Patent application number | Description | Published |
20080211567 | BIDIRECTIONAL SWITCH AND METHOD FOR DRIVING THE SAME - A bidirectional switch includes a field-effect transistor having a first ohmic electrode, a second ohmic electrode and a gate electrode, and a control circuit for controlling between a conduction state and a cut-off state by applying a bias voltage to the gate electrode. The control circuit applies the bias voltage from the first ohmic electrode as a reference when a potential of the second ohmic electrode is higher than the potential of the first ohmic electrode, and applies the bias voltage from the second ohmic electrode as a reference when the potential of the second electrode is lower than the potential of the first ohmic electrode. | 09-04-2008 |
20090166677 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: a semiconductor substrate; a diode having a cathode formed on a first surface side of the semiconductor substrate and an anode formed on a second surface side of the semiconductor substrate; and a transistor formed over the semiconductor substrate. The transistor includes a semiconductor layer laminate formed over the semiconductor substrate, a source electrode and a drain electrode that are formed spaced apart from each other over the semiconductor layer laminate, and a gate electrode formed between the source electrode and the drain electrode. The source electrode is electrically connected to the anode, and the drain electrode is electrically connected to the cathode. | 07-02-2009 |
20100097105 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a semiconductor layer stack | 04-22-2010 |
20100127652 | MOTOR DRIVING CIRCUIT - A motor driving circuit includes a three-phase inverter circuit | 05-27-2010 |
20100135053 | POWER CONVERSION CIRCUIT - A power conversion circuit includes a bidirectional switch | 06-03-2010 |
20100207164 | FIELD EFFECT TRANSISTOR - A field effect transistor includes a first nitride semiconductor layer | 08-19-2010 |
20100213503 | BIODIRECTIONAL SWITCH - A bidirectional switch includes a plurality of unit cells | 08-26-2010 |
20100283060 | Field effect transistor - A material of a gate electrode is a conductive oxide having a higher work function than that of conventionally used Pd and so on, thereby achieving a normally-off transistor without reducing the sheet carrier concentration of a heterojunction. It is thus possible to achieve a normally-off operation while reducing an increase in the specific on-state resistance. | 11-11-2010 |
20100321363 | PLASMA DISPLAY PANEL DRIVING DEVICE AND PLASMA DISPLAY - A plasma display panel driving device includes an electrode driving unit for generating a drive pulse to be applied to an electrode of a plasma display panel. The electrode driving unit has a plurality of switches. At least one of the plurality of switches is a switch device including a dual-gate semiconductor device. The dual-gate semiconductor device | 12-23-2010 |
20110248337 | Field effect transistor - A material of a gate electrode is a conductive oxide having a higher work function than that of conventionally used Pd and so on, thereby achieving a normally-off transistor without reducing the sheet carrier concentration of a heterojunction. It is thus possible to achieve a normally-off operation while reducing an increase in the specific on-state resistance. | 10-13-2011 |
20110284928 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor layer stack formed on a substrate, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor layer stack, and are spaced from each other, a first control layer formed between the first ohmic electrode and the second ohmic electrode, and a first gate electrode formed on the first control layer. The first control layer includes a lower layer, an intermediate layer which is formed on the lower layer, and has lower impurity concentration than the lower layer, and an upper layer which is formed on the intermediate layer, and has higher impurity concentration than the intermediate layer. | 11-24-2011 |
20120001200 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: a semiconductor chip; a protective film and an insulating film sequentially stacked over the semiconductor chip, and each having openings that expose source, drain, and gate pads; a heat dissipation terminal made of a material having a higher thermal conductivity than the insulating film; connection terminals formed on the source, drain, and gate pads and surrounded by the insulating film; and a mount substrate having connection pads. The semiconductor chip has a source electrode having a plurality of source fingers, a drain electrode having a plurality of drain fingers, and a gate electrode having a plurality of gate fingers. The source, drain, and gate pads are connected to the source electrode, the drain electrode, and the gate electrode, respectively. The connection terminals are respectively connected to the connection pads. The heat dissipation terminal is in close contact with the mount substrate. | 01-05-2012 |
20120099357 | POWER CONVERTER - A power converter includes an input terminal configured to be connected to a power supply, an output terminal, and a first switching element coupled between the input terminal and the output terminal. The first switching element includes a semiconductor multilayer structure formed on a substrate and made of a nitride semiconductor, a gate electrode formed on the semiconductor multilayer structure, a first and a second ohmic electrode, and a back electrode formed on a back surface of the substrate. A potential is supplied from the power supply connected to the input terminal to the back electrode so that a potential difference between the back surface and the second ohmic electrode is reduced. When the first switching element is in the on-state, a positive voltage bias is applied to the back electrode. | 04-26-2012 |
20120217542 | BIDIRECTIONAL SWITCH - A bidirectional switch includes a semiconductor element and a substrate potential stabilizer. The semiconductor element includes a first ohmic electrode and a second ohmic electrode, and a first gate electrode and a second gate electrode, which are sequentially formed on the first ohmic electrode between the first ohmic electrode and the second ohmic electrode. The substrate potential stabilizer sets a potential of the substrate lower than higher one of a potential of the first ohmic electrode or a potential of the second ohmic electrode. | 08-30-2012 |
20130009676 | BIDIRECTIONAL SWITCHING DEVICE AND BIDIRECTIONAL SWITCHING CIRCUIT USING THE SAME - A bidirectional switching device includes a semiconductor multilayer structure made of a nitride semiconductor, a first ohmic electrode and a second ohmic electrode which are formed on the semiconductor multilayer structure, and a first gate electrode and a second gate electrode. The first gate electrode is covered with a first shield electrode having a potential substantially equal to that of the first ohmic electrode. The second gate electrode is covered with the second shield electrode having a potential substantially equal to that of the second ohmic electrode. An end of the first shield electrode is positioned between the first gate electrode and the second gate electrode, and an end of the second shield electrode is positioned between the second gate electrode and the first gate electrode. | 01-10-2013 |
20130087858 | SEMICONDUCTOR DEVICE - A bidirectional switch includes a plurality of unit cells | 04-11-2013 |
20140177308 | ELECTRICAL POWER CONVERSION DEVICE - A normally-off bidirectional switch having two gates is connected to a transformer. The transformer has a first winding and a second winding. A first gate bias power supply configured to use power generated at the first winding to supply power for driving one of the gates of the bidirectional switch and a second gate bias power supply configured to use power generated at the second winding to supply power for driving the other gate of the bidirectional switch are provided. | 06-26-2014 |
20150014746 | SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE - A switching device includes a power semiconductor chip, and a drive circuit which drives the power semiconductor chip. In the power semiconductor chip, a path through which a main current flows is connected to a first source terminal, and a ground terminal of the drive circuit is connected to a second source terminal of the power semiconductor chip. As a result, a gate drive path is separated from the path through which the main current flows, and therefore, the influence of induced electromotive force which is generated due to source parasitic inductance, on a gate-source voltage, is reduced. | 01-15-2015 |