Patent application number | Description | Published |
20090014800 | SILICON CONTROLLED RECTIFIER DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION - An SCR device includes a substrate, a plurality of isolation structures defining a first region and a second region in the substrate, an n well disposed in the substrate, an n type first doped region disposed in the first region in the substrate, a p type second doped region disposed in the second region in the substrate, and a p type third doped region (PESD implant region) disposed underneath the first doped region in the first region in the substrate. The well is disposed underneath the first region and the second region, and the third doped region isolates the first doped region from the well. | 01-15-2009 |
20090278168 | STRUCTURE OF SILICON CONTROLLED RECTIFIER - A silicon controlled rectifier structure is provided in a substrate having a first conductive type. A well region formed within the substrate has a second conductive type. A first dopant region formed within the substrate and the well region has the first conductive type. A second dopant region formed within the substrate and a portion of the well region has the second conductive type. A third dopant region formed under the second dopant region has the first conductive type, in which the second and the third regions form a vertical Zener diode. A fourth dopant region formed within the substrate and separated from the second dopant region by a separation structure has the second conductive type. A fifth dopant region is formed within the substrate in a manner that the fourth dopant region is between the isolation structure and the fifth dopant region, and has the first conductive type. | 11-12-2009 |
20100019318 | DEVICE FOR ESD PROTECTION CIRCUIT - A LDNMOS device for an ESD protection circuit including a P-type substrate and an N-type deep well region is provided. The P-type substrate includes a first area and a second area. The N-type deep well region is in the first and second areas of the P-type substrate. The LDNMOS device further includes a gate electrode disposed on the P-type substrate between the first and second areas, a P-type implanted region disposed in the first area of the P-type substrate, an N-type grade region disposed in the N-type deep well region of the first area, an N-type first doped region disposed in the N-type grade region, a P-type body region disposed in the N-type deep well region of the second area, an N-type second doped region disposed in the P-type body region, and a P-type doped region disposed in the P-type body region and adjacent to the N-type second doped region. | 01-28-2010 |
20100032758 | LDMOS DEVICE FOR ESD PROTECTION CIRCUIT - A LDMOS device for an ESD protection circuit is provided. The LDMOS device includes a substrate of a first conductivity type, a deep well region of a second conductivity type, a body region of the first conductivity type, first and second doped regions of the second conductivity type, and a gate electrode. The deep well region is disposed in the substrate. The body region and the first doped region are respectively disposed in the deep well region. The second doped region is disposed in the body region. The gate electrode is disposed on the deep well region between the first and second doped regions. It is noted that the body region does not include a doped region of the first conductivity type having a different doped concentration from the body region. | 02-11-2010 |
20100102379 | LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE - A LDMOS device includes a substrate of a first conductivity type, a deep well region of a second conductivity type, two body regions of the first conductivity type, a body connection region of the first conductivity type, two source regions of the second conductivity type, a drain region of the second conductivity type, a channel region, and a gate electrode. The body regions are disposed in the deep well region configured in the substrate. The body connection region is disposed in the deep well region to connect the body regions. Each of the source regions is disposed in the body region. The drain region is disposed in the deep well between the source regions. The channel region is disposed in a portion of the body region. The gate electrode is disposed on the deep well region between the source regions and the drain region and covers the channel region. | 04-29-2010 |
20100148264 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE AND METHOD OF FABRICATING THE SAME - An ESD protection device including a substrate, a gate structure, a source region, a drain region and a first implanted region is provided. The gate structure includes a gate dielectric layer and a gate sequentially disposed on the substrate. The source region and the drain region are disposed in the substrate beside the gate structure. The first implanted region has the same conductivity type as the drain region. The first implanted region is disposed below the drain region, and the border thereof does not exceed the border of the drain region. | 06-17-2010 |
20110042716 | ESD protection device structure - An ESD protection device structure includes a well having a first conductive type, a first doped region having a second conductive type disposed in the well, a second doped region having the first conductive type, and a third doped region having the second conductive type disposed in the well. The second doped region is disposed within the first doped region so as to form a vertical BJT, and the first doped region, the well and the third doped region forms a lateral BJT, so that pulse voltage that the ESD protection structure can tolerate can be raised. | 02-24-2011 |
20120170160 | ESD protection circuit and ESD protection device thereof - The ESD protection circuit is electrically connected between a first power rail and a second power rail, and includes an ESD protection device, a switching device electrically connected between the ESD protection device and a first power rail, and a low-pass filter electrically connected between the first power rail and the first switching device. The ESD protection device includes a BJT and a first resistor electrically connected between a base of the BJT and a first power rail. When no ESD event occurs, a potential of the base is larger than or equal to a potential of an emitter of the BJT. When the ESD event occurs, the potential of the base is smaller than the potential of the emitter. | 07-05-2012 |
20130027821 | ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT - An electrostatic discharge protection circuit is located between a first voltage terminal and a second voltage terminal. The electrostatic discharge protection circuit includes a first semiconductor switch and a second semiconductor switch. The first semiconductor switch is electrically connected to the first voltage terminal. If a voltage at the first voltage terminal complies with a starting condition, the first semiconductor switch is turned on, so that an electrostatic discharge current flows through the first voltage terminal and the first semiconductor switch. The second semiconductor switch is electrically connected between the first semiconductor switch and the second voltage terminal, wherein the electrostatic discharge current from the first semiconductor switch passes to the second voltage terminal through the second semiconductor switch. | 01-31-2013 |
20130088800 | ELECTROSTATIC DISCHARGE (ESD) PROTECTION DEVICE - An exemplary ESD protection device is adapted for a high-voltage tolerant I/O circuit and includes a stacked transistor and a gate-grounded transistor e.g., a non-lightly doped drain type gate-grounded transistor. The stacked transistor and the gate-grounded transistor are electrically coupled in parallel between an I/O pad and a grounding voltage of the high-voltage tolerant I/O circuit. | 04-11-2013 |
20130093009 | METHOD OF MANUFACTURING NMOS TRANSISTOR WITH LOW TRIGGER VOLTAGE - A method for forming an NMOS transistor includes forming a P-substrate; forming an N-well on the P-substrate; forming an N-drift region on the N-well; forming an n+ drain on the N-drift region; forming a plurality of first contacts on the n+ drain along a longitudinal direction; forming a P-body on the N-well; forming a source on the P-body, the source including a plurality of n+ doped regions and at least one p+ doped region arranged along the longitudinal direction; forming a plurality of second contacts on the plurality of n+ doped regions and the at least one p+ doped region; forming a polygate on the P-body; and forming a gate oxide between the polygate and the source. | 04-18-2013 |
20130107402 | ELECTROSTATIC PROTECTION CIRCUIT CAPABLE OF PREVENTING LATCH-UP EFFECT | 05-02-2013 |
20130113045 | ELECTROSTATIC DISCHARGE (ESD) DEVICE AND SEMICONDUCTOR STRUCTURE - An electrostatic discharge (ESD) device is described, including a gate line, a source region at a first side of the gate line, a comb-shaped drain region disposed at a second side of the gate line and having comb-teeth parts, a salicide layer on the source region and the drain region, and contact plugs on the salicide layer on the source region and the drain region. Each comb-teeth part has thereon, at a tip portion thereof, at least one of the contact plugs. | 05-09-2013 |
20130181211 | METAL OXIDE SEMICONDUCTOR DEVICE - Provided is a metal oxide semiconductor device, including a substrate, a gate, a first-type first heavily doped region, a first-type drift region, a second-type first heavily doped region, a contact, a first electrode, and a second electrode. The gate is disposed on the substrate. The first-type first heavily doped region is disposed in the substrate at a side of the gate. The first-type drift region is disposed in the substrate at another side of the gate. The second-type first heavily doped region is disposed in the first-type drift region. The contact is electrically connected to the second-type first heavily doped region. The contact is the closest contact to the gate on the first-type drift region. The first electrode is electrically connected to the contact, and the second electrode is electrically connected to the first-type first heavily doped region and the gate. | 07-18-2013 |
20130207184 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a gate structure, a source structure and a drain structure. The substrate includes a deep well region, and the gate structure is disposed on the deep well region. The source structure is formed within the deep well and located at a first side of the gate structure. The drain structure is formed within the deep well region and located at a second side of the gate structure. The drain structure includes a first doped region of a first conductivity type, a first electrode and a second doped region of a second conductivity type. The first doped region is located in the deep well region; the first electrode is electrically connected to the first doped region. The second doped region is disposed within the first doped region and between the first electrode and the gate structure. | 08-15-2013 |
20130208379 | ELECTROSTATIC DISCHARGE PROTECTION APPARATUS - A semiconductor ESD protection apparatus comprises a substrate; a first doped well disposed in the substrate and having a first conductivity; a first doped area having the first conductivity disposed in the first doped well; a second doped area having a second conductivity disposed in the first doped well; and an epitaxial layer disposed in the substrate, wherein the epitaxial layer has a third doped area with the first conductivity and a fourth doped area with the second conductivity separated from each other. Whereby a first bipolar junction transistor (BJT) equivalent circuit is formed between the first doped area, the first doped well and the third doped area; a second BJT equivalent circuit is formed between the second doped area, the first doped well and the fourth doped area; and the first BJT equivalent circuit and the second BJT equivalent circuit have different majority carriers. | 08-15-2013 |
20130250462 | ESD protection circuit and ESD protection device thereof - The ESD protection circuit is electrically connected between a first power rail and a second power rail, and includes an ESD protection device, a switching device electrically connected between the ESD protection device and a first power rail, and a low-pass filter electrically connected between the first power rail and the first switching device. The ESD protection device includes a BJT and a first resistor electrically connected between a base of the BJT and a first power rail. When no ESD event occurs, a potential of the base is larger than or equal to a potential of an emitter of the BJT. When the ESD event occurs, the potential of the base is smaller than the potential of the emitter. | 09-26-2013 |
20140027856 | ELECTROSTATIC DISCHARGE PROTECTION DEVICE - An electrostatic discharge (ESD) includes a semiconductor substrate having the first conductive type, a well having the first conductive type, a buried layer having the second conductive type and a well having the second conductive type. The buried layer having a second conductive type is disposed in the semiconductor substrate under the well having the first conductive type. The well having the second conductive type disposed to divide the well having the first conductive type into a first well and a second well. The well having the second conductive type contacts the buried layer, and the well having the second conductive type and the buried layer are jointly used to isolate the first well from the second well. | 01-30-2014 |
20140183596 | ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE - An electrostatic discharge protection structure includes a semiconductor substrate, a first well region, a gate structure, a second well region, a second well region, a second conductive region, and a deep well region. The first well region contains first type conducting carriers. The second well region is disposed within the first well region, and contains second type conducting carriers. The first conductive region is disposed on the surface of the first well region, and contains the second type conducting carriers. The deep well region is disposed under the second well region and the first conductive region, and contacted with the second well region. The deep well region contains the second type conducting carriers. | 07-03-2014 |
20140183708 | ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE AND FABRICATING METHOD THEREOF - A method of fabricating an electrostatic discharge protection structure includes the following steps. Firstly, a semiconductor substrate is provided. Plural isolation structures, a well region, a first conductive region and a second conductive region are formed in the semiconductor substrate. The well region contains first type conducting carriers. The first conductive region and the second conductive region contain second type conducting carriers. Then, a mask layer is formed on the surface of the semiconductor substrate, wherein a part of the first conductive region is exposed. Then, a first implantation process is performed to implant the second type conducting carriers into the well region by using the mask layer as an implantation mask, so that a portion of the first type conducting carriers of the well region is electrically neutralized and a first doped region is formed under the exposed part of the first conductive region. | 07-03-2014 |
20140203367 | Transistor Structure for Electrostatic Discharge Protection - The present invention discloses a transistor structure for electrostatic discharge protection. The structure includes a substrate, a doped well, a first doped region, a second doped region and a third doped region. The doped well is disposed in the substrate and has a first conductive type. The first doped region is disposed in the substrate, encompassed by the doped well and has the first conductive type. The second doped region is disposed in the substrate, encompassed by the doped well and has a second conductive type. The third doped region is disposed in the substrate, encompassed by the doped well and has the second conductive type. A gap is disposed between the first doped region and the second doped region. | 07-24-2014 |
20140284720 | SEMICONDUCTOR DEVICE FOR ELECTROSTATIC DISCHARGE PROTECTION - A semiconductor device includes a substrate, a gate positioned on the substrate, a drain region and a source region formed at respective two sides of the gate in the substrate, at least a first doped region formed in the drain region, and at least a first well having the first doped region formed therein. The source region and the drain region include a first conductivity type, the first doped region and the first well include a second conductivity type, and the first conductivity type and the second conductivity type are complementary to each other. | 09-25-2014 |
20140300391 | OUTPUT BUFFER - An output buffer includes an input/output end, a voltage source, a first transistor and a second transistor. The first transistor includes a first end coupled to the input/output end, a second end coupled to the voltage source, and a control end coupled to the voltage source. The second transistor includes a first end coupled to the input/output end, a second end coupled to the voltage source, and a control end coupled to the voltage source. The control end of the first transistor and the control end of the second transistor are substantially perpendicular to each other, and the punch through voltage of the first transistor is higher than the punch through voltage of the second transistor. | 10-09-2014 |
20140319613 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a gate positioned on the substrate, a drain and a source formed in the substrate at respective two sides of the gate, and a doped region formed in the source. The drain and the source comprise a first conductivity type and the doped region comprises a second conductivity type. The first conductivity type and the second conductivity type are complementary to each other. | 10-30-2014 |
20150014809 | FIN DIODE STRUCTURE - A fin diode structure and method of manufacturing the same is provided in present invention, which the structure includes a substrate, a doped well formed in the substrate, a plurality of fins of first conductivity type and a plurality of fins of second conductivity type protruding from the doped well, and a doped region of first conductivity type formed globally in the substrate between the fins of first conductivity type, the fins of second conductivity type, the shallow trench isolation and the doped well and connecting with the fins of first doped type and the fins of second doped type. | 01-15-2015 |
20150054132 | LATERAL BIPOLAR JUNCTION TRANSISTOR AND FABRICATION METHOD THEREOF - Provided is a lateral BJT including a substrate, a well region, an area, at least one lightly doped region, a first doped region, and a second doped region. The substrate is of a first conductivity type. The well region is of a second conductivity type and is in the substrate. The area is in the well region. The at least one lightly doped region is in the well region below the area. The first doped region and the second doped region are of the first conductivity type and are in the well region on both sides of the area. The first doped region is connected to a cathode. The second doped region is connected to an anode, wherein the doping concentration of the at least one lightly doped region is lower than that of each of the first doped region, the second doped region, and the well region. | 02-26-2015 |
Patent application number | Description | Published |
20100027722 | WIRED SIGNAL RECEIVING APPARATUS - A wired signal receiving apparatus including a signal receiver, a signal peak detector, and a signal comparator is disclosed. The signal receiver includes an operation current detecting circuit for detecting an operation current. The signal receiver further receives a transmission signal. The signal peak detector receives the operation current, detects a peak thereof, and generates a peak current. The signal comparator compares a reference signal and the peak current to generate an output current for regulating the operation current. | 02-04-2010 |
20100164998 | DRIVING METHOD AND DISPLAY DEVICE CAPABLE OF ENHANCING IMAGE BRIGHTNESS AND REDUCING IMAGE DISTORTION - A driving method for a display device provides a first input pixel data corresponding to a pixel, and generates a second input pixel data by multiplying the first input pixel data by a predetermined rate. Next, an output pixel data corresponding to the second input pixel data is obtained from a predetermined gamma curve. When receiving the first input pixel data, the output pixel data is used for driving a display panel, and the second input pixel data is used for driving a backlight module of the display panel, | 07-01-2010 |
20100177067 | METHOD AND CIRCUIT FOR CONTROLLING TIMINGS OF DISPLAY DEVICES USING A SINGLE DATA ENABLE SIGNAL - In a first display period of a display device, a first count value is recorded at the rising edge of the data enable signal for controlling the length of a horizontal line. Next, a second count value is recorded at the falling edge of the data enable signal for identifying the time when the data enable signal switches from a high level to a low level. When entering a porch period following the first display period, the counter is cleared when the count value reaches the first count value. In a second display period following the porch period, the counter is cleared at the rising edge of the data enable signal, and the first count value is used for controlling the length of the horizontal line. | 07-15-2010 |
20100207963 | GAMMA VOLATGE GENERATING APPARATUS AND GAMMA VOLTAGE GENERATOR THEREOF - A gamma voltage generator including an operation amplifier, a first reference impedance unit, a second reference impedance unit, a first variable impedance unit, a second variable impedance unit, and a select unit is provided. The operation amplifier generates an amplified output voltage. The first reference impedance unit receives a first gamma voltage, and the second reference impedance unit receives a second gamma voltage. The first variable impedance unit provides a first variable impedance, and the second variable impedance unit receives the first gamma voltage and provides a second variable impedance. The select unit selects the amplified output voltage or the first gamma voltage according to a control signal to generate an interpolated gamma output voltage. | 08-19-2010 |
20100295874 | GAMMA VOLTAGE GENERATION DEVICE FOR A FLAT PANEL DISPLAY - A gamma voltage generation device for a flat panel display includes a first voltage dividing circuit coupled between a high voltage and a low voltage, for generating a plurality of primary voltages, a plurality of primary selectors coupled to the first voltage dividing circuit, each of the plurality of primary selectors for selecting a primary voltage from the plurality of primary voltages according to an original digital value, a second voltage dividing circuit coupled to the plurality of primary voltages, for generating a plurality of secondary voltages, and a plurality of secondary selectors coupled to the second voltage dividing circuit, each of the plurality of secondary selectors for selecting a secondary voltage to be a reference grayscale voltage of a gamma curve from a predetermined number of secondary voltages of the plurality of secondary voltages according to a target digital value. | 11-25-2010 |
20110083911 | Capacitive Touch Sensing Apparatus and Detection Method Thereof - A capacitive touch sensing apparatus includes a plurality of sensing capacitor units, a control signal generation unit, a plurality of high impedance controllers, and a detection unit. The plurality of sensing capacitor units are utilized for generating a plurality of touch analog signals. The control signal generation unit is utilized for generating a plurality of control signals. The plurality of high impedance controllers are installed by intersections of a plurality of control signal lines and a plurality of signal transmission lines, where each of the high impedance controllers conducts a corresponding touch analog signal to a corresponding signal transmission line according to a corresponding control signal. The detection unit is utilized for determining whether a touch event occurs according to the conducted touch analog signal | 04-14-2011 |
20110115821 | Control Method, Control Device and Electronic Device - A control method for an electronic device includes detecting a distance between an object and a reference point of the electronic device, and generating a control command for the electronic device according to the distance between the object and the reference point, in order to control the electronic device to perform a corresponding function. | 05-19-2011 |
20110163994 | TOUCH SENSING SYSTEM, CAPACITANCE SENSING APPARATUS AND CAPACITANCE SENSING METHOD THEREOF - A touch sensing system includes a touch input interface and at least one capacitance sensing apparatus. The capacitance sensing apparatus includes a plurality of switch units and a differential sensing circuit. Each of the switch units is coupled to a corresponding sensing capacitor. A sensing input end of the differential sensing circuit receives a capacitance under test provided by at least one of the sensing capacitors. A reference input end of the differential sensing circuit receives a reference capacitance provided by at least one of the sensing capacitors. The differential sensing circuit compares the capacitance under test and the reference capacitance to output a first difference between the capacitance under test and the reference capacitance through an output end of the differential sensing circuit. A capacitance sensing method is also provided. | 07-07-2011 |
20110169801 | DRIVING APPARATUS OF DISPLAY - A driving apparatus of a display is disclosed. The driving apparatus mentioned above includes a digital-to-analog converter circuit and an output buffer circuit. The digital-to-analog converting circuit receives a display data with a digital format for generating a gray-level voltage. The output buffer circuit has an output terminal to output an output signal. The output buffer circuit receives the gray-level voltage, a pre-charge enable signal and the output signal and provides a pre-charge output signal to the output terminal of the output buffering circuit according to the pre-charge enable signal and a comparison result of the gray-level voltage and the output signal. | 07-14-2011 |
20110187390 | TOUCH SENSING SYSTEM, CAPACITANCE SENSING CIRCUIT, AND CAPACITANCE SENSING METHOD - A touch sensing system including a touch input interface and a capacitance sensing circuit is provided. The touch input interface includes a plurality of sensing capacitors for outputting a capacitance under test and a reference capacitance. The capacitance sensing circuit includes a first sensing channel, a second sensing channel, and a difference comparing unit. During a first period of the sensing period, the first sensing channel senses the capacitance under test, and the second sensing channel senses the reference capacitance. During a second period of the sensing period, the first sensing channel senses the reference capacitance, and the second sensing channel senses the capacitance under test. The difference comparing unit outputs a difference according to the capacitance under test and the reference capacitance. Additionally, a capacitance sensing method is also provided. | 08-04-2011 |
20110187663 | OBJECT SENSING APPARATUS, TOUCH SENSING SYSTEM, AND TOUCH SENSING METHOD - An object sensing apparatus including an object sensing unit, a signal selecting unit, at least one signal sensing unit, and a control unit is provided. The object sensing unit outputs a plurality of sensing signals. The signal selecting unit selects at least one of the sensing signals as a signal under test and selects at least one of the unselected sensing signals as a reference signal. The signal sensing unit outputs a difference signal according to the signal under test and the reference signal. The control unit determines an object position relative to the object sensing unit according to the difference signal. Additionally, a touch sensing apparatus and a method thereof are also provided. | 08-04-2011 |
20110193571 | TOUCH SENSING SYSTEM, CAPACITANCE SENSING CIRCUIT AND CAPACITANCE SENSING METHOD THEREOF - A touch sensing system which includes a touch input interface and a capacitance sensing circuit is provided. The touch input interface includes a plurality of sensing capacitors which output at least one waveform under test and at least one reference waveform. The capacitance sensing circuit includes a difference comparing unit. The difference comparing unit receives the waveform under test and the reference waveform and outputs a differential signal according to at least one positive edge difference and at least one negative edge difference between the waveform under test and the reference waveform. Furthermore, a capacitance sensing method is also provided. | 08-11-2011 |
20110199323 | TOUCH SENSING METHOD AND SYSTEM USING THE SAME - A touch sensing system includes a touch interface and a control unit. The touch interface senses at least one area change generated on the touch interface by at least one object. The control unit defines a touch gesture corresponding to the at least one object according to the at least one area change, so as to perform a touch operation according to the touch gesture. On the other hand, a touch sensing method is also provided. For users, the touch sensing method in the invention employs a pseudo three-dimensional touch sensing technology, such that applications of the touch sensing technology become more diverse. | 08-18-2011 |
20110210930 | SENSING AND DRIVING APPARATUS, TOUCH SENSING SYSTEM, AND SENSING AND DRIVING METHOD - A sensing and driving apparatus suitable for a sensing interface is provided. The sensing and driving apparatus includes a driving module and a sensing unit. The driving module outputs a first reference signal and a second reference signal which have different polarities with each other, and respectively transmits the first reference signal and the second reference signal to a first driving line and a second driving line of the sensing interface so as to generate a first sensing signal during a first period. The sensing unit receives the first sensing signal and detects a change of the first signal so as to generate a sensing result. A sensing and driving method, a touch sensing system and a device using the same are also provided herein. | 09-01-2011 |
20110234522 | TOUCH SENSING METHOD AND SYSTEM USING THE SAME - A touch sensing system including a touch interface and a control unit is provided. The touch interface senses at least one edge change of at least one region on the touch interface corresponding to at least one object. The control unit defines a touch gesture corresponding to the object according to the edge change so as to perform a touch operation corresponding to the touch gesture. Additionally, a touch sensing method is also provided. In the touch sensing method, whether the touch gesture is a moving gesture, a rotation gesture, a flip gesture, a zoom-in gesture, or a zoom-out gesture is determined according to any change of a touch region. | 09-29-2011 |
20110234523 | TOUCH SENSING SYSTEM, ELECTRONIC TOUCH APPARATUS, AND TOUCH SENSING METHOD - A touch sensing system including a touch interface, at least one sensing unit, and a switching unit is provided. The sensing unit is coupled to the touch interface. The touch sensing system is switched to a first sensing mode or a second sensing mode by the switching unit according to a control signal. When the touch sensing system is in the first sensing mode, the sensing unit senses a first sensing signal and a second sensing signal of the touch interface. On the other hand, when the touch sensing system is in the second sensing mode, the sensing unit senses the first sensing signal according to a driving signal. An electronic touch apparatus and a touch sensing method are also provided. | 09-29-2011 |
20110260992 | PANEL CONTROL DEVICE AND OPERATION METHOD THEREOF - A panel control device and an operation method thereof are provided. The panel control device includes a touch controller and a display controller. The display controller drives a touch display panel module to display an image. The touch controller senses a touch event of the touch display panel module. Wherein, the sensing operation of the touch controller is enabled/disabled in accordance with the driving operation of the display controller. | 10-27-2011 |
20110292022 | POWER CONVERTING APPARATUS AND POWER CONVERTING METHOD - A power converting apparatus including a power converting unit and a control unit is provided. The power converting unit receives an input voltage and generates an output voltage for a display driving unit according to a control signal. The control unit provides the control signal to the power converting unit, wherein the control unit adjusts the duty cycle or the frequency of the control signal according to an image signal. In addition, a power converting method is also provided. | 12-01-2011 |
20120288046 | Signal Calibration Method and Client Circuit and Transmission System Using the Same - A signal calibration method for synchronizing a clock signal and at least one data signal in a transmission system is disclosed. The signal calibration method comprises detecting at least one transmission time difference between the clock signal and the at least one data signal transmitted in the transmission system, calculating a plurality of delay periods of the clock signal and the at least one data signal according to the at least one transmission time difference, and respectively delaying the clock signal and the at least one data signal for the plurality of delay periods to synchronize the clock signal and the at least one data signal. | 11-15-2012 |
20120313871 | TOUCH PANEL AND DISPLAY APPARATUS - A touch panel and a display apparatus are provided. The touch panel includes a substrate, first sensing lines, second sensing lines, first extending portions, second extending portions, and insulation pads. The first sensing lines are disposed on the substrate in parallel with a first direction. The second sensing lines are disposed on the substrate in parallel with a second direction. The first sensing lines intersect the second sensing lines to define meshes. The first extending portions are connected to the first sensing lines and extended toward the meshes. The second extending portions are connected to the second sensing lines and extended toward the meshes. The first extending portions and the second extending portions are distributed next to each other in the meshes. The insulation pads are disposed at where the first sensing lines intersect the second sensing lines to insulate the first sensing lines from the second sensing lines. | 12-13-2012 |
20120314392 | CAPACITOR ARRAY SUBSTRATE - A capacitor array substrate includes a substrate, first traces, second traces, capacitors, connecting lines, and signal lines. The substrate has a first, a second, and a third side. The first side is connected with the second and the third side. The first traces are disposed on the substrate in parallel and are not vertical or parallel to the first side. The second traces are disposed on the substrate in parallel. The capacitors are disposed on the substrate at intersections of the first and the second traces and are connected to the first and the second traces. The connecting lines are disposed on the second and the third side of the substrate. Each connecting line is connected to a first and a second trace. The signal lines are disposed on the substrate. Each signal line is connected to a first or a second trace and transmits signals from the first side. | 12-13-2012 |
20120319967 | SINGLE FPC BOARD FOR CONNECTING MULTIPLE MODULES AND TOUCH SENSITIVE DISPLAY MODULE USING THE SAME - A single flexible printed circuit (FPC) board for connecting multiple modules including a thin film is provided. The thin film has a first module connecting portion, a second module connecting portion and a third module connecting portion. The first module connecting portion is located on a first side of the thin film. The second module connecting portion and the third module connecting portion are located on a second side of the thin film. The first side is opposite to the second side. At least one first line is disposed between the first module connecting portion and the second module connecting portion. At least one second line is disposed between the first module connecting portion and the third module connecting portion. | 12-20-2012 |
20130044088 | DATA TRANSMISSION METHOD AND DISPLAY DRIVING SYSTEM - A data transmission method applied in a display, which includes a display panel, is provided. The data transmission method includes the following steps of: providing a host controller and n display drivers, n is a natural number greater than 1; providing a communication link under mobile industry processor interface (MIPI), connecting the host controller to the n display drivers; determining n virtual channel values Vc1-Vcn corresponding to the respective n display drivers; employing the host controller for providing a command with a virtual channel parameter through the communication link under MIPI; when the virtual channel parameter corresponds to an i | 02-21-2013 |
20130044089 | DATA TRANSMISSION METHOD AND DISPLAY DRIVING SYSTEM - A data transmission method applied in a display, which includes a display panel, is provided. The data transmission method includes the following steps of: providing a host controller and n display drivers, n is a natural number greater than 1; providing a communication link under mobile industry processor interface (MIPI), connecting the host controller to the n display drivers; determining n virtual channel values Vc | 02-21-2013 |
20130088502 | DISPLAY DRIVING DEVICE - A display driving device is disclosed. The display driving device includes an image data transmission interface, a frame buffer, and an over-driving processor. The image data transmission interface transmits image data, which is then received by and stored in the frame buffer. The over-driving processor is coupled to the image data transmission interface to receive current image data provided by the image data transmission interface, and also coupled to the frame buffer to receive previous image data saved in the frame buffer. In a dynamic display mode, the over-driving processor generates a display driving signal according to the previous image data and the current image data. | 04-11-2013 |
20130279537 | DISPLAY PANEL TEMPERATURE SENSING APPARATUS - A display panel temperature sensing apparatus, in an embodiment, includes a display panel, at least one temperature-sensing component, at least one passive device, and an oscillation circuit. The at least one temperature-sensing component is disposed on the display panel. The at least one passive device is coupled to the at least one temperature-sensing component to form a resistance-capacitance (RC) structure. The oscillation circuit is coupled to the RC structure and an output terminal of the oscillation circuit outputs a temperature-sensing signal. | 10-24-2013 |
20130285999 | DRIVING APPARATUS OF DISPLAY - A driving apparatus of a display is disclosed. The driving apparatus includes a digital-to-analog converter (DAC) circuit, an output buffer circuit and a pre-charge circuit. The DAC circuit receives a display data with a digital format for generating a gray level voltage. The output buffer circuit is coupled to the DAC circuit, and receives the gray level voltage. The output buffer circuit has an output terminal to output a driving output signal. The pre-charge circuit is coupled to the output buffer circuit, and generates a pre-charge output signal according to the gray level voltage and a pre-charge enable signal, and outputs the pre-charge output signal to the output terminal of the output buffer circuit. | 10-31-2013 |
20140002115 | CAPACITANCE SENSING METHOD | 01-02-2014 |
20140062922 | Touch Sensing Device and Touch Point Locating Method Thereof - A touch sensing device includes a plurality of first dimensional transparent electrodes and a plurality of second dimensional transparent electrodes, for forming a plurality of touch sensing points; one or more signal generators, for generating at least two orthogonal signals simultaneously coupled to at least two of the plurality of first dimensional transparent electrodes; one or more analog to digital converters for receiving a plurality of sensing signals from the plurality of second dimensional transparent electrodes; and one or more calculating units, for converting the plurality of sensing signals, to determine components of the at least two orthogonal signals in the plurality of sensing signals and locates at least one touch point on the plurality of touch sensing points. | 03-06-2014 |
20140097802 | Charging System - The present invention discloses a charging system for charging a capacitor. The charge system includes at least one unit gain buffer, driven by a plurality of driving voltages, each unit gain buffer having a positive input terminal for receiving a target voltage and a negative input terminal coupled to an output terminal, a plurality of switches coupled between the plurality of driving voltages and the capacitor, and a switch control waveform generator, coupled to the plurality of switches, for switching on one of the for a specific driving voltage among the plurality of driving voltages to drive one of the at least one unit gain buffer to charge the capacitor. | 04-10-2014 |
20140218102 | INTEGRATED CIRCUIT - An integrated circuit (IC) including a high-speed signal input pin, a common node, a high-speed signal output pin, and a core circuit is provided. The high-speed signal input pin and the high-speed signal output pin are disposed on a package of the IC. The common node and the core circuit are disposed in the IC. The common node is directly and electrically coupled to the high-speed signal input pin. The high-speed signal output pin is directly and electrically coupled to the common node. A high-speed signal input terminal of the core circuit is directly and electrically coupled to the common node. | 08-07-2014 |
20150015534 | TOUCH PANEL - The touch panel includes a plurality of touch pads arranged in an array on the touch panel. Each of the touch pads are arranged in N columns and M rows, the touch pad in the i | 01-15-2015 |
20150015566 | DRIVING APPARATUS OF DISPLAY - A driving apparatus of a display is disclosed. The driving apparatus includes a digital-to-analog converter (DAC) circuit, an output buffer circuit and a pre-charge circuit. The DAC circuit receives a display data with a digital format for generating a gray level voltage. The output buffer circuit is coupled to the DAC circuit, and has an output terminal to output an output signal. The output buffer circuit receives the gray level voltage and the output signal, and compares the gray level voltage and the output signal to generate a comparison result. The pre-charge circuit is coupled to the output buffer circuit, and generates a pre-charge output signal to the output terminal of the output buffer circuit according to the comparison result and a pre-charge enable signal. | 01-15-2015 |
20150022744 | SINGLE FPC BOARD FOR CONNECTING MULTIPLE MODULES AND TOUCH SENSITIVE DISPLAY MODULE USING THE SAME - A single flexible printed circuit (FPC) board for connecting multiple modules including a thin film is provided. The thin film has a first module connecting portion, a second module connecting portion and a third module connecting portion. The first module connecting portion is located on a first side of the thin film. The second module connecting portion and the third module connecting portion are located on a second side of the thin film. The first side is opposite to the second side. At least one first line is disposed between the first module connecting portion and the second module connecting portion. At least one second line is disposed between the first module connecting portion and the third module connecting portion. | 01-22-2015 |