Patent application number | Description | Published |
20090241012 | MEMORY CONTROLLER - A memory controller for writing data in a first semiconductor memory including a plurality of memory cells having series-connected current paths and charge storage layers includes a host interface which configured to be receivable of first data from a host apparatus, a second semiconductor memory which temporarily holds second data, and an arithmetic unit which generates the second data in accordance with the state of the first semiconductor memory, temporarily holds the second data in the second semiconductor memory, and writes the first and second data in the first semiconductor memory. When writing the second data, the arithmetic unit does not select a word line adjacent to a select gate line, and selects a word line not adjacent to the select gate line. | 09-24-2009 |
20090268526 | SEMICONDUCTOR MEMORY DEVICE WITH A STACKED GATE INCLUDING A CHARGE STORAGE LAYER AND A CONTROL GATE AND METHOD OF CONTROLLING THE SAME - A semiconductor memory device includes a transfer circuit and a control circuit. The transfer circuit which includes a p-type MOS transistor with a source to which is applied a first voltage and an n-type MOS transistor to whose gate the drain of the p-type MOS transistor is connected and the first voltage is transferred, to whose source a second voltage is applied, and whose drain is connected to a load. The control circuit which turns the p-type MOS transistor on and off and which turns the p-type MOS transistor on to make the p-type MOS transistor transfer the second voltage to the load and, during the transfer, turns the p-type MOS transistor off to make the gate of the n-type MOS transistor float at the first voltage. | 10-29-2009 |
20100329017 | SEMICONDUCTOR DEVICE FOR SHORT-CIRCUITING OUTPUT TERMINALS OF TWO OR MORE VOLTAGE GENERATOR CIRCUITS AT READ TIME AND CONTROL METHOD FOR THE SAME - According to one embodiment, a semiconductor device includes a first voltage generator, a second voltage generator, a first MOS transistor, and a controller. The first voltage generator outputs a first voltage to a first node. The second voltage generator outputs a second voltage to a second node. The first MOS transistor is capable of short-circuiting the first node and second node. The controller performs a control operation to short-circuit the first node and second node by turning on the first MOS transistor. The controller controls a period in which the first MOS transistor is kept in an on state based on time. | 12-30-2010 |
20110182125 | SEMICONDUCTOR MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF DATA ERASE IN THE SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device in accordance with an embodiment comprises a memory cell array and an erase voltage generating circuit. The memory cell array is configured as an arrangement of nonvolatile memory cells. The erase voltage generating circuit is configured to generate an erase voltage for performing data erase of the memory cell array. The erase voltage generating circuit is configured to set, in a data erase mode where the erase voltage is applied to a selected region of the memory cell array in a plurality of erase cycles, a rise waveform of the erase voltage in an initial stage of the plurality of erase cycles to be less steep than a rise waveform of the erase voltage in subsequent cycles. | 07-28-2011 |
20120044766 | SEMICONDUCTOR MEMORY DEVICE WITH A STACKED GATE INCLUDING A CHARGE STORAGE LAYER AND A CONTROL GATE AND METHOD OF CONTROLLING THE SAME - A semiconductor memory device includes a transfer circuit and a control circuit. The transfer circuit which includes a p-type MOS transistor with a source to which is applied a first voltage and an n-type MOS transistor to whose gate the drain of the p-type MOS transistor is connected and the first voltage is transferred, to whose source a second voltage is applied, and whose drain is connected to a load. The control circuit which turns the p-type MOS transistor on and off and which turns the p-type MOS transistor on to make the p-type MOS transistor transfer the second voltage to the load and, during the transfer, turns the p-type MOS transistor off to make the gate of the n-type MOS transistor float at the first voltage. | 02-23-2012 |
Patent application number | Description | Published |
20100098997 | POLYMER ELECTROLYTE MEMBRANE AND PROCESS FOR PREPARATION THEREOF, AND MEMBRANE-ELECTRODE ASSEMBLY AND POLYMER ELECTROLYTE FUEL CELL - A polymer electrolyte membrane comprising as a main ingredient a block copolymer (P) which comprises, as its constituents, a vinyl alcoholic polymer block (A) and a polymer block (B) having ion-conducting groups, which block copolymer | 04-22-2010 |
20100159353 | POLYMER ELECTROLYTE, POLYMER ELECTROLYTE MEMBRANE, MEMBRANE-ELECTRODE ASSEMBLY AND POLYMER ELECTROLYTE FUEL CELL - Disclosed are: a polymer electrolyte which comprises, as the main component, a block/graft copolymer comprising, as constituent components, polymer blocks (A), (B) and (C) which cause phase-separation from one another, wherein the polymer block (A) comprises a vinyl compound unit as the main repeating unit and has an ion-conductive group, the polymer block (B) comprises a vinyl compound unit capable of forming a flexible phase as the main repeating unit and forms a flexible phase, and the polymer block (C) comprises a styrene derivative unit carrying an alicyclic hydrocarbon group having a polycyclic structure as the main repeating unit and forms a restrained phase; a membrane; a membrane-electrode assembly; and a solid polymer fuel cell. The polymer electrolyte has excellent durability and heat resistance, and shows little change in properties, such as the change in dimension between a dried state and a wet state, the change in mechanical properties and the change in methanol cross-over before and after the immersion in a methanol solution. The polymer electrolyte can be used stably in a solid polymer fuel cell during the long-term operation of the solid polymer fuel cell and enables excellent start-up performance of the solid polymer fuel cell. | 06-24-2010 |
20100167159 | POLYELECTROLYTE FILM, FILM-ELECTRODE ASSEMBLY, AND SOLID-POLYMER-TYPE FUEL CELL - A polymer electrolyte membrane comprising as a main ingredient a block copolymer which comprises, as its constituents, a polymer block (A) having as a main unit an aromatic vinyl compound unit and a polymer block (B) forming a flexible phase, and has ion-conducting groups on the polymer block (A), said aromatic vinyl compound unit being such that the hydrogen atom bonded to the α-carbon atom is non-replaced or replaced with an alkyl group or an aryl group optionally having substituent(s), and at least one of hydrogen atoms directly bonded to the aromatic ring is replaced with an alkyl group; and a membrane electrode assembly and a polymer electrolyte fuel cell both of which uses it. The polymer block (A) can have a restraining phase, and/or can be cross-linked. The electrolyte membrane is mild to the environment, has a high ion conductivity and good bonding properties to electrodes, is excellent in moldability, and is not easily influenced by methanol; and displays excellent performance in polymer electrolyte fuel cells, particularly direct methanol fuel cells. | 07-01-2010 |
20100233569 | ELECTROLYTE MULTILAYER MEMBRANE FOR SOLID POLYMER FUEL CELL, MEMBRANE-ELECTRODE ASSEMBLY, AND FUEL CELL - A multilayer electrolyte membrane for polymer electrolyte fuel cells, consisting of a laminate of at least two polymer electrolyte membranes at least one of which membranes comprises a block copolymer (I) which comprises, as its constituents, a polymer block (A) having as a main unit an aromatic vinyl compound unit and a flexible polymer block (B), and has ion-conducting groups on polymer block (A); and a membrane electrode assembly and a polymer electrolyte fuel cell. The multilayer membrane is economical, mild to the environment, and has high ion conductivity and high methanol barrier properties, together. It is preferred, from the object, that at least two of the constitutive electrolyte membranes comprise block copolymer (I), and/or at least one of the constitutive electrolyte membranes has an ion exchange capacity of 0.7 meq/g or more and at least one of them has an ion exchange capacity of less than 0.7 meq/g. | 09-16-2010 |
20110300469 | ELECTROLYTE MEMBRANE AND MEMBRANE-ELECTRODE ASSEMBLY - An electrolyte membrane having a structure wherein fine rubber particles having substantially no ion-conducting group and having an average particle size of 20 nm to 1 μm are uniformly dispersed in a matrix including a resin component having ion-conducting group. The electrolyte membrane has high bonding ability to electrodes and does not cause cracks and ruptures because it is kept flexible even under low humid or absolutely dried condition, in addition, shows high ion conductivity even under low humid or absolutely dried condition because the matrix having ion-conducting groups are continuous. | 12-08-2011 |