Patent application number | Description | Published |
20100020372 | HOLOGRAPHIC RECORDING MEDIUM AND OPTICAL INFORMATION RECORDING/REPRODUCING APPARATUS - A holographic recording medium is provided. The medium includes a recording layer. The recording layer includes a polymer matrix, a polymerizable monomer and a photopolymerization initiator. The polymerizable monomer includes a monomer being expressed in the following general formula (M1), (M2), or (M3). | 01-28-2010 |
20100074074 | METHOD AND APPARATUS FOR RECORDING OPTICAL INFORMATION, AND METHOD AND APPARATUS FOR REPRODUCING OPTICAL INFORMATION - An optical information recording apparatus includes a first optical system that radiates an information beam that carries information onto a recording medium; a second optical system that radiates reference beams onto the recording medium; a radiation position specifying unit that specifies a plurality of recording spots positioned within a radiation range of the reference beams; and an incident angle obtaining unit that specifies an incident angle of the reference beams that is used for recording an i'th interference fringe into a second recording spot adjacent to a first recording spot, as a value obtained by adding a product of 1/(1+m) and an absolute value of a difference between an incident angle of a first reference beam used for recording an i'th interference fringe into the first recording spot and an incident angle of a second reference beam used for recording an (i+1)'th interference fringe into the first recording spot. | 03-25-2010 |
20130248962 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; an organic molecular layer formed on the semiconductor layer, the organic molecular layer including a plurality of organic molecules, each of the organic molecules includes a tunnel insulating unit of alkyl chain having one end bonded to the semiconductor layer, a charge storing unit, and a bonding unit configured to bond the other end of the alkyl chain to the charge storing unit; a block insulating film formed on the organic molecular layer; and a gate electrode formed on the block insulating film. | 09-26-2013 |
20140061762 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film. | 03-06-2014 |
20140061763 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film. | 03-06-2014 |
20140231897 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating layer; an organic molecular layer, which is formed between the semiconductor layer and the block insulating layer, and contains first organic molecules and second organic molecules, and in which the first organic molecule has a first alkyl chain or a first alkyl halide chain on the semiconductor layer side and a charge trapping unit on the block insulating layer side, and the second organic molecule has a second alkyl chain or a second alkyl halide chain on the semiconductor layer side and a hydroxy group, an ether group, a carboxyl group or an ester group on the block insulating layer side; and a control gate electrode formed on the block insulating layer. | 08-21-2014 |
20140231898 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device according to an embodiment includes: a semiconductor layer; a block insulating film; an organic molecular layer, which is formed between the semiconductor layer and the block insulating film, and provided with a first organic molecular film on the semiconductor layer side containing first organic molecules and a second organic molecular film on the block insulating film side containing second organic molecules, and in which the first organic molecule has a charge storing unit and the second organic molecule is an amphiphilic organic molecule; and a control gate electrode formed on the block insulating film. | 08-21-2014 |
20150035045 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film that is formed on the semiconductor layer and includes a first organic molecular film including first organic molecules each having an alkyl molecular chain as the main chain; a charge storage layer formed on the tunnel insulating film, the charge storage layer being made of an inorganic material; a block insulating film formed on the charge storage layer; and a control gate electrode formed on the block insulating film. | 02-05-2015 |
20150048438 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device of an embodiment includes: a semiconductor layer; a tunnel insulating film formed on the semiconductor layer; an organic molecular layer that is formed on the tunnel insulating film, and includes first organic molecules and second organic molecules having a smaller molecular weight than the first organic molecules, the first organic molecules each including a first alkyl chain or a first alkyl halide chain having one end bound to the tunnel insulating film, the first organic molecules each including a charge storage portion bound to the other end of the first alkyl chain or the first alkyl halide chain, the second organic molecules each including a second alkyl chain or a second alkyl halide chain having one end bound to the tunnel insulating film; a block insulating film formed on the organic molecular layer; and a control gate electrode formed on the block insulating film. | 02-19-2015 |
Patent application number | Description | Published |
20120195100 | SEMICONDUCTOR DEVICE AND METHOD OF CONTROLLING SEMICONDUCTOR DEVICE - Provided is a semiconductor device including: a memory cell having a variable resistance device; and a control unit that controls a voltage applied to the memory cell, wherein the variable resistance device includes a lower electrode contains a first metal material, an upper electrode containing a second metal material, and an insulating film containing oxygen, the first metal material has a normalized oxide formation energy higher than that of the second metal material, and the control unit applies a positive voltage to the upper electrode at the time of an operation of increasing a resistance value of the insulating film and an operation of decreasing the resistance value thereof, and applies a positive voltage to the lower electrode at the time of an operation of reading out the resistance value of the insulating film. | 08-02-2012 |
20130064001 | RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE - To provide a resistance change nonvolatile memory device performing a stable switching operation at a low cost. The resistance change nonvolatile memory device has a first wiring, an interlayer insulating layer formed thereon, a second wiring formed thereon, and a resistance change element formed between the first wiring and the second wiring. The interlayer insulating layer between the first wiring and the second wiring has a hole having a width not greater than that of the first wiring. The resistance change element is in contact with the first wiring and has a lower electrode at the bottom of the hole, a resistance change layer thereon, and an upper electrode thereon. They are formed inside the hole. The first wiring contains copper and the lower electrode contains at least one metal selected from the group consisting of ruthenium, tungsten, cobalt, platinum, gold, rhodium, iridium, and palladium. | 03-14-2013 |
20130064002 | RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF OPERATING RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE - A resistance change nonvolatile memory device includes with a first electrode, a resistance change portion provided on the first electrode, and a second electrode provided on the resistance change portion. The resistance change portion is equipped with a resistance change layer provided on the first electrode and undergoing a change in resistance with an applied voltage and a stable layer provided on the resistance change layer and forming a filament. The resistance change layer and the stable layer are made of metal oxides different from each other. The oxide formation energy of the resistance change layer is higher than that of the stable layer. The resistance change layer has such a film thickness as to permit the resistance of the resistance change portion in an Off state to fall within a range determined by the film thickness. | 03-14-2013 |
20130077379 | SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - In a case where a DRAM and a ReRAM are mounted together, a manufacturing cost thereof is reduced while maintaining performance of a capacitance element and a variable resistance element. A semiconductor memory device includes a variable resistance element and a capacitance element. The variable resistance element has a cylinder type MIM structure with a first depth, and is designed for a variable resistance type memory. The capacitance element has a cylinder type MIM structure with a second depth deeper than the first depth, and is designed for a DRAM. | 03-28-2013 |
20130336043 | RESISTANCE CHANGE MEMORY AND FORMING METHOD OF THE RESISTANCE CHANGE DEVICE - A resistance change memory has a resistance change device and a control circuit for controlling application of voltage to the resistance change device. The resistance change device has a first electrode, a second electrode, and a resistance change layer interposed between the first electrode and the second electrode. A material for the second electrode includes one of members selected from the group consisting of W, Ti, Ta, and nitrides thereof. During forming of the resistance change device, the control circuit performs a second forming treatment succeeding to a first forming treatment. The first forming treatment includes application of voltage such that the potential of the first electrode is higher than the potential of the second electrode. The second forming treatment includes application of voltage such that the potential of the second electrode is higher than the potential of the first electrode. | 12-19-2013 |
Patent application number | Description | Published |
20100103145 | PORTABLE INFORMATION TERMINAL, HOLD STATUS SWITCH METHOD AND RECORDING MEDIUM - A portable information terminal is provided which includes detecting means for detecting an operation on a display screen, a button for an operation related to a content reproduction, a changeover switch, and a control unit which switches hold statuses of the detecting means and the button according to an operation to the changeover switch. | 04-29-2010 |
20110160996 | NAVIGATION DEVICE, MOVEMENT HISTORY RECORDING METHOD, AND NON-TRANSITORY COMPUTER PROGRAM STORAGE DEVICE - A navigation device, method and computer program storage device cooperate to seamlessly provide electronic navigational assistance, despite the user electing to use different modes to transportation, such as motored vehicle, by foot, or by bicycle, for example during a single trip. In addition to prospective (forward looking) navigation assistance, retrospective assistance is offered as well by the device collecting and storing actual traversal path of the device even when multiple modes of transportation are used in a single trip. | 06-30-2011 |
20130091472 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND RECORDING MEDIUM - An information processing apparatus, method, and recording medium which acquire movement trace information and automatically determine a division point for dividing the movement trace information based on an analysis result of the movement trace information. Optionally a movement trace track is generated from the movement trace. Various criteria used for how the division points are generated include using distance and time; altitudes; repeated track; mode of transportation; and lapse of data, for example. | 04-11-2013 |
20130116923 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, PROGRAM, AND RECORDING MEDIUM - There is provided an information processing apparatus including, a track list generation unit that generates a track list that is a list of track groups including at least a movement trajectory track generated from movement trajectory information containing position information and time information corresponding to the position information, and a display control unit that causes a display device to display a list screen including the track list. | 05-09-2013 |
20130142495 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, PROGRAM, AND RECORDING MEDIUM - An information processing apparatus, method and computer-readable medium that generates a plurality of movement trace tracks based on stored position information, generates a content track based on acquired content information, generates a track list by combining the plurality of movement trace tracks and the content track, and outputs the track list. | 06-06-2013 |
Patent application number | Description | Published |
20100224871 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE - The present application provides a thin film transistor and a method of manufacturing same capable of suppressing diffusion of aluminum to oxide semiconductor and selectively etching oxide semiconductor and aluminum oxide. The thin film transistor includes: a gate electrode; a channel layer whose main component is oxide semiconductor; a gate insulating film provided between the gate electrode and the channel layer; a sealing layer provided on the side opposite to the gate electrode, of the channel layer; and a pair of electrodes which are in contact with the channel layer and serve as a source and a drain. The sealing layer includes at least a first insulating film made of a first insulating material, and a second insulating film made of a second insulting material having etching selectivity to each of the oxide semiconductor and the first insulating material and provided between the first insulating film and the channel layer. | 09-09-2010 |
20110140116 | THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC DEVICE - The present invention provides a thin film transistor using an oxide semiconductor as a channel, controlling threshold voltage to a positive direction, and realizing improved reliability. The thin film transistor includes: a gate electrode; a pair of source/drain electrodes; an oxide semiconductor layer provided between the gate electrode and the pair of source/drain electrodes and forming a channel; a first insulating film as a gate insulating film provided on the gate electrode side of the oxide semiconductor layer; and a second insulating film provided on the pair of source/drain electrodes side of the oxide semiconductor layer. The first insulating film and/or the second insulating film contain/contains fluorine. | 06-16-2011 |
20110180802 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - Provided are a thin film transistor that is capable of suppressing desorption of oxygen and others from an oxide semiconductor layer, and reducing the time to be taken for film formation, and a display device provided therewith. A gate insulation film | 07-28-2011 |
20110186853 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT - A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method. | 08-04-2011 |
20110248270 | THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC UNIT - A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm | 10-13-2011 |
20110309876 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer. | 12-22-2011 |
20120228623 | DISPLAY DEVICE AND ELECTRONIC DEVICE - Disclosed herein is a display device including: a thin film transistor; and a wiring layer; wherein the thin film transistor includes a semiconductor layer, a gate electrode disposed so as to be opposed to the semiconductor layer, the gate electrode being different in thickness from the wiring layer, and a gate insulating film between the semiconductor layer and the gate electrode. | 09-13-2012 |
20130087795 | DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC UNIT - A display device includes: a thin film transistor; and a wiring layer; the thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode made of a light transmissive material and electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material, the second electrode being electrically connected to each of the semiconductor layer and the wiring layer, wherein a difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material. | 04-11-2013 |
20130187164 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY UNIT, AND ELECTRONIC APPARATUS - There are provided a thin-film transistor suppressing influence of light and having stable characteristics, and a method of manufacturing the thin-film transistor, as well as a display unit and an electronic apparatus. The thin-film transistor includes: a gate electrode; an oxide semiconductor film having a channel region that faces the gate electrode; and a protective film covering at least the channel region and containing an aluminum lower oxide (Al | 07-25-2013 |
20130240878 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor comprising: a substrate; a gate electrode on the substrate; a gate insulation film on the gate electrode; an oxide semiconductor layer on the gate insulation film; a channel protection film on the oxide semiconductor layer; source and drain electrodes on the channel protection film; and a passivation film on the source and drain electrodes, wherein, (a) each of the gate insulation film, and passivation film comprises a laminated structure and includes a first layer made of aluminum oxide and a second layer made of an insulation material including silicon, and (b) the passivation film covers edges of the oxide semiconductor layer. The transistor is capable of suppressing desorption of oxygen and from the oxide semiconductor layer and reducing the time for film formation thereof. | 09-19-2013 |
20130270566 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer. | 10-17-2013 |
20140124781 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT - A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method. | 05-08-2014 |
20140291639 | SEMICONDUCTOR DEVICE, DISPLAY UNIT, AND ELECTRONIC APPARATUS - Provided is a semiconductor device that includes: a transistor; an oxide semiconductor film; a first conductive film electrically connected to the oxide semiconductor film; and a first insulating film provided between the first conductive film and the oxide semiconductor film. | 10-02-2014 |
20150060851 | DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC UNIT - A display device includes a thin film transistor and a wiring layer. The thin film transistor including a control electrode, a semiconductor layer facing the control electrode, a first electrode electrically connected to the semiconductor layer, and a second electrode including a metal film having resistance lower than that of the light transmissive material. The second electrode is electrically connected to each of the semiconductor layer and the wiring layer. A difference in ionization tendency between a material configuring the metal film and a conductive material configuring a part or whole of the wiring layer is smaller than a difference in ionization tendency between the light transmissive material and the conductive material. | 03-05-2015 |