Patent application number | Description | Published |
20100240921 | Catalyst for Oxidation or Ammoxidation, and Process for Producing the Same - It is an object to provide a novel oxide catalyst for producing an unsaturated acid or unsaturated nitrile by which reaction results are good and a high yield can be stably maintained for a prolonged period of time, a process for producing the oxide catalyst, and a process for producing an unsaturated acid or unsaturated nitrile using the oxide catalyst. According to the present invention, there is provided an oxide catalyst represented by following compositional formula (1): | 09-23-2010 |
20100286432 | PROCESS FOR PRODUCING OXIDE CATALYSTS - An object of the present invention is to provide a process for producing an oxide catalyst used in a vapor-phase catalytic oxidation or vapor-phase catalytic ammoxidation reaction of propane or isobutene, which enables a catalyst demonstrating favorable yield to be stably produced. According to the present invention, there is provided a process for producing an oxide catalyst used in a vapor-phase catalytic oxidation or vapor-phase catalytic ammoxidation reaction of propane or isobutane, comprising the steps of: (i) preparing a catalyst raw material mixture containing Mo, V and Nb and satisfying the relationships of 0.1≦a≦1 and 0.01≦b≦1 when atomic ratios of V and Nb to one atom of Mo are defined as a and b, respectively; (ii) drying the catalyst raw material mixture; and (iii) calcining a particle, in which a content of the particle having a particle diameter of 25 μm or less is 20% by mass or less and a mean particle diameter is from 35 to 70 μm, in an inert gas atmosphere. | 11-11-2010 |
20130225862 | OXIDE CATALYST, PROCESS FOR PRODUCING OXIDE CATALYST, PROCESS FOR PRODUCING UNSATURATED ACID, AND PROCESS FOR PRODUCING UNSATURATED NITRILE - Disclosed is a process for producing an oxide catalyst for use in the gas-phase catalytic oxidation reaction or the like of propane or the like, the process comprising the steps of: (I) obtaining a preparation containing compounds of Mo, V, Nb, and Sb or Te at the predetermined atomic ratios; (II) drying the preparation to obtain a dry powder; and (III) calcining the dry powder, wherein the step (III) comprises the step of calcining the dry powder in the presence of a compound containing W in the form of a solid to obtain a pre-stage calcined powder or a mainly calcined powder, or the step of calcining the dry powder and calcining the obtained pre-stage calcined powder in the presence of the solid to obtain a mainly calcined powder, the solid satisfies the predetermined conditions, and the oxide catalyst comprises a catalytic component having the predetermined composition. | 08-29-2013 |
20140024851 | CALCINATION APPARATUS, PROCESS FOR PRODUCING OXIDE CATALYST, AND PROCESS FOR PRODUCING UNSATURATED ACID OR UNSATURATED NITRILE - Disclosed is a calcination apparatus, including: a calcination tube having open ends at both terminals; a pair of hoods, each hood covering each open end of the calcination tube; and a pair of rings, each ring sealing a gap between the calcination tube and the hood, wherein the rings are directly or indirectly fixed on an outer surface of the calcination tube; a groove is provided along a circumferential direction of the ring at a contact surface side between the ring and the hood; a sealed chamber surrounded by the hood and the groove is formed; and both the calcination tube and the rings rotate in a circumferential direction of the calcination tube while keeping the hood in contact with both sides of the groove. | 01-23-2014 |
20160023994 | CALCINATION APPARATUS, PROCESS FOR PRODUCING OXIDE CATALYST, AND PROCESS FOR PRODUCING UNSATURATED ACID OR UNSATURATED NITRILE - Disclosed is a calcination apparatus, including: a calcination tube having open ends at both terminals; a pair of hoods, each hood covering each open end of the calcination tube; and a pair of rings, each ring sealing a gap between the calcination tube and the hood, wherein the rings are directly or indirectly fixed on an outer surface of the calcination tube; a groove is provided along a circumferential direction of the ring at a contact surface side between the ring and the hood; a sealed chamber surrounded by the hood and the groove is formed; and both the calcination tube and the rings rotate in a circumferential direction of the calcination tube while keeping the hood in contact with both sides of the groove. | 01-28-2016 |
Patent application number | Description | Published |
20080224676 | Voltage Clamp Circuit, a Switching Power Supply Device, a Semiconductor Integrated Circuit Device, and a Voltage Level Conversion Circuit - The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential. In such a switching power source device, the voltage clamping circuit is used in a feedback route for setting a dead time. | 09-18-2008 |
20090295351 | Voltage Clamp Circuit, A Switching Power Supply Device, A Semiconductor Integrated Circuit Device, and A Voltage Level Conversion Circuit - The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential. In such a switching power source device, the voltage clamping circuit is used in a feedback route for setting a dead time. | 12-03-2009 |
20110127975 | SWITCHING POWER SUPPLY DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT - The present invention provides a switching power source and a semiconductor integrated circuit which realize an acquisition a sufficient driving voltage of a high-potential side switching element M1 even when a power source voltage VDD is low. In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal, the boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity. | 06-02-2011 |
20110127982 | VOLTAGE CLAMP CIRCUIT, A SWITCHING POWER SUPPLY DEVICE, A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND A VOLTAGE LEVEL CONVERSION CIRCUIT - The present invention provides a voltage clamping circuit which is operated in a stable manner with the simple constitution and a switching power source device which enables a high-speed operation. In a switching power source device, one of source/drain routes is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current which is made to flow in an inductor such that the output voltage assumes a predetermined voltage and a second switching element which clamps an reverse electromotive voltage generated in the inductor when the first switching element is turned off to a predetermined potential. In such a switching power source device, the voltage clamping circuit is used in a feedback route for setting a dead time. | 06-02-2011 |
20120086062 | SWITCHING POWER SUPPLY DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT - In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other such that when the MOSFET is made to assume an OFF state, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity. | 04-12-2012 |
20120286365 | SWITCHING POWER SUPPLY DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT - In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity. | 11-15-2012 |
20130002313 | SWITCHING POWER SUPPLY DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT - In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity. | 01-03-2013 |
20130049719 | VOLTAGE CLAMP CIRCUIT, A SWITCHING POWER SUPPLY DEVICE, A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND A VOLTAGE LEVEL CONVERSION CIRCUIT - A voltage clamping circuit which operates in a stable manner and a switching power source device which enables high-speed operation. In the switching power source device, one source/drain route is connected to an input terminal to which an input voltage is supplied, a predetermined voltage to be restricted is supplied to a gate, and using a MOSFET which provides a current source between another source/drain route and a ground potential of the circuit, a clamp output voltage which corresponds to the input voltage is obtained from another source/drain route. The switching power source device further includes a first switching element which controls a current in an inductor and a second switching element which clamps a reverse electromotive voltage generated in the inductor. The voltage clamping circuit is used in a feedback route for setting a dead time. | 02-28-2013 |
20140152282 | SWITCHING POWER SUPPLY DEVICE AND A SEMICONDUCTOR INTEGRATED CIRCUIT - In a switching power source which controls a current which flows in an inductor through a switching element which performs a switching operation in response to a PWM signal, and forms an output voltage by a capacitor which is provided in series in the inductor, a booster circuit which is constituted of a bootstrap capacity and a MOSFET is provided between an output node of the switching element and a predetermined voltage terminal. The boosted voltage is used as an operational voltage of a driving circuit of the switching element, another source/drain region and a substrate gate are connected with each other, and a junction diode between one source/drain region and the substrate gate is inversely directed with respect to the boosted voltage which is formed by the bootstrap capacity. | 06-05-2014 |