Patent application number | Description | Published |
20090170570 | PORTABLE WIRELESS DEVICE - A portable wireless device is formed of a lower housing and an upper housing coupled together by a hinged section, which makes the device foldable. A lower circuit board is coupled to an upper circuit board by a flexible cable, which is placed away from a power feeder of an antenna element with a given space and near the hinged section along the width direction of this foldable device. An end of conductive element is shorted to the lower circuit board with a shorting conductor near a connector which couples the flexible cable to the lower circuit board. The foregoing structure allows the portable and foldable wireless device to reduce an amount of energy supposed to be absorbed into a temporal region of a human body while the electric power of the transmitted radio wave is maintained during a phone conversation. | 07-02-2009 |
20100307787 | SLIDABLE-TYPE PORTABLE TERMINAL - A slidable-type portable terminal has a first enclosure; a second enclosure; a first board arranged in the first enclosure; a second board arranged in the second enclosure; an antenna electrically connected to the first board; a connecting unit that electrically connects together the first board and the second board; a plurality of sliding units that slidably connects the first enclosure to the second enclosure; and a conductor for electrically connecting the connecting unit to one of the plurality of sliding units. The one of the plurality of sliding units is electrically connected to a ground of the connecting unit by means of the conductor. | 12-09-2010 |
20110032161 | MOBILE TERMINAL DEVICE - In a mobile terminal device, a hinge member and a conductive member provided on a chassis and functioning as an antenna are electrically contacted with each other through the slide operation of a chassis and thereby can be configured as an antenna usable in various use situations without providing a separate antenna. Consequently, the mobile terminal device is provided, the manufacture cost of which can be suppressed, the size and thickness of which can be reduced, and which can prevent antenna characteristics from degrading because the antenna is not provided at a portion gripped by a hand. In the device, a first chassis ( | 02-10-2011 |
20110037044 | INFORMATION RECORDING DEVICE AND INFORMATION RECORDING/REPRODUCTION SYSTEM INCLUDING THE SAME - This disclosure provides an information recording device for use in a non-volatile information recording/reproduction system having a high recording density, the device including a resistive material having less phase separation or the like during switching. This disclosure also provides an information recording/reproduction system including the device. This disclosure provides an information recording device including: a pair of electrodes; and a recording layer between the electrodes, the recording layer recording information by its resistance change, the recording layer including at least one of (a) M | 02-17-2011 |
20110080327 | PORTABLE WIRELESS MACHINE - A decrease in antenna currents that are oriented in opposite directions and that flow through enclosures and enhancement of an antenna characteristic are accomplished without impairment of a design characteristic of the enclosures and while being made feasible to achieve a reduction in size and thickness. | 04-07-2011 |
20110241951 | PORTABLE WIRELESS APPARATUS - Disclosed is a portable wireless apparatus that can be miniaturised and reduced in thickness without increasing in manufacturing costs and that can prevent degradation of reception sensitivity when placed on a metal plate, without impairing design characteristics. In this apparatus, a conductive hinge ( | 10-06-2011 |
20120062428 | PORTABLE RADIO - There is provided a portable radio that exhibits high waterproof property and dust resistance property without impairing toughness and antenna performance while pursuing a smaller size. | 03-15-2012 |
20120068895 | PORTABLE WIRELESS DEVICE - A portable wireless device includes: a first housing including therein an antenna element and a circuit board disposed in parallel therewith; a second housing disposed to overlap with the first housing; and a tilt holding member including a hinge part which rotatably connects one end side of the first housing and one end side of the second housing to each other and which is configured to hold the second housing in a state in which the second housing is tilted with respect to the first housing. The tilt holding member includes a cored bar made of a metal material disposed along an arrangement direction of the circuit board and the antenna element. The cored bar is divided outside an arrangement range of the circuit board at the antenna element side in the arrangement direction. | 03-22-2012 |
20120098851 | MOBILE ELECTRONIC DEVICE - According to one embodiment, a mobile electronic device includes an image projection unit for projecting an image, an image display unit for displaying an image, and a control unit for controlling the image projection unit and the image display unit. When the image projection unit projects an image and the image display unit displays an image, the control unit performs control for making the chromaticity of the image projected by the image projection unit and the chromaticity of the image displayed by the image display unit match each other. | 04-26-2012 |
20130063539 | SIGNAL PROCESSING APPARATUS, SIGNAL PROCESSING METHOD, AND PROGRAM - A signal processing apparatus includes: an audio separator that separates audios into a first audio and a second audio using two inputted audio signals; an audio combiner that combines the first audio with the second audio based on proportions of the audios separated by the audio separator; and an image combiner that combines a first image corresponding to the first audio with a second image corresponding to the second audio based on the proportions of the audios separated by the audio separator. | 03-14-2013 |
20130214238 | Method for Forming Metal Oxides and Silicides in a Memory Device - Embodiments of the invention generally relate to memory devices and methods for fabricating such memory devices. In one embodiment, a method for fabricating a resistive switching memory device includes depositing a metallic layer on a lower electrode disposed on a substrate and exposing the metallic layer to an activated oxygen source while heating the substrate to an oxidizing temperature within a range from about 300° C. to about 600° C. and forming a metal oxide layer from an upper portion of the metallic layer during an oxidation process. The lower electrode contains a silicon material and the metallic layer contains hafnium or zirconium. Subsequent to the oxidation process, the method further includes heating the substrate to an annealing temperature within a range from greater than 600° C. to about 850° C. while forming a metal silicide layer from a lower portion of the metallic layer during a silicidation process. | 08-22-2013 |
20130221315 | Memory Cell Having an Integrated Two-Terminal Current Limiting Resistor - A resistor structure incorporated into a resistive switching memory cell with improved performance and lifetime is provided. The resistor structure may be a two-terminal structure designed to reduce the maximum current flowing through a memory cell. A method is also provided for making such a memory cell. The method includes depositing a resistor structure and depositing a variable resistance layer of a resistive switching memory cell of the memory cell, where the resistor structure is disposed in series with the variable resistance layer to limit the switching current of the memory cell. The incorporation of the resistor structure is very useful in obtaining desirable levels of switching currents that meet the switching specification of various types of memory cells. The memory cells may be formed as part of a high-capacity nonvolatile memory integrated circuit, which can be used in various electronic devices. | 08-29-2013 |
20130297311 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD AND INFORMATION PROCESSING PROGRAM - An information processing apparatus including: a high-quality-voice determining section configured to determine a voice, which can be determined to have been collected under a good condition, as a good-condition voice included in mixed voices pertaining to a group of voices collected under different conditions; and a voice recognizing section configured to carry out voice recognition processing by making use of a predetermined parameter on the good-condition voice determined by the high-quality-voice determining section, modify the value of the predetermined parameter on the basis of a result of the voice recognition processing carried out on the good-condition voice, and carry out the voice recognition processing by making use of the predetermined parameter having the modified value on a voice included in the mixed voices as a voice other than the good-condition voice. | 11-07-2013 |
20130301841 | AUDIO PROCESSING DEVICE, AUDIO PROCESSING METHOD AND PROGRAM - An audio processing device includes: a directivity adjustment unit adjusting directivity and sharpness thereof in audio picked up by plural microphones picking up audio; and a howling suppression adjustment unit adjusting intensity of suppressing howling of audio picked up by the plural microphones, wherein the directivity adjustment unit adjusts the directivity and sharpness thereof in preference to the howling suppression of audio performed by the howling suppression adjustment unit. | 11-14-2013 |
20130304462 | SIGNAL PROCESSING APPARATUS AND METHOD AND PROGRAM - Disclosed herein is a signal processing apparatus including: a first A/D converter configured to execute A/D conversion by adjusting an input signal with a first gain; a second A/D converter configured to execute A/D conversion by adjusting an input signal with a second gain that is smaller than the first gain; a synthesis block configured to synthesize a first signal obtained by conversion by the first A/D converter with a second signal obtained by conversion by the second A/D converter to output a resultant synthesized signal if the first signal is clipped; and a signal processing block configured to execute signal processing by use of the signal outputted from the synthesis block. | 11-14-2013 |
20130334490 | Transition Metal Oxide Bilayers - Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen. | 12-19-2013 |
20130337606 | Nonvolatile Memory Device Using a Tunnel Nitride As A Current Limiter Element - Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. | 12-19-2013 |
20140038380 | Multifunctional Electrode - A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ωcm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed. | 02-06-2014 |
20140117303 | Resistive Random Access Memory Cells Having METAL ALLOY Current Limiting layers - Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from alloys of transition metals. Some examples of such alloys include chromium containing alloys that may also include nickel, aluminum, and/or silicon. Other examples include tantalum and/or titanium containing alloys that may also include a combination of silicon and carbon or a combination of aluminum and nitrogen. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature processing. In some embodiments, the breakdown voltage of a current limiting layer is at least about 8V. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layers while maintaining their performance. | 05-01-2014 |
20140175354 | SEQUENTIAL ATOMIC LAYER DEPOSITION OF ELECTRODES AND RESISTIVE SWITCHING COMPONENTS - Provided are methods of forming nonvolatile memory elements using atomic layer deposition techniques, in which at least two different layers of a memory element are deposited sequentially and without breaking vacuum in a deposition chamber. This approach may be used to prevent oxidation of various materials used for electrodes without a need for separate oxygen barrier layers. A combination of signal lines and resistive switching layers may be used to cap the electrodes and to minimize their oxidation. As such, fewer layers are needed in a memory element. Furthermore, atomic layer deposition allows more precise control of electrode thicknesses. In some embodiments, a thickness of an electrode may be less than 50 Angstroms. Overall, atomic layer deposition of electrodes and resistive switching layers lead to smaller thicknesses of entire memory elements making them more suitable for low aspect ratio features of advanced nodes. | 06-26-2014 |
20140175355 | Carbon Doped Resistive Switching Layers - Provided are carbon doped resistive switching layers, resistive random access memory (ReRAM) cells including these layers, as well as methods of forming thereof. Carbon doping of metal containing materials creates defects in these materials that allow forming and breaking conductive paths as evidenced by resistive switching. Relative to many conventional dopants, carbon has a lower diffusivity in many suitable base materials. As such, these carbon doped materials exhibit structural stability and consistent resistive switching over many operating cycles. Resistive switching layers may include as much as 30 atomic percent of carbon, making the dopant control relatively simple and flexible. Furthermore, carbon doping has acceptor characteristics resulting in a high resistivity and low switching currents, which are very desirable for ReRAM applications. Carbon doped metal containing layer may be formed from metalorganic precursors at temperatures below saturation ranges of atomic layer deposition. | 06-26-2014 |
20140175356 | Resistive Random Access Memory Access Cells Having Thermally Isolating Structures - Provided are resistive random access memory (ReRAM) cells including resistive switching layers and thermally isolating structures for limiting heat dissipation from the switching layers during operation. Thermally isolating structures may be positioned within a stack or adjacent to the stack. For example, a stack may include one or two thermally isolating structures. A thermally isolating structure may directly interface with a switching layer or may be separated by, for example, an electrode. Thermally isolating structures may be formed from materials having a thermal conductivity of less than 1 W/m*K, such as porous silica and mesoporous titanium oxide. A thermally isolating structure positioned in series with a switching layer generally has a resistance less than the low resistance state of the switching layer. A thermally isolating structure positioned adjacent to a switching layer may have a resistance greater than the high resistance state of the switching layer. | 06-26-2014 |
20140175360 | Bilayered Oxide Structures for ReRAM Cells - Provided are resistive random access memory (ReRAM) cells having bi-layered metal oxide structures. The layers of a bi-layered structure may have different compositions and thicknesses. Specifically, one layer may be thinner than the other layer, sometimes as much as 5 to 20 times thinner. The thinner layer may be less than 30 Angstroms thick or even less than 10 Angstroms thick. The thinner layer is generally more oxygen rich than the thicker layer. Oxygen deficiency of the thinner layer may be less than 5 atomic percent or even less than 2 atomic percent. In some embodiments, a highest oxidation state metal oxide may be used to form a thinner layer. The thinner layer typically directly interfaces with one of the electrodes, such as an electrode made from doped polysilicon. Combining these specifically configured layers into the bi-layered structure allows improving forming and operating characteristics of ReRAM cells. | 06-26-2014 |
20140175361 | Resistive Switching Layers Including Hf-Al-O - Provided are resistive random access memory (ReRAM) cells having switching layers that include hafnium, aluminum, oxygen, and nitrogen. The composition of such layers is designed to achieve desirable performance characteristics, such as low current leakage as well as low and consistent switching currents. In some embodiments, the concentration of nitrogen in a switching layer is between about 1 and 20 atomic percent or, more specifically, between about 2 and 5 atomic percent. Addition of nitrogen helps to control concentration and distribution of defects in the switching layer. Also, nitrogen as well as a combination of two metals helps with maintaining this layer in an amorphous state. Excessive amounts of nitrogen reduce defects in the layer such that switching characteristics may be completely lost. The switching layer may be deposited using various techniques, such as sputtering or atomic layer deposition (ALD). | 06-26-2014 |
20140175362 | Limited Maximum Fields of Electrode-Switching Layer Interfaces in Re-RAM Cells - Provided are ReRAM cells, each having at least one interface between an electrode and a resistive switching layers with a maximum field value of less than 0.25. The electrode materials forming such interfaces include tantalum nitrides doped with lanthanum, aluminum, erbium yttrium, or terbium (e.g., Ta | 06-26-2014 |
20140175363 | Forming Nonvolatile Memory Elements By Diffusing Oxygen Into Electrodes - Provided are methods of forming nonvolatile memory elements including resistance switching layers. A method involves diffusing oxygen from a precursor layer to one or more reactive electrodes by annealing. At least one electrode in a memory element is reactive, while another may be inert. The precursor layer is converted into a resistance switching layer as a result of this diffusion. The precursor layer may initially include a stoichiometric oxide that generally does not exhibit resistance switching characteristics until oxygen vacancies are created. Metals forming such oxides may be more electronegative than metals forming a reactive electrode. The reactive electrode may have substantially no oxygen at least prior to annealing. Annealing may be performed at 250-400° C. in the presence of hydrogen. These methods simplify process control and may be used to form nonvolatile memory elements including resistance switching layers less than 20 Angstroms thick. | 06-26-2014 |
20140175367 | Materials for Thin Resisive Switching Layers of Re-RAM Cells - Provided are resistive random access memory (ReRAM) cells that include thin resistive switching layers. In some embodiments, the resistive switching layers have a thickness of less than about 50 Angstroms and even less than about 30 Angstroms. The resistive switching characteristics of such thin layers are maintained by controlling their compositions and using particular fabrication techniques. Specifically, low oxygen vacancy metal oxides, such as tantalum oxide, may be used. The concentration of oxygen vacancies may be less than 5 atomic percent. In some embodiments, the resistive switching layers also include nitrogen and. For example, compositions of some specific resistive switching layers may be represented by Ta | 06-26-2014 |
20140177315 | Multi-Level Memory Array Having Resistive Elements For Multi-Bit Data Storage - A resistor array for multi-bit data storage without the need to increase the size of a memory chip or scale down the feature size of a memory cell contained within the memory chip is provided. The resistor array incorporates a number of discrete resistive elements to be selectively connected, in different series combinations, to at least one memory cell or memory device. In one configuration, by connecting each memory cell or device with at least one resistor array, a resistive switching layer found in the resistive switching memory element of the connected memory device is capable of being at multiple resistance states for storing multiple bits of digital information. During device programming operations, when a desired series combination of the resistive elements within the resistor array is selected, the resistive switching layer in the connected memory device can be in a desired resistance state. | 06-26-2014 |
20140178049 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND PROGRAM - This technology relates to an image processing apparatus, an image processing method, and a program, which enable easier addition of an effect to a moving image. | 06-26-2014 |
20140192585 | Resistive Random Access Memory Cell Having Three or More Resistive States - Provided are resistive random access memory (ReRAM) cells, each having three or more resistive states and being capable of storing multiple bits of data, as well as methods of fabricating and operating such ReRAM cells. Such ReRAM cells or, more specifically, their resistive switching layer have wide range of resistive states and are capable of being very conductive (e.g., about 1 kOhm) in one state and very resistive (e.g., about 1 MOhm) in another state. In some embodiments, a resistance ratio between resistive states may be between 10 and 1,000 even up to 10,000. The resistive switching layers also allow establishing stable and distinct intermediate resistive states that may be assigned different data values. These layers may be configured to switching between their resistive states using fewer programming pulses than conventional systems by using specific materials, switching pluses, and resistive state threshold. | 07-10-2014 |
20140217348 | Transition Metal Oxide Bilayers - Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen. | 08-07-2014 |
20140218337 | ELECTRONIC DEVICE, INPUT PROCESSING METHOD AND PROGRAM - A touch panel layer has an electrostatic capacitance which changes according to a distance from an external object and outputs a signal of intensity which differs according to the change in the electrostatic capacitance. A coordinate acquiring section determines a contact state in which an external object touches the touch panel layer or a proximity state in which the external object is located within a predetermined distance from the touch panel layer, based on the intensity of the signal. A state determination section determines the contact state or the proximity state based on the result of state determination made by the coordinate acquiring section and the result of detection performed by a depression acquiring section. A touch coordinate processing section performs processing associated with a touch input operation. A hover coordinate processing section performs processing associated with a hover operation. | 08-07-2014 |
20140240251 | ELECTRONIC DEVICE - Provided is an electronic device. The electronic device includes a planar display unit, and a touch panel which is disposed so as to overlap the display unit and is capable of detecting a vertical distance between two-dimensional coordinates along a surface of the display unit and a finger. Resolution of the two-dimensional coordinates becomes finer as the vertical distance decreases. Thus, even when the operating finger is immobilized in a state where the electronic device is fixed, a display of a pointer is not wobbled or a display of a screen is not wobbled. In addition, when a line is drawn using a drawing mode, the line is not displayed jaggedly. | 08-28-2014 |
20140253518 | ELECTRONIC DEVICE - There is provided an electronic device that enables sufficient prevention of user's unintended manipulation during hover manipulation which enables performance of manipulation at a position distant from a touch panel. The electronic device a planar display section and a touch panel that is placed while being superimposed on the display section and that enables detection of two dimensional coordinates (x, y) of a finger, which serves as an indicator, on a surface of the display section and a vertical distance (z) from the finger. A valid zone that makes the two dimensional coordinates (x, y) valid is made narrower as the vertical distance (z) between the finger and the touch panel becomes greater. By adoption of such a configuration, it becomes possible to sufficiently prevent performance of user's unintended manipulation during hover manipulation that enables performance of manipulation at a position distant from the touch panel. | 09-11-2014 |
20140267154 | ELECTRONIC DEVICE AND METHOD FOR DETERMINING COORDINATES - The electronic device has a display section with a display surface; and a touch panel that is provided while being superimposed on the display section and that can detect an area occupied by an indicator in which the occupied area is on a predetermined plane which is approximately parallel to and spaced apart by a predetermined distance from the display surface of the display section. When flattening of the area occupied by the indicator is smaller than a threshold value in which the occupied area is on the predetermined plane spaced apart from the display surface of the display section by a predetermined distance, coordinates of the center of the area are made valid. When the flattening is greater than the threshold value, the coordinates of the center of the area are made invalid. | 09-18-2014 |
20140315369 | Resistive Random Access Memory Cells Having METAL ALLOY Current Limiting layers - Provided are semiconductor devices, such as resistive random access memory (ReRAM) cells, that include current limiting layers formed from alloys of transition metals. Some examples of such alloys include chromium containing alloys that may also include nickel, aluminum, and/or silicon. Other examples include tantalum and/or titanium containing alloys that may also include a combination of silicon and carbon or a combination of aluminum and nitrogen. These current limiting layers may have resistivities of at least about 1 Ohm-cm. This resistivity level is maintained even when the layers are subjected to strong electrical fields and/or high temperature processing. In some embodiments, the breakdown voltage of a current limiting layer is at least about 8V. The high resistivity of the layers allows scaling down the size of the semiconductor devices including these layers while maintaining their performance. | 10-23-2014 |
20140319443 | Sequential Atomic Layer Deposition of Electrodes and Resistive Switching Components - Provided are methods of forming nonvolatile memory elements using atomic layer deposition techniques, in which at least two different layers of a memory element are deposited sequentially and without breaking vacuum in a deposition chamber. This approach may be used to prevent oxidation of various materials used for electrodes without a need for separate oxygen barrier layers. A combination of signal lines and resistive switching layers may be used to cap the electrodes and to minimize their oxidation. As such, fewer layers are needed in a memory element. Furthermore, atomic layer deposition allows more precise control of electrode thicknesses. In some embodiments, a thickness of an electrode may be less than 50 Angstroms. Overall, atomic layer deposition of electrodes and resistive switching layers lead to smaller thicknesses of entire memory elements making them more suitable for low aspect ratio features of advanced nodes. | 10-30-2014 |
20140320429 | ELECTRONIC DEVICE AND COORDINATE DETECTION METHOD - An electronic device includes a housing, a planar display section, a planar transparent member, a touch panel layer which detects two-dimensional coordinates of an indicator having a predetermined conductivity along a surface of the display section and a vertical distance to the indicator, and an acceleration detection section which detects at least one of an acceleration of the housing and an acceleration of the transparent member. The two-dimensional coordinates are determined as effective coordinates when the vertical distance is equal to or smaller than a first value. The two-dimensional coordinates are determined as the effective coordinates when the vertical distance is more than the first value and is equal to or smaller than a second value more than the first value, and the acceleration detection section detects a predetermined acceleration. | 10-30-2014 |
20140361235 | Nonvolatile Resistive Memory Element With A Metal Nitride Containing Switching Layer - A nonvolatile resistive memory element has a novel variable resistance layer that includes a metal nitride, a metal oxide-nitride, a two-metal oxide-nitride, or a multilayer stack thereof. One method of forming the novel variable resistance layer comprises an interlayer deposition procedure, in which metal oxide layers are interspersed with metal nitride layers and then converted into a substantially homogeneous layer by an anneal process. Another method of forming the novel variable resistance layer comprises an intralayer deposition procedure, in which various ALD processes are sequentially interleaved to form a metal oxide-nitride layer. Alternatively, a metal oxide is deposited, nitridized, and annealed to form the variable resistance layer or a metal nitride is deposited, oxidized, and annealed to form the variable resistance layer. | 12-11-2014 |
20140362017 | INPUT DEVICE, INPUT CONTROL METHOD, AND INPUT CONTROL PROGRAM - An input device is equipped with a touch panel for detecting an input, a coordinates acquiring unit for detecting input coordinates which are coordinates of the input detected by the touch panel, and a pull manipulation judging unit which, when an input to an input detection surface which is a surface on which the touch panel is placed, makes effective the Z coordinate in the direction perpendicular to the input detection surface among the input coordinates detected by the coordinates acquiring unit. | 12-11-2014 |
20140363920 | Atomic Layer Deposition of Metal Oxides for Memory Applications - Embodiments of the invention generally relate to nonvolatile memory devices and methods for manufacturing such memory devices. The methods for forming improved memory devices, such as a ReRAM cells, provide optimized, atomic layer deposition (ALD) processes for forming a metal oxide film stack which contains at least one hard metal oxide film (e.g., metal is completely oxidized or substantially oxidized) and at least one soft metal oxide film (e.g., metal is less oxidized than hard metal oxide). The soft metal oxide film is less electrically resistive than the hard metal oxide film since the soft metal oxide film is less oxidized or more metallic than the hard metal oxide film. In one example, the hard metal oxide film is formed by an ALD process utilizing ozone as the oxidizing agent while the soft metal oxide film is formed by another ALD process utilizing water vapor as the oxidizing agent. | 12-11-2014 |
20140374240 | MULTIFUNCTIONAL ELECTRODE - A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10Ω cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed. | 12-25-2014 |
20140375588 | ELECTRONIC DEVICE - An electronic device includes a planar display and a touch panel, which overlaps the display. The touch panel has a detection zone that covers at least a vertical distance which is less than a first value and greater than a second value which is smaller than the first value and where two dimensional coordinates and the vertical distance can be detected. The detection zone has a first zone that covers the vertical distance from the first value to the second value and includes a center of the touch panel with respect to the two dimensional coordinates. The first zone, in which the vertical distance is a specific value between the first value and the second value, narrows as the specific value increases from the second value toward the first value. | 12-25-2014 |
20150042603 | ELECTRONIC DEVICE AND COORDINATE DETECTING METHOD - Disclosed is an electronic device including: a display section that displays information; an electrostatic-capacitance touch panel layer that allows visible light corresponding to display contents of the display section to pass through the touch panel layer and that determines a two-dimensional coordinate indicated by an indicator having conductivity; glass that protects the touch panel layer and that allows visible light corresponding to display contents of the display section to pass through the glass; a depression sensor that detects deformation of the glass; and a control section that validates a two-dimensional coordinate when a plurality of two-dimensional coordinates are determined by the touch panel layer and when deformation is detected by the depression sensor, the two-dimensional coordinate being determined last among the plurality of two-dimensional coordinates. | 02-12-2015 |
20150042610 | ELECTRONIC DEVICE AND COORDINATE DETECTING METHOD - Disclosed is an electronic device including: a display section that displays information; an electrostatic-capacitance touch panel layer that allows visible light corresponding to display contents of the display section to pass through the touch panel layer and that determines a pair of two-dimensional coordinates indicated by an indicator having conductivity; glass that protects the touch panel layer and that allows visible light corresponding to display contents of the display section to pass through the glass; a depression sensor that detects deformation of the glass; and a control section that validates a pair of two-dimensional coordinates when a plurality of pairs of two-dimensional coordinates are determined by the touch panel layer and when deformation is detected by the depression sensor, the pair of two-dimensional coordinates being determined last among the plurality of pairs of two-dimensional coordinates. | 02-12-2015 |
20150060753 | CONTROLLING COMPOSITION OF MULTIPLE OXIDES IN RESISTIVE SWITCHING LAYERS USING ATOMIC LAYER DEPOSITION - A method of fabricating a resistive random access memory (ReRAM) cell may include forming a set of nanolaminate structures over an electrode, such that each structure includes at least one first element oxide layer and at least one second element oxide layer. The overall set is operable as a resistive switching layer in a ReRAM cell. In this set, an average atomic ratio of the first element to the second element is different in at least two nanolaminate structures. This ratio may be less in nanolaminate structures that are closer to electrodes than in the middle nanolaminate structures. Alternatively, this ratio may increase from one end of the set to another. The first element may be less electronegative than the second elements. The first element may be hafnium, while the second element may be one of zirconium, aluminum, titanium, tantalum, or silicon. | 03-05-2015 |
20150077374 | ELECTRONIC DEVICE - An electronic device includes a planar display and a touch panel, which overlaps the display. The touch panel has a detection zone that covers at least a vertical distance which is less than a first value and greater than a second value which is smaller than the first value and where two dimensional coordinates and the vertical distance can be detected. The detection zone has a first zone that covers the vertical distance from the first value to the second value and includes a center of the touch panel with respect to the two dimensional coordinates. The first zone, in which the vertical distance is a specific value between the first value and the second value, narrows as the specific value increases from the second value toward the first value. | 03-19-2015 |