Patent application number | Description | Published |
20110177455 | POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A polymer comprising recurring units of formula (1) and having a solubility in alkaline developer which increases under the action of an alkaline developer is provided. The polymer has transparency to radiation of up to 200 nm and improved water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer to formulate a resist composition. R | 07-21-2011 |
20110250539 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A fluorinated monomer has formula (1) wherein R | 10-13-2011 |
20120083580 | FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID - A fluorinated ester monomer is provided having formula (1) wherein R | 04-05-2012 |
20120148945 | RESIST COMPOSITION AND PATTERNING PROCESS - A polymer having a partial structure —C(CF | 06-14-2012 |
20130034813 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS - A chemically amplified positive resist composition comprising (A) a sulfonium salt of 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The carboxylic acid sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed. | 02-07-2013 |
20130108964 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS | 05-02-2013 |
20140051024 | FLUORINATED ESTER MONOMER, MAKING METHOD, FLUORINATED ESTER POLYMER, AND DIFLUOROHYDROXYCARBOXYLIC ACID - A fluorinated ester monomer is provided having formula (1) wherein R | 02-20-2014 |
20140114080 | FLUORINATED MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A fluorinated monomer has formula (1) wherein R | 04-24-2014 |