Patent application number | Description | Published |
20080200002 | Plasma Sputtering Film Deposition Method and Equipment - A method for generating metal ions by sputtering a metal target ( | 08-21-2008 |
20090321936 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE, COMPUTER PROGRAM AND STORAGE MEDIUM - Provided is a semiconductor device which has excellent adhesiveness to a copper film and a base film thereof and has a small resistance between wirings. The semiconductor device includes a porous insulating layer (SIOC film | 12-31-2009 |
20100015799 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, COMPUTER PROGRAM AND STORAGE MEDIUM - A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film) | 01-21-2010 |
20110018651 | POWER COMBINER AND MICROWAVE INTRODUCTION MECHANISM - A power combiner | 01-27-2011 |
20110061814 | MICROWAVE INTRODUCING MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA PROCESSING APPARATUS - A microwave introducing mechanism | 03-17-2011 |
20130168389 | MICROWAVE HEATING APPARATUS AND PROCESSING METHOD - Four microwave introduction ports are arranged to deviate from directly above a wafer in such a way that the long sides thereof are in parallel to at least one of the four straight sides. The top surface of a rectifying plate which surrounds the wafer is inclined so as to be widened from the side of the wafer (inner side) toward the side of a sidewall portion (outer side) to form an inclined portion. The inclined portion is disposed to face the four microwave introduction ports in a vertical direction. | 07-04-2013 |
20130168390 | MICROWAVE HEATING APPARATUS AND PROCESSING METHOD - In the microwave heating apparatus, four microwave introduction ports are arranged at positions spaced apart from each other at an angle of about 90° in a ceiling portion of a processing chamber in such a way that the long sides and the short sides thereof are in parallel to inner surfaces of four sidewalls. The microwave introduction port are disposed in such a way that each of the microwave introduction ports are not overlapped with another microwave introduction port whose long sides are in parallel to the long sides of the corresponding microwave introduction port when the corresponding microwave introduction port is moved in translation in a direction perpendicular to the long sides thereof. | 07-04-2013 |
20130180661 | MICROWAVE INTRODUCING MECHANISM, MICROWAVE PLASMA SOURCE AND MICROWAVE PLASMA PROCESSING APPARATUS - The microwave introducing mechanism includes an antenna unit having a planar antenna radiating a microwave into a chamber; a tuner for performing impedance matching; and a heat dissipation device for dissipating a heat from the antenna unit. The tuner has a tuner main body including a tubular outer conductor and a tubular inner conductor to serve as a part of a microwave transmission line; slugs provided between the outer conductor and the inner conductor to be movable along a longitudinal direction of the inner conductor; and a driving device for moving the slugs. The heat dissipation device has a heat pipe configured to transfer the heat of the antenna unit from its heat input end to its heat dissipation end. | 07-18-2013 |
20130192760 | MICROWAVE EMITTING DEVICE AND SURFACE WAVE PLASMA PROCESSING APPARATUS - A microwave emitting device emits a microwave generated by a microwave generation unit into a chamber in a plasma processing apparatus for performing plasma processing by generating a surface wave plasma in the chamber. The device includes: a transmission line having a tubular outer conductor and an inner conductor disposed in the outer conductor to transmit the microwave; an antenna to emit the microwave transmitted through the microwave transmission line into the chamber through slots; a dielectric member to transmit the microwave emitted from the antenna to generate a surface wave; and a DC voltage application member to apply a positive DC voltage to a plasma generation region where a surface wave plasma is generated by the surface wave. | 08-01-2013 |
20140339981 | ANTENNA FOR PLASMA GENERATION, PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - An antenna for plasma generation radiates a microwave transmitted through a coaxial waveguide into a processing chamber and propagates the microwave on a metal surface of the processing chamber to convert gas into surface wave plasma. The antenna includes a gas flow path for passing the gas through the antenna, a plurality of gas holes that communicate with the gas flow path and introduce the gas into the processing chamber, and a plurality of slots that are separated from the gas flow path and penetrate through the gas flow path. The slots pass the microwave transmitted through the coaxial waveguide and a slow-wave plate to the processing chamber. A first space between portions of adjacent slots penetrating through the gas flow path is arranged to be wider than a second space between portions of the adjacent slots opening out to a plasma generation space of the processing chamber. | 11-20-2014 |
20140361684 | MICROWAVE EMISSION MECHANISM, MICROWAVE PLASMA SOURCE AND SURFACE WAVE PLASMA PROCESSING APPARATUS - A microwave emission mechanism includes: a transmission path through which a microwave is transmitted; and an antenna section that emits into a chamber the microwave transmitted through the transmission path. The antenna section includes an antenna having a slot through which the microwave is emitted, a dielectric member through which the microwave emitted from the antenna is transmitted and a closed circuit in which a surface current and a displacement current flow. A surface wave is formed in a surface of the dielectric member. The closed circuit has at least: an inner wall of the slot; and the surface and an inner portion of the dielectric member. When a wavelength of the microwave is λ | 12-11-2014 |
20140367377 | MICROWAVE HEATING APPARATUS AND HEATING METHOD - A microwave heating apparatus includes a phase control unit configured to change a phase of a standing wave of microwave introduced into the process chamber by the microwave introduction unit. The phase control unit includes a recessed portion with respect to an inner surface of the bottom wall. The phase control unit is formed of a bottom portion and a fixing plate installed at a lower surface of the bottom portion from the outer side of the process chamber. The phase of the standing wave in the process chamber is changed by the incidence and reflection of the microwave in the recessed portion of the phase control unit surrounded by metallic wall. | 12-18-2014 |