Patent application number | Description | Published |
20090072399 | SEMICONDUCTOR MOUNTING BONDING WIRE - There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof. | 03-19-2009 |
20100327450 | SEMICONDUCTOR DEVICE BONDING WIRE AND WIRE BONDING METHOD - It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness. | 12-30-2010 |
20110120594 | BONDING WIRE FOR SEMICONDUCTOR - It is an object of the present invention to provide a multilayer wire which can accomplish both ball bonding property and wire workability simultaneously, and which enhances a loop stability, a pull strength, and a wedge bonding property. A semiconductor bonding wire comprises a core member mainly composed of equal to or greater than one kind of following elements: Cu, Au, and Ag, and an outer layer formed on the core member and mainly composed of Pd. A total hydrogen concentration contained in a whole wire is within a range from 0.0001 to 0.008 mass %. | 05-26-2011 |
20120038042 | LEAD-FREE SOLDER ALLOY, SOLDER BALL, AND ELECTRONIC MEMBER COMPRISING SOLDER BUMP - A lead-free solder alloy, a solder ball and an electronic member comprising a solder bump which enable the prevention of the occurrence of yellow discoloration on the surface of a solder after soldering, the surface of a solder bump after the formation of the bump in a BGA, and the surface of a solder bump after a burn-in test of a BGA. Specifically disclosed are: a lead-free solder alloy; a solder ball; and an electronic member comprising a solder bump, containing at least one additive element selected from Li, Na, K, Ca, Be, Mg, Sc, Y, lanthanoid series elements, Ti, Zr, Hf, Nb, Ta, Mo, Zn, Al, Ga, In, Si and Mn in the total amount of 1 ppm by mass to 0.1% by mass inclusive, with the remainder being 40% by mass or more of Sn. | 02-16-2012 |
20120094121 | COPPER ALLOY BONDING WIRE FOR SEMICONDUCTOR - The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities. | 04-19-2012 |
20120104613 | BONDING WIRE FOR SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 μm in thickness. | 05-03-2012 |
20120118610 | BONDING WIRE FOR SEMICONDUCTOR - There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume. | 05-17-2012 |
20120223430 | SOLDER BALL FOR SEMICONDUCTOR PACKAGING AND ELECTRONIC MEMBER USING THE SAME - The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 μm as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball. | 09-06-2012 |
20130236734 | METAL FOIL FOR BASE MATERIAL AND PRODUCING METHOD THEREOF - A metal foil including: a steel layer whose thickness is 10 to 200 μm; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of μm and a thickness of the Al-containing metal layer is T in units of μm, the granular alloys satisfy x≦0.5T. | 09-12-2013 |
20130236737 | METAL FOIL FOR BASE MATERIAL - A metal foil including: a steel layer whose thickness is 10 to 200 μm; an alloy layer which contains Fe and Al and which is formed on the steel layer; and an Al-containing metal layer arranged on the alloy layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and a thickness of the alloy layer is 0.1 to 8 μm and the alloy layer contains an Al | 09-12-2013 |
20130306352 | BONDING WIRE FOR SEMICONDUCTOR - There is provided a bonding wire for semiconductor, capable of ensuring a favorable wedge bondability even when bonded to a palladium-plated lead frame, superior in oxidation resistivity and having a core wire of copper or a copper alloy. This bonding wire comprises: a core wire of copper or a copper alloy; a coating layer containing palladium and having a thickness of 10 to 200 nm; and an alloy layer formed on a surface of the coating layer, such alloy layer containing a noble metal and palladium and having a thickness of 1 to 80 nm. The aforementioned noble metal is either silver or metal, and a concentration of such noble metal in the alloy layer is not less than 10% and not more than 75% by volume. | 11-21-2013 |
20140054766 | LEAD-FREE SOLDER BUMP BONDING STRUCTURE - According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/μm] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration. | 02-27-2014 |
20150136209 | POLYIMIDE LAYER-CONTAINING FLEXIBLE SUBSTRATE, POLYIMIDE LAYER-CONTAINING SUBSTRATE FOR FLEXIBLE SOLAR CELL, FLEXIBLE SOLAR CELL, AND METHOD FOR PRODUCING SAME - A flexible substrate has heat resistance to endure the high temperature such as sintering of a photovoltaic conversion layer of a compound-type thin film solar cell, can prevent permeation and/or diffusion of metal into the photovoltaic conversion layer, and can be used for many applications. The polyimide layer-containing flexible substrate has a metal substrate of metal foil made of ordinary steel or stainless steel having a coefficient of thermal expansion in a plane direction of not more than 15 ppm/K, or a metal substrate of metal foil made of that ordinary steel or stainless steel on the surface of which a metal layer comprising one of copper, nickel, zinc, or aluminum or an alloy layer of the same is provided, over which a polyimide layer having a layer thickness of 1.5 to 100 μm and a glass transition point temperature of 300 to 450° C. is formed. | 05-21-2015 |
20150146394 | SOLDER BALL AND ELECTRONIC MEMBER - A solder ball which suppresses generation of voids in a joint, excels in a thermal fatigue property, and can also obtain a good drop impact resistance property, and an electronic member using the same are provided. The solder ball is formed of a Sn—Bi type alloy containing Sn as a main element, 0.3 to 2.0 mass % of Cu, 0.01 to 0.2 mass % of Ni, and 0.1 to 3.0 mass % of Bi, and an intermetallic compound of (Cu, Ni) | 05-28-2015 |
Patent application number | Description | Published |
20120256171 | PHOSPHINE OXIDE COMPOUND, ORGANIC ELECTROLUMINESCENCE ELEMENT, PRODUCTION METHOD AND USES THEREOF - A compound having a stable deposition rate suitable for forming an electron-transporting layer of an organic El element. The compound is represented by the following formula (1): | 10-11-2012 |
20120256536 | PHOSPHINE OXIDE COMPOUND, ORGANIC ELECTROLUMINESCENCE ELEMENT, PRODUCTION METHOD AND USES THEREOF - A compound having a stable deposition rate suitable for forming an electron-transporting layer of an organic El element. The compound is represented by the following formula (1): | 10-11-2012 |
20140246124 | ANNEALING SEPARATOR FOR GRAIN-ORIENTED ELECTROMAGNETIC STEEL SHEET - An annealing separator for a grain oriented electrical steel sheet does not inhibit the flowability of an atmospheric gas during the final annealing of the coil-shaped product and can prevent the occurrence of surface roughness. The annealing separator contains 0.01-0.05 mass % of Cl, 0.05-0.15 mass % of B, 0.1-2 mass % of CaO and 0.03-1.0 mass % of P | 09-04-2014 |
20150162600 | CARBON MATERIAL, CARBONACEOUS MATERIAL FOR BATTERY ELECTRODE, AND BATTERY - A scale-like carbon material and carbon material for a battery electrode suitable for use as an electrode material for an aqueous-electrolyte secondary battery, wherein the ratio I | 06-11-2015 |
20150255793 | CARBON MATERIAL FOR NEGATIVE ELECTRODE FOR LITHIUM ION SECONDARY BATTERY, MANUFACTURING PROCESS THEREFOR AND USE THEREOF - A carbon material for negative electrodes in lithium ion secondary battery, wherein a specific surface area is not less than 1.5 m | 09-10-2015 |
20150263348 | CARBON MATERIAL, CARBON MATERIAL FOR BATTERY ELECTRODE, AND BATTERY - A carbon material containing boron atom in an amount of 0.001 to 0.5 mass %, in which the average interplanar spacing (d002) of plane (002) is 0.337 nm or less. By observing optical structures in cross-section of formed bodies made of the carbon material, when areas are accumulated from a smallest structure in an ascending order, SOP represents an area of an optical structure whose accumulated area corresponds to 60% of the total area of all optical structures; when the structures are counted from a structure of a smallest aspect ratio in an ascending order, AROP represents the aspect ratio of the structure which ranks at the position of 60% in total number of all the structures; and when D50 represents an average particle diameter; SOP, AROP and D50 satisfy the following relationship: 1.5≦AROP≦6 and 0.2×D50≦(SOP×AROP) | 09-17-2015 |
Patent application number | Description | Published |
20090073285 | DATA PROCESSING APPARATUS AND DATA PROCESSING METHOD - A data processing apparatus includes: an image capture mode storing section that stores image capture modes each associated with a feature value related to a subject as a selection condition for selecting an image capture mode candidate according to the subject; a feature value extracting section that extracts a feature value included in captured data that is captured by converting incident light from the subject; an image capture mode candidate selecting section that selects image capture mode candidates from among the image capture modes stored in the image capture mode storing section, on the basis of the feature value extracted from the feature value extracting section; and a display control section that displays on a display section the image capture mode candidates selected by the image capture mode candidate selecting section. | 03-19-2009 |
20100194912 | IMAGING APPARATUS, IMAGING APPARATUS CONTROL METHOD, AND COMPUTER PROGRAM PRODUCT, WITH EYE BLINK DETECTION FEATURES - An imaging apparatus includes a focus control unit that sets an image area including eyes, which is included in an input image inputted in the imaging apparatus, as a range finding area for calculation of a subject distance and acquires an evaluation value based on contrast of the range finding area to detect a focus position and a blink detecting unit that detects presence or absence of a blink on the basis of image analysis in the range finding area. The focus control unit inputs blink detection information in the blink detection unit, identifies evaluation value data in a blink period and a non-blink period, and executes processing for detecting a focus position on the basis of only an evaluation value in a period judged as the non-blink period. | 08-05-2010 |
20100194963 | DISPLAY CONTROL APPARATUS, IMAGE CAPTURING APPARATUS, DISPLAY CONTROL METHOD, AND PROGRAM - A user-preferred image is easily displayed for a plurality of images generated by bracketing capture. A recording control unit | 08-05-2010 |
20110134273 | IMAGING APPARATUS, CONTROL METHOD OF IMAGING APPARATUS, AND COMPUTER PROGRAM - An imaging apparatus includes a face detecting unit detecting a face region from an input image input to the imaging apparatus and a control unit calculating a distance to a subject on the basis of the face size detected by the face detection unit and displaying distance identification information indicating a distance corresponding to the calculated distance in a display unit. | 06-09-2011 |
20110292272 | IMAGING APPARATUS, IMAGING SYSTEM, AND IMAGING APPARATUS CONTROL METHOD AND PROGRAM - In an imaging apparatus, an imager generates an imaged picture by converting incident light from a subject that is incident via a focus lens. A setting unit sets, as a movement range for the focus lens, a range of focus lens positions corresponding to imaging magnifications where the rate of change in the imaging magnification lies within a fixed range from a basis, the basis being an imaging magnification corresponding to the position of the focus lens. A focus controller configured to conduct focus control with respect to the subject by moving the focus lens in the set movement range. | 12-01-2011 |
20110292276 | IMAGING APPARATUS, IMAGING SYSTEM, CONTROL METHOD OF IMAGING APPARATUS, AND PROGRAM - An imaging apparatus is provided which includes an imaging section which converts incident light which is incident from a subject via a lens and generates an imaging image; a selection section which, in regard to each of a plurality of ranging areas arranged in the generated imaging image, obtains a subject distance which is a distance from the lens to a subject included in the ranging area and an MTF for each of the ranging areas in relation to the lens, and selects a ranging area which includes a subject to be a focusing target as a focusing target area based on the obtained subject distance and MTF; and a focus control section which performs focus control so as to focus on a subject included in the selected focusing target area. | 12-01-2011 |
20130308032 | DISPLAY CONTROL APPARATUS, IMAGE CAPTURING APPARTUS, DISPLAY CONTROL METHOD, AND PROGRAM - A user-preferred image is easily displayed for a plurality of images generated by bracketing capture. A recording control unit adds the same group identifier to a plurality of captured images generated by the same bracketing-capture operation, allocates the plurality of captured images to the same folder, and records the plurality of captured images on a recording unit as bracketing-captured images. A priority image setting unit adds priority information to a bracketing-captured image selected by a user among the bracketing-captured images recorded on the recording unit, and sets a priority image. In addition, the priority image setting unit allocates the priority image to a main folder, and allocates bracketing-captured images other than the priority image to a sub-folder. In a predetermined display mode, a display control unit displays only the priority image among the bracketing-captured images on the display unit on the basis of the priority information. | 11-21-2013 |