectric conversion film; and a driving section configured to apply an electric potential to the photoelectric conversion film on each of the pixel rows at least having read timings different from each other with a predetermined timing outside an exposure period of the pixels in a direction opposite to that of an electric potential applied to the photoelectric conversion film during the exposure period of the pixels. | 12-20-2012 |
20130033628 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A solid state imaging device that includes a substrate having oppositely facing first and second surfaces and a photoelectric conversion unit layer having a light incident side facing away from the substrate. The substrate includes a first photoelectric conversion unit and a second photoelectric conversion and the photoelectric conversion layer includes a third photoelectric conversion unit. | 02-07-2013 |
20130299675 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND IMAGING APPARATUS - Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device | 11-14-2013 |
20140051204 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS - A solid-state imaging device includes a photoelectric conversion section which is disposed on a semiconductor substrate and which photoelectrically converts incident light into signal charges, a pixel transistor section which is disposed on the semiconductor substrate and which converts signal charges read out from the photoelectric conversion section into a voltage, and an element isolation region which is disposed on the semiconductor substrate and which isolates the photoelectric conversion section from an active region in which the pixel transistor section is disposed. The pixel transistor section includes a plurality of transistors. Among the plurality of transistors, in at least one transistor in which the gate width direction of its gate electrode is oriented toward the photoelectric conversion section, at least a photoelectric conversion section side portion of the gate electrode is disposed within and on the active region with a gate insulating film therebetween. | 02-20-2014 |
20140209876 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR UNIT INCLUDING THE SAME - A solid-state image pickup unit including a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel includes a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer, a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section, and a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer. | 07-31-2014 |
20140306276 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. | 10-16-2014 |
20140327052 | SOLID-STATE IMAGING DEVICE, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE - Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed. | 11-06-2014 |
20140353651 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING UNIT, AND ELECTRONIC APPARATUS - A semiconductor device includes, in order on a substrate, an organic semiconductor layer, an inorganic film, and a protective film. The inorganic film and the protective film each have a peripheral edge portion that is formed in an outer region compared to a peripheral edge portion of the organic semiconductor layer. | 12-04-2014 |
20150021463 | IMAGING DEVICE, DRIVING METHOD AND ELECTRONIC APPARATUS WITH ELECTRIC POTENTIAL APPLIED OUTSIDE EXPOSURE PERIOD - Disclosed herein is an imaging device including: a plurality of pixels disposed to form a matrix having pixel rows, the pixels including a pixel electrode formed on a silicon substrate for one of the pixels by being separated away from another pixel electrodes formed for one of the other pixels, a photoelectric conversion film formed on the pixel electrode, and an opposite electrode formed on the photoelectric conversion film; and a driving section configured to apply an electric potential to the photoelectric conversion film on each of the pixel rows at least having read timings different from each other with a predetermined timing outside an exposure period of the pixels in a direction opposite to that of an electric potential applied to the photoelectric conversion film during the exposure period of the pixels. | 01-22-2015 |
20150041781 | SOLID-STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREOF - There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region | 02-12-2015 |
20150054105 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on which a wiring layer of a semiconductor substrate is formed, performs photoelectric conversion with respect to light in a predetermined wavelength region, and transmits light in other wavelength regions; and a photoelectric conversion layer which is provided in the semiconductor substrate, and performs the photoelectric conversion with respect to light in other wavelength regions which has transmitted the photoelectric conversion film, in which input light is incident from the second surface side with respect to the photoelectric conversion film and the photoelectric conversion layer. | 02-26-2015 |