Patent application number | Description | Published |
20130037793 | AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD - This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel area of the substrate, and a first metal layer on the dielectric layer. Hydrogen ions are implanted with a plasma-immersion ion implantation process in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The hydrogen ion implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate. | 02-14-2013 |
20130114121 | MATCHING LAYER THIN-FILMS FOR AN ELECTROMECHANICAL SYSTEMS REFLECTIVE DISPLAY DEVICE - This disclosure provides systems, methods and apparatus for an electromechanical systems reflective display device. In one aspect, an electromechanical systems display device includes a reflective layer and an absorber layer. The absorber layer is spaced apart from the reflective layer to define a cavity between the absorber layer and the reflective layer. The absorber layer is capable of transmitting light into the cavity, absorbing light, and reflecting light, and includes a metal layer. A plurality of matching layers are on a surface of the absorber layer facing away from the cavity, the plurality of matching layers including a first matching layer disposed on the absorber layer and a second matching layer disposed on the first matching layer. | 05-09-2013 |
20130127694 | AMORPHOUS OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR FABRICATION METHOD - This disclosure provides systems, methods and apparatus for fabricating thin film transistor (TFT) devices. In one aspect, a substrate having a source area, a drain area, and a channel area is provided. Metal cations are implanted in the oxide semiconductor layer overlying the source area and the drain area of the substrate. The metal cation implantation forms a doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source area and the drain area of the substrate. | 05-23-2013 |
20130265216 | MULTI-STATE IMOD WITH RGB ABSORBERS - A display apparatus may include a multi-state IMOD, such as an analog IMOD (AIMOD), a 3-state IMOD (such as having a white state, a black state and one colored state) or a 5-state IMOD (such as having a white state, a black state and three colored states). The multi-state IMOD may include a movable reflective layer and an absorber stack. The absorber stack may include a first absorber layer having a first absorption coefficient and a first absorption peak at a first wavelength, a second absorber layer having a second absorption coefficient and a second absorption peak at a second wavelength, and a third absorber layer having a third absorption coefficient and a third absorption peak at a third wavelength. The first, second and third absorption layers may have absorption levels that drop to nearly zero at the center of each neighboring absorber layer's absorption peak. | 10-10-2013 |
20140036340 | THIN FILM STACK WITH SURFACE-CONDITIONING BUFFER LAYERS AND RELATED METHODS - This disclosure provides systems, methods and apparatus for a thin film stack with surface-conditioning buffer layers. In one aspect, the thin film stack includes a plurality of thin film layers each having a thickness greater than about 10 nm and a plurality of surface-conditioning buffer layers each having a thickness between about 1 nm and about 10 nm. The surface-conditioning buffer layers are alternatingly disposed between the thin film layers. Each of the surface-conditioning buffer layers are formed with the same or substantially the same thickness and composition. In some implementations, the surface-conditioning buffer layers are formed by atomic layer deposition. | 02-06-2014 |
20140125707 | COLOR PERFORMANCE AND IMAGE QUALITY USING FIELD SEQUENTIAL COLOR (FSC) TOGETHER WITH SINGLE-MIRROR IMODS - This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for applying field-sequential color (FSC) methods to displays that include single-mirror interferometric modulators (IMODs), which may be multi-state IMODs or analog IMODs. In one aspect, grayscale levels may be provided by varying a mirror/absorber gap height between black and white states. In other implementations, grayscale levels may be obtained by varying the gap height between the black state and second-order color peaks. | 05-08-2014 |
20140132756 | REAL-TIME COMPENSATION FOR BLUE SHIFT OF ELECTROMECHANICAL SYSTEMS DISPLAY DEVICES - This disclosure provides systems, methods, and apparatus related to electromechanical systems display devices. In one aspect, an apparatus includes a display assembly, a sensor, and a processor. The display assembly may include an array of electromechanical systems display devices. The sensor may be configured to provide a signal indicative of an illumination angle, a viewing angle, or both, with respect to a line perpendicular to the display assembly. The processor may be configured to receive the signal from the sensor, to determine the illumination angle and/or viewing angle, and to process image data to compensate for the determined illumination angle and/or viewing angle. In one implementation, the image data is processed to compensate for a shift in a wavelength of light reflected from at least one of the electromechanical systems display devices that would have occurred as a result of a non-normal illumination and/or viewing angle. | 05-15-2014 |
20140218784 | MATCHING LAYER THIN-FILMS FOR AN ELECTROMECHANICAL SYSTEMS REFLECTIVE DISPLAY DEVICE - This disclosure provides systems, methods and apparatus for an electromechanical systems reflective display device. In one aspect, an electromechanical systems display device includes a reflective layer and an absorber layer. The absorber layer is spaced apart from the reflective layer to define a cavity between the absorber layer and the reflective layer. The absorber layer is capable of transmitting light into the cavity, absorbing light, and reflecting light, and includes a metal layer. A plurality of matching layers are on a surface of the absorber layer facing away from the cavity, the plurality of matching layers including a first matching layer disposed on the absorber layer and a second matching layer disposed on the first matching layer. | 08-07-2014 |
20140267197 | COLOR PERFORMANCE OF IMODS - This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for making and controlling single-mirror interferometric modulators (IMODs), which may be multi-state IMODs or analog IMODs. In one aspect, a movable reflector stack or an absorber stack of an IMOD may include at least one protrusion that is configured to cause the movable reflector stack to be tilted relative to the absorber layer when the movable reflector stack is moved close to the absorber stack. The protrusion may be configured to cause color averaging when the IMOD is in a white state. The absorber stack may include an absorber layer having a lower extinction coefficient value at a red wavelength and a higher extinction coefficient value at a blue wavelength. | 09-18-2014 |
20140300946 | ANALOG IMOD HAVING A COLOR NOTCH FILTER - This disclosure provides systems, methods and apparatus related to an electromechanical display device. In one aspect, an analog interferometric modulator (AIMOD) includes a reflective display pixel having a movable reflective layer and a stationary absorber layer, the reflective layer and absorber layer defining a cavity therebetween. A color notch filter may be employed to produce an improved white state. In some implementations, the color notch filter is positioned on a side of the substrate opposite the absorber layer. In some other implementations, the color notch filter is positioned between the substrate and the movable reflective layer. | 10-09-2014 |
20150022876 | MULTI-STATE INTERFEROMETRIC MODULATOR WITH COLOR ATTENUATOR - This disclosure provides systems, methods and apparatus for multi-state interferometric modulator (MS-IMOD) implementations with an improved white-state color by incorporating an attenuator. The attenuator may be part of a mirror stack or part of an absorber stack. The attenuator may be capable of reducing the amount of green light reflected when the MS-IMOD is in a white state. The attenuator may include an absorber and/or a notch filter. In some implementations, the white color that is reflected when the MS-IMOD is in the white state may be substantially similar to that of CIE Standard Illuminant D65. | 01-22-2015 |