Patent application number | Description | Published |
20100314620 | SEMICONDUCTOR DEVICE - To suppress or prevent the generation of a crack in an insulating film below an external terminal which could be caused by an external force added to the external terminal of a semiconductor device. A top wiring layer MH of wiring layers formed on a main surface of a silicon substrate has a pad comprising a conductor pattern containing aluminum. On an undersurface of the pad, there are arranged a barrier conductor film formed by laminating, from below, a first barrier conductor film and a second barrier conductor film. Of a fifth wiring layer which is one layer lower than the top wiring layer, in an area overlapping with a probe contact area of the pad in a plane, the conductor pattern is not arranged. Further, the first and second barrier conductor films are the conductor films including titanium and titanium nitride as principal components, respectively. Also, the first barrier conductor film is thicker than the second barrier conductor film. | 12-16-2010 |
20120202344 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a technology capable of preventing corrosion of a Cu wiring and thereby improving a production yield of a semiconductor device, a manufacturing method of a semiconductor device includes the steps of: removing a portion of a Cu film other than that in a wiring trench in a semiconductor substrate by CMP using a polishing slurry, removing a portion of a barrier metal film other than that in the, wiring trench by CMP using a polishing slurry containing an anticorrosive, polishing the surface of the Cu film and the surface of the barrier metal film by CMP using pure water, thereafter cleaning the semiconductor substrate with pure water without applying an anticorrosive thereto or without cleaning it with a chemical liquid, and thereafter cleaning the semiconductor substrate with a chemical liquid without applying an anticorrosive thereto. | 08-09-2012 |
Patent application number | Description | Published |
20090107658 | Metallic material for brazing, brazing method, and heat exchanger - A brazing method is provided for brazing a metallic material for brazing to another metallic material. The metallic material for brazing includes a base material portion made of copper or a copper alloy containing chrome by a predetermined amount, and a metallic film portion made of a material having a melting point lower than a heating temperature in brazing, and provided on the surface of the base material portion. The brazing method includes a step of assembling the metallic material for brazing and the another metallic material to form an assembly, a step of heating and brazing the assembly, in which the metallic film portion is melted to diffuse chrome into a surface of the metallic material for brazing, and a step of forming a chrome oxide film by using the chrome diffused into the surface of the metallic material for brazing in atmosphere after the brazing step. | 04-30-2009 |
20090297882 | Brazing filler metal, brazing filler metal paste, and heat exchanger - A brazing filler metal includes quaternary alloy powder and copper powder. The quaternary allow powder consists of from 0.1 to 27.4 mass percent tin, from 0.8 to 5.1 mass percent nickel, from 2.2 to 10.9 mass percent phosphorous and a balance including copper and any unavoidable impurity. The brazing filler metal can be used in a form of paste by being mixed with an organic binder and an organic solvent. The brazing filler metal and the brazing filler metal can be used for joining members made of copper or copper alloy, such as members of a heat exchanger. | 12-03-2009 |
20100252244 | Tube and heat exchanger using the same, and method of manufacturing tube - A tube for a heat exchanger is formed by bending a three-layer clad material of an aluminum alloy to have an overlapped portion. The three-layer clad material is formed by a core material layer containing Mg not smaller than 0.2 wt % after brazing, a brazing material layer on one surface of the core material layer, and a high melting-point material layer on the other surface of the core material layer. The brazing material layer has a thickness not smaller than 25 μm before the brazing, and has a melting point lower than 600° C. The high melting-point material layer has a melting point equal to or higher than 600° C. In addition, the brazing material layer and the high melting-point material layer opposite to each other in the overlapped portion are bonded by the brazing at a temperature not lower than 450° C. for a time within 12 minutes. | 10-07-2010 |