Patent application number | Description | Published |
20110140219 | PHOTOELECTRIC CONVERSION DEVICE - A device includes a plurality of photoelectric conversion regions, an interlayer insulating film arranged on the plurality of photoelectric conversion regions, a protective insulating film that is arranged in contact with the interlayer insulating film and has a refractive index different from that of the interlayer insulating film, recesses arranged in a light-receiving surface of each of the plurality of photoelectric conversion regions, and embedded regions embedded in the recesses. When a wavelength of incident light to each of the plurality of photoelectric conversion regions is denoted by λ and a refractive index of the embedded regions is denoted by n, a depth d of the recesses is represented by an expression d≧λ/4n. | 06-16-2011 |
20110199521 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor comprises a pixel unit having a substrate including therein a photoelectric conversion section and an optical waveguide arranged on a light incident side of the substrate so as to guide an incident light converted into a guided mode of the optical waveguide and being propagated through the optical waveguide to the photoelectric conversion section. The optical waveguide has a mode conversion section for changing a propagation state of the incident light such that the incident light being propagated through the optical waveguide has an electric field amplitude distributed with the same sign at a light incident surface of the substrate. | 08-18-2011 |
20120033116 | SOLID-STATE IMAGE SENSOR AND CAMERA - A solid-state image sensor includes first-color pixels and second-color pixels, each of the first-color pixels including a first antireflection film and a first color filter, and each of the second-color pixels including a second antireflection film and a second color filter, wherein the solid-state image sensor satisfies | 02-09-2012 |
20120170889 | Mode Converter - Provided is a mode converter capable of efficiently coupling or emitting light having a single-peaked spot, and has high flexibility of the shape to be easily manufactured. The mode converter is formed of multiple single-mode waveguides optically coupling areas | 07-05-2012 |
20120199725 | PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A light condensing member focuses light, which is incident upon a first area of the light condensing member corresponding to an opening portion of an insulation film, in an upper portion region of a light path member arranged within the opening portion, the insulation film having an upper face extending from the opening portion, and the light path member having a lower face in a region corresponding to a light receiving face of an photoelectric conversion portion. | 08-09-2012 |
20120199893 | SOLID-STATE IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM INCLUDING SOLID-STATE IMAGE PICKUP APPARATUS, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP APPARATUS - A method for manufacturing a solid-state image pickup device is provided. The image pickup apparatus includes a photoelectric conversion portion disposed on the semiconductor substrate, a first insulating film over the photoelectric conversion portion, functioning as an antireflection film, a second insulating film on the first insulating film, disposed corresponding to the photoelectric conversion portion, and a waveguide having a clad and a core whose bottom is disposed on the second insulating film. The method includes forming an opening by anisotropically etching part of a member disposed over the photoelectric conversion portion, thereby forming the clad, and forming the core in the opening. In the method, the etching is performed under conditions where the etching rate of the second insulating film is lower than the etching rate of the member. | 08-09-2012 |
20120200727 | PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE SENSING SYSTEM - A member for light path to a photoelectric conversion portion includes a middle portion, and a peripheral portion having a refractive index different from the refractive index of the middle portion, and within some plane in parallel with the light receiving surface of a photoelectric conversion portion, and within other plane closer to the light receiving surface than the some plane in parallel with the light receiving surface, the peripheral portion is continuous with the middle portion and surrounds the middle portion, and also the refractive index of the peripheral portion is higher than the refractive index of an insulator film, and the thickness of the peripheral portion within the other plane is smaller than the thickness of the peripheral portion within the some plane. | 08-09-2012 |
20120200728 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE SENSING SYSTEM - A photoelectric conversion apparatus at least includes an insulating film, a plurality of high-refractive-index members provided so as to correspond respectively to individual photoelectric conversion portions, being surrounded by the insulating film and having a refractive index higher than the refractive index of the insulating film, and a high-refractive-index film provided on the insulating film so as to connect the plurality of high-refractive-index members to one another and having a refractive index higher than the refractive index of the insulating film, and lens portions lying next to each other from among a plurality of lens portions border each other. | 08-09-2012 |
20120200751 | PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens. | 08-09-2012 |
20130100322 | SOLID-STATE IMAGE SENSOR AND CAMERA - A solid-state image sensor has a plurality of pixel units, each pixel unit including a plurality of pixels, and a charge-voltage converter shared by the plurality of pixels. The sensor includes a structural portion including a plurality of wiring layers, an interlayer insulating film, and light waveguides configured by embedding, in portions of the interlayer insulating film located above the photoelectric converters, a material having a refractive index higher than that of the interlayer insulating film. A dummy pattern is formed in the structural portion to reduce a difference between a sensitivity of a first pixel and that of a second pixel, which is produced by a difference between a structure in a periphery of the light waveguide arranged above the photoelectric converter of the first pixel and that of the second pixel. | 04-25-2013 |
20140035086 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor includes a semiconductor layer having photoelectric conversion portions, and a wiring structure arranged on a side of a first face of the semiconductor layer, and receives light from a side of a second face of the semiconductor layer. The wiring structure includes a reflection portion having a reflection surface reflecting light transmitted through the semiconductor layer from the second face toward the first face, toward the semiconductor layer, and an insulation film located between the reflection surface and the first face. The sensor includes a first dielectric film arranged to contact the first face, and a second dielectric film arranged between the insulation film and the first dielectric film and having a refractive index different from refractive indices of the first dielectric film and the insulation film. | 02-06-2014 |
20140117481 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus comprising a semiconductor layer, a first region on a side of a first surface of the semiconductor layer, and a second region on a side of a second surface of the semiconductor layer, wherein photoelectric conversion portions are arrayed in the semiconductor layer, lens portions are arrayed in the first region, and an interconnection pattern and reflection portions are arrayed in the second region, in one of pixels of the apparatus, the apparatus has a structure in which sectional areas, on the second surface and on a reflection surface of the reflection portion, of the light beam traveling from the photoelectric conversion portion, are larger than a sectional area, in a portion between the photoelectric conversion portion and the reflection portion, of the light beam traveling from the photoelectric conversion portion. | 05-01-2014 |
20140145287 | SOLID-STATE IMAGE SENSOR - An image sensor includes a first pixel having a first color filter, a first reflection region which reflects light from the first color filter, and a first photoelectric conversion portion arranged in a semiconductor layer and located between the first color filter and the first reflection region, and a second pixel including a second color filter, a second reflection region which reflects light from the second color filter, and a second photoelectric conversion portion arranged in the semiconductor layer and located between the second color filter and the second reflection region. Wavelength corresponding to a maximum transmittance of the first color filter is shorter than wavelength corresponding to a maximum transmittance of the second color filter. An area of the first reflection region is smaller than area of the second reflection region. | 05-29-2014 |
20140246569 | PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE SENSING SYSTEM - A member for light path to a photoelectric conversion portion includes a middle portion, and a peripheral portion having a refractive index different from the refractive index of the middle portion, and within some plane in parallel with the light receiving surface of a photoelectric conversion portion, and within other plane closer to the light receiving surface than the some plane in parallel with the light receiving surface, the peripheral portion is continuous with the middle portion and surrounds the middle portion, and also the refractive index of the peripheral portion is higher than the refractive index of an insulator film, and the thickness of the peripheral portion within the other plane is smaller than the thickness of the peripheral portion within the some plane. | 09-04-2014 |
20140306309 | PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a semiconductor substrate having a photoelectric conversion portion. An insulator is provided on the semiconductor substrate. The insulator has a hole corresponding to the photoelectric conversion portion. A waveguide member is provided in the hole. An in-layer lens is provided on a side of the waveguide member farther from the semiconductor substrate. A first intermediate member is provided between the waveguide member and the in-layer lens. The first intermediate member has a lower refractive index than the in-layer lens. | 10-16-2014 |