Patent application number | Description | Published |
20080210762 | Semiconductor device and power receiving device - An object is to provide a semiconductor device that is capable of wireless communication, such as an RFID tag, which can transmit and receive individual information without checking remaining capacity of a battery or changing batteries due to deterioration with time in the battery for a drive power supply voltage, and maintain a favorable a transmission/reception state even when electric power of an electromagnetic wave from a reader/writer is not sufficient. The semiconductor device includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, an antenna circuit group, a rectifier circuit group and a battery connected to the signal processing circuit. The first antenna circuit transmits and receives a signal for transmitting data stored in the signal processing circuit and drives a power supply circuit, and each antenna circuit of the antenna circuit group receives a signal for charging the battery and includes an antenna which has a different corresponding frequency. | 09-04-2008 |
20080252254 | Power storage device and semiconductor device provided with the power storage device - An object is to provide a power storage device provided with a battery that is a power storage means, for safe and accurate supply of electric power in a short period of time for drive power supply voltage without checking remaining capacity of the battery or changing batteries with deterioration over time of the battery for drive power supply voltage. The power storage device is provided with a battery that is a power storage means as a power supply for supplying electric power and a counter circuit for counting charging time of the power storage means. An electromagnetic wave with electric field intensity, magnetic field intensity, and power flux density per unit time which are transmitted from a power feeder are controlled, and the power storage means is efficiently charged using the electromagnetic wave in a short period of time. | 10-16-2008 |
20080287073 | Clock generation circuit and semiconductor device provided therewith - It is an object of the present invention to solve a problem that malfunction of communication is generated by varying a frequency of a clock due to noise from outside in a case where there is no supplied signal in a circuit which performs negative feedback control so that the supplied signal and the feedback signal can maintain a fixed phase relationship between the signals. The present invention provides a configuration including a PLL circuit and an oscillator circuit, where a switch for switching an output between a signal from the PLL circuit and a signal from the oscillator circuit to the signal output portion is provided to switch from a connection to the PLL circuit to a connection to the oscillator circuit in a case where there is no received signal. | 11-20-2008 |
20090027580 | Liquid crystal display device and electronic device - It is an object to provide a liquid crystal display device and an electronic device of which aperture ratio increases. The present invention includes a substrate having an insulating surface, a transistor formed over the substrate, a pixel electrode electrically connected to the transistor. The transistor includes a gate electrode, a gate insulating layer over the gate electrode, a semiconductor layer having a microcrystalline structure over the gate insulating layer, and a buffer layer over the semiconductor layer having the microcrystalline structure. The channel width W of the transistor and the channel length L of the transistor satisfy a relation of 0.1≦W/L≦1.7. | 01-29-2009 |
20090096534 | VOLTAGE CONTROLLED OSCILLATOR CIRCUIT, PHASE-LOCKED LOOP CIRCUIT USING THE VOLTAGE CONTROLLED OSCILLATOR CIRCUIT, AND SEMICONDUCTOR DEVICE PROVIDED WITH THE SAME - A VCO circuit includes: a control portion to which a first voltage is inputted and from which a second voltage corresponding to the first voltage is outputted; a current source portion to which the second voltage is inputted and from which a current corresponding to the second voltage is outputted; and an oscillator circuit to which the current is inputted and from which a signal with a frequency in accordance with the current is outputted. The control portion includes an adjusting circuit which changes the second voltage in conjunction with fluctuation of a power supply voltage. Accordingly, fluctuation of the frequency Fo of an output signal of the VCO circuit can be suppressed even when the power supply voltage of the VCO circuit fluctuates. | 04-16-2009 |
20090308933 | Wireless power receiving device - To provide a wireless power receiving device and an electronic device having the wireless power receiving device whose production costs do not increase even when frequency of electromagnetic waves received for power supply varies. Further, to provide a wireless power receiving device capable of power transmission without disconnection or poor connection when a load supplied with electricity and a battery connected to an antenna are manufactured in different steps. A power transmitter and receiver portion having first and second antenna circuits and a battery portion and a load portion having a third antenna circuit are provided to charge a battery of the battery portion with a first radio signal received at the first antenna circuit and transmit electricity stored in the battery portion as a second radio signal from the second antenna circuit to the third antenna circuit so that the third antenna circuit supplies electricity to the load. | 12-17-2009 |
20100079425 | DISPLAY DEVICE - A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit. | 04-01-2010 |
20100102313 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced. | 04-29-2010 |
20100102314 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. The pixel portion and the driver portion are provided over the same substrate, whereby manufacturing cost can be reduced. | 04-29-2010 |
20100283425 | POWER STORAGE DEVICE AND SEMICONDUCTOR DEVICE PROVIDED WITH THE POWER STORAGE DEVICE - An object is to provide a power storage device provided with a battery that is a power storage means, for safe and accurate supply of electric power in a short period of time for drive power supply voltage without checking remaining capacity of the battery or changing batteries with deterioration over time of the battery for drive power supply voltage. The power storage device is provided with a battery that is a power storage means as a power supply for supplying electric power and a counter circuit for counting charging time of the power storage means. An electromagnetic wave with electric field intensity, magnetic field intensity, and power flux density per unit time which are transmitted from a power feeder are controlled, and the power storage means is efficiently charged using the electromagnetic wave in a short period of time. | 11-11-2010 |
20100289331 | ELECTRIC POWER SUPPLY SYSTEM AND ELECTRIC POWER SUPPLY SYSTEM FOR MOTOR VEHICLE - To provide for a movable electronic device a power receiving device that when charging a battery, simplifies charging of the battery from a power feeder, which is a power supply means, and does not have faults due to an external factor relating to a relay terminal, or damage of the relay terminal, that are caused by directly connecting the battery and the power feeder, and further, to provide an electronic device including the power receiving device. An antenna circuit and a booster antenna for supplying electric power are provided in a movable electronic device. The antenna circuit receives a radio signal such as an electromagnetic wave via the booster antenna, and electric power that is obtained through the receiving of the radio signal is supplied to the battery through a signal processing circuit. | 11-18-2010 |
20110006852 | PLL CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME - A PLL circuit includes a phase detector, a loop filter (LF), a voltage-controlled oscillator (VCO), and a frequency divider. The phase detector compares a phase of a signal Fs which is input from outside with a phase of a signal Fo/N which is input from the frequency divider. The loop filter generates a signal Vin by removing alternating current components from a signal input from the phase detector. The voltage-controlled oscillator outputs a signal Fo based on the signal Vin input from the loop filter. The frequency divider converts the signal Fo output from the voltage-controlled oscillator into Fo/N (frequency division by N), and outputs it to the phase detector. | 01-13-2011 |
20110050165 | SEMICONDUCTOR DEVICE, COMMUNICATION SYSTEM, AND METHOD OF CHARGING THE SEMICONDUCTOR DEVICE - An object of the present invention to provide a semiconductor device including a battery that can be wirelessly charged, in which the battery can be charged even when the semiconductor device is not put close to a power feeder. Such a semiconductor device has a structure including an antenna circuit, a communication control circuit to conduct wireless communication via the antenna circuit, a battery to be charged with electric power which is externally wirelessly fed via the antenna circuit, and an oscillator circuit to wirelessly feed electric power via the antenna circuit. In addition, the battery in the semiconductor device is wirelessly charged and the semiconductor device externally feeds electric power wirelessly to a chargeable battery in another semiconductor device. | 03-03-2011 |
20110057610 | WIRELESS POWER STORAGE DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE WIRELESS POWER STORAGE DEVICE, AND METHOD FOR OPERATING THE SAME - To simplify charging of a battery in a power storage device which includes the battery. Further, to provide a wireless power storage device which can transmit and receive information without the task of replacing a battery for drive power supply, which becomes necessary when the battery depletes over time, being performed. An antenna circuit, a battery which is electrically connected to the antenna circuit via a rectifier circuit, and a load portion which is electrically connected to the battery are provided. The battery is charged when an electromagnetic wave received by the antenna circuit is input to the battery via the rectifier circuit, and discharged when electrical power which has been charged is supplied to the load portion. The battery is charged cumulatively, and the battery is discharged in pulses. | 03-10-2011 |
20110133796 | CLOCK GENERATION CIRCUIT AND SEMICONDUCTOR DEVICE PROVIDED THEREWITH - It is an object of the present invention to solve a problem that malfunction of communication is generated by varying a frequency of a clock due to noise from outside in a case where there is no supplied signal in a circuit which performs negative feedback control so that the supplied signal and the feedback signal can maintain a fixed phase relationship between the signals. The present invention provides a configuration including a PLL circuit and an oscillator circuit, where a switch for switching an output between a signal from the PLL circuit and a signal from the oscillator circuit to the signal output portion is provided to switch from a connection to the PLL circuit to a connection to the oscillator circuit in a case where there is no received signal. | 06-09-2011 |
20110163820 | VOLTAGE CONTROLLED OSCILLATOR CIRCUIT, PHASE-LOCKED LOOP CIRCUIT USING THE VOLTAGE CONTROLLED OSCILLATOR CIRCUIT, AND SEMICONDUCTOR DEVICE PROVIDED WITH THE SAME - A VCO circuit includes: a control portion to which a first voltage is inputted and from which a second voltage corresponding to the first voltage is outputted; a current source portion to which the second voltage is inputted and from which a current corresponding to the second voltage is outputted; and an oscillator circuit to which the current is inputted and from which a signal with a frequency in accordance with the current is outputted. The control portion includes an adjusting circuit which changes the second voltage in conjunction with fluctuation of a power supply voltage. Accordingly, fluctuation of the frequency Fo of an output signal of the VCO circuit can be suppressed even when the power supply voltage of the VCO circuit fluctuates. | 07-07-2011 |
20110187328 | WIRELESS POWER STORAGE DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE WIRELESS POWER STORAGE DEVICE, AND METHOD FOR OPERATING THE SAME - To simplify charging of a battery in a power storage device which includes the battery. Further, to provide a wireless power storage device which can transmit and receive information without the task of replacing a battery for drive power supply, which becomes necessary when the battery depletes over time, being performed. An antenna circuit, a battery which is electrically connected to the antenna circuit via a rectifier circuit, and a load portion which is electrically connected to the battery are provided. The battery is charged when an electromagnetic wave received by the antenna circuit is input to the battery via the rectifier circuit, and discharged when electrical power which has been charged is supplied to the load portion. The battery is charged cumulatively, and the battery is discharged in pulses. | 08-04-2011 |
20110215768 | POWER STORAGE DEVICE AND SEMICONDUCTOR DEVICE PROVIDED WITH THE POWER STORAGE DEVICE - An object is to provide a power storage device provided with a battery that is a power storage means, for safe and accurate supply of electric power in a short period of time for drive power supply voltage without checking remaining capacity of the battery or changing batteries with deterioration over time of the battery for drive power supply voltage. The power storage device is provided with a battery that is a power storage means as a power supply for supplying electric power and a counter circuit for counting charging time of the power storage means. An electromagnetic wave with electric field intensity, magnetic field intensity, and power flux density per unit time which are transmitted from a power feeder are controlled, and the power storage means is efficiently charged using the electromagnetic wave in a short period of time. | 09-08-2011 |
20120013342 | SEMICONDUCTOR DEVICE - A semiconductor device with a built-in battery whose residual amount of the electrical energy can be detected accurately. The semiconductor device has a battery, a demodulation circuit, a control circuit which generates a signal having information about the residual amount of the electrical energy stored in the battery, and a transmission medium which displays the residual amount of the electrical energy in accordance with the signal. The demodulation circuit demodulates a signal input from an antenna which requests display of the residual amount of the electrical energy. Based on the demodulated signal, the control circuit starts to generate a signal having information about the residual amount of the electrical energy in the battery. | 01-19-2012 |
20120019192 | SEMICONDUCTOR DEVICE, COMMUNICATION SYSTEM, AND METHOD OF CHARGING THE SEMICONDUCTOR DEVICE - An object of the present invention to provide a semiconductor device including a battery that can be wirelessly charged, in which the battery can be charged even when the semiconductor device is not put close to a power feeder. Such a semiconductor device has a structure including an antenna circuit, a communication control circuit to conduct wireless communication via the antenna circuit, a battery to be charged with electric power which is externally wirelessly fed via the antenna circuit, and an oscillator circuit to wirelessly feed electric power via the antenna circuit. In addition, the battery in the semiconductor device is wirelessly charged and the semiconductor device externally feeds electric power wirelessly to a chargeable battery in another semiconductor device. | 01-26-2012 |
20120061668 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, a problem of higher manufacturing cost, because it is difficult to mount an IC chip including a driver circuit for driving of the gate and signal lines by bonding or the like. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver portion are provided over the same substrate, manufacturing cost can be reduced. | 03-15-2012 |
20120062315 | PLL CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE SAME - A PLL circuit includes a phase detector, a loop filter (LF), a voltage-controlled oscillator (VCO), and a frequency divider. The phase detector compares a phase of a signal Fs which is input from outside with a phase of a signal Fo/N which is input from the frequency divider. The loop filter generates a signal Vin by removing alternating current components from a signal input from the phase detector. The voltage-controlled oscillator outputs a signal Fo based on the signal Vin input from the loop filter. The frequency divider converts the signal Fo output from the voltage-controlled oscillator into Fo/N (frequency division by N), and outputs it to the phase detector. | 03-15-2012 |
20120104386 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. The pixel portion and the driver portion are provided over the same substrate, whereby manufacturing cost can be reduced. | 05-03-2012 |
20120126238 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS USING THE SAME - A semiconductor device with high function, multifunction and high added value. The semiconductor device includes a PLL circuit that is provided over a substrate and outputs a signal with a correct frequency. By providing such a PLL circuit over the substrate, a semiconductor device with high function, multifunction and high added value can be achieved. | 05-24-2012 |
20120175753 | THIN SEMICONDUCTOR DEVICE AND OPERATION METHOD OF THIN SEMICONDUCTOR DEVICE - The present invention provides a thin semiconductor device in which its security such as prevention of counterfeit or information leakage is to be enhanced. One feature of the present invention is a thin semiconductor device in which a plurality of thin film integrated circuits are mounted and in which at least one integrated circuit is different from the other integrated circuits in any one of a specification, layout, frequency for transmission or reception, a memory, a communication means, a communication rule and the like. According to the present invention, a thin semiconductor device tag having the plurality of thin film integrated circuits communicates with a reader/writer and at least one of the thin film integrated circuits receives a signal to write information in a memory, and the information written in the memory determines which of the thin film integrated circuits communicates. | 07-12-2012 |
20120177842 | METHOD FOR MANUFACTURING POWER STORAGE DEVICE - The power extraction efficiency of a nonaqueous electrolyte secondary battery such as a lithium ion battery is improved. A material having magnetic susceptibility anisotropy such as an olivine type oxide including a transition metal element is used for active material particles. The active material particles and an electrolyte solution are mixed to form a slurry. The slurry is applied to a current collector, and then the current collector is left in a magnetic field. Thus, the active material particles are oriented. With the use of active material particles oriented in such a manner, the power extraction efficiency can be improved. | 07-12-2012 |
20120308884 | SINGLE-LAYER AND MULTILAYER GRAPHENE, METHOD OF MANUFACTURING THE SAME, OBJECT INCLUDING THE SAME, AND ELECTRIC DEVICE INCLUDING THE SAME - Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object. | 12-06-2012 |
20120308894 | POWER STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A negative electrode and a power storage device are provided, which have one of an alloy-based particle and an alloy-based whisker and a carbon film including 1 to 50 graphene layers. A surface of the alloy-based particle or the alloy-based whisker is covered with the carbon film. In addition, a method of manufacturing a negative electrode and a method of manufacturing a power storage device are provided, which have the step of mixing an alloy-based particle or an alloy-based whisker with graphene oxide, and the step of heating the mixture in a vacuum or in a reducing atmosphere. | 12-06-2012 |
20120328956 | MULTILAYER GRAPHENE AND POWER STORAGE DEVICE - To provide graphene through which ions can transfer in the direction perpendicular to a plane of the graphene. Multilayer graphene includes a plurality of graphenes stacked in a layered manner. The plurality of graphenes contain a six-membered ring composed of carbon atoms, a poly-membered ring which is a seven or more-membered ring composed of carbon atoms or carbon atoms and one or more oxygen atoms, and an oxygen atom bonded to one of the carbon atoms in the six-membered ring and the poly-membered ring, which is a seven or more-membered ring. The interlayer distance between adjacent graphenes of the plurality of graphenes is greater than 0.34 nm and less than or equal to 0.5 nm, preferably greater than or equal to 0.38 nm and less than or equal to 0.42 nm. | 12-27-2012 |
20120328962 | POWER STORAGE DEVICE, ELECTRODE THEREOF, AND METHOD FOR MANUFACTURING POWER STORAGE DEVICE - To provide a power storage device having excellent charge/discharge cycle characteristics and a high charge/discharge capacity. The following electrode is used as an electrode of a power storage device: an electrode including a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of whisker-like active material bodies. Each of the plurality of whisker-like active material bodies includes at least a core and an outer shell provided to cover the core. The outer shell is amorphous, and a portion between the current collector and the core of the active material bodies is amorphous. Note that a metal layer may be provided instead of the current collector, the active material bodies do not necessarily have to include the core, and a mixed layer may be provided between the current collector and the active material layer. | 12-27-2012 |
20130002624 | DISPLAY DEVICE - A display device of which frame can be narrowed and of which display characteristics are excellent is provided. In a display device including a switch portion or a buffer portion, a logic circuit portion, and a pixel portion, the pixel portion includes a first inverted staggered TFT and a pixel electrode which is connected to a wiring of the first inverted staggered TFT, the switch portion or the buffer portion includes a second inverted staggered TFT in which a first insulating layer, a semiconductor layer, and a second insulating layer are interposed between a first gate electrode and a second gate electrode, the logic circuit portion includes an inverter circuit including a third inverted staggered thin film transistor and a fourth inverted staggered thin film transistor, and the first to the fourth inverted staggered thin film transistors have the same polarity. The inverter circuit may be an EDMOS circuit. | 01-03-2013 |
20130043057 | ELECTRODE FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE - An electrode for a power storage device with good cycle characteristics and high charge/discharge capacity is provided. In addition, a power storage device including the electrode is provided. The electrode for the power storage device includes a conductive layer and an active material layer provided over the conductive layer, the active material layer includes graphene and an active material including a plurality of whiskers, and the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to have holes in part of the active material layer. Further, in the electrode for the power storage device, the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to cover the active material including a plurality of whiskers. Further, the power storage device including the electrode is manufactured. | 02-21-2013 |
20130045418 | METHOD FOR MANUFACTURING GRAPHENE-COATED OBJECT, NEGATIVE ELECTRODE OF SECONDARY BATTERY INCLUDING GRAPHENE-COATED OBJECT, AND SECONDARY BATTERY INCLUDING THE NEGATIVE ELECTRODE - To form graphene to a practically even thickness on an object having an uneven surface or a complex surface, in particular, an object having a surface with a three-dimensional structure due to complex unevenness, or an object having a curved surface. The object and an electrode are immersed in a graphene oxide solution, and voltage is applied between the object and the electrode. At this time, the object serves as an anode. Graphene oxide is attracted to the anode because of being negatively charged, and deposited on the surface of the object to have a practically even thickness. A portion where graphene oxide is deposited is unlikely coated with another graphene oxide. Thus, deposited graphene oxide is reduced to graphene, whereby graphene can be formed to have a practically even thickness on an object having surface with complex unevenness. | 02-21-2013 |
20130052527 | POWER STORAGE DEVICE - A power storage device in which silicon is used as a negative electrode active material layer and which can have an improved performance such as higher discharge capacity, and a method for manufacturing the power storage device are provided. A power storage device includes a current collector and a silicon layer having a function as an active material layer over the current collector. The silicon layer includes a thin film portion in contact with the current collector, a plurality of bases, and a plurality of whisker-like protrusions extending from the plurality of bases. A protrusion extending from one of the plurality of bases is partly combined with a protrusion extending from another one of the plurality of bases. | 02-28-2013 |
20130071739 | NEGATIVE ELECTRODE FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE - Provided is a negative electrode for a power storage device in which charge/discharge capacity is high and deterioration in battery characteristics due to charge/discharge is small. The negative electrode for a power storage device includes a negative electrode active material having a plurality of protrusions and a bar which serves as a connecting bridge over a first protrusion and a second protrusion among the plurality of protrusions. The bar is provided in a direction perpendicular to a direction in which a current collector is bent. An axis of the first protrusion and an axis of the second protrusion are oriented in the same direction. Further, a graphene covering a side surface of the protrusion or covering the side surface of the protrusion and a top surface of the bar may be provided. | 03-21-2013 |
20130071751 | POWER STORAGE DEVICE - A power storage device in which charge capacity and discharge capacity are high and deterioration in battery characteristics due to charge/discharge is small is provided. A power storage device in which charge capacity and discharge capacity are high and output characteristics are excellent is provided. A power storage device in which charge capacity and discharge capacity are high and cycle characteristics are excellent is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector, an active material including a plurality of protrusions protruding from the current collector and an outer shell in contact with and attached to surfaces of the plurality of protrusions, and graphene in contact with and attached to the outer shell. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions. | 03-21-2013 |
20130071762 | POWER STORAGE DEVICE - A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions. | 03-21-2013 |
20130084495 | POWER STORAGE DEVICE - Provided is a power storage device in which charge/discharge capacity is high, charge/discharge can be performed at high speed, and deterioration in battery characteristics due to charge/discharge is small. The power storage device includes a negative electrode including an active material including a plurality of prism-like protrusions. A cross section of each of the plurality of prism-like protrusions, which is perpendicular to the axis of each protrusion, is a polygonal shape or a polygonal shape including a curve, such as a cross shape, an H shape, an L shape, an I shape, a T shape, a U shape, or a Z shape. The active material including the plurality of prism-like protrusions may be covered with graphene. | 04-04-2013 |
20130084496 | POWER STORAGE DEVICE - Provided are an electrode for a power storage device having much better charge/discharge characteristics and a power storage device using the electrode. A plurality of cavities is provided in a surface of an active material layer over a current collector. A graphene covering the active material layer facilitates rapid charge/discharge and prevents breakdown of the current collector caused by charge/discharge. With improved charge/discharge characteristics, an electrode for a power storage device which does not easily deteriorate and a power storage device using the electrode can be provided. | 04-04-2013 |
20130149605 | NEGATIVE ELECTRODE FOR LITHIUM SECONDARY BATTERY, LITHIUM SECONDARY BATTERY, AND MANUFACTURING METHODS THEREOF - A lithium secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and a negative electrode active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. A top surface of the base portion and at least a side surface of the protrusion portion are covered with the negative electrode active material layer. The negative electrode active material layer may be covered with graphene. | 06-13-2013 |
20130273428 | POWER STORAGE DEVICE - A power storage device a positive electrode including a positive electrode active material layer and a negative electrode including a negative electrode active material layer. The positive electrode active material layer includes a plurality of particles of x[Li | 10-17-2013 |
20140170500 | ELECTRODE FOR POWER STORAGE DEVICE AND POWER STORAGE DEVICE - An electrode for a power storage device with good cycle characteristics and high charge/discharge capacity is provided. In addition, a power storage device including the electrode is provided. The electrode for the power storage device includes a conductive layer and an active material layer provided over the conductive layer, the active material layer includes graphene and an active material including a plurality of whiskers, and the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to have holes in part of the active material layer. Further, in the electrode for the power storage device, the graphene is provided to be attached to a surface portion of the active material including a plurality of whiskers and to cover the active material including a plurality of whiskers. Further, the power storage device including the electrode is manufactured. | 06-19-2014 |
20150017541 | POWER STORAGE DEVICE - A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions. | 01-15-2015 |
20150069386 | SEMICONDUCTOR DEVICE - A sensor circuit with high sensitivity to ultraviolet light. Ultraviolet light is detected using a transistor containing an oxide semiconductor. When the transistor is irradiated with ultraviolet light or light including ultraviolet light, the drain current of the transistor depends on the intensity of the ultraviolet light. Data on the intensity of ultraviolet light is obtained by measuring the drain current of the transistor. Since the band gap of an oxide semiconductor is wider than that of silicon, the sensitivity to light with a wavelength in the ultraviolet region can be increased. Furthermore, an increase in dark current caused by temperature rise in the sensor circuit can be suppressed, resulting in a wider allowable ambient temperature range of the sensor circuit. | 03-12-2015 |